专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06634805B1 Parallel plate development 失效
标题翻译：平行板开发
公开(公告)号：US06634805B1
公开(公告)日：2003-10-21
申请号：US09974340
申请日：2001-10-10
申请人： Michael K. Templeton , Khoi A. Phan , Bharath Rangarajan , Bryan K. Choo , Ramkumar Subramanian
发明人： Michael K. Templeton , Khoi A. Phan , Bharath Rangarajan , Bryan K. Choo , Ramkumar Subramanian
IPC分类号： G03B500
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A system and method is provided for applying a developer to a photoresist material wafer disposed on a semiconductor substrate. The developer system and method employ a developer plate having a plurality of a apertures for dispensing developer. Preferably, the developer plate has a bottom surface with a shape that is similar to the wafer. The developer plate is disposed above the wafer and substantially and/or completely surrounds the top surface of the wafer during application of the developer. A small gap is formed between the wafer and the bottom surface of the developer plate. The wafer and the developer plate form a parallel plate pair, such that the gap can be made small enough so that the developer fluid quickly fills the gap. The developer plate is disposed in very close proximity with respect to the wafer, such that the developer is squeezed between the two plates thereby spreading evenly the developer over the wafer.
摘要翻译：提供了一种将显影剂施加到设置在半导体衬底上的光致抗蚀剂材料晶片的系统和方法。显影剂系统和方法采用具有多个用于分配显影剂的孔的显影剂板。优选地，显影剂板具有与晶片类似的形状的底表面。显影剂板设置在晶片上方并且在施加显影剂的过程中基本上和/或完全地包围晶片的顶表面。在晶片和显影剂板的底表面之间形成小的间隙。晶片和显影剂板形成平行板对，使得间隙可以制得足够小，使得显影剂流体快速填充间隙。显影剂板相对于晶片非常接近地设置，使得显影剂被挤压在两个板之间，从而将显影剂均匀地铺展在晶片上。

12. 发明授权

US06912438B2 Using scatterometry to obtain measurements of in circuit structures 失效
标题翻译：使用散射法获得电路结构的测量
公开(公告)号：US06912438B2
公开(公告)日：2005-06-28
申请号：US10277016
申请日：2002-10-21
申请人： Bryan K. Choo , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
发明人： Bryan K. Choo , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
IPC分类号： G01N21/47 , H01L21/66 , G06F19/00
CPC分类号： H01L22/20 , G01N21/4738 , H01L2924/0002 , H01L2924/00
摘要： A system and methodology are disclosed for monitoring and controlling a semiconductor fabrication process. Measurements are taken in accordance with scatterometry based techniques of repeating in circuit structures that evolve on a wafer as the wafer undergoes the fabrication process. The measurements can be employed to generate feed forward and/or feedback control data that can utilized to selectively adjust one or more fabrication components and/or operating parameters associated therewith to adapt the fabrication process. Additionally, the measurements can be employed in determining whether to discard the wafer or portions thereof based on a cost benefit analysis, for example. Directly measuring in circuit structures mitigates sacrificing valuable chip real estate as test grating structures may not need to be formed within the wafer, and also facilitates control over the elements that actually affect resulting chip performance.
摘要翻译：公开了用于监测和控制半导体制造工艺的系统和方法。根据基于散射法的技术进行测量，该技术在晶片经历制造过程时在晶片上发生的电路结构中重复。可以采用测量来产生可以用于选择性地调整一个或多个制造部件和/或与其相关联的操作参数以适应制造过程的前馈和/或反馈控制数据。另外，例如，可以基于成本效益分析来确定是否丢弃晶片或其部分的测量。在电路结构中的直接测量减轻了牺牲有价值的芯片的不动产，因为测试光栅结构可能不需要在晶片内形成，并且还有助于对实际影响芯片性能的元件的控制。

13. 发明授权

US06373053B1 Analysis of CD-SEM signal to detect scummed/closed contact holes and lines 有权
标题翻译：分析CD-SEM信号以检测浮渣/闭合接触孔和管线
公开(公告)号：US06373053B1
公开(公告)日：2002-04-16
申请号：US09495281
申请日：2000-01-31
申请人： Bryan K. Choo , Bhanwar Singh , Sanjay K. Yedur , Khoi A. Phan
发明人： Bryan K. Choo , Bhanwar Singh , Sanjay K. Yedur , Khoi A. Phan
IPC分类号： G01N2300
CPC分类号： G01N21/9501 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A system is provided for detecting scumming in a wafer. The system includes an analysis system for providing a signal corresponding to a surface portion of the wafer and a processing system operatively coupled to the analysis system. The processing system is configured to determine a shape of at least a portion of the signal and, the processing system detects scumming in the wafer based upon the shape of at least a portion of the signal.
摘要翻译：提供了一种用于检测晶片中的浮渣的系统。该系统包括用于提供对应于晶片的表面部分的信号的分析系统和可操作地耦合到分析系统的处理系统。处理系统被配置为确定信号的至少一部分的形状，并且处理系统基于信号的至少一部分的形状来检测晶片中的浮渣。

