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11. 发明授权

US6070552A Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US6070552A
公开(公告)日：2000-06-06
申请号：US022880
申请日：1998-02-12
申请人： Shigeru Mizuno , Masahito Ishihara , Yoichiro Numasawa , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Masahito Ishihara , Yoichiro Numasawa , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , C23C16/509 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/4412 , C23C16/455 , C23C16/45519 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32834 , H01J37/32862
摘要： A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.
摘要翻译：基板处理装置包括装备有基板保持器和面向基板保持器的气体供给电极的反应器，用于泵出反应器内部的泵机构，用于将反应气体通过气体供给电极引入的反应气体供给机构所述反应器的内部，用于向所述气体供给电极施加高频电力的高频电源，形成在所述反应器的侧壁中的连接端口，所述泵机构连接到形成在所述反应器的侧壁中的连接端口并且设置气体供给电极和衬底保持器之间的空间，使得气体供给电极和衬底保持器之间的电导低于反应器的侧壁和气体馈送电极之间的电导。

12. 发明授权

US5956616A Method of depositing thin films by plasma-enhanced chemical vapor deposition 失效
标题翻译：通过等离子体增强化学气相沉积法沉积薄膜的方法
公开(公告)号：US5956616A
公开(公告)日：1999-09-21
申请号：US863298
申请日：1997-05-27
申请人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
IPC分类号： C23C16/34 , C23C16/42 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556
摘要： A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.
摘要翻译：提供了通过等离子体增强CVD在衬底上沉积薄膜的方法。该方法包括将H2或H2和N2引入等离子体增强型CVD反应器中; 在反应器中产生等离子体; 将包含TiCl 4，硅烷，以及H 2或H 2和N 2的反应气体引入反应器中; 并在反应器中在衬底上沉积含有Si的Ti膜或TiN膜。

13. 发明授权

US09437768B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09437768B2
公开(公告)日：2016-09-06
申请号：US13615700
申请日：2012-09-14
申请人： Yoichiro Numasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
发明人： Yoichiro Numasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
IPC分类号： H01L31/044 , H01L31/072 , H01L31/0747 , H01L31/18 , H01L31/0312
CPC分类号： H01L31/072 , H01L31/0312 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.
摘要翻译：提供具有低电阻损耗和高转换效率的光电转换装置。光电转换装置包括在一对电极之间的第一硅半导体层和第二硅半导体层。第一硅半导体层设置在具有一种导电类型的结晶硅衬底的一个表面上，并且具有与晶体硅衬底相反的导电类型，并且第二硅半导体层设置在晶体硅衬底的另一个表面上并且具有与晶体硅衬底相同的导电类型。此外，第一硅半导体层和第二硅半导体层各自具有在膜厚度方向上变化的载流子浓度。

14. 发明授权

US07589002B2 Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method 失效
标题翻译：形成氧或氮封端的硅纳米晶体结构和通过该方法形成的氧或氮封端的硅纳米晶体结构的方法
公开(公告)号：US07589002B2
公开(公告)日：2009-09-15
申请号：US12152944
申请日：2008-05-19
申请人： Yoichiro Numasawa , Yukinobu Murao
发明人： Yoichiro Numasawa , Yukinobu Murao
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： C23C16/24 , C23C16/56 , Y10S977/814
摘要： An oxygen- or nitrogen-terminated silicon nanocrystalline structure is formed on a silicon substrate by forming a silicon film of fine silicon crystals and amorphous silicon on a substrate, and oxidizing or nitriding the formed silicon film with ions and radicals formed from an oxidizing gas or a nitriding gas. The oxidizing or nitriding step comprises substeps of disposing the substrate provided with the silicon film in an oxidizing or nitriding gas atmosphere within a plasma treatment chamber, and then plasma-oxiziding or plasma-nitriding the substrate provided with the silicon film by applying a high frequency electric field to the oxidizing or nitriding gas atmosphere. The method allows the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals to be regulated to an accuracy of 1 to 2 nm, the density thereof per unit area to be increased, and the silicon nanocrystalline structure to be produced easily and inexpensively.
摘要翻译：在硅衬底上形成氧或氮封端的硅纳米晶体结构，通过在衬底上形成精细的硅晶体和非晶硅的硅膜，以及用氧化气体形成的离子和自由基对形成的硅膜进行氧化或氮化，氮化气体。氧化或氮化步骤包括将设置有硅膜的基板设置在等离子体处理室内的氧化或氮化气体气氛中的子步骤，然后通过施加高频率等离子体氧化或等离子体处理设置有硅膜的基板电场对氧化或氮化气体的气氛。该方法允许将氧或氮封端的硅纳米晶体的粒径调节至1〜2nm的精度，其每单位面积的密度增加，并且容易且廉价地制造硅纳米晶体结构。

15. 发明授权

US07530359B2 Plasma treatment system and cleaning method of the same 有权
公开(公告)号：US07530359B2
公开(公告)日：2009-05-12
申请号：US10477457
申请日：2002-05-16
申请人： Yoichiro Numasawa , Yoshimi Watabe
发明人： Yoichiro Numasawa , Yoshimi Watabe
IPC分类号： B08B7/04 , B08B7/00
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/5096 , H01J37/32568 , Y02C20/30 , Y02P70/605 , Y10S438/905
摘要： A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32), while the bottom electrode on which a substrate (12) is loaded and is moved by a vertical movement mechanism. The plasma treatment system has a controller (36) which, at the time of a cleaning process after forming a film on the substrate (12), controls a vertical movement mechanism to move the bottom electrode to narrow the gap between the top electrode and bottom electrode and form a narrow space and starts cleaning by a predetermined high density plasma in that narrow space. In the cleaning process, step cleaning is performed. Due to this, the efficiency of utilization of the cleaning gas is increased, the amount of exhaust gas is cut, and the cleaning speed is raised. Further, the amount of the process gas used is cut and the process cost is reduced.

