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11. 发明授权

US06562677B1 Capacitance element and method of manufacturing the same 有权
标题翻译：电容元件及其制造方法
公开(公告)号：US06562677B1
公开(公告)日：2003-05-13
申请号：US09689840
申请日：2000-10-13
申请人： Takumi Mikawa , Yuji Judai , Yoshihisa Nagano
发明人： Takumi Mikawa , Yuji Judai , Yoshihisa Nagano
IPC分类号： H01L218242
CPC分类号： H01L28/55 , H01L28/60 , Y10S438/957
摘要： On a substrate, there are provided a lower electrode, a capacitance insulating film, a passivation insulating film, and a first partial film of an upper electrode to be filled in a second aperture (capacitance determining aperture) formed in the passivation insulating film. The lower electrode, the capacitance insulating film, and the first partial film constitute a capacitance element. The upper electrode has the first partial film which is in contact with the capacitance insulating film and a second partial film which is not in contact with the capacitance insulating film. Since a second electrode wire consisting of a lower-layer film composed of titanium and an upper-layer film composed of an aluminum alloy film is in contact with the second partial film distinct from the first partial film of the upper electrode, titanium or the like encroaching from the second electrode wire can be prevented from diffusing into the capacitance insulating film.
摘要翻译：在基板上，设置有被填充在形成在钝化绝缘膜中的第二孔（电容确定孔）中的下电极，电容绝缘膜，钝化绝缘膜和上电极的第一部分膜。下电极，电容绝缘膜和第一部分膜构成电容元件。上电极具有与电容绝缘膜接触的第一部分膜和不与电容绝缘膜接触的第二部分膜。由于由钛构成的下层膜和由铝合金膜构成的上层膜构成的第2电极线与上部电极的第1部分膜不同的第2部分膜接触，钛等可以防止从第二电极线的侵入扩散到电容绝缘膜。

12. 发明授权

US06528327B2 Method for fabricating semiconductor memory device having a capacitor 失效
标题翻译：具有电容器的半导体存储器件的制造方法
公开(公告)号：US06528327B2
公开(公告)日：2003-03-04
申请号：US09922782
申请日：2001-08-07
申请人： Yoshihisa Nagano , Toru Nasu , Hajime Yasuoka , Eiji Fujii
发明人： Yoshihisa Nagano , Toru Nasu , Hajime Yasuoka , Eiji Fujii
IPC分类号： H01L218242
CPC分类号： H01L28/87 , H01L28/60 , H01L28/91
摘要： A contact plug is formed in a contact hole, which has been formed through a passivation film on a substrate, so that a recess is left over the contact plug. Then, the passivation film is dry-etched so that the opening of the recess is expanded or that the depth of the recess is reduced. After that, lower electrode, which will be connected to the contact plug, capacitive insulating film of an insulating metal oxide and upper electrode are formed in this order to make a capacitor.
摘要翻译：在通过基板上的钝化膜形成的接触孔中形成接触塞，使得凹部留在接触插塞上。然后，钝化膜被干蚀刻，使得凹部的开口膨胀或凹陷的深度减小。之后，依次形成与触点插头连接的下部电极，绝缘金属氧化物的电容绝缘膜和上部电极，制成电容器。

13. 发明授权

US06294438B1 Semiconductor device having capacitor and manufacturing method thereof 失效
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US06294438B1
公开(公告)日：2001-09-25
申请号：US09589520
申请日：2000-06-08
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