14. 发明授权

US06354133B1 Use of carbon nanotubes to calibrate conventional tips used in AFM 失效
标题翻译：使用碳纳米管校准AFM中使用的常规提示
公开(公告)号：US06354133B1
公开(公告)日：2002-03-12
申请号：US09729293
申请日：2000-12-04
申请人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo , Michael K. Templeton , Ramkumar Subramanian
发明人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo , Michael K. Templeton , Ramkumar Subramanian
IPC分类号： G01B528
CPC分类号： G01Q40/02 , G01Q40/00 , Y10S977/742 , Y10S977/842 , Y10S977/849 , Y10S977/85 , Y10S977/876 , Y10S977/901
摘要： The present invention provides systems, methods, and standards for calibrating nano-measuring devices. Calibration standards of the invention include carbon nanotubes and methods of the invention involve scanning carbon nanotubes using nano-scale measuring devices. The widths of the carbon nanotube calibration standards are known with a high degree of accuracy. The invention allows calibration of a wide variety of nano-scale measuring devices, taking into account many, and in some cases all, of the systematic errors that may affect a nano-scale measurement. The invention may be used to accurately calibrate line width, line height, and trench width measurements and may be used to precisely characterize both scanning probe microscope tips and electron microscope beams.
摘要翻译：本发明提供了用于校准纳米测量装置的系统，方法和标准。本发明的校准标准包括碳纳米管，本发明的方法涉及使用纳米级测量装置扫描碳纳米管。碳纳米管校准标准品的宽度以高精度已知。考虑到可能影响纳米尺度测量的许多系统误差以及在所有这些系统误差中，本发明允许校准各种各样的纳米尺度的测量装置。本发明可以用于精确校准线宽，线高度和沟槽宽度测量，并且可以用于精确地表征扫描探针显微镜尖端和电子显微镜束。

15. 发明授权

US06591658B1 Carbon nanotubes as linewidth standards for SEM & AFM 失效
标题翻译：碳纳米管作为SEM和AFM的线宽标准
公开(公告)号：US06591658B1
公开(公告)日：2003-07-15
申请号：US09729297
申请日：2000-12-04
申请人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo , Michael K. Templeton , Ramkumar Subramanian
发明人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo , Michael K. Templeton , Ramkumar Subramanian
IPC分类号： G01B1508
CPC分类号： G01Q40/02 , H01J2237/2816 , H01J2237/2826 , Y10S977/742 , Y10S977/86 , Y10S977/863 , Y10S977/869 , Y10S977/875 , Y10S977/881 , Y10T29/53004
摘要： The present invention provides systems, methods, and standards for calibrating nano-measuring devices. Calibration standards of the invention include carbon nanotubes and methods of the invention involve scanning carbon nanotubes using nano-scale measuring devices. The widths of the carbon nanotube calibration standards are known with a high degree of accuracy. The invention allows calibration of a wide variety of nano-scale measuring devices, taking into account many, and in some cases all, of the systematic errors that may affect a nano-scale measurement. The invention may be used to accurately calibrate line width, line height, and trench width measurements and may be used to precisely characterize both scanning probe microscope tips and electron microscope beams.
摘要翻译：本发明提供了用于校准纳米测量装置的系统，方法和标准。本发明的校准标准包括碳纳米管，本发明的方法涉及使用纳米级测量装置扫描碳纳米管。碳纳米管校准标准品的宽度以高精度已知。考虑到可能影响纳米尺度测量的许多系统误差以及在所有这些系统误差中，本发明允许校准各种各样的纳米尺度的测量装置。本发明可以用于精确校准线宽，线高度和沟槽宽度测量，并且可以用于精确地表征扫描探针显微镜尖端和电子显微镜束。

