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11. 发明申请

US20100323504A1 LASER IRRADIATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：激光辐照装置及制造半导体器件的方法
公开(公告)号：US20100323504A1
公开(公告)日：2010-12-23
申请号：US12852636
申请日：2010-08-09
申请人： Koichiro TANAKA , Yoshiaki YAMAMOTO
发明人： Koichiro TANAKA , Yoshiaki YAMAMOTO
IPC分类号： H01L21/20 , H01L21/26
CPC分类号： H01L21/02683 , B23K26/0738 , B23K26/082 , B23K26/0821 , B23K26/0853 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L27/3244 , H01L27/3295 , H01L51/5253
摘要： It is an object of the present invention to provide a laser irradiation apparatus being able to irradiate the irradiation object with the laser beam having homogeneous energy density without complicating the optical system. The laser irradiation apparatus of the present invention comprises a laser oscillator, an optical system for scanning repeatedly a beam spot of the laser beam emitted from the laser oscillator in a uniaxial direction over the surface of the irradiation object, and a position controlling means for moving the position of the irradiation object relative to the laser beam in a direction perpendicular to the uniaxial direction.
摘要翻译：本发明的目的是提供一种激光照射装置，其能够用具有均匀能量密度的激光束照射照射物体，而不会使光学系统复杂化。本发明的激光照射装置包括激光振荡器，用于在照射物体的表面上沿单轴方向重复扫描从激光振荡器发射的激光束的光点的光学系统，以及用于移动的位置控制装置照射对象相对于激光束在垂直于单轴方向的方向上的位置。

12. 发明授权

US07790533B2 Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07790533B2
公开(公告)日：2010-09-07
申请号：US10582614
申请日：2005-06-15
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02675 , B23K26/0604 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , H01L21/02678 , H01L21/2026 , H01L21/268 , H01L27/12 , H01L27/1285 , H01L29/78675 , H01S3/2383
摘要： The present invention is to provide a technique that can increase productivity with high output power by combining a plurality of laser beams on an irradiation surface without any difficulties in optical alignment. According to this technique, laser beams having different wavelengths are combined using a plurality of laser oscillators and a dichroic mirror, or additionally a polarizer. For example, a first laser beam emitted from a first laser oscillator is combined with a second laser beam emitted from a second laser oscillator having different wavelength from the first laser beam in such a way that the first laser beam passes through a dichroic mirror and the second laser beam is reflected on the dichroic mirror, and the combined laser beam is projected to an irradiation surface.
摘要翻译：本发明是提供一种通过在照射面上组合多个激光束而能够以高输出功率提高生产率的技术，而不会使光取向困难。根据该技术，使用多个激光振荡器和分色镜或另外的偏振器来组合具有不同波长的激光束。例如，从第一激光振荡器发射的第一激光束与从第一激光束具有不同波长的第二激光振荡器发射的第二激光束组合，使得第一激光束通过二向色镜，并且第二激光束在分色镜上反射，并且将组合的激光束投射到照射表面。

13. 发明申请

US20100207040A1 LIGHT EXPOSURE APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：使用其的半导体器件的曝光装置和制造方法
公开(公告)号：US20100207040A1
公开(公告)日：2010-08-19
申请号：US12757063
申请日：2010-04-09
申请人： Koichiro TANAKA , Yoshiaki YAMAMOTO
发明人： Koichiro TANAKA , Yoshiaki YAMAMOTO
IPC分类号： G21G5/00
CPC分类号： H01L21/02675 , G03F7/70383 , H01L21/2026 , H01L21/268 , H01L27/1266 , H01L27/1285 , Y10T29/41
摘要： When annealing of a semiconductor film is conducted using a plurality of lasers, each of the distances between laser irradiation regions is different. When a lithography step is conducted in accordance with a marker which is formed over a substrate in advance after the step, light-exposure is not correctly conducted to a portion crystallized by laser. By using a laser irradiation region obtained on a laser irradiation step as a marker, light-exposure is conducted by making a light-exposure position of a stepper coincide with a large grain size region in the laser irradiation region. A large grain size region and a poorly crystalline region are detected by utilizing a thing that scattering intensity of light is different between the large grain size region and the poorly crystalline region, thereby determining a light-exposure position.
摘要翻译：当使用多个激光器进行半导体膜的退火时，激光照射区域之间的距离各不相同。当根据在步骤之后预先在衬底上形成的标记进行光刻步骤时，曝光不能正确地传导到通过激光结晶的部分。通过使用在激光照射步骤中获得的激光照射区域作为标记，通过使激光照射区域中的步进曝光位置与大粒径区域重合来进行曝光。通过利用在大晶粒尺寸区域和不良结晶区域之间的散射光强度不同的物质来检测大晶粒尺寸区域和不良结晶区域，从而确定曝光位置。

