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    • 11. 发明授权
    • Movement roller, and belt driving device and image forming device using same
    • 移动辊,皮带驱动装置和使用其的成像装置
    • US08523176B2
    • 2013-09-03
    • US13084602
    • 2011-04-12
    • Jun Saito
    • Jun Saito
    • B65H43/04G03G15/00
    • B65H5/021B65G39/07B65H2404/252B65H2801/06
    • A protrusion (13a) and a protrusion (13b) are formed a predetermined distance apart in the direction of a shaft in the outer circumferential surface of the roller main body (11). The cross sections of the protrusion (13a) and the protrusion (13b) are shaped such that a center portion of the roller main body (11) in the direction of the shaft is a boundary (14), and that on the left side of the boundary (14), a vertex (131a) is displaced to the left side from the perpendicular bisector (133a) of an opposite side (132a) whereas on the right side of the boundary (14), a vertex (131b) is displaced to the right side from the perpendicular bisector (133b) of an opposite side (132b). In this way, in a metallic movement roller that moves a strung endless belt, the winding movement and the like of the belt can be prevented, and the belt can be intentionally moved in a specific direction.
    • 突起(13a)和突起(13b)在辊主体(11)的外周面中沿着轴的方向间隔开预定距离。 突起(13a)和突起(13b)的横截面形状使得辊主体(11)在轴的方向上的中心部分是边界(14),并且在左 边界(14)中,顶点(131a)从相对侧(132a)的垂直平分线(133a)向左侧移位,而在边界(14)的右侧,顶点(131b)位移 到相对侧(132b)的垂直平分线(133b)的右侧。 以这种方式,在移动带状环状带的金属制移动辊中,能够防止带的卷绕动作等,能够有意地沿特定的方向移动带。
    • 12. 发明申请
    • LIQUID SEALED VIBRATION ISOLATING DEVICE
    • 液体密封隔离装置
    • US20120299229A1
    • 2012-11-29
    • US13578647
    • 2011-02-23
    • Nobuo KuboTaiyo GonJun SaitoShunji NagakuraYasuharu Akai
    • Nobuo KuboTaiyo GonJun SaitoShunji NagakuraYasuharu Akai
    • F16F13/10
    • F16F13/106
    • A partition member is provided with an elastic body for absorbing hydraulic pressure fluctuation of the primary liquid chamber and a frame member for supporting an outer circumferential portion of the elastic body while aiming to prevent the rotation of the elastic body. A relief aperture communicating between the primary liquid chamber and the secondary liquid chamber is located on the outer circumferential side in the elastic body supporting region of the frame member. A relief valve for opening and closing the relief aperture is integrally formed on the outer circumferential side of the elastic body. The relief valve is formed of a pair of right and left relief valves. A width across flat sections are formed on a thick-walled outer circumferential section of the elastic body which is located between the right and left relief valves, such as to serve as a detent means.
    • 分隔构件设置有用于吸收主液室的液压波动的弹性体和用于支撑弹性体的外周部的框架构件,同时防止弹性体的旋转。 在主液室和辅液室之间连通的减压孔位于框架构件的弹性体支撑区域的外周侧。 在弹性体的外周侧一体地形成有用于打开和关闭释放孔的安全阀。 安全阀由一对左右安全阀构成。 平面部分的宽度形成在位于左右安全阀之间的弹性体的厚壁外周部分上,以用作制动装置。
    • 13. 发明授权
    • Method of driving reverse conducting semiconductor device, semiconductor device and power supply device
    • 驱动反向导通半导体器件,半导体器件和电源器件的方法
    • US08248116B2
    • 2012-08-21
    • US12867591
    • 2009-02-14
    • Akitaka SoenoJun Saito
    • Akitaka SoenoJun Saito
    • H03K3/00
    • H01L29/7397H01L29/0834H03K17/08128H03K17/567H03K2217/0036H03K2217/0045
    • A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the diode element domain, is provided. When a return current flows in the reverse conducting semiconductor device that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode is applied to second trench gate electrodes of the diode element domain. N-type inversion layers are formed in the periphery of the second trench gate electrodes, and the electrons flow therethrough via a first body contact region and a drift region which are of the same n-type. The injection efficiency of the electrons to the return current is increased, and the injection efficiency of the holes is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased.