16. 发明授权

US06319643B1 Conductive photoresist pattern for long term calibration of scanning electron microscope 失效
标题翻译：导电光刻胶图案用于扫描电子显微镜的长期校准
公开(公告)号：US06319643B1
公开(公告)日：2001-11-20
申请号：US09596680
申请日：2000-06-19
申请人： Bhanwar Singh , Bryan K. Choo , Ramkumar Subramanian
发明人： Bhanwar Singh , Bryan K. Choo , Ramkumar Subramanian
IPC分类号： G03F900
CPC分类号： G03F7/093 , Y10S430/143
摘要： One aspect of the present invention relates to a method of calibrating a measurement instrument that uses an electron beam, involving the steps of providing a conductive photoresist on a semiconductor structure having a conductivity of at least about 0.1 S/cm; exposing and developing the conductive photoresist to provide a patterned conductive photoresist; using the semiconductor structure having the patterned conductive photoresist thereon as a standard for calibration; and calibrating the measurement instrument. Another aspect of the present invention relates to a method of reducing electrostatic charges on a standard developed photoresist to improve repeated calibrations of a measurement instrument that uses an electron beam, involving the steps of providing a conductive photoresist on a semiconductor structure; exposing the conductive photoresist with radiation having a wavelength of about 370 nm or less; developing the conductive photoresist to provide a patterned conductive photoresist, wherein the patterned conductive photoresist has a conductivity of at least about 0.01 S/cm; and calibrating the measurement instrument with the semiconductor structure having the patterned conductive photoresist thereon as a standard.
摘要翻译：本发明的一个方面涉及一种校准使用电子束的测量仪器的方法，包括以下步骤：在具有至少约0.1S / cm的导电率的半导体结构上提供导电光致抗蚀剂; 曝光和显影导电光致抗蚀剂以提供图案化的导电光致抗蚀剂; 使用其上具有图案化导电光刻胶的半导体结构作为校准的标准; 并校准测量仪器。本发明的另一方面涉及一种降低标准显影光致抗蚀剂上的静电电荷以改善使用电子束的测量仪器的重复校准的方法，包括在半导体结构上提供导电光致抗蚀剂的步骤; 用波长约370nm或更小的辐射曝光导电光致抗蚀剂; 显影所述导电光致抗蚀剂以提供图案化的导电光致抗蚀剂，其中所述图案化导电光致抗蚀剂具有至少约0.01S / cm的电导率; 并用其上具有图案化导电光致抗蚀剂的半导体结构作为标准校准测量仪器。

17. 发明授权

US06559446B1 System and method for measuring dimensions of a feature having a re-entrant profile 有权
标题翻译：用于测量具有入口轮廓的特征的尺寸的系统和方法
公开(公告)号：US06559446B1
公开(公告)日：2003-05-06
申请号：US09670775
申请日：2000-09-27
申请人： Bryan K. Choo , Bhanwar Singh
发明人： Bryan K. Choo , Bhanwar Singh
IPC分类号： G01N23225
CPC分类号： G01N23/225
摘要： A system and method are disclosed for measuring and/or imaging a feature having a re-entrant cross-sectional profile. Beams are emitted onto the feature and substrate at different angles during corresponding measurement intervals. An feature data set of the feature is characterized for each measurement interval. The data associated with each measurement interval are aggregated to provide a cross-sectional representation of the having dimensions proportional to the feature. As a result, a more accurate feature profile may be determined, including a cross-sectional dimension of the re-entrant feature at the juncture between the feature and substrate.
摘要翻译：公开了一种用于测量和/或成像具有重入横截面轮廓的特征的系统和方法。光束在相应的测量间隔内以不同的角度发射到特征和基底上。特征的特征数据集的特征在于每个测量间隔。与每个测量间隔相关联的数据被聚合以提供具有与特征成比例的尺寸的横截面表示。结果，可以确定更准确的特征轮廓，包括在特征和基底之间的交界处的入侵特征的横截面尺寸。

18. 发明授权

US06829380B1 Optimization of OPC design factors utilizing an advanced algorithm on a low voltage CD-SEM system 失效
标题翻译：在低电压CD-SEM系统上利用高级算法优化OPC设计因子
公开(公告)号：US06829380B1
公开(公告)日：2004-12-07
申请号：US09642959
申请日：2000-08-21
申请人： Bryan K. Choo , Bhanwar Singh , Sanjay K. Yedur
发明人： Bryan K. Choo , Bhanwar Singh , Sanjay K. Yedur
IPC分类号： G06K900
CPC分类号： G03F7/70616 , G03F7/70441 , G03F7/70625
摘要： A system for evaluating optical proximity corrected (OPC) designs is provided. The system includes an analysis system for performing measurements relating to a segment of a feature. The analysis system is configured to determine a first image for the segment of the feature based upon the measurements. The analysis system determines a second image to facilitate analysis of the first image and evaluates OPC designs based upon comparisons of the first and second image.
摘要翻译：提供了一种用于评估光学邻近校正（OPC）设计的系统。该系统包括用于执行与特征的段相关的测量的分析系统。分析系统被配置为基于测量来确定特征的段的第一图像。分析系统确定第二图像以便于分析第一图像，并且基于第一和第二图像的比较来评估OPC设计。

