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11. 发明授权

US08106475B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08106475B2
公开(公告)日：2012-01-31
申请号：US12142869
申请日：2008-06-20
申请人： Yoshinori Kitamura , Koichi Matsuno , Kazunori Nishikawa
发明人： Yoshinori Kitamura , Koichi Matsuno , Kazunori Nishikawa
IPC分类号： H01L21/76 , H01L21/762
CPC分类号： H01L29/7881 , H01L21/76224 , H01L27/105 , H01L27/11526 , H01L27/11541 , H01L29/66825
摘要： A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element isolation trenches having larger opening widths than the first opening widths, element isolation insulating films buried in the first element isolation trenches so that upper parts of the trenches have partial openings, respectively and buried in the second element isolation trenches respectively, and coating type oxide films formed so as to fill the openings of the first element isolation trenches, respectively. The coating-type oxide films are not buried in the second element isolation insulating trenches.
摘要翻译：一种半导体器件包括形成有多个具有第一开口宽度的第一元件隔离沟槽和具有比第一开口宽度更大的开口宽度的多个第二元件隔离沟槽的半导体衬底，埋在第一元件隔离沟槽中的元件隔离绝缘膜使得沟槽的上部分别具有部分开口并分别埋在第二元件隔离沟槽中，并且分别形成为填充第一元件隔离沟槽的开口的涂覆型氧化物膜。涂层型氧化物膜不会埋在第二元件隔离绝缘沟槽中。

12. 发明授权

US07214580B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07214580B2
公开(公告)日：2007-05-08
申请号：US11000173
申请日：2004-12-01
申请人： Yoshinori Kitamura , Shigeki Sugimoto
发明人： Yoshinori Kitamura , Shigeki Sugimoto
IPC分类号： H01L21/8238
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
摘要翻译：公开了一种半导体器件，包括半导体衬底，该半导体衬底包括由隔离沟槽分隔开的第一和第二元件形成区域，形成在第一和第二元件形成区域上的第一和第二下部栅极绝缘膜，形成在第一和第二元件形成区域上的第一和第二浮置栅极和第二下栅极绝缘膜，隔离绝缘膜，至少形成在所述隔离沟槽中，并且在其上表面上形成有凹部，形成在所述第一和第二浮栅上的上栅极绝缘膜，以及控制栅极线，与第一和第二浮动栅极相对的相对部分，其中上部栅极绝缘膜被插入，并且位于凹部内部的部分，第一浮动栅极包括与第二浮动栅极相对的侧表面，并且与包括的侧表面完全对准在第一元件形成区域中并由隔离沟槽限定。

13. 发明申请

US20060150669A1 Method of connecting thin tube to heat transfer tube 有权
标题翻译：将细管连接到传热管的方法
公开(公告)号：US20060150669A1
公开(公告)日：2006-07-13
申请号：US10525869
申请日：2004-05-31
申请人： Yoshinori Kitamura , Nobuhiro Sahara
发明人： Yoshinori Kitamura , Nobuhiro Sahara
IPC分类号： F25B39/02 , B21D53/02 , B21D53/08 , B23P15/26
CPC分类号： B21D39/048 , B21D41/04 , B21D53/08 , B23K1/0008 , B23K2101/06 , B23P2700/09 , F16L13/08 , F25B41/067 , F28F9/0275 , F28F9/26 , F28F2275/04 , Y10T29/4935 , Y10T29/49364 , Y10T29/49389
摘要： A connecting method and structure is provided to reliably ensure the compressive strength of the joint between a heat transfer pipe and a capillary tube when connecting the capillary tube to the heat transfer pipe by direct brazing. In the connection structure between the heat transfer pipe and the capillary tube, a pinched part in which a pipe end part of the capillary tube is inserted and a brazing filler material pooling part for pooling on a pipe end face side of the pinched part the brazing filler material that flows into the pinched part are formed. When inserted into the pinched part, the capillary tube is brazed to the heat transfer pipe.
摘要翻译：提供连接方法和结构，以通过直接钎焊将毛细管连接到传热管时可靠地确保传热管和毛细管之间的接头的抗压强度。在传热管与毛细管之间的连接结构中，插入毛细管的管端部的夹持部和用于在夹持部的管端面侧收集的钎料填充部，钎焊形成流入夹持部的填充材料。当插入夹紧部分时，毛细管钎焊到传热管上。

14. 发明授权

US06617955B2 Positive temperature coefficient thermistor 有权
公开(公告)号：US06617955B2
公开(公告)日：2003-09-09
申请号：US10050921
申请日：2002-01-22
申请人： Hiroki Tanaka , Yoshinori Kitamura
发明人： Hiroki Tanaka , Yoshinori Kitamura
IPC分类号： H01C710
CPC分类号： H01C1/1406 , H01C1/014 , H04N5/44 , H04N9/29
摘要： An inexpensive positive temperature coefficient thermistor has metal terminals which have been miniaturized without deteriorating the characteristics or sacrificing the reliability of the device. The metal terminals include supporting members and springs constructed such that a total width of the supporting members is smaller than a total width of the springs. In addition, connecting portions at the upper ends of the metal terminals engage with a case main body or a covering member to be retained at predetermined positions.

