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11. 发明申请

US20110204492A1 Microelectronic structure including a low K dielectric and a method of controlling carbon distribution in the structure 有权
标题翻译：包括低K电介质的微电子结构和控制结构中碳分布的方法
公开(公告)号：US20110204492A1
公开(公告)日：2011-08-25
申请号：US12660294
申请日：2010-02-23
申请人： Bo Xie , Alexandros T. Demos , Daemian Raj , Sure Ngo , Kang Sub Yim
发明人： Bo Xie , Alexandros T. Demos , Daemian Raj , Sure Ngo , Kang Sub Yim
IPC分类号： H01L23/00 , H01L21/316
CPC分类号： H01L21/02274 , C23C16/30 , C23C16/45523 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/7682 , H01L21/76832 , H01L21/76835
摘要： Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.
摘要翻译：本发明的实施例涉及微电子结构的形成。对于32nm的下一个技术节点，低k电介质材料需要表现出小于约2.6的介电常数。本发明能够形成利用这种低k电介质材料的半导体器件，同时提供整体上微电子结构的改进的弯曲和剪切强度的完整性。

12. 发明申请

US20070207275A1 Enhancement of remote plasma source clean for dielectric films 审中-公开
标题翻译：电介质薄膜远程等离子体源清洁的增强
公开(公告)号：US20070207275A1
公开(公告)日：2007-09-06
申请号：US11508544
申请日：2006-08-23
申请人： Thomas Nowak , Kang Sub Yim , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Vu Ngoc Tran Nguyen , Dennis Singleton , Martin Jay Seamons , Karthik Janakiraman , Ganesh Balasubramanian , Mohamed Ayoub , Wendy H. Yeh , Alexandros T. Demos , Hichem M'Saad
发明人： Thomas Nowak , Kang Sub Yim , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Vu Ngoc Tran Nguyen , Dennis Singleton , Martin Jay Seamons , Karthik Janakiraman , Ganesh Balasubramanian , Mohamed Ayoub , Wendy H. Yeh , Alexandros T. Demos , Hichem M'Saad
IPC分类号： H05H1/24
CPC分类号： C23C16/4405 , B08B7/0035 , H01J37/32357 , H01J37/32862
摘要： Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.
摘要翻译：提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。反应性物质由含氧气体（例如O 2）和/或含卤素气体如NF 3 N产生。在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。

13. 发明申请

US20110100394A1 SUPERIMPOSITION OF RAPID PERIODIC AND EXTENSIVE POST MULTIPLE SUBSTRATE UV-OZONE CLEAN SEQUENCES FOR HIGH THROUGHPUT AND STABLE SUBSTRATE TO SUBSTRATE PERFORMANCE 有权
标题翻译：快速周期性和扩展后多层底物紫外线臭氧清除序列用于高通量和稳定的基底以达到基础性能
公开(公告)号：US20110100394A1
公开(公告)日：2011-05-05
申请号：US12987948
申请日：2011-01-10
申请人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
发明人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
IPC分类号： B08B7/00
CPC分类号： H01L21/67028 , B08B7/0057 , H01L21/67115 , H01L21/6719
摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
摘要翻译：一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于紫外线不到一分钟。可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

14. 发明申请

US20100018548A1 SUPERIMPOSITION OF RAPID PERIODIC AND EXTENSIVE POST MULTIPLE SUBSTRATE UV-OZONE CLEAN SEQUENCES FOR HIGH THROUGHPUT AND STABLE SUBSTRATE TO SUBSTRATE PERFORMANCE 审中-公开
标题翻译：快速周期性和扩展后多层底物紫外线臭氧清除序列用于高通量和稳定的基底以达到基础性能
公开(公告)号：US20100018548A1
公开(公告)日：2010-01-28
申请号：US12178523
申请日：2008-07-23
申请人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
发明人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
IPC分类号： B08B7/00
CPC分类号： H01L21/67028 , B08B7/0057 , H01L21/67115 , H01L21/6719
摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
摘要翻译：一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，并将该室暴露于紫外线不到一分钟。可以重复基底批处理子步骤，直到处理批次中的最后一个基底。在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

