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    • 14. 发明授权
    • Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method
    • 形成氧或氮封端的硅纳米晶体结构和通过该方法形成的氧或氮封端的硅纳米晶体结构的方法
    • US07589002B2
    • 2009-09-15
    • US12152944
    • 2008-05-19
    • Yoichiro NumasawaYukinobu Murao
    • Yoichiro NumasawaYukinobu Murao
    • H01L21/36H01L21/20
    • C23C16/24C23C16/56Y10S977/814
    • An oxygen- or nitrogen-terminated silicon nanocrystalline structure is formed on a silicon substrate by forming a silicon film of fine silicon crystals and amorphous silicon on a substrate, and oxidizing or nitriding the formed silicon film with ions and radicals formed from an oxidizing gas or a nitriding gas. The oxidizing or nitriding step comprises substeps of disposing the substrate provided with the silicon film in an oxidizing or nitriding gas atmosphere within a plasma treatment chamber, and then plasma-oxiziding or plasma-nitriding the substrate provided with the silicon film by applying a high frequency electric field to the oxidizing or nitriding gas atmosphere. The method allows the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals to be regulated to an accuracy of 1 to 2 nm, the density thereof per unit area to be increased, and the silicon nanocrystalline structure to be produced easily and inexpensively.
    • 在硅衬底上形成氧或氮封端的硅纳米晶体结构,通过在衬底上形成精细的硅晶体和非晶硅的硅膜,以及用氧化气体形成的离子和自由基对形成的硅膜进行氧化或氮化, 氮化气体。 氧化或氮化步骤包括将设置有硅膜的基板设置在等离子体处理室内的氧化或氮化气体气氛中的子步骤,然后通过施加高频率等离子体氧化或等离子体处理设置有硅膜的基板 电场对氧化或氮化气体的气氛。 该方法允许将氧或氮封端的硅纳米晶体的粒径调节至1〜2nm的精度,其每单位面积的密度增加,并且容易且廉价地制造硅纳米晶体结构。
    • 17. 发明申请
    • Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method
    • 形成氧或氮封端的硅纳米晶体结构和通过该方法形成的氧或氮封端的硅纳米晶体结构的方法
    • US20070262307A1
    • 2007-11-15
    • US11826476
    • 2007-07-16
    • Yoichiro NumasawaYukinobu Murao
    • Yoichiro NumasawaYukinobu Murao
    • H01L21/20H01L31/00
    • C23C16/24C23C16/56Y10S977/814
    • A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of nanometer scale thickness composed of fine silicon crystals and amorphous silicon on the substrate. Thereafter, application of the high-frequency electric field is terminated, then the inside of the plasma treatment chamber is replaced by an oxidizing or nitriding gas, and a high-frequency electric field is applied again for plasma oxidizing treatment or plasma nitriding treatment of the silicon film formed on the substrate. Thereby, a silicon nanocrystalline structure can be formed on a silicon substrate by using a process of producing silicon integrated circuits with achieving high luminous efficiency, and terminating reliably with oxygen or nitrogen on the surface thereof. According to the method of the present invention, the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals can be regulated in an accuracy of 1 to 2 nm, the density thereof per unit area can be increased, and the silicon nanocrystalline structure can be produced easily and inexpensively.
    • 在等离子体处理室中将衬底设定在预定温度,然后等离子体处理室的内部被调节至少包含氢化硅气体和氢气的减压,施加高频电场以形成 在衬底上由精细硅晶体和非晶硅组成的纳米级厚度的硅膜。 此后,终止施加高频电场,然后用氧化或氮化气体代替等离子体处理室的内部,再次施加高频电场进行等离子体氧化处理或等离子体氮化处理 硅膜形成在基板上。 因此,可以通过使用具有实现高发光效率的硅集成电路的制造工艺,在其表面上用氧气或氮气可靠地终止在硅衬底上形成硅纳米晶体结构。 根据本发明的方法,氧或氮封端的硅纳米晶体的粒径可以以1〜2nm的精度进行调节,每单位面积的密度可以增加,并且硅纳米晶体结构可以 可以轻松,低成本地生产。
    • 20. 发明授权
    • Sputter device
    • 溅射装置
    • US6083361A
    • 2000-07-04
    • US13288
    • 1998-01-26
    • Masahiko KobayashiYoichiro Numasawa
    • Masahiko KobayashiYoichiro Numasawa
    • C23C14/34C23C14/00C23C14/04C23C14/35C23C14/56H01J37/34H01L21/768
    • C23C14/345C23C14/0047C23C14/046C23C14/358C23C14/564H01J37/321H01J37/32633H01J37/3405H01L21/76877H01J2237/3327
    • A sputtering device includes a sputter chamber equipped with a vacuum pump system; a metal target provided inside the sputter chamber; a sputtering power source for producing a sputter discharge and sputtering the target to create sputter particles; a substrate holder for holding a substrate in the position where the sputter particles land; and a gas introduction device for introducing into the sputter chamber a reactive gas that reacts with the sputter particles released from the target, and produces a compound that has a lower sticking characteristic to a special region of the substrate than do the sputter particles alone, wherein the compound can be dissociated in another region of the substrate. A method of sputtering includes the steps of producing a sputter discharge with a sputtering power source for sputtering a metal target in a sputter chamber to create sputter particles; holding a substrate in a position where the sputter particles land; introducing into the sputter chamber a reactive gas that reacts with the sputter particles released from the target to produce a compound that has a lower sticking characteristic to a special region of the substrate than do the sputter particles alone; and dissociating the compound in another region of the substrate.
    • 溅射装置包括配有真空泵系统的溅射室; 设置在溅射室内的金属靶; 用于产生溅射放电并溅射靶以产生溅射颗粒的溅射电源; 用于将衬底保持在溅射颗粒着陆的位置的衬底保持器; 以及气体引入装置,用于将与从靶释放的溅射颗粒反应的反应性气体引入溅射室,并且产生与单独的溅射颗粒相比,具有比基板的特殊区域更低的粘附特性的化合物,其中 该化合物可在基片的另一区域中解离。 一种溅射方法包括以下步骤:利用用于在溅射室中溅射金属靶的溅射功率来产生溅射放电以产生溅射颗粒; 将基板保持在溅射颗粒着陆的位置; 向溅射室中引入反应性气体,其与从靶标释放的溅射颗粒发生反应,以产生与单独的溅射颗粒相比,具有比基板特殊区域更低的粘附特性的化合物; 并在化合物的另一个区域中解离该化合物。