15. 发明授权

US6147823A Method for recording digital data including a data conversion or format conversion, and apparatus using the method 失效
标题翻译：用于记录包括数据转换或格式转换的数字数据的方法以及使用该方法的装置
公开(公告)号：US6147823A
公开(公告)日：2000-11-14
申请号：US893612
申请日：1997-07-10
申请人： Chiyoko Matsumi , Ichiro Arimura , Akira Iketani , Masazumi Yamada , Tatsuro Juri , Yukio Kurano , Yoshinori Kitamura , Chojuro Yamamitsu
发明人： Chiyoko Matsumi , Ichiro Arimura , Akira Iketani , Masazumi Yamada , Tatsuro Juri , Yukio Kurano , Yoshinori Kitamura , Chojuro Yamamitsu
IPC分类号： G11B5/008 , G11B5/09 , G11B15/02 , G11B15/07 , G11B15/087 , G11B15/12 , G11B15/18 , G11B15/467 , G11B15/473 , G11B15/52 , G11B15/60 , G11B20/00 , G11B20/10 , G11B27/00 , G11B27/032 , G11B27/11 , G11B27/28 , H03M7/30 , H03M13/00 , H04N5/7826 , H04N5/783 , H04N5/92 , H04N5/926 , H04N5/945 , H04N9/79 , G11B5/00
CPC分类号： G11B27/11 , G11B15/02 , G11B15/07 , G11B15/087 , G11B15/125 , G11B15/1875 , G11B15/4671 , G11B15/4673 , G11B20/00007 , G11B20/10 , G11B20/10527 , G11B27/005 , G11B27/032 , G11B5/0086 , G11B5/09 , H03M13/00 , H03M7/30 , H04N5/78263 , H04N5/783 , H04N5/9205 , H04N9/7921 , G11B15/4731 , G11B15/52 , G11B15/602 , G11B2020/10592 , G11B2020/10981 , G11B2220/90 , G11B27/28 , H04N5/9201 , H04N5/9261 , H04N5/9267 , H04N5/945
摘要： A plurality of digital signals having total data rates of n bit/s or less are input to a digital recording device recording digital signals having a data rate of n bit/s. The digital signals are subjected to format-conversion for the digital recording device to be recorded therein. Furthermore, signals having a data rate of n/i.sub.1 bit/s or less are subjected to format-conversion to be recorded i.sub.1 times in the digital recording device. In the case where the data rate of the digital signals to be input is n/j bit/s, the digital signals are subjected to format-conversion so that the amount of data capable of being recorded per unit time is decreased by i/j; thus, the digital signals are recorded for a long period of time under the condition that the data recording time is prolonged j times. Furthermore, when input data to be recorded on a magnetic tape at a normal data rate by using a magnetic head mounted on a rotary cylinder is recorded, the recording device of the present invention makes it possible to select a plurality of types of track angles generated by the rotation number of the cylinder, the tape traveling speed, and the like.
摘要翻译：将具有n位/秒以下的总数据速率的多个数字信号输入到记录数据速率为n位/秒的数字信号的数字记录装置。对数字信号进行数字记录装置的格式转换以被记录在其中。此外，数据速率为n / i1比特/秒以下的信号经过格式转换以在数字记录装置中被记录为i1次。在要输入的数字信号的数据速率为n / j比特/秒的情况下，对数字信号进行格式转换，使得每单位时间能够记录的数据量减少i / j ; 因此，在数据记录时间延长j次的条件下，数字信号被长时间记录。此外，当记录通过使用安装在旋转磁盘上的磁头以正常数据速率记录在磁带上的输入数据时，本发明的记录装置使得可以选择产生的多种类型的磁道角度通过圆筒的转数，带的行进速度等。