14. 发明授权

US07704765B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07704765B2
公开(公告)日：2010-04-27
申请号：US11889110
申请日：2007-08-09
申请人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
发明人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/6835 , H01L2221/68368 , H01L2224/83 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，该半导体器件的制造方法能够在半导体元件完成之前相位保持剥离层从基板剥离并快速剥离半导体元件。由于衬底和剥离层之间的热膨胀系数的差异，或者由于剥离层的体积减小，由于将剥离层施加到剥离层上，因此认为剥离层倾向于剥离，因此通过热处理使剥离层结晶而施加应力。因此，根据本发明的一个特征，通过在形成剥离层之前形成用于缓解基板和剥离层之间的剥离层上的应力的绝缘膜（缓冲膜），增强了基板和剥离层的粘附性在基板上。

15. 发明授权

US07615424B2 Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus 有权
标题翻译：激光照射装置及使用该激光照射装置的半导体装置的制造方法
公开(公告)号：US07615424B2
公开(公告)日：2009-11-10
申请号：US11087843
申请日：2005-03-24
申请人： Koichiro Tanaka , Yoshiaki Yamamoto , Nami Kosaka
发明人： Koichiro Tanaka , Yoshiaki Yamamoto , Nami Kosaka
IPC分类号： H01L21/00 , H01L21/84 , H01L31/036
CPC分类号： B23K26/04 , B23K26/0736 , B23K26/0853 , G02B27/0944 , H01L27/3244
摘要： An object of the present invention is to provide a laser irradiation method being able to control the irradiation position of the laser beam accurately compared with the conventional irradiation method. Another object of the present invention is to provide a method for manufacturing a semiconductor device with the use of the laser irradiation method being able to irradiate a large substrate accurately with the laser beam.The irradiation position of the laser beam is controlled by using a laser oscillator emitting a laser beam, an optical system for shaping the laser beam into rectangular on the irradiation object, means for moving the irradiation object relative to the laser beam in the long-side direction and the short-side direction of the beam spot, means for moving the irradiation object more slowly in the long-side direction than in the short-side direction, and a laser positioning mechanism.
摘要翻译：本发明的目的是提供一种能够与传统的照射方法相比准确地控制激光束的照射位置的激光照射方法。本发明的另一个目的是提供一种使用激光照射方法制造半导体器件的方法，该方法能够用激光束精确地照射大的衬底。激光束的照射位置通过使用发射激光束的激光振荡器，用于将激光束成形为照射对象上的矩形的光学系统来控制，用于使照射对象相对于激光束在长边移动的装置光束点的方向和短边方向，用于使照射物体在长边方向上比在短边方向上更慢地移动的装置，以及激光定位机构。

16. 发明授权

US07585791B2 Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07585791B2
公开(公告)日：2009-09-08
申请号：US10584729
申请日：2005-10-18
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , C30B13/00
CPC分类号： H01L21/02683 , B23K26/0736 , B23K26/0738 , B23K26/0853 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1255 , H01L27/1266 , H01L27/1285 , H01L27/1296 , H01L29/78621 , H01L29/78648 , Y10T117/1076
摘要： In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According to the present invention, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate. A laser oscillator having a high output power can be used for laser annealing, since a non linear optical element is not used and thus light is not converted to a harmonic. Therefore, the width of a region having large grain crystals that is formed by scanning once can be increased, and thus the productivity can be enhanced dramatically.
摘要翻译：在使用CW激光或准CW激光进行激光退火时，与准分子激光相比，生产率不高，因此有必要进一步提高生产率。根据本发明，使用基波而不将激光投射到非线性光学元件中，并且通过用具有高重复率的脉冲激光照射半导体薄膜来进行激光退火。具有高输出功率的激光振荡器可用于激光退火，因为不使用非线性光学元件，因此光不转换成谐波。因此，可以增加通过扫描一次形成的具有大晶粒的区域的宽度，从而可以显着提高生产率。

17. 发明授权

US07566669B2 Laser irradiation apparatus and laser irradiation method 有权
标题翻译：激光照射装置和激光照射方法
公开(公告)号：US07566669B2
公开(公告)日：2009-07-28
申请号：US10584472
申请日：2005-06-15
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , C30B1/00 , B23K26/00
CPC分类号： H01L21/02691 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L27/1285
摘要： It is an object of the present invention to provide a laser irradiation apparatus which can manufacture a homogenously crystallized film by varying the energy intensity of an irradiation beam in forward and backward directions of the irradiation. A laser irradiation apparatus of the present invention comprises a laser oscillator and means for varying beam intensity wherein a laser beam is obliquely incident into the irradiation surface, the laser beam is scanned relative to the irradiation surface, and the beam intensity is varied in accordance with the scanning direction. Further, the laser oscillator is a continuous wave solid-state laser, gas laser, or metal laser. A pulsed laser having a repetition frequency of 10 MHz or more can also be used.
摘要翻译：本发明的目的是提供一种能够通过改变照射光束在照射的前后方向上的能量强度来制造均质结晶膜的激光照射装置。本发明的激光照射装置包括激光振荡器和用于改变光束强度的装置，其中激光束倾斜地入射到照射表面中，激光束相对于照射表面被扫描，并且光束强度根据扫描方向。此外，激光振荡器是连续波固体激光器，气体激光器或金属激光器。也可以使用重复频率为10MHz以上的脉冲激光。

