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11. 外观设计

USD612032S1 Enclosure of an evaporative cooler 有权
公开(公告)号：USD612032S1
公开(公告)日：2010-03-16
申请号：US29343559
申请日：2009-09-15
申请人： Paul Gildersleeve , Mario Luna , Yun Seok Kim , Jace Noel Green
设计人： Paul Gildersleeve , Mario Luna , Yun Seok Kim , Jace Noel Green

12. 外观设计

USD612030S1 Enclosure of an evaporative cooler 有权
标题翻译：蒸发式冷却器外壳
公开(公告)号：USD612030S1
公开(公告)日：2010-03-16
申请号：US29343556
申请日：2009-09-15
申请人： Paul Gildersleeve , Mario Luna , Yun Seok Kim , Jace Noel Green
设计人： Paul Gildersleeve , Mario Luna , Yun Seok Kim , Jace Noel Green

13. 发明授权

US07482677B2 Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures 有权
标题翻译：具有高介电常数的介电结构和具有电介质结构的非易失性半导体存储器件
公开(公告)号：US07482677B2
公开(公告)日：2009-01-27
申请号：US11339086
申请日：2006-01-25
申请人： Jong-Cheol Lee , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo , Gab-Jin Nam , Young-Geun Park , Jae-Hyoung Choi , Jae-Hyun Yeo , Ha-Jin Lim , Yun-Seok Kim
发明人： Jong-Cheol Lee , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo , Gab-Jin Nam , Young-Geun Park , Jae-Hyoung Choi , Jae-Hyun Yeo , Ha-Jin Lim , Yun-Seok Kim
IPC分类号： H01L21/4763
CPC分类号： H01L21/022 , H01L21/02142 , H01L21/02156 , H01L21/02175 , H01L21/28273 , H01L21/3141 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L27/11502 , H01L27/11521
摘要： In a method of manufacturing a dielectric structure, after a tunnel oxide layer pattern is formed on a substrate, a floating gate is formed on the tunnel oxide layer. After a first dielectric layer pattern including a metal silicon oxide and a second dielectric layer pattern including a metal silicon oxynitride are formed, a control gate is formed on the dielectric structure. Since the dielectric structure includes at least one metal silicon oxide layer and at least one metal silicon oxynitride layer, the dielectric structure may have a high dielectric constant and a good thermal resistance. A non-volatile semiconductor memory device including the dielectric structure may have good electrical characteristics such as a large capacitance and a low leakage current.
摘要翻译：在制造电介质结构的方法中，在衬底上形成隧道氧化物层图案之后，在隧道氧化物层上形成浮栅。在形成包括金属氧化硅和包括金属氮氧化硅的第二电介质层图案的第一电介质层图案之后，在电介质结构上形成控制栅极。由于介电结构包括至少一个金属氧化硅层和至少一个金属氮氧化硅层，所以介电结构可以具有高介电常数和良好的耐热性。包括电介质结构的非易失性半导体存储器件可能具有良好的电特性，例如大电容和低漏电流。

14. 发明授权

US07420306B2 Brushless DC motor 失效
标题翻译：无刷直流电机
公开(公告)号：US07420306B2
公开(公告)日：2008-09-02
申请号：US11229552
申请日：2005-09-20
申请人： Sang Hoon Park , Hyung Chul Lee , Sang Yong An , Chun Mo Sung , Yun Seok Kim , Bum Young Byun
发明人： Sang Hoon Park , Hyung Chul Lee , Sang Yong An , Chun Mo Sung , Yun Seok Kim , Bum Young Byun
IPC分类号： H02K1/22 , H02K1/27
CPC分类号： H02K1/276 , H02K29/03
摘要： A brushless DC motor prevents disconnection of a magnetic flux and to minimize leakage of the magnetic flux, thereby reducing torque ripple. A plurality of magnetic flux-disconnection preventing holes are arranged in an outer periphery of a rotor core between installing holes into which magnets are fitted. The plurality of magnetic flux-disconnection preventing holes are symmetrical at both sides about a first line connecting a center of the rotor core to a center between the adjacent installing holes, and an angle between the first line and a second line connecting the center of the rotor core to an outermost end of the plurality of magnetic flux-disconnection preventing holes is about 15˜20°. A length between an outer periphery of the rotor core and an outer periphery of the plurality of magnetic flux-disconnection preventing holes is smaller than a gap between the rotor core and the stator.
摘要翻译：无刷直流电动机防止磁通断开并使磁通量的泄漏最小化，从而减小转矩脉动。在安装有磁铁的安装孔之间，在转子铁心的外周配置有多个防磁通孔。多个防磁通孔在两侧围绕连接转子铁心的中心到相邻安装孔之间的中心的第一线对称，并且第一线与连接中心的第二线之间的角度对称转子芯到多个防磁通孔的最外端约为15〜20°。转子芯体的外周与多个防磁漏孔的外周之间的长度小于转子铁心与定子之间的间隙。