16. 发明授权

US6038094A Digital data recording device having a rotary cylinder 失效
标题翻译：具有旋转圆筒的数字数据记录装置
公开(公告)号：US6038094A
公开(公告)日：2000-03-14
申请号：US522679
申请日：1995-09-01
申请人： Chiyoko Matsumi , Ichiro Arimura , Akira Iketani , Masazumi Yamada , Tatsuro Juri , Yukio Kurano , Yoshinori Kitamura , Chojuro Yamamitsu
发明人： Chiyoko Matsumi , Ichiro Arimura , Akira Iketani , Masazumi Yamada , Tatsuro Juri , Yukio Kurano , Yoshinori Kitamura , Chojuro Yamamitsu
IPC分类号： G11B5/008 , G11B5/09 , G11B15/02 , G11B15/07 , G11B15/087 , G11B15/12 , G11B15/18 , G11B15/467 , G11B15/473 , G11B15/52 , G11B15/60 , G11B20/00 , G11B20/10 , G11B27/00 , G11B27/032 , G11B27/11 , G11B27/28 , H03M7/30 , H03M13/00 , H04N5/7826 , H04N5/783 , H04N5/92 , H04N5/926 , H04N5/945 , H04N9/79 , G11B21/04
CPC分类号： G11B27/11 , G11B15/02 , G11B15/07 , G11B15/087 , G11B15/125 , G11B15/1875 , G11B15/4671 , G11B15/4673 , G11B20/00007 , G11B20/10 , G11B20/10527 , G11B27/005 , G11B27/032 , G11B5/0086 , G11B5/09 , H03M13/00 , H03M7/30 , H04N5/78263 , H04N5/783 , H04N5/9205 , H04N9/7921 , G11B15/4731 , G11B15/52 , G11B15/602 , G11B2020/10592 , G11B2020/10981 , G11B2220/90 , G11B27/28 , H04N5/9201 , H04N5/9261 , H04N5/9267 , H04N5/945
摘要： A plurality of digital signals having total data rates of n bit/s or less are input to a digital recording device recording digital signals having a data rate of n bit/s. The digital signals are subjected to format-conversion for the digital recording device to be recorded therein. Furthermore, signals having a data rate of n/i.sub.1 bit/s or less are subjected to format-conversion to be recorded i.sub.1 times in the digital recording device. In the case where the data rate of the digital signals to be input is n/j bit/s, the digital signals are subjected to format-conversion so that the amount of data capable of being recorded per unit time is decreased by i/j; thus, the digital signals are recorded for a long period of time under the condition that the data recording time is prolonged j times. Furthermore, when input data to be recorded on a magnetic tape at a normal data rate by using a magnetic head mounted on a rotary cylinder is recorded, the recording device of the present invention makes it possible to select a plurality of types of track angles generated by the rotation number of the cylinder, the tape traveling speed, and the like.
摘要翻译：将具有n位/秒以下的总数据速率的多个数字信号输入到记录数据速率为n位/秒的数字信号的数字记录装置。对数字信号进行数字记录装置的格式转换以被记录在其中。此外，数据速率为n / i1比特/秒以下的信号经过格式转换以在数字记录装置中被记录为i1次。在要输入的数字信号的数据速率为n / j比特/秒的情况下，对数字信号进行格式转换，使得每单位时间能够记录的数据量减少i / j ; 因此，在数据记录时间延长j次的条件下，数字信号被长时间记录。此外，当记录通过使用安装在旋转磁盘上的磁头以正常数据速率记录在磁带上的输入数据时，本发明的记录装置使得可以选择产生的多种类型的磁道角度通过圆筒的转数，带的行进速度等。

17. 发明授权

US5371540A Digital-signal-processing camera 失效
标题翻译：数字信号处理相机
公开(公告)号：US5371540A
公开(公告)日：1994-12-06
申请号：US133786
申请日：1993-10-08
申请人： Akihiro Tamura , Atsushi Morimura , Yoshinori Kitamura
发明人： Akihiro Tamura , Atsushi Morimura , Yoshinori Kitamura
IPC分类号： H04N5/067 , H04N5/77 , H04N5/91 , H04N5/14
CPC分类号： H04N5/0675 , H04N5/77 , H04N5/91 , Y10S348/914
摘要： In the present invention, a drive circuit 12 drives a solid-state image-pickup element 11 in synchronism with a synchronizing signal generated by a synchronizing signal generation circuit 13, and the solid-state image-pickup element 11 issues an output signal prior to an end time of a horizontal blanking period by a time period T.sub.A. This output signal is processed in a digital signal processing circuit 14 and is issued as a picture signal. At that time, the picture signal is delayed from the synchronizing signal by a time period (T.sub.B -T.sub.A) owing to the signal processing, whereas the synchronizing signal is delayed by a delay circuit 15, in which a delay time made by subtracting a time period T.sub.A from a delay time T.sub.B of the digital signal processing circuit 14 is given, and can be issued in a proper timing for a picture signal output of the digital signal processing circuit 14. Further, by incorporating the delay circuit 15 in an LSI which constitutes the digital signal processing circuit 14, a circuit-construction can be minimized and a disturbance, which is given to the picture signal by the synchronizing signal, can be remarkably eliminated.
摘要翻译：在本发明中，驱动电路12与由同步信号发生电路13产生的同步信号同步地驱动固态摄像元件11，并且固态摄像元件11在水平消隐期的结束时间为时间段TA。该输出信号在数字信号处理电路14中进行处理，作为图像信号发出。此时，由于信号处理，图像信号从同步信号延迟一段时间（TB-TA），而同步信号被延迟电路15延迟，其中通过减去时间给出了数字信号处理电路14的延迟时间TB的周期TA，并且可以在数字信号处理电路14的图像信号输出的适当定时发出。另外，通过将延迟电路15并入LSI 构成数字信号处理电路14，可以最小化电路结构，并且可以显着地消除由同步信号给予图像信号的干扰。