15. 发明授权

US08702870B2 Superimposition of rapid periodic and extensive post multiple substrate UV-ozone clean sequences for high throughput and stable substrate to substrate performance 有权
标题翻译：快速周期性和广泛的多底物UV-臭氧清洁序列的叠加，用于高通量和稳定的基板与基板性能
公开(公告)号：US08702870B2
公开(公告)日：2014-04-22
申请号：US12987948
申请日：2011-01-10
申请人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
发明人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
IPC分类号： B08B9/093
CPC分类号： H01L21/67028 , B08B7/0057 , H01L21/67115 , H01L21/6719
摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
摘要翻译：一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于紫外线不到一分钟。可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

16. 发明申请

US20090017231A1 NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 有权
标题翻译：通过等离子体增强化学蒸气沉积法制造具有高机械性能的超低K膜的新型硅前驱体
公开(公告)号：US20090017231A1
公开(公告)日：2009-01-15
申请号：US12183915
申请日：2008-07-31
申请人： Kang Sub Yim , Alexandros T. Demos
发明人： Kang Sub Yim , Alexandros T. Demos
IPC分类号： H05H1/24
CPC分类号： C23C16/401 , C23C16/56
摘要： A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.
摘要翻译：提供了一种在基片上沉积低介电常数膜的方法。低介电常数膜通过包括使一种或多种有机硅化合物和致孔剂反应的方法沉积，然后对膜进行后处理以在膜中产生孔。一种或多种有机硅化合物包括具有通式结构Si-CX-Si或-Si-O-（CH2）n-O-Si-的化合物。本文提供的低介电常数膜包括在膜的后处理之前和之后包括Si-CX-Si键的膜。低介电常数膜具有良好的机械和粘附性能以及期望的介电常数。

17. 发明授权

US07989033B2 Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition 有权
标题翻译：通过等离子体增强化学气相沉积制备具有高机械性能的超低K膜的硅前体
公开(公告)号：US07989033B2
公开(公告)日：2011-08-02
申请号：US12183915
申请日：2008-07-31
申请人： Kang Sub Yim , Alexandros T. Demos
发明人： Kang Sub Yim , Alexandros T. Demos
IPC分类号： C23C16/00 , B05D3/00 , B29C71/02 , B29C71/04 , C04B41/00 , C08J7/18
CPC分类号： C23C16/401 , C23C16/56
摘要： A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.
摘要翻译：提供了一种在基片上沉积低介电常数膜的方法。低介电常数膜通过包括使一种或多种有机硅化合物和致孔剂反应的方法沉积，然后对膜进行后处理以在膜中产生孔。一种或多种有机硅化合物包括具有通式结构Si-CX-Si或-Si-O-（CH2）n-O-Si-的化合物。本文提供的低介电常数膜包括在膜的后处理之前和之后包括Si-CX-Si键的膜。低介电常数膜具有良好的机械和粘附性能以及期望的介电常数。