15. 发明申请

US20060263910A1 Data recording medium including ferroelectric layer and method of manufacturing the same 审中-公开
标题翻译：包括铁电层的数据记录介质及其制造方法
公开(公告)号：US20060263910A1
公开(公告)日：2006-11-23
申请号：US11355968
申请日：2006-02-17
申请人： Seung-bum Hong , Yun-seok Kim , Seung-hyun Kim , Kwang-soo No
发明人： Seung-bum Hong , Yun-seok Kim , Seung-hyun Kim , Kwang-soo No
IPC分类号： H01L21/00 , H01L29/94
CPC分类号： H01L21/02282 , G11B9/02 , G11C11/22 , H01L21/02175 , H01L21/02186 , H01L21/02197 , H01L21/02304 , H01L21/31691 , H01L27/101
摘要： A data recording medium including a ferroelectric layer and a method of manufacturing the same are provided. In the data recording medium, a barrier layer, a conductive layer, and a seed layer are sequentially stacked on a substrate. A data recording layer is formed on the seed layer and has a vertical residual polarization.
摘要翻译：提供了包括铁电层的数据记录介质及其制造方法。在数据记录介质中，阻挡层，导电层和种子层依次层叠在基板上。在种子层上形成数据记录层，并具有垂直残余极化。

16. 发明申请

US20060257563A1 Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique 审中-公开
标题翻译：使用原子层沉积技术制造掺杂硅的金属氧化物层的方法
公开(公告)号：US20060257563A1
公开(公告)日：2006-11-16
申请号：US11329696
申请日：2006-01-11
申请人： Seok-Joo Doh , Shi-Woo Rhee , Jong-Pyo Kim , Jung-Hyoung Lee , Jong-Ho Lee , Yun-Seok Kim
发明人： Seok-Joo Doh , Shi-Woo Rhee , Jong-Pyo Kim , Jung-Hyoung Lee , Jong-Ho Lee , Yun-Seok Kim
IPC分类号： C23C16/00
CPC分类号： C23C16/401 , C23C16/45529 , C23C16/45531
摘要： There are provided methods of fabricating a silicon-doped metal oxide layer on a semiconductor substrate using an atomic layer deposition technique. The methods include an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon-doped metal oxide layer formation cycle Q times. At least one of the values K and Q is an integer of 2 or more. K and Q are integers ranging from 1 to about 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, and then injecting an oxide gas into the reactor. The silicon-doped metal oxide layer formation cycle includes supplying a metal source gas including silicon into a reactor containing the substrate, and then injecting an oxide gas into the reactor. The sequence of operations of repeatedly performing the metal oxide layer formation cycle K times, followed by repeatedly performing the silicon-doped metal oxide layer formation cycle Q times, is performed one or more times until a silicon-doped metal oxide layer with a desired thickness is formed on the substrate. In addition, a method of fabricating a silicon-doped hafnium oxide (Si-doped HfO2) layer according to a similar invention method is also provided.
摘要翻译：提供了使用原子层沉积技术在半导体衬底上制造掺硅金属氧化物层的方法。这些方法包括重复进行金属氧化物层形成循环K次的操作和重复进行掺硅金属氧化物层形成循环Q次的操作。值K和Q中的至少一个是2以上的整数。 K和Q分别为1至约10的整数。金属氧化物层形成循环包括将金属源气体供给到包含基板的反应器中，然后将氧化物气体注入到反应器中的步骤。掺杂硅的金属氧化物层形成循环包括将含有硅的金属源气体供给到含有该基板的反应器中，然后将氧化物气体注入反应器。重复执行金属氧化物层形成循环K次的操作顺序，随后重复进行掺杂硅的金属氧化物层形成循环Q次，执行一次或多次，直到具有所需厚度的掺硅金属氧化物层形成在基板上。此外，还提供了根据类似的发明方法制造掺杂硅的氧化铪（Si掺杂的HfO 2 N 2）层的方法。

