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11. 发明申请

WO2017180393A2 HIGH DENSITY PIXELATED LED AND DEVICES AND METHODS THEREOF 审中-公开
标题翻译：高密度像素化LED及其装置和方法
公开(公告)号：WO2017180393A2
公开(公告)日：2017-10-19
申请号：PCT/US2017/026163
申请日：2017-04-05
申请人： CREE, INC.
发明人： EDMOND, John , DONOFRIO, Matthew , REIHERZER, Jesse , ANDREWS, Peter, Scott , CLARK, Joseph, G. , HABERERN, Kevin
IPC分类号： H01L27/15 , H01L33/46 , H01L33/50 , H01L33/60
摘要： At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and optionally by filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.
摘要翻译：至少一个LED阵列（例如，以倒装芯片配置）由具有用至少一种荧光材料覆盖的光提取表面的衬底支撑。与LED之间的间隙配准的光分离元件被配置为减少不同LED和/或发光材料区域的发射之间的相互作用，以减少散射和/或光学串扰，由此保持所得发射的象素样分辨率。可以通过机械锯切或蚀刻来形成光分离元件，以在衬底中限定凹槽或凹槽，并且可选地通过用光反射或光吸收材料填充凹槽或凹槽。衬底外部的光分离元件可以通过光刻图案化和牺牲材料的蚀刻和/或通过3D打印来限定。

12. 发明申请

WO2003010798A2 BONDING OF LIGHT EMITTING DIODES HAVING SHAPED SUBSTRATES AND COLLETS FOR BONDING OF LIGHT EMITTING DIODES HAVING SHAPED SUBSTRATES 审中-公开
标题翻译：具有成形基板的发光二极管和用于粘合具有成形基板的发光二极管的收集器的结合
公开(公告)号：WO2003010798A2
公开(公告)日：2003-02-06
申请号：PCT/US2002/023067
申请日：2002-07-22
申请人： CREE, INC. , CREE LIGHTING COMPANY
发明人： SLATER, David , BHARATHAN, Jayesh , EDMOND, John , RAFFETTO, Mark , MOHAMMED, Anwar , NEGLEY, Gerry , ANDREWS, Peter
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L24/32 , H01L33/20 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/12032 , H01L2924/12041 , H01L2924/00012 , H01L2924/00
摘要： Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.
摘要翻译：提供了具有不规则结构的倒装芯片安装的发光器件的接合。具有成形衬底的发光二极管通过以使得衬底内的剪切力不超过衬底的失效阈值的方式向衬底施加力来接合到子衬底。通过向与发光二极管的运动方向倾斜的发光二极管的衬底的表面施加力以将发光二极管热粘合到基座上，可以提供将发光二极管结合到基座上。还提供用于将成形衬底粘合到基座的夹具和用于将成形衬底粘合到基座的系统。

13. 发明申请

WO2006091242A1 SUBSTRATE REMOVAL PROCESS FOR HIGH LIGHT EXTRACTION LEDs 审中-公开
标题翻译：用于高亮度提取LED的基板去除工艺
公开(公告)号：WO2006091242A1
公开(公告)日：2006-08-31
申请号：PCT/US2005/036551
申请日：2005-09-15
申请人： CREE, INC.
发明人： EDMOND, John
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/0079
摘要： A method for fabricating light emitting diode (LEDs) comprises providing a plurality of LEDs on a substrate wafer, each of which has an n-type and p-type layer of Group-III nitride material formed on a SiC substrate with the n-type layer sandwiched between the substrate and p-type layer. A conductive carrier is provided having a lateral surface to hold the LEDs . The LEDs are flip-chip mounted on the lateral surface of the conductive carrier. The SiC substrate is removed from the LEDs such that the n-type layer is the top-most layer. A respective contact is deposited on the n-type layer of each of the LEDs and the carrier is separated into portions such that each of the LEDs is separated from the others, with each of the LEDs mounted to a respective portion of said carrier.
摘要翻译：一种制造发光二极管（LED）的方法包括：在基板晶片上设置多个LED，每个LED具有在具有n型的SiC衬底上形成的III族氮化物材料的n型和p型层层夹在基板和p型层之间。提供具有侧表面以保持LED的导电载体。 LED被倒装安装在导电载体的侧表面上。从LED中去除SiC衬底，使得n型层是最顶层的。相应的触点沉积在每个LED的n型层上，并且载体被分离成使得每个LED与其它LED分离的部分，其中每个LED安装到所述载体的相应部分。

14. 发明申请

WO2020236246A1 METHODS FOR PROCESSING SILICON CARBIDE WAFERS WITH RELAXED POSITIVE BOW 审中-公开
公开(公告)号：WO2020236246A1
公开(公告)日：2020-11-26
申请号：PCT/US2020/022626
申请日：2020-03-13
申请人： CREE, INC.
发明人： BUBEL, Simon , DONOFRIO, Matthew , EDMOND, John , CURRIER, Ian
IPC分类号： B28D5/00 , B28D5/04 , B23K26/38 , B23K26/53
摘要： Silicon carbide (SiC) wafers (8A) and related methods are disclosed that include intentional or imposed wafer (8A) shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers (8A) due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer (8A) shapes may comprise SiC wafers (8A) with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers (8A), and in particular for large area SiC wafers (8A), may be reduced. Related methods for providing SiC wafers (8A) with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material (70, 90, 92A, 92). Such methods may include laser-assisted separation of SiC (6H) wafers (8A) from bulk crystalline material (70, 90, 92A, 92).

