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11. 发明授权

US09064816B2 Dry-etch for selective oxidation removal 有权
标题翻译：干蚀刻用于选择性氧化去除
公开(公告)号：US09064816B2
公开(公告)日：2015-06-23
申请号：US13839948
申请日：2013-03-15
申请人： Applied Materials, Inc.
发明人： Sang Hyuk Kim , Dongqing Yang , Young S. Lee , Weon Young Jung , Sang-jin Kim , Ching-Mei Hsu , Anchuan Wang , Nitin K. Ingle
IPC分类号： B44C1/22 , H01L21/311 , H01L21/02 , H01J37/32
CPC分类号： H01L21/3065 , C23C16/0245 , H01J37/32357 , H01J2237/334 , H01L21/02046 , H01L21/02068 , H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L21/32136 , H01L21/76814
摘要： Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.
摘要翻译：描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。在一些实施方案中，氧化钨选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。

12. 发明授权

US09023734B2 Radical-component oxide etch 有权
标题翻译：自由基氧化物蚀刻
公开(公告)号：US09023734B2
公开(公告)日：2015-05-05
申请号：US13834611
申请日：2013-03-15
申请人： Applied Materials, Inc.
发明人： Zhijun Chen , Jingchun Zhang , Ching-Mei Hsu , Seung Park , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/302 , H01L21/311 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32357
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.
摘要翻译：描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氮和氢的前体结合。因此，与典型的Siconi TM工艺相比，反应物在衬底处于高温下时蚀刻具有高氧化硅选择性的图案化异质结构。蚀刻进行而不会在基板表面上产生残留物。该方法可以用于去除硅或氧化硅，同时除去硅或多晶硅，氮化硅或氮化钛。

13. 发明授权

US08980763B2 Dry-etch for selective tungsten removal 有权
标题翻译：干蚀刻用于选择性钨去除
公开(公告)号：US08980763B2
公开(公告)日：2015-03-17
申请号：US13840206
申请日：2013-03-15
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Ching-Mei Hsu , Nitin K. Ingle , Zihui Li , Anchuan Wang
IPC分类号： H01L21/302 , H01L21/3213 , H01J37/32
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/02049 , H01L21/32136
摘要： Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.
摘要翻译：描述了相对于含硅膜（例如氧化硅，氮化碳和（多）硅）选择性地蚀刻钨的方法以及氧化钨。这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。等离子体流出物与暴露的表面反应并选择性地去除钨，同时非常缓慢地除去其它暴露的材料。包括顺序和同时的方法以除去例如由于暴露于大气中而产生的薄氧化钨。

14. 发明申请

US20140154889A1 DRY-ETCH FOR SELECTIVE TUNGSTEN REMOVAL 有权
标题翻译：干燥剂用于选择性去除钨粉
公开(公告)号：US20140154889A1
公开(公告)日：2014-06-05
申请号：US13840206
申请日：2013-03-15
申请人： APPLIED MATERIALS, INC.
发明人： Xikun Wang , Ching-Mei Hsu , Nitin K. Ingle , Zihui Li , Anchuan Wang
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/02049 , H01L21/32136
摘要： Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.
摘要翻译：描述了相对于含硅膜（例如氧化硅，氮化碳和（多）硅）选择性地蚀刻钨的方法以及氧化钨。这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。等离子体流出物与暴露的表面反应并选择性地去除钨，同时非常缓慢地除去其它暴露的材料。包括顺序和同时的方法以除去例如由于暴露于大气中而产生的薄氧化钨。

15. 发明申请

US20140080308A1 RADICAL-COMPONENT OXIDE ETCH 有权
标题翻译：放射性组分氧化物蚀刻
公开(公告)号：US20140080308A1
公开(公告)日：2014-03-20
申请号：US13834611
申请日：2013-03-15
申请人： APPLIED MATERIALS, INC.
发明人： Zhijun Chen , Jingchun Zhang , Ching-Mei Hsu , Seung Park , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.
摘要翻译：描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氮和氢的前体结合。因此，与典型的Siconi TM工艺相比，反应物在衬底处于高温下时蚀刻具有高氧化硅选择性的图案化异质结构。蚀刻进行而不会在基板表面上产生残留物。该方法可以用于去除硅或氧化硅，同时除去硅或多晶硅，氮化硅或氮化钛。

16. 发明申请

US20200098586A1 SELECTIVE MATERIAL REMOVAL 审中-公开
公开(公告)号：US20200098586A1
公开(公告)日：2020-03-26
申请号：US16138507
申请日：2018-09-21
申请人： Applied Materials, Inc.
发明人： Ming Xia , Dongqing Yang , Ching-Mei Hsu
IPC分类号： H01L21/311 , H01L21/67
摘要： Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.

