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11. 发明专利

JP2008235857A Method of thin film process 有权
标题翻译：薄膜工艺方法
公开(公告)号：JP2008235857A
公开(公告)日：2008-10-02
申请号：JP2007317210
申请日：2007-12-07
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： INGLE NITIN K , TANG JING , ZHENG YI , YUAN ZHENG , GE ZHENBIN , LU XINLIANG , KAO CHIEN-TEH , BANTHIA VIKASH , CHANG MEI
IPC分类号： H01L21/76 , H01L21/316 , H01L21/318
CPC分类号： H01L21/67253 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/76232
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor structure by sputtering a sputtered SiO2 above a trench and possibly depositing the same on both sides of the trench, resulting in excessive build-up, and restricting an opening where a bottom up gap filling is achieved in STI gap filling. SOLUTION: The method for forming a semiconductor structure is a step that molds a plurality of feature sections over a substrate that includes a step where at least one spacing lies between two adjacent feature sections. A first dielectric layer is formed on the feature section and inside one spacing. A part of the first dielectric layer interacts with a reacting agent derived from a first precursor and a second precursor, thereby forming a first solid product. The solid product is decomposed to substantially remove the part of the first dielectric layer. A second dielectric layer is formed to substantially fill at least one spacing. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于通过溅射溅射的SiO 2在沟槽上方并且可能将其沉积在沟槽的两侧上而形成半导体结构的方法，导致过度堆积，并且限制开口，其中在STI间隙填充中实现了自下而上的间隙填充。解决方案：用于形成半导体结构的方法是在包括在两个相邻特征部分之间至少一个间隔的步骤的基板上模制多个特征部分的步骤。第一电介质层形成在特征部分上并且在一个间隔内。第一介电层的一部分与衍生自第一前体和第二前体的反应剂相互作用，从而形成第一固体产物。固体产物被分解以基本上除去第一介电层的一部分。形成第二电介质层以基本上填充至少一个间隔。版权所有（C）2009，JPO＆INPIT

12. 发明专利

JP2015053501A シリコン含有膜の平滑ＳｉＣｏｎｉエッチング有权
标题翻译： SMOOTH硅胶蚀刻含硅薄膜
公开(公告)号：JP2015053501A
公开(公告)日：2015-03-19
申请号：JP2014216327
申请日：2014-10-23
申请人：アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated , Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： TANG JING , NITIN INGLE , YANG DONGQING
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357 , H01J2237/3341
摘要：【課題】シリコン含有材料を、フッ素と比べた水素の流量比が従来技術で見られる流量比よりも大きい、または小さいSiConi(登録商標)エッチングする方法を提供する。【解決手段】エッチング後の表面粗さを低減する代替手段には、前駆体流および/またはプラズマ出力をパルス化することが含まれ、それによって相対的に高い基板温度が維持され、複数のステップでSiConi(登録商標)が実施される。これらの取組みのそれぞれは、単独または組合せで固体残留物粒径を限定することによって、エッチングされた表面の粗さを低減する。【選択図】図1
摘要翻译：要解决的问题：提供一种对含硅材料进行SiConi（R）蚀刻的方法，其与氟相比具有比现有技术中更大或更小的氢气流量比。解决方案：还原性的替代方法后蚀刻表面粗糙度包括脉冲前体流和/或等离子体功率，从而保持相对较高的衬底温度并以多个步骤执行SiConi。单独或组合的这些方法中的每一种通过限制固体残留物颗粒尺寸来减少蚀刻表面的粗糙度。

13. 发明专利

JP2010114424A Integral patterning of large feature portion and array using spacer mask patterning process flow 有权
标题翻译：大型特征部分的集成方案和使用间隔板掩模过程流程的阵列
公开(公告)号：JP2010114424A
公开(公告)日：2010-05-20
申请号：JP2009217751
申请日：2009-09-18
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： BENCHER CHRISTOPHER DENNIS , TANG JING
IPC分类号： H01L21/3065 , G03F1/08 , H01L21/027
CPC分类号： H01L21/3086 , H01L21/3088 , Y10S438/95
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a patterned feature portion on a substrate having a higher density (that is, a low pitch) as compared to what is possible using a standard photolithography processing technique using a single high-resolution photomask, while changing both the width of the patterned feature portion and a spacing (trench width) between the patterned features portions are in an integrated circuit.
SOLUTION: The method of forming the patterned feature portion includes the steps of: forming a core layer and a protective layer on the substrate (S252); transferring a resist pattern to the core layer (S256); removing the overall protective layer on a narrow pattern and a part of the protective layer on a wide pattern by resist removing self-limiting etching (S260); forming a conformal dielectric layer and performing directional etching (S264); and then removing the core layer from a narrow pattern structure (S268).
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在具有较高密度（即，低间距）的基底上形成图案化特征部分的方法，与使用单个高分辨率的标准光刻处理技术相比，同时改变图案化特征部分的宽度和图案化特征部分之间的间隔（沟槽宽度）在集成电路中。解决方案：形成图案特征部分的方法包括以下步骤：在衬底上形成芯层和保护层（S252）; 将抗蚀剂图案转印到芯层（S256）上; 通过抗蚀剂去除自限蚀刻去除在宽图案上的窄图案和保护层的一部分上的整体保护层（S260）; 形成保形介电层并执行定向蚀刻（S264）; 然后从窄图案结构去除芯层（S268）。版权所有（C）2010，JPO＆INPIT