15. 发明申请

WO2020136624A3 LASER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL 审中-公开
公开(公告)号：WO2020136624A3
公开(公告)日：2020-07-02
申请号：PCT/IB2019/061412
申请日：2019-12-27
申请人： CREE, INC.
发明人： DONOFRIO, Matthew , EDMOND, John , GOLAKIA, Harshad , MAYER, Eric
IPC分类号： B23K26/53 , H01L21/02 , B23K101/40 , B23K103/00 , B23K26/03
摘要： A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.

16. 发明申请

WO2020136622A3 LASER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL 审中-公开
公开(公告)号：WO2020136622A3
公开(公告)日：2020-07-02
申请号：PCT/IB2019/061410
申请日：2019-12-27
申请人： CREE, INC.
发明人： DONOFRIO, Matthew , EDMOND, John , GOLAKIA, Harshad
IPC分类号： B23K26/53 , B23K26/06 , H01L21/02 , B23K103/00 , B23K101/40
摘要： A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include multiple subsurface laser damage patterns with groups of parallel lines that are non-parallel to one another, but each line is within ±5 degrees of perpendicular to the direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within of a substrate, with the laser damage patterns being registered and having vertical extents that are overlapping.

17. 发明申请

WO2020136621A1 CARRIER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL ALONG LASER DAMAGE REGION 审中-公开
公开(公告)号：WO2020136621A1
公开(公告)日：2020-07-02
申请号：PCT/IB2019/061409
申请日：2019-12-27
申请人： CREE, INC.
发明人： DONOFRIO, Matthew , EDMOND, John , KONG, Hua-Shuang , BALKAS, Elif
IPC分类号： H01L21/02 , H01L21/304 , H01L21/78 , C30B33/00 , H01L21/762
摘要： A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 µm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25°C may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

18. 发明申请

WO2020136622A2 LASER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL 审中-公开
公开(公告)号：WO2020136622A2
公开(公告)日：2020-07-02
申请号：PCT/IB2019/061410
申请日：2019-12-27
申请人： CREE, INC.
发明人： DONOFRIO, Matthew , EDMOND, John , GOLAKIA, Harshad
IPC分类号： B23K26/53 , B23K26/06 , H01L21/02
摘要： A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include multiple subsurface laser damage patterns with groups of parallel lines that are non-parallel to one another, but each line is within ±5 degrees of perpendicular to the direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within of a substrate, with the laser damage patterns being registered and having vertical extents that are overlapping.

19. 发明申请

WO2017180393A3 HIGH DENSITY PIXELATED MULTI-LED CHIP, DEVICES INCORPORATING IT, AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：高密度像素化多发光二极管芯片，包含它的器件以及用于制造该器件的方法
公开(公告)号：WO2017180393A3
公开(公告)日：2017-10-19
申请号：PCT/US2017/026163
申请日：2017-04-05
申请人： CREE, INC.
发明人： EDMOND, John , DONOFRIO, Matthew , REIHERZER, Jesse , ANDREWS, Peter, Scott , CLARK, Joseph, G. , HABERERN, Kevin
IPC分类号： H01L27/15 , H01L33/46 , H01L33/50 , H01L33/60 , H01L33/00 , H01L33/38 , H01L33/44 , H01L33/58 , H01L33/62
摘要： At least one array of light emitting diodes (LEDs, 10; e.g., in a flip chip configuration) is supported by a substrate (15) having a light extraction surface (11) overlaid with at least one lumiphoric material (85). Light segregation elements (74) registered with gaps (70) between LEDs (10) are configured to reduce interaction between light emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements (74) may be formed by mechanical sawing or etching to define grooves or recesses (72) in the substrate (15), and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to the substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.
摘要翻译：至少一个发光二极管阵列（LED，10;例如以倒装芯片构造）由具有光提取表面（11）的基板（15）支撑，所述光提取表面（11）覆盖有至少一个荧光材料（85）。与LED（10）之间的间隙（70）配准的光分离元件（74）被配置为减少不同LED和/或发光材料区域的光发射之间的相互作用，以减少散射和/或光学串扰，从而保持像素类似由此产生的排放。可以通过机械锯切或蚀刻来形成光分离元件（74），以限定衬底（15）中的凹槽或凹槽（72），并用光反射或光吸收材料填充凹槽或凹槽。基板外部的光分离元件可以通过光刻图案化和牺牲材料的蚀刻和/或通过3D打印来限定。

20. 发明申请

WO2005117152A1 METHOD FOR FABRICATING GROUP III NITRIDE DEVICES AND DEVICES FABRICATED USING METHOD 审中-公开
标题翻译：用于制备III族氮化物装置的方法和使用方法织造的装置
公开(公告)号：WO2005117152A1
公开(公告)日：2005-12-08
申请号：PCT/US2005/016987
申请日：2005-05-17
申请人： CREE, INC.
发明人： NAKAMURA, Shuji , DENBAARS, Steven , EDMOND, John , MISHRA, Umesh , SWOBODA, Charles
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： A method according to the present invention for fabricating high light extraction photonic device comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.
摘要翻译：根据本发明的用于制造高光提取光子器件的方法，包括在衬底上生长外延半导体结构并在外延半导体结构上沉积第一镜层，使得外延半导体结构夹在第一镜层和衬底之间。倒装芯片安装外延半导体结构，其第一反射镜和衬底位于基座上，使得外延半导体器件结构夹在基座和衬底之间。然后通过向衬底引入蚀刻环境，从衬底去除衬底。第二镜层沉积在外延半导体结构上，使得外延半导体结构夹在第一和第二镜层之间。根据本发明的装置包括安装到底座的谐振腔发光二极管（RCLED）。

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