17. 发明申请

US20060244147A1 Dielectric structures having high dielectric constants, methods of forming the dielectric structures, non-volatile semiconductor memory devices having the dielectric structures and methods of manufacturing the non-volatile semiconductor memory devices 有权
标题翻译：具有高介电常数的介电结构，形成电介质结构的方法，具有电介质结构的非易失性半导体存储器件以及制造非易失性半导体存储器件的方法
公开(公告)号：US20060244147A1
公开(公告)日：2006-11-02
申请号：US11339086
申请日：2006-01-25
申请人： Jong-Cheol Lee , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo , Gab-Jin Nam , Young-Geun Park , Jae-Hyoung Choi , Jae-Hyun Yeo , Ha-Jin Lim , Yun-Seok Kim
发明人： Jong-Cheol Lee , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo , Gab-Jin Nam , Young-Geun Park , Jae-Hyoung Choi , Jae-Hyun Yeo , Ha-Jin Lim , Yun-Seok Kim
IPC分类号： H01L23/48
CPC分类号： H01L21/022 , H01L21/02142 , H01L21/02156 , H01L21/02175 , H01L21/28273 , H01L21/3141 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L27/11502 , H01L27/11521
摘要： In a method of manufacturing a dielectric structure, after a tunnel oxide layer pattern is formed on a substrate, a floating gate is formed on the tunnel oxide layer. After a first dielectric layer pattern including a metal silicon oxide and a second dielectric layer pattern including a metal silicon oxynitride are formed, a control gate is formed on the dielectric structure. Since the dielectric structure includes at least one metal silicon oxide layer and at least one metal silicon oxynitride layer, the dielectric structure may have a high dielectric constant and a good thermal resistance. A non-volatile semiconductor memory device including the dielectric structure may have good electrical characteristics such as a large capacitance and a low leakage current.
摘要翻译：在制造电介质结构的方法中，在衬底上形成隧道氧化物层图案之后，在隧道氧化物层上形成浮栅。在形成包括金属氧化硅和包括金属氮氧化硅的第二电介质层图案的第一电介质层图案之后，在电介质结构上形成控制栅极。由于介电结构包括至少一个金属氧化硅层和至少一个金属氮氧化硅层，所以介电结构可以具有高介电常数和良好的耐热性。包括电介质结构的非易失性半导体存储器件可能具有良好的电特性，例如大电容和低漏电流。