14. 发明专利

SG143229A1 METHODS OF THIN FILM PROCESS 未知
公开(公告)号：SG143229A1
公开(公告)日：2008-06-27
申请号：SG2007183189
申请日：2007-12-04
申请人： APPLIED MATERIALS INC
发明人： INGLE NITIN K , TANG JING , ZHENG YI , YUAN ZHENG , GE ZHENBIN , LU XINLIANG , KAO CHIEN-TEH , BANTHIA VIKASH , CHANG MEI
IPC分类号： H01L21/764 , H01L21/477
摘要： METHODS OF THIN FILM PROCESS A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

15. 发明专利

SG181669A1 SMOOTH SICONI ETCH FOR SILICON-CONTAINING FILMS 未知
公开(公告)号：SG181669A1
公开(公告)日：2012-07-30
申请号：SG2012043469
申请日：2010-11-22
申请人： APPLIED MATERIALS INC
发明人： TANG JING , INGLE NITIN , YANG DONGQING
摘要： A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.

16. 发明专利

SG189944A1 UNIFORM DRY ETCH IN TWO STAGES 未知
公开(公告)号：SG189944A1
公开(公告)日：2013-07-31
申请号：SG2013029897
申请日：2011-12-13
申请人： APPLIED MATERIALS INC
发明人： YANG DONGQING , TANG JING , INGLE NITIN
摘要： A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.

17. 发明申请

WO2009089372A2 SYSTEMS AND METHODS FOR ANALYSIS AND TREATMENT OF A BODY LUMEN 审中-公开
标题翻译：用于分析和治疗体液的系统和方法
公开(公告)号：WO2009089372A2
公开(公告)日：2009-07-16
申请号：PCT/US2009030467
申请日：2009-01-08
申请人： CORNOVA INC , TANG JING , RYAN S ERIC
发明人： TANG JING , RYAN S ERIC
IPC分类号： A61F2/958 , A61M31/00
CPC分类号： A61B5/6852 , A61B5/0066 , A61B5/0071 , A61B5/0075 , A61B5/0084 , A61B5/0086 , A61B5/02007 , A61B5/14539 , A61B5/6853 , A61B6/12 , A61B2017/22001 , A61B2018/00345 , A61B2018/00386 , A61B2018/00404 , A61B2018/00577 , A61B2018/00982 , A61B2562/0242 , A61F2/958 , A61M25/1011 , A61M25/1027 , A61M25/104 , A61M29/02 , A61M2025/1079 , A61M2025/1088
摘要： A catheter is provided for placement within a body lumen, the catheter including a flexible conduit that is elongated along a longitudinal axis, the flexible conduit having a proximal end and a distal end. The catheter further includes at least one delivery waveguide and at least one collection waveguide positioned along the flexible conduit, the at least one delivery waveguide and the at least one collection waveguide constructed and arranged to transmit radiation at a wavelength in a range of about 250 to 2500 nanometers. The catheter further includes a flexible, expandable first surface encircling surrounding a segment of the conduit, a transmission output of the at least one delivery waveguide and a transmission input of the at least one collection waveguide located within the flexible, expandable first surface, and the distal end of at least one of the at least one delivery waveguide and the at least one collection waveguide tethered to the flexible, expandable first surface radially translatable with respect to the flexible, expandable first surface, the at least one transmission input located between a portion of the flexible, expandable first surface and a portion of the second surface.
摘要翻译：提供用于放置在体腔内的导管，所述导管包括沿着纵向轴线伸长的柔性导管，所述柔性导管具有近端和远端。所述导管还包括至少一个传送波导和至少一个收集波导，所述至少一个收集波导沿着所述柔性管道设置，所述至少一个传送波导和所述至少一个收集波导构造并布置成传送波长范围为约250至 2500纳米。所述导管还包括柔性的可扩张的第一表面，所述第一表面环绕所述导管的一部分，所述至少一个递送波导的传输输出和位于所述柔性的可扩张的第一表面内的所述至少一个收集波导的传输输入，所述至少一个输送波导和所述至少一个收集波导中的至少一个的远侧端部系于所述柔性可扩展第一表面，所述柔性可扩展第一表面相对于所述柔性可扩展第一表面可径向平移，所述至少一个变速器输入位于部分柔性可膨胀的第一表面和第二表面的一部分。

