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11. 发明授权

US07888235B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US07888235B2
公开(公告)日：2011-02-15
申请号：US11831484
申请日：2007-07-31
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/185 , H01L21/7605 , H01L29/1608 , Y10S438/967
摘要： A method for fabricating a semiconductor substrate. In an embodiment, this method includes the steps of transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on a support substrate.
摘要翻译：一种制造半导体衬底的方法。在一个实施例中，该方法包括将种子层转移到支撑衬底上的步骤; 以及在种子层上沉积工作层以形成复合衬底。种子层由容纳支撑基板和工作层的热膨胀的材料制成。结果是在支撑衬底上包括至少一层半导体材料的半导体衬底。

12. 发明申请

US20090289332A1 METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM 有权
标题翻译：用于制造基板的方法和形成的基板
公开(公告)号：US20090289332A1
公开(公告)日：2009-11-26
申请号：US12536082
申请日：2009-08-05
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L29/02
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

13. 发明授权

US07544586B2 Method of fabricating chips and an associated support 有权
标题翻译：制造芯片和相关支持的方法
公开(公告)号：US07544586B2
公开(公告)日：2009-06-09
申请号：US11136252
申请日：2005-05-23
申请人： Bruno Ghyselen , Olivier Rayssac
发明人： Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a plurality of chips, with each chip including at least one circuit. This method includes the successive steps of creating chips on a layer of semiconductor material that is integral with a substrate; forming a weakening pattern corresponding to a predetermined cutting pattern on a support; transferring the chip-containing layer from the substrate to the support; and forming individual chips by cutting the chip-containing layer in accordance with the predetermined cutting pattern. Also, an assembly for fabricating a plurality of chips, each chip including at least one circuit provided on a layer of semiconductor material that is carried by a support that includes a weakening pattern corresponding to a predetermined cutting pattern for forming individual chips, with the support being obtained by assembling a plurality of individual tiles with boundaries between the individual tiles corresponding to the weakening pattern. The tiles may be assembled by disposing a binder between the individual tiles, with the binder ensuring temporary bonding of the tiles.
摘要翻译：一种制造多个芯片的方法，每个芯片包括至少一个电路。该方法包括在与衬底成一体的半导体材料层上产生芯片的连续步骤; 在支撑件上形成对应于预定切割图案的削弱图案; 将含芯片的层从基底转移到载体上; 以及通过根据预定的切割图案切割含芯片层而形成单独的芯片。另外，用于制造多个芯片的组件，每个芯片包括至少一个电路，该至少一个电路设置在由支撑体承载的半导体材料层上，所述支撑件包括对应于用于形成单独芯片的预定切割图案的弱化图案，支撑件通过组合具有对应于弱化图案的各个瓦片之间的边界的多个单独的瓦片来获得。可以通过在各个瓦片之间设置粘合剂来组装瓦片，粘合剂确保瓦片的临时粘合。

14. 发明申请

US20070269960A1 FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
标题翻译：具有有用的单晶半导体材料层的基板的制造
公开(公告)号：US20070269960A1
公开(公告)日：2007-11-22
申请号：US11831484
申请日：2007-07-31
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/185 , H01L21/7605 , H01L29/1608 , Y10S438/967
摘要： A method for fabricating a semiconductor substrate. In an embodiment, this method includes the steps of transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on a support substrate.
摘要翻译：一种制造半导体衬底的方法。在一个实施例中，该方法包括将种子层转移到支撑衬底上的步骤; 以及在种子层上沉积工作层以形成复合衬底。种子层由容纳支撑基板和工作层的热膨胀的材料制成。结果是在支撑衬底上包括至少一层半导体材料的半导体衬底。

15. 发明申请

US20060076649A1 Substrate for stressed systems and method of making same 失效
公开(公告)号：US20060076649A1
公开(公告)日：2006-04-13
申请号：US11287371
申请日：2005-11-28
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L29/06 , H01L23/544 , H01L23/58
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

16. 发明申请

US20050023610A1 Semiconductor-on-insulator structure having high-temperature elastic constraints 审中-公开
标题翻译：具有高温弹性约束的绝缘体上半导体结构
公开(公告)号：US20050023610A1
公开(公告)日：2005-02-03
申请号：US10700896
申请日：2003-11-03
申请人： Bruno Ghyselen , Cecile Aulnette , Olivier Rayssac
发明人： Bruno Ghyselen , Cecile Aulnette , Olivier Rayssac
IPC分类号： H01L21/762 , H01L27/01
CPC分类号： H01L21/76251
摘要： A semiconductor-on-insulator structure for electronics, optics or optoelectronics, in which a semiconductor layer includes desirable elastic constraints. The structure includes a substrate, an insulating layer on the substrate, and a semiconductor layer on the insulating layer. The semiconductor layer has elastic constraints, and the insulating layer is made of an electrically insulating material having a viscosity temperature TG that is sufficiently high so as to protect the semiconductor layer from loss of the elastic constraints when the structure is exposed to a temperature of about 950° C. or more. Also described is a process for producing such a semiconductor-on-insulator structure.
摘要翻译：用于电子，光学或光电子学的绝缘体上半导体结构，其中半导体层包括期望的弹性约束。该结构包括衬底，衬底上的绝缘层和绝缘层上的半导体层。半导体层具有弹性约束，并且绝缘层由具有足够高的粘度温度TG的电绝缘材料制成，以便当该结构暴露于大约的温度时保护半导体层免于弹性约束的损失 950℃以上。还描述了一种用于制造这种绝缘体上半导体结构的方法。

17. 发明授权

US08252664B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US08252664B2
公开(公告)日：2012-08-28
申请号：US13246316
申请日：2011-09-27
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac, legal representative , Gisèle Rayssac, legal representative
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。

18. 发明授权

US07405135B2 Substrate for stressed systems and method of making same 失效
标题翻译：强化系统基板及其制作方法
公开(公告)号：US07405135B2
公开(公告)日：2008-07-29
申请号：US11434930
申请日：2006-05-17
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L29/00
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.
摘要翻译：一种应力吸收微结构组件，包括具有在表面上雕刻或蚀刻的多个图案的容纳层的支撑衬底，缓冲层和成核层。应力吸收微结构组件还可以包括缓冲层和成核层之间的绝缘层。该组件可以在其上接收厚的外延层，同时引起这种层的破裂。

19. 发明申请

US20070287273A1 METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM 有权
标题翻译：用于制造基板的方法和形成的基板
公开(公告)号：US20070287273A1
公开(公告)日：2007-12-13
申请号：US11840696
申请日：2007-08-17
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/20
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

20. 发明授权

US07279779B2 Substrate assembly for stressed systems 有权
标题翻译：用于应力系统的基板组件
公开(公告)号：US07279779B2
公开(公告)日：2007-10-09
申请号：US11411833
申请日：2006-04-27
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L23/13
CPC分类号： H01L21/2007 , H01L21/76251 , H01L21/76254
摘要： A substrate-assembly having a mechanical stress absorption system. The assembly includes two substrates, one of which has a mechanical stress absorbing system, such as a plurality of motifs that absorb thermoelastic stresses, to prevent cracking or destruction of the substrates or separation of one substrate from the other.
摘要翻译：具有机械应力吸收系统的基板组件。该组件包括两个基板，其中一个具有机械应力吸收系统，例如吸收热弹性应力的多个图案，以防止基板的破裂或破坏或将一个基板与另一个基板分开。

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