    • 提供一种用于反向导电半导体器件的技术,其包括利用具有相互杂质浓度的体区的IGBT元件区域和二极管元件区域,这使得可以调节空穴或电子到二极管元件区域的注入效率。 当返回电流在使用NPNP型IGBT的反向导通半导体器件中流动时,将高于发射极电压的第二电压施加到二极管元件区域的第二沟槽栅电极。 N型反型层形成在第二沟槽栅电极的周围,并且电子通过第一体接触区域和n型相同的漂移区域流过。 电子向返回电流的注入效率提高,并且孔的注入效率降低。 由此,可以防止反向恢复电流的增加,并且可以降低二极管元件区域中引起的开关损耗。
    • 14. 发明申请
    • METHOD FOR PRODUCING A USEFUL SUBSTANCE BY USE OF AN IMMOBILIZED ENZYME
    • 通过使用固定化酶生产有用物质的方法
    • US20090298142A1
    • 2009-12-03
    • US12067664
    • 2006-10-04
    • Jun SaitoYoshitaka SendaToshiteru Komatsu
    • Jun SaitoYoshitaka SendaToshiteru Komatsu
    • C12P7/64C12P1/00
    • C12N9/20C12N11/00C12P7/6418
    • The present invention provides a method for producing a useful substance by supplying, to a fixed-bed reactor packed with an immobilized enzyme, a liquid mixture containing two liquid phases, in which the two liquid phases are allowed to flow in an identical, parallel direction, which method employs a fixed-bed reactor equipped with an insertion unit or tubes, so as to form a plurality of lumens in the fixed-bed reactor, each lumen having a cross section of a circular shape with a diameter of 100 mm or less or having a polygonal shape with a diagonal line of 100 mm or less, wherein the lumens are packed with an immobilized enzyme and the liquid mixture is supplied therethrough. In a reaction performed by passing a reaction mixture exhibiting two liquid phases through a fixed-bed reactor equipped with an immobilized enzyme, overall flow of the reaction liquid is made uniform, to thereby facilitate production of a useful substance in an efficient manner.
    • 本发明提供一种制造有用物质的方法,该方法通过向固定化酶反应器中填充固定化酶,提供含有两个液相的液体混合物,其中允许两个液相沿相同的平行方向流动 该方法采用装备有插入单元或固定床的固定床反应器,以在固定床反应器中形成多个内腔,每个管腔具有直径为100mm以下的圆形截面 或具有对角线为100mm或更小的多边形形状,其中,腔内填充有固定化酶,并且通过其提供液体混合物。 在通过使具有两个液相的反应混合物通过装有固定化酶的固定床反应器进行的反应中,使反应液体的整体流动均匀,从而有效地制备有用物质。
    • 16. 发明授权
    • CMOS device with trench structure
    • CMOS器件具有沟槽结构
    • US06642583B2
    • 2003-11-04
    • US10166575
    • 2002-06-11
    • Shinichi JimboJun Saito
    • Shinichi JimboJun Saito
    • H01L27092
    • H01L27/0921
    • A semiconductor device is provided having a high voltage driver IC reducing malfunction or device destruction. A high voltage IC chip includes a trench structure that surrounds each of two semiconductor regions at different electrical potentials. Specifically, a first semiconductor region forms a ground-potential-based circuit, and a high voltage junction terminating structure around a second semiconductor region forms a floating-potential-based circuit. A trench structure is formed after digging a trench by implanting a high concentration p+ region on a trench wall, or alternatively, by filling the trench with a p+ doped polysilicon or with a dielectric.
    • 提供了具有降低故障或器件破坏的高电压驱动器IC的半导体器件。 高压IC芯片包括围绕不同电位的两个半导体区域中的每一个的沟槽结构。 具体地,第一半导体区域形成基于地电位的电路,并且围绕第二半导体区域的高电压结端接结构形成基于浮置电位的电路。 通过在沟槽壁上注入高浓度p +区域,或者通过用p +掺杂多晶硅或电介质填充沟槽,在挖掘沟槽之后形成沟槽结构。