17. 发明授权

US09991134B2 Processing systems and methods for halide scavenging 有权
公开(公告)号：US09991134B2
公开(公告)日：2018-06-05
申请号：US14246915
申请日：2014-04-07
申请人： APPLIED MATERIALS, INC.
发明人： Anchuan Wang , Xinglong Chen , Zihui Li , Hiroshi Hamana , Zhijun Chen , Ching-Mei Hsu , Jiayin Huang , Nitin K. Ingle , Dmitry Lubomirsky , Shankar Venkataraman , Randhir Thakur
IPC分类号： C23C16/44 , H01J37/32 , H01L21/02 , H01L21/263 , H01L21/268 , H01L21/306 , H01L21/3065 , H01L21/3105 , H01L21/311 , H01L21/3213 , H01L21/324 , H01L21/67 , H01L21/677 , H01L21/683
CPC分类号： H01L21/324 , C23C16/4405 , H01J37/32357 , H01J37/32862 , H01L21/02041 , H01L21/02057 , H01L21/0206 , H01L21/263 , H01L21/2686 , H01L21/30604 , H01L21/3065 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/67069 , H01L21/67075 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L21/67703 , H01L21/67739 , H01L21/67742 , H01L21/6831
摘要： Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

18. 发明授权

US09378969B2 Low temperature gas-phase carbon removal 有权
标题翻译：低温气相除碳
公开(公告)号：US09378969B2
公开(公告)日：2016-06-28
申请号：US14309364
申请日：2014-06-19
申请人： Applied Materials, Inc.
发明人： Ching-Mei Hsu , Nitin K. Ingle , Hiroshi Hamana , Anchuan Wang
IPC分类号： H01L21/3065 , H01L21/311 , H01J37/32 , H01L21/302 , H01L21/306 , H01L21/308
CPC分类号： H01L21/3065 , H01J37/32357 , H01J2237/334 , H01L21/302 , H01L21/306 , H01L21/308 , H01L21/311 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144
摘要： A method of etching carbon films on patterned heterogeneous structures is described and includes a gas phase etch using remote plasma excitation. The remote plasma excites a fluorine-containing precursor and an oxygen-containing precursor, the plasma effluents created are flowed into a substrate processing region. The plasma effluents etch the carbon film more rapidly than silicon, silicon nitride, silicon carbide, silicon carbon nitride and silicon oxide.
摘要翻译：描述了在图案化异质结构上蚀刻碳膜的方法，并且包括使用远程等离子体激发的气相蚀刻。远程等离子体激发含氟前体和含氧前体，产生的等离子体流出物流入基板处理区域。等离子体流出物比硅，氮化硅，碳化硅，氮化碳和氧化硅更快地蚀刻碳膜。

19. 发明申请

US20160181112A1 ANISOTROPIC GAP ETCH 有权
标题翻译：各向异性斑块
公开(公告)号：US20160181112A1
公开(公告)日：2016-06-23
申请号：US14581332
申请日：2014-12-23
申请人： Applied Materials, Inc.
发明人： Jun Xue , Ching-Mei Hsu , Zihui Li , Ludovic Godet , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/3065 , H01L21/265
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32366 , H01J37/32422 , H01J37/3244 , H01J37/32954 , H01L21/2236 , H01L21/265 , H01L21/26506 , H01L21/311 , H01L21/31116 , H01L21/3115 , H01L21/31155 , H01L21/32137 , H01L21/32155 , H01L21/3223
摘要： A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap formed in a single material made from, for example, a silicon-containing material or a metal-containing material. The method includes directionally ion-implanting the patterned structure to implant the bottom of the gap without implanting substantially the walls of the gap. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that either (1) the walls are selectively etched relative to the floor of the gap, or (2) the floor is selectively etched relative to the walls of the gap. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.
摘要翻译：描述了在图案化衬底上各向异性地干蚀刻暴露的衬底材料的方法。图案化衬底具有由例如含硅材料或含金属材料制成的单一材料形成的间隙。该方法包括定向离子注入图案化结构以植入间隙的底部，而基本上不插入间隙的壁。随后，使用含氟前体形成远程等离子体以蚀刻图案化衬底，使得（1）相对于间隙的底板选择性地蚀刻壁，或者（2）相对于壁选择性地蚀刻地板的差距。在没有离子注入的情况下，蚀刻操作将是各向同性的，这是由于在蚀刻过程期间等离子体激发的远程特性。

20. 发明申请

US20150179464A1 DRY-ETCH FOR SELECTIVE TUNGSTEN REMOVAL 有权
标题翻译：干燥剂用于选择性去除钨粉
公开(公告)号：US20150179464A1
公开(公告)日：2015-06-25
申请号：US14617779
申请日：2015-02-09
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Ching-Mei Hsu , Nitin K. Ingle , Zihui Li , Anchuan Wang
IPC分类号： H01L21/3065 , H01L21/02
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/02049 , H01L21/32136
摘要： Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.
摘要翻译：描述了相对于含硅膜（例如氧化硅，氮化碳和（多）硅）选择性地蚀刻钨的方法以及氧化钨。这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。等离子体流出物与暴露的表面反应并选择性地去除钨，同时非常缓慢地除去其它暴露的材料。包括顺序和同时的方法以除去例如由于暴露于大气中而产生的薄氧化钨。

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