18. 发明授权

US06903302B2 Method for manufacturing valve seat using laser cladding process 失效
标题翻译：使用激光熔覆工艺制造阀座的方法
公开(公告)号：US06903302B2
公开(公告)日：2005-06-07
申请号：US10134094
申请日：2002-04-24
申请人： Yun-Seok Kim , Jea-Woong Yi , Jae-Hwan Kim , Phil-Gi Lee
发明人： Yun-Seok Kim , Jea-Woong Yi , Jae-Hwan Kim , Phil-Gi Lee
IPC分类号： B23K26/00 , B23K26/20 , B23K26/34 , C23C24/10 , C23C26/02 , F01L3/02 , F01L3/04 , F01L3/24 , B21K1/22 , B23K26/06 , B21K2/00
CPC分类号： C23C24/10 , B23K26/34 , C23C26/02 , F01L3/02 , F01L3/04 , Y10T29/49298 , Y10T29/49306 , Y10T29/49309
摘要： A method for manufacturing valve seats using a laser cladding process is provided that includes forming a casting material on which the valve seats are to be formed; fabricating a valve seat target position on which laser cladding will be performed, the valve seat target position being provided at a location on the casting material where a valve seat is to be formed; removing an oxidation film formed on the valve seat target position; injecting a metal powder mixture on the valve seat target position, the metal powder mixture being realized through a mixture of two or more metal powders at a predetermined ratio by weight %; and irradiating a laser beam on the metal powder mixture to clad the metal powder mixture on the valve seat target position to thereby form the valve seat.
摘要翻译：提供一种使用激光熔覆工艺制造阀座的方法，其包括形成要在其上形成阀座的铸造材料; 制造将在其上进行激光熔覆的阀座目标位置，阀座目标位置设置在铸造材料上将要形成阀座的位置处; 去除形成在阀座目标位置上的氧化膜; 在阀座目标位置上注入金属粉末混合物，金属粉末混合物通过两种或更多种金属粉末的混合物以预定的重量百分比的比例实现; 并且将激光束照射在金属粉末混合物上以将金属粉末混合物包覆在阀座目标位置上，从而形成阀座。

19. 发明申请

US20050037630A1 Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices 有权
标题翻译：在集成电路器件中在界面层上形成高介电层的后热处理方法
公开(公告)号：US20050037630A1
公开(公告)日：2005-02-17
申请号：US10659945
申请日：2003-09-10
申请人： Seok-Joo Doh , Hyung-suk Jung , Nae-in Lee , Jong-ho Lee , Yun-seok Kim
发明人： Seok-Joo Doh , Hyung-suk Jung , Nae-in Lee , Jong-ho Lee , Yun-seok Kim
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02329 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/02323 , H01L21/02337 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3143 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518
摘要： High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.
摘要翻译：可以将通过氧化，退火，氧化，氧化，氧化，氧化，氧化钇和/或其他金属氧化物和/或硅衬底上的其它金属氧化物和硅酸盐形成的高介电层氮化和后热处理，或氧化和退火的组合以形成具有优异迁移率和界面特性的高介电层。

20. 发明授权

US08883364B2 Manifold insert having distribution guides and fuel cell stack comprising the same 有权
标题翻译：具有分配引导件和包括该引导件的燃料电池堆的歧管插件
公开(公告)号：US08883364B2
公开(公告)日：2014-11-11
申请号：US13103200
申请日：2011-05-09
申请人： Haeng Jin Ko , Young Bum Kum , Gi Young Nam , Yun Seok Kim
发明人： Haeng Jin Ko , Young Bum Kum , Gi Young Nam , Yun Seok Kim
IPC分类号： H01M2/38 , H01M8/24 , B60L3/00 , H01M8/04 , B60L11/18 , H01M8/10
CPC分类号： H01M8/2485 , B60L3/0053 , B60L11/1898 , B60L2240/36 , H01M8/04089 , H01M8/2483 , H01M2008/1095 , Y02E60/50 , Y02T90/34
摘要： A manifold insert installed in a fuel cell having distribution guides is provided. The manifold insert is configured to form a flow field from an inlet port of fluid to an outlet port connected to a fuel cell stack. This manifold insert includes a plurality of distribution guides that divide the flow field from the inlet port to the outlet port such that the fuel cell stack is divided into a plurality of regions according to the distance from the inlet port. The distribution guides have surfaces that are at least partially curved such that the flow of the fluid from the inlet port to the outlet port is changed by the curved surfaces and form a plurality of guide flow fields such that the fluid is supplied to the divided regions of the fuel cell stack along the plurality of guide flow fields at different flow rates.
摘要翻译：提供了一种安装在具有分配引导件的燃料电池中的歧管插件。歧管插入件构造成形成从流体的入口到连接到燃料电池堆的出口的流场。该歧管插入件包括多个分配引导件，其将流场从入口端口分配到出口端口，使得燃料电池堆根据与入口的距离被分成多个区域。分配引导件具有至少部分弯曲的表面，使得流体从入口到出口的流动由弯曲表面改变，并形成多个引导流场，使得流体被供应到分割区域的燃料电池堆沿着多个引导流场以不同的流速。

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