18. 发明申请

US20100072210A1 CAP, MULTI-LAYERED PANEL, AND REFRIGERATED CONTAINER 审中-公开
标题翻译： CAP，多层面板和制冷容器
公开(公告)号：US20100072210A1
公开(公告)日：2010-03-25
申请号：US12312923
申请日：2007-10-31
申请人： Makoto Ikemiya , Yoshinori Kitamura , Shouzou Kameyama
发明人： Makoto Ikemiya , Yoshinori Kitamura , Shouzou Kameyama
IPC分类号： B65D81/38 , B65D88/74 , B65D90/02 , F16B37/14 , B32B3/24 , B23P11/00
CPC分类号： F25D23/067 , B29C44/1261 , F16B37/122 , F25D2201/126 , Y10T29/49826 , Y10T428/24322
摘要： A multi-layered panel wherein an interlayer material in a fluid state or in a solidified state transformed therefrom is provided between a pair of panels, comprises an internally-threaded member fitted in a through-hole formed in an outer one of the panels, and a cap capped on the internally-threaded member. The cap has a bottomed tubular-shaped body portion adapted to be brought into close contact with an outer peripheral surface of the internally-threaded member while sealing a threaded hole of the internally-threaded member, and a panel-contact contributing portion supported by the body portion, and adapted to be, at least partly, closely contactable with the outer panel.
摘要翻译：一种多层面板，其中在一对面板之间设置有流体状态或固化状态的中间层材料，其包括装配在形成在所述面板的外侧的通孔中的内螺纹构件，以及一个盖在内螺纹构件上的盖子。盖具有有底的管状主体部分，其适于在密封内螺纹构件的螺纹孔的同时与内螺纹构件的外周表面紧密接触，并且面板接触作用部分由主体部分，并且适于至少部分地与外板紧密接触。

19. 发明申请

US20080251883A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080251883A1
公开(公告)日：2008-10-16
申请号：US12142869
申请日：2008-06-20
申请人： Yoshinori KITAMURA , Koichi Matsuno , Kazunori Nishikawa
发明人： Yoshinori KITAMURA , Koichi Matsuno , Kazunori Nishikawa
IPC分类号： H01L29/00
CPC分类号： H01L29/7881 , H01L21/76224 , H01L27/105 , H01L27/11526 , H01L27/11541 , H01L29/66825
摘要： A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element isolation trenches having larger opening widths than the first opening widths, element isolation insulating films buried in the first element isolation trenches so that upper parts of the trenches have partial openings, respectively and buried in the second element isolation trenches respectively, and coating type oxide films formed so as to fill the openings of the first element isolation trenches, respectively.
摘要翻译：一种半导体器件包括形成有多个具有第一开口宽度的第一元件隔离沟槽和具有比第一开口宽度更大的开口宽度的多个第二元件隔离沟槽的半导体衬底，埋在第一元件隔离沟槽中的元件隔离绝缘膜使得沟槽的上部分别具有部分开口并分别埋在第二元件隔离沟槽中，并且分别形成为填充第一元件隔离沟槽的开口的涂覆型氧化物膜。

20. 发明申请

US20080206976A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080206976A1
公开(公告)日：2008-08-28
申请号：US12106088
申请日：2008-04-18
申请人： Yoshinori KITAMURA , Shigeki SUGIMOTO
发明人： Yoshinori KITAMURA , Shigeki SUGIMOTO
IPC分类号： H01L21/28
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
摘要翻译：公开了一种半导体器件，包括半导体衬底，该半导体衬底包括由隔离沟槽分隔开的第一和第二元件形成区域，形成在第一和第二元件形成区域上的第一和第二下部栅极绝缘膜，形成在第一和第二元件形成区域上的第一和第二浮置栅极和第二下栅极绝缘膜，隔离绝缘膜，至少形成在所述隔离沟槽中，并且在其上表面上形成有凹部，形成在所述第一和第二浮栅上的上栅极绝缘膜，以及控制栅极线，与第一和第二浮动栅极相对的相对部分，其中上部栅极绝缘膜被插入，并且位于凹部内部的部分，第一浮动栅极包括与第二浮动栅极相对的侧表面，并且与包括的侧表面完全对准在第一元件形成区域中并由隔离沟槽限定。

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