14. 发明授权

US06232131B1 Method for manufacturing semiconductor device with ferroelectric capacitors including multiple annealing steps 失效
标题翻译：用于制造具有多个退火步骤的铁电电容器的半导体器件的方法
公开(公告)号：US06232131B1
公开(公告)日：2001-05-15
申请号：US09103961
申请日：1998-06-24
申请人： Yoshihisa Nagano , Eiji Fujii , Yasuhiro Uemoto
发明人： Yoshihisa Nagano , Eiji Fujii , Yasuhiro Uemoto
IPC分类号： H01L218242
CPC分类号： H01L28/55
摘要： The method for manufacturing a semiconductor device of this invention comprises the steps: forming a first wiring layer on a semiconductor substrate on which a capacitor element with a capacitor dielectric film is formed, and the capacitor dielectric film is at least one film selected from the group consisting of a capacitor dielectric film with high dielectric constant and a ferroelectric film; conducting a first annealing to said semiconductor substrate; forming a second wiring layer on said first wiring layer; etching selectively the first wiring layer and the second wiring layer; and conducting a second annealing to the semiconductor substrate, so that the stress provided to the capacitor element can be reduced by annealing after forming each wiring layer, and thus, it can prevent the increase of leakage current and deterioration of dielectric breakdown voltage of the capacitor element having a capacitor dielectric film comprising a high capacitor dielectric film and a ferroelectric film.
摘要翻译：本发明的半导体装置的制造方法包括以下步骤：在形成有电容器电介质膜的电容器元件的半导体基板上形成第一布线层，并且所述电容器电介质膜为选自所述第一布线层由具有高介电常数的电容器电介质膜和铁电体膜组成; 对所述半导体衬底进行第一退火; 在所述第一布线层上形成第二布线层; 选择性地蚀刻第一布线层和第二布线层; 并且对半导体衬底进行第二次退火，从而可以在形成每个布线层之后通过退火来减小提供给电容器元件的应力，从而可以防止漏电流的增加和电容器的介质击穿电压的劣化具有包括高电容电介质膜和铁电体膜的电容器电介质膜的元件。

15. 发明授权

US06204111B1 Fabrication method of capacitor for integrated circuit 失效
标题翻译：集成电路电容器的制作方法
公开(公告)号：US06204111B1
公开(公告)日：2001-03-20
申请号：US09238157
申请日：1999-01-28
申请人： Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
发明人： Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L28/40 , H01L28/56
摘要： A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
摘要翻译：一种用于制造用于集成电路的电容器的方法，包括以下步骤：在衬底上形成用于粘附层的钛膜，通过在离子注入氧离子之后将钛膜退火形成用于扩散阻挡层的二氧化钛膜钛膜的表面区域，以将表面区域中的钛变为二氧化钛，并在二氧化钛膜上形成高介电常数电容器。

16. 发明授权

US6107657A Semiconductor device having capacitor and manufacturing method thereof 失效
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US6107657A
公开(公告)日：2000-08-22
申请号：US71121
申请日：1998-05-04
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L29/72
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

17. 发明授权

US5837591A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5837591A
公开(公告)日：1998-11-17
申请号：US803144
申请日：1997-02-19
申请人： Yasuhiro Shimada , Atsuo Inoue , Koji Arita , Toru Nasu , Yoshihisa Nagano , Akihiro Matsuda
发明人： Yasuhiro Shimada , Atsuo Inoue , Koji Arita , Toru Nasu , Yoshihisa Nagano , Akihiro Matsuda
IPC分类号： H01L21/28 , H01L21/02 , H01L21/822 , H01L27/04 , H01L27/10 , H01L27/115 , H01L21/20
CPC分类号： H01L27/11502 , H01L28/40
摘要： A semiconductor device comprises silicon substrate 1 on which an integrated circuit is formed, first insulating layer 6 formed on silicon substrate 1, a capacitor comprising lower electrode 7 formed on first insulating layer 6, dielectric film 8 having a high dielectric constant and upper electrode 9, a second insulating film 11 having contact holes 13 which lead to lower electrode 7 and upper electrode 9 independently, diffusion barrier layer 17 which touches lower electrode 7 and upper electrode 9 at bottom of contact holes 13, and interconnection layer 15 formed on diffusion barrier layer 17. In diffusion barrier layer 17 at the bottom of contact hole 13, a lamellar region made of granular crystal is formed.
摘要翻译：半导体器件包括其上形成有集成电路的硅衬底1，形成在硅衬底1上的第一绝缘层6，包括形成在第一绝缘层6上的下电极7的电容器，具有高介电常数的电介质膜8和上电极9 具有独立地引导到下电极7和上电极9的接触孔13的第二绝缘膜11，在接触孔13的底部接触下电极7和上电极9的扩散阻挡层17和形成在扩散阻挡层上的互连层15 在接触孔13的底部的扩散阻挡层17中，形成由粒状晶体构成的层状区域。