18. 发明申请

WO02096479A2 BALLOON CATHETER 审中-公开
标题翻译：气球导管
公开(公告)号：WO02096479A2
公开(公告)日：2002-12-05
申请号：PCT/US0215118
申请日：2002-05-14
申请人： INFRAREDX INC , RYAN S ERIC , BOUMA BRETT E , TEARNEY GUILLERMO J , FURNISH SIMON , TANG JING , ZULUAGA ANDRES
发明人： RYAN S ERIC , BOUMA BRETT E , TEARNEY GUILLERMO J , FURNISH SIMON , TANG JING , ZULUAGA ANDRES
IPC分类号： A61B5/00 , A61M
CPC分类号： A61B5/6853 , A61B5/0086 , A61B5/0507 , A61B5/6886
摘要： An apparatus includes a feedback loop for controlling an extent of a gap between a wall of a balloon mounted on a catheter and a wall of a lumen into which the catheter is inserted. The apparatus includes a radiation detector mounted within the balloon for generating a feedback signal having information indicative of whether the extent of the gap is greater than or less than a desired value. The feedback loop receives the feedback signal and controls a size of the balloon to cause the extent of the gap to approach the desired value.
摘要翻译：一种装置包括用于控制安装在导管上的球囊的壁与插入其中的内腔的壁之间的间隙的程度的反馈回路。该装置包括安装在气球内的放射线检测器，用于产生具有指示间隙的程度是否大于或小于期望值的信息的反馈信号。反馈回路接收反馈信号并控制气囊的尺寸以使间隙的程度接近所需值。

19. 发明申请

WO2012040362A3 SYSTEMS AND METHODS FOR ANALYSIS AND TREATMENT OF A BODY LUMEN 审中-公开
标题翻译：用于分析和治疗体液的系统和方法
公开(公告)号：WO2012040362A3
公开(公告)日：2012-06-14
申请号：PCT/US2011052609
申请日：2011-09-21
申请人： CORNOVA INC , RYAN S ERIC , TANG JING , GAMBALE RICHARD
发明人： RYAN S ERIC , TANG JING , GAMBALE RICHARD
IPC分类号： A61B1/00 , A61B5/027 , G01J3/00
CPC分类号： A61B5/0086 , A61B5/0062 , A61B5/0075 , A61B5/0084 , A61B5/02007 , A61B5/1076 , A61B5/4836 , A61B5/6853 , A61M25/104 , G01J3/0218 , G01J3/0264 , G01J3/42
摘要： A system is provided for probing a body lumen that includes a flexible conduit that is elongated along a longitudinal axis, the flexible conduit having a proximal end and a distal end, at least one delivery waveguide and at least one collection waveguide extending along the flexible conduit, a transmission output of the at least one delivery waveguide and a transmission input of the at least one collection waveguide located along a distal portion of the conduit. A spectrometer is connected to the at least one delivery waveguide and the at least one collection waveguide, the spectrometer configured to perform spectroscopy. A controller system is configured to calculate a distance between the flexible conduit and the wall of the body lumen based on a spectroscopic measurement of the at least one primary radiation signal that traveled between the flexible conduit and body lumen.
摘要翻译：提供了一种用于探测体腔的系统，所述体腔包括沿着纵向轴线伸长的柔性导管，所述柔性导管具有近端和远端，至少一个输送波导和至少一个收集波导，所述收集波导沿着柔性导管，所述至少一个传送波导的传输输出和沿着所述导管的远端部分定位的所述至少一个收集波导的传输输入。分光计连接到至少一个传送波导和至少一个收集波导，分光计配置成执行光谱分析。控制器系统被配置为基于在柔性导管和体腔之间行进的至少一个初级辐射信号的光谱测量来计算柔性导管和体腔的壁之间的距离。

20. 发明申请

WO2008051197A3 SMALL-MOLECULE BOTULINUM TOXIN INHIBITORS 审中-公开
标题翻译：小分子氧化铁抑制剂
公开(公告)号：WO2008051197A3
公开(公告)日：2009-04-09
申请号：PCT/US2006036710
申请日：2006-09-20
申请人： MAYO FOUNDATION , US GOV SEC ARMY , PANG YUAN-PING , MILLARD CHARLES B , PARK JEWN GIEW , TANG JING , SCHMIDT JAMES J
发明人： PANG YUAN-PING , MILLARD CHARLES B , PARK JEWN GIEW , TANG JING , SCHMIDT JAMES J
IPC分类号： A01N57/00 , A61K31/675
CPC分类号： A61K31/675
摘要： Small-molecule inhibitors of Botulinum toxin, including BoNTA, BoNTD and BoNTE are provided, as well as methods of using the inhibitors.
摘要翻译：提供了肉毒杆菌毒素的小分子抑制剂，包括BoNTA，BoNTD和BoNTE，以及使用抑制剂的方法。

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