19. 发明授权

US06452161B1 Scanning probe microscope having optical fiber spaced from point of hp 失效
标题翻译：扫描探针显微镜，其具有与尖端点间隔开的光纤
公开(公告)号：US06452161B1
公开(公告)日：2002-09-17
申请号：US09536529
申请日：2000-03-28
申请人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo , Carmen L. Morales
发明人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo , Carmen L. Morales
IPC分类号： H01J314
CPC分类号： G01Q30/02 , G01Q70/02 , Y10S977/868
摘要： A measuring system and apparatus is provided in which a scanning probe microscope includes a high resolution optical sensor adapted to view a portion of a workpiece beneath the scanning probe tip. Also provided is a scanning tip assembly with a cantilever/tip assembly and an optical sensor associated with a cantilever assembly. The optical sensor may comprise a charge coupled device or other solid state camera and may be fabricated on the cantilever and/or the tip. In addition, a scanning tip assembly is provided for a scanning probe microscope having an optical fiber adapted to receive reflected light from the at least a portion of the workpiece. The scanning tip may be employed in an AFM or other scanning probe microscope, thereby providing simultaneous viewing and scanning of a workpiece surface. Also provided is a measuring apparatus comprising a scanning probe microscope having an optical fiber adapted to receive reflected light from a feature of a workpiece, and a camera connected to the optical fiber to provide a visual image based on the reflected light from the feature of the workpiece.
摘要翻译：提供了一种测量系统和装置，其中扫描探针显微镜包括适于在扫描探针尖端下方观察工件的一部分的高分辨率光学传感器。还提供了具有悬臂/尖端组件和与悬臂组件相关联的光学传感器的扫描末端组件。光学传感器可以包括电荷耦合器件或其他固态照相机，并且可以制造在悬臂和/或尖端上。此外，为扫描探针显微镜提供扫描头组件，其具有适于接收来自工件的至少一部分的反射光的光纤。扫描尖端可以用在AFM或其他扫描探针显微镜中，从而提供对工件表面的同时观察和扫描。还提供了一种包括扫描探针显微镜的测量装置，该扫描探针显微镜具有适于接收来自工件特征的反射光的光纤，以及连接到光纤的照相机，以基于来自该特征的反射光提供视觉图像工件。

20. 发明授权

US06566655B1 Multi-beam SEM for sidewall imaging 失效
标题翻译：用于侧壁成像的多光束扫描
公开(公告)号：US06566655B1
公开(公告)日：2003-05-20
申请号：US09729449
申请日：2000-12-04
申请人： Bryan K. Choo , Bhanwar Singh , Sanjay K. Yedur
发明人： Bryan K. Choo , Bhanwar Singh , Sanjay K. Yedur
IPC分类号： H01J3728
CPC分类号： H01J37/28 , G01N23/2251 , H01J2237/1514 , H01J2237/24578 , H01J2237/2611 , H01J2237/2814
摘要： The present invention provides a system and method that facilitates measuring and imaging topographical features of a substrate, including lines and trenches having reentrant profiles. One aspect of the invention provides an electron microscope that simultaneously scans a substrate with two or more electron beams that are directed against the substrate with substantially differing angles of incidence. Secondary electrons resulting from the interaction of the substrate with the beams are detected by one or more secondary electron detectors. Each secondary electron detector may simultaneously receive secondary electrons resulting from the interaction of the substrate with two or more electron beams. In another of its aspects, the invention provides methods of analysis that permit the interpretation of such data to analyze critical dimensions and form images of the substrate. Critical dimensions that may be determined include feature heights and reentrant profile shapes. The topographical information provided is more complete than that of conventional SEM imaging and is obtained more rapidly than would be possible using multiple scans of a single electron beam.
摘要翻译：本发明提供了一种便于测量和成像基底的形貌特征的系统和方法，包括具有折返轮廓的线和沟槽。本发明的一个方面提供了一种电子显微镜，其同时以基本上不同的入射角度针对衬底的两个或更多个电子束扫描衬底。由基板与光束的相互作用产生的二次电子被一个或多个二次电子检测器检测。每个二次电子检测器可以同时接收由衬底与两个或更多个电子束的相互作用产生的二次电子。在另一方面，本发明提供了分析方法，其允许解释这些数据以分析临界尺寸并形成基底的图像。可能确定的关键尺寸包括特征高度和可重入的轮廓形状。所提供的地形信息比常规SEM成像更完整，并且比使用单个电子束的多次扫描可能获得的地形信息更快。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式