18. 发明授权

US5591663A Method of manufacturing ferroelectric capacitor with a hydrogen heat treatment 失效
标题翻译：用氢热处理制造铁电电容器的方法
公开(公告)号：US5591663A
公开(公告)日：1997-01-07
申请号：US388502
申请日：1995-02-14
申请人： Toru Nasu , Atsuo Inoue , Yoshihisa Nagano , Akihiro Matsuda , Koji Arita
发明人： Toru Nasu , Atsuo Inoue , Yoshihisa Nagano , Akihiro Matsuda , Koji Arita
IPC分类号： H01L23/522 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115
CPC分类号： H01L27/11502
摘要： A manufacturing method of a semiconductor device comprises the steps:(a) forming a ferroelectric capacitor on a semiconductor substrate on which a MOS transistor is formed, (b) forming an interlayer insulating film which covers the whole semiconductor substrate, (c) forming first contact holes which reach diffusion layers of the MOS transistor, (d) after forming the first contact holes, providing a heat treatment in hydrogen atmosphere, (e) after the heat treatment, forming second contact holes which reach upper and lower electrodes of the ferroelectric capacitor on the interlayer insulating film, and (f) forming metal interconnection. Since the heat treatment in hydrogen atmosphere is provided before forming the second contact holes, a surface state density at interface between the semiconductor and a gate insulating film of the MOS transistor can be lowered without degrading the characteristics of ferroelectric capacitor.
摘要翻译：半导体器件的制造方法包括以下步骤：（a）在形成有MOS晶体管的半导体衬底上形成强电介质电容器，（b）形成覆盖整个半导体衬底的层间绝缘膜，（c）接触孔到达MOS晶体管的扩散层，（d）在形成第一接触孔之后，在氢气氛中进行热处理，（e）在热处理之后，形成到铁电体的上下电极的第二接触孔层间绝缘膜上的电容器，（f）形成金属互连。由于在形成第二接触孔之前提供氢气氛中的热处理，所以可以降低MOS晶体管的半导体与栅极绝缘膜之间的界面处的表面状态密度，而不降低铁电电容器的特性。

19. 发明授权

US07531863B2 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US07531863B2
公开(公告)日：2009-05-12
申请号：US11270615
申请日：2005-11-10
申请人： Yoshihisa Nagano , Yasuhiro Uemoto
发明人： Yoshihisa Nagano , Yasuhiro Uemoto
IPC分类号： H01L27/108
CPC分类号： H01L27/10894 , H01L27/10852 , H01L27/11507 , H01L27/11509 , H01L28/55
摘要： A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.

20. 发明申请

US20050167725A1 Capacitor element and method for fabricating the same 有权
标题翻译：电容元件及其制造方法
公开(公告)号：US20050167725A1
公开(公告)日：2005-08-04
申请号：US11035175
申请日：2005-01-14
申请人： Yoshihisa Nagano , Takumi Mikawa
发明人： Yoshihisa Nagano , Takumi Mikawa
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8239 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/00
CPC分类号： H01L28/65 , H01L27/10852 , H01L28/57 , H01L28/75
摘要： A capacitor element is provided which is composed of a lower electrode, an upper electrode formed in opposing relation to the lower electrode, and a capacitor dielectric film made of a ferroelectric material or a high dielectric material and formed between the lower and upper electrodes. The lower electrode, the capacitor dielectric film, and the upper electrode are formed in a region extending at least from within a hole provided in an interlayer insulating film having a first hydrogen barrier film disposed on the upper surface thereof toward a position above the hole. A second hydrogen barrier film in contact with the first hydrogen barrier film is disposed to cover the upper surface of the upper electrode and the side surface of the portion of the upper electrode which has been formed above the hole.
摘要翻译：提供一种电容器元件，其由下电极，与下电极相对形成的上电极和由电介质材料或高电介质材料制成并形成在下电极和上电极之间的电容器电介质膜组成。下电极，电容器电介质膜和上电极形成在至少从设置在其上表面上的第一氢阻挡膜朝向孔上方的位置的层间绝缘膜的孔内延伸的区域中。与第一氢阻挡膜接触的第二氢阻挡膜设置成覆盖上电极的上表面和形成在孔上方的上电极部分的侧表面。

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