18. 发明授权

US07879683B2 Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay 有权
标题翻译：在电介质层中产生气隙以减少RC延迟的方法和装置
公开(公告)号：US07879683B2
公开(公告)日：2011-02-01
申请号：US11869396
申请日：2007-10-09
申请人： Amir Al-Bayati , Alexandros T. Demos , Kang Sub Yim , Mehul Naik , Zhenjiang “David” Cui , Mihaela Balseanu , Meiyee (Maggie Le) Shek , Li-Qun Xia
发明人： Amir Al-Bayati , Alexandros T. Demos , Kang Sub Yim , Mehul Naik , Zhenjiang “David” Cui , Mihaela Balseanu , Meiyee (Maggie Le) Shek , Li-Qun Xia
IPC分类号： H01L21/76
CPC分类号： H01L21/7682 , H01L21/3105 , H01L21/31111 , H01L21/31144 , H01L21/76825 , H01L21/76834 , H01L21/76849 , H01L21/76885
摘要： A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first dielectric layer, filling the trenches with a conductive material, planarizing the conductive material to expose the first dielectric layer, depositing a dielectric barrier film on the conductive material and exposed first dielectric layer, depositing a hard mask layer over the dielectric barrier film, forming a pattern in the dielectric barrier film and the hard mask layer to expose selected regions of the substrate, oxidizing at least a portion of the first dielectric layer in the selected region of the substrate, removing oxidized portion of the first dielectric layer to form reversed trenches around the conductive material, and forming air gaps in the reversed trenches while depositing a second dielectric material in the reversed trenches.
摘要翻译：一种用于在互连结构的电介质材料中产生气隙的方法和装置。一个实施例提供了一种用于形成半导体结构的方法，包括在衬底上沉积第一介电层，在第一介电层中形成沟槽，用导电材料填充沟槽，平坦化导电材料以暴露第一介电层，在导电材料和暴露的第一电介质层上的阻挡膜，在介电阻挡膜上沉积硬掩模层，在介电阻挡膜和硬掩模层中形成图案，以暴露衬底的选定区域，氧化至少一部分在衬底的选定区域中的第一介电层，去除第一电介质层的氧化部分以在导电材料周围形成反向沟槽，以及在反向沟槽中形成气隙，同时在反向沟槽中沉积第二电介质材料。

19. 发明授权

US07611996B2 Multi-stage curing of low K nano-porous films 有权
标题翻译：低K纳米多孔膜的多阶段固化
公开(公告)号：US07611996B2
公开(公告)日：2009-11-03
申请号：US11085416
申请日：2005-03-21
申请人： Francimar Schmitt , Yi Zheng , Kang Sub Yim , Sang H. Ahn , Lester A. D'Cruz , Dustin W. Ho , Alexandros T. Demos , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
发明人： Francimar Schmitt , Yi Zheng , Kang Sub Yim , Sang H. Ahn , Lester A. D'Cruz , Dustin W. Ho , Alexandros T. Demos , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在形式的电子束。

20. 发明申请

US20110206857A1 ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：超级低介电材料使用含有有机功能组合物的混合前驱体通过等离子体增强化学气相沉积
公开(公告)号：US20110206857A1
公开(公告)日：2011-08-25
申请号：US13028823
申请日：2011-02-16
申请人： Kang Sub Yim , Alexandros T. Demos
发明人： Kang Sub Yim , Alexandros T. Demos
IPC分类号： C08F2/48 , C08F2/46
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/7681
摘要： Methods for depositing a low dielectric constant layer on a substrate are provided. In one embodiment, the method includes introducing one or more organosilicon compounds into a chamber, wherein the one or more organosilicon compounds comprise a silicon atom and a porogen component bonded to the silicon atom, reacting the one or more organosilicon compounds in the presence of RF power to deposit a low dielectric constant layer on a substrate in the chamber, and post-treating the low dielectric constant layer to substantially remove the porogen component from the low dielectric constant layer. Optionally, an inert carrier gas, an oxidizing gas, or both may be introduced into the processing chamber with the one or more organosilicon compounds. The post-treatment process may be an ultraviolet radiation cure of the deposited material. The UV cure process may be used concurrently or serially with a thermal or e-beam curing process. The low dielectric constant layers have good mechanical properties and a desirable dielectric constant.
摘要翻译：提供了在基片上沉积低介电常数层的方法。在一个实施方案中，所述方法包括将一种或多种有机硅化合物引入室中，其中所述一种或多种有机硅化合物包含与硅原子键合的硅原子和致孔剂组分，在RF存在下使所述一种或多种有机硅化合物反应在室中的基板上沉积低介电常数层的功能，并且对低介电常数层进行后处理，以从低介电常数层基本上除去致孔剂成分。任选地，可以使用一种或多种有机硅化合物将惰性载气，氧化气体或二者引入处理室。后处理过程可以是沉积材料的紫外线辐射固化。 UV固化工艺可以与热或电子束固化工艺同时使用或连续使用。低介电常数层具有良好的机械性能和所需的介电常数。

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