18. 发明授权

US07560749B2 Light emitting material, light emitting device, and electronic device 失效
标题翻译：发光材料，发光装置和电子装置
公开(公告)号：US07560749B2
公开(公告)日：2009-07-14
申请号：US11625114
申请日：2007-01-19
申请人： Junichiro Sakata , Takahiro Kawakami , Yoshiaki Yamamoto , Miki Katayama , Kohei Yokoyama
发明人： Junichiro Sakata , Takahiro Kawakami , Yoshiaki Yamamoto , Miki Katayama , Kohei Yokoyama
IPC分类号： H01J1/62
CPC分类号： C09K11/565 , C09K11/54 , C09K11/567 , C09K11/621 , C09K11/7701 , C09K11/883 , H05B33/14
摘要： An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to provide a light emitting device and an electronic device which can be manufactured at low cost. Provided is a light emitting element including a base material, a first impurity element, a second impurity element, and a third impurity element. The base material is one of ZnS, CdS, CaS, Y2S3, Ga2S3, SrS, BaS, ZnO, Y2O3, AlN, GaN, InN, ZnSe, ZnTe, and SrGa2S4; the first impurity element is any of Cu, Ag, Au, Pt, and Si; the second impurity element is any of F, Cl, Br, I, B, Al, Ga, In, and Tl; and the third impurity element is any of Li, Na, K, Rb, Cs, N, P, As, Sb, and Bi.
摘要翻译：目的是提供一种新颖的发光材料。另一个目的是提供一种降低功耗的发光器件和电子器件。另一个目的是提供一种可以以低成本制造的发光器件和电子器件。提供了包括基材，第一杂质元素，第二杂质元素和第三杂质元素的发光元件。基体材料是ZnS，CdS，CaS，Y2S3，Ga2S3，SrS，BaS，ZnO，Y2O3，AlN，GaN，InN，ZnSe，ZnTe和SrGa2S4中的一种; 第一杂质元素是Cu，Ag，Au，Pt和Si中的任一种; 第二杂质元素是F，Cl，Br，I，B，Al，Ga，In和Tl中的任一种; 并且第三杂质元素是Li，Na，K，Rb，Cs，N，P，As，Sb和Bi中的任一种。

19. 发明申请

US20090137101A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US20090137101A1
公开(公告)日：2009-05-28
申请号：US12247470
申请日：2008-10-08
申请人： Shunpei YAMAZAKI , Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO
发明人： Shunpei YAMAZAKI , Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO
IPC分类号： H01L21/71
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： To provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like is used. The semiconductor layer is transferred to a supporting substrate by the steps of irradiating a semiconductor wafer with ions from one surface to form a damaged layer; forming an insulating layer over one surface of the semiconductor wafer; attaching one surface of the supporting substrate to the insulating layer formed over the semiconductor wafer and performing heat treatment to bond the supporting substrate to the semiconductor wafer; and performing separation at the damaged layer into the semiconductor wafer and the supporting substrate. The damaged layer remaining partially over the semiconductor layer is removed by wet etching and a surface of the semiconductor layer is irradiated with a laser beam.
摘要翻译：为了提供一种制造具有半导体层的SOI衬底的方法，即使使用诸如玻璃衬底等的耐热温度低的衬底也可以实际使用。通过以下步骤将半导体层转移到支撑衬底：从一个表面照射半导体晶片以形成损伤层; 在所述半导体晶片的一个表面上形成绝缘层; 将所述支撑基板的一个表面附接到形成在所述半导体晶片上的绝缘层，并进行热处理以将所述支撑基板接合到所述半导体晶片; 并且在所述损伤层处进行到所述半导体晶片和所述支撑基板的分离。通过湿蚀刻除去半导体层上部分残留的损伤层，并用激光束照射半导体层的表面。

20. 发明申请

US20090072343A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：半导体器件和电子器件
公开(公告)号：US20090072343A1
公开(公告)日：2009-03-19
申请号：US12207634
申请日：2008-09-10
申请人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
IPC分类号： H01L29/00
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L21/84 , H01L27/1214 , H01L29/4908 , H01L29/66772 , H01L29/78603 , H01L29/78654
摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.
摘要翻译：使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。而且，不用化学抛光而形成的高性能半导体器件。此外，使用该半导体器件的电子设备。包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为大于或等于1nm且小于或等于7nm。或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

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