16. 发明申请

US20080296579A1 NANOSILICON SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR CIRCUIT DEVICE USING NANOSILICON SEMICONDUCTOR SUBSTRATE MANUFACTURED BY THE METHOD 有权
标题翻译：纳米硅半导体衬底制造方法和使用由该方法制造的纳米硅半导体衬底的半导体电路器件
公开(公告)号：US20080296579A1
公开(公告)日：2008-12-04
申请号：US12128465
申请日：2008-05-28
申请人： YUKINOBU MURAO , AKIRA KUMAGAI , YOICHIRO NUMASAWA
发明人： YUKINOBU MURAO , AKIRA KUMAGAI , YOICHIRO NUMASAWA
IPC分类号： H01L29/04 , H01L21/205
CPC分类号： H01L27/1203 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02579 , H01L21/02595 , H01L21/0262 , H01L21/28035 , H01L21/84 , H01L29/04 , H01L29/4925 , H01L29/66666 , H01L29/7827 , Y10S977/89 , Y10S977/936
摘要： This invention provides a substrate structure capable of controlling the threshold voltage of a MOS transistor independently of the substrate concentration and easily suppressing a short channel effect caused by reducing the channel length. A first nanosilicon film formed from nanosilicon grains having the same grain size is formed on a silicon oxide film on the surface of a silicon substrate. A silicon nitride film is formed on the first nanosilicon film. Then, a second nanosilicon film having an average grain size different from that of the first nanosilicon film is formed. A semiconductor circuit device is formed on a thus manufactured nanosilicon semiconductor substrate.
摘要翻译：本发明提供了一种能够独立于衬底浓度来控制MOS晶体管的阈值电压的衬底结构，并且容易抑制由通道长度减小引起的短沟道效应。在硅衬底的表面的氧化硅膜上形成由具有相同粒径的纳米硅粒子形成的第一纳米硅膜。在第一纳米硅膜上形成氮化硅膜。然后，形成平均粒径与第一纳米硅膜不同的第二纳米硅膜。在这样制造的纳米硅半导体衬底上形成半导体电路器件。

17. 发明申请

US20070262307A1 Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method 审中-公开
标题翻译：形成氧或氮封端的硅纳米晶体结构和通过该方法形成的氧或氮封端的硅纳米晶体结构的方法
公开(公告)号：US20070262307A1
公开(公告)日：2007-11-15
申请号：US11826476
申请日：2007-07-16
申请人： Yoichiro Numasawa , Yukinobu Murao
发明人： Yoichiro Numasawa , Yukinobu Murao
IPC分类号： H01L21/20 , H01L31/00
CPC分类号： C23C16/24 , C23C16/56 , Y10S977/814
摘要： A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of nanometer scale thickness composed of fine silicon crystals and amorphous silicon on the substrate. Thereafter, application of the high-frequency electric field is terminated, then the inside of the plasma treatment chamber is replaced by an oxidizing or nitriding gas, and a high-frequency electric field is applied again for plasma oxidizing treatment or plasma nitriding treatment of the silicon film formed on the substrate. Thereby, a silicon nanocrystalline structure can be formed on a silicon substrate by using a process of producing silicon integrated circuits with achieving high luminous efficiency, and terminating reliably with oxygen or nitrogen on the surface thereof. According to the method of the present invention, the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals can be regulated in an accuracy of 1 to 2 nm, the density thereof per unit area can be increased, and the silicon nanocrystalline structure can be produced easily and inexpensively.
摘要翻译：在等离子体处理室中将衬底设定在预定温度，然后等离子体处理室的内部被调节至少包含氢化硅气体和氢气的减压，施加高频电场以形成在衬底上由精细硅晶体和非晶硅组成的纳米级厚度的硅膜。此后，终止施加高频电场，然后用氧化或氮化气体代替等离子体处理室的内部，再次施加高频电场进行等离子体氧化处理或等离子体氮化处理硅膜形成在基板上。因此，可以通过使用具有实现高发光效率的硅集成电路的制造工艺，在其表面上用氧气或氮气可靠地终止在硅衬底上形成硅纳米晶体结构。根据本发明的方法，氧或氮封端的硅纳米晶体的粒径可以以1〜2nm的精度进行调节，每单位面积的密度可以增加，并且硅纳米晶体结构可以可以轻松，低成本地生产。

18. 发明申请

US20070086939A1 Apparatus and method for manufacturing halogen gas and halogen gas recovery and circulatory system 审中-公开
标题翻译：制造卤素气体和卤素气体回收和循环系统的设备和方法
公开(公告)号：US20070086939A1
公开(公告)日：2007-04-19
申请号：US11639155
申请日：2006-12-15
申请人： Yoichiro Numasawa , Tsutomu Tsukada
发明人： Yoichiro Numasawa , Tsutomu Tsukada
IPC分类号： C01B7/00 , B01J19/08
CPC分类号： H01J37/321 , B01J19/088 , B01J2219/0809 , B01J2219/0832 , B01J2219/0841 , B01J2219/0869 , B01J2219/0875 , B01J2219/0894 , C01B7/00 , C01B7/193 , H01J2237/022
摘要： The present invention provides a method and apparatus for manufacturing halogen gas using a plasma chemical reaction, with the features of having simplicity, practicality, and maintaining safety in handling source materials and of being able to manufacture halogen gas in the same facility where halogen gas is used, and also provides a halogen gas circulatory and recovery system capable of circulating and using halogen gas efficiently. After the gas expressed in the chemical formula AiXj (A represents metallic element or semiconductor element, X represents halogen element, and i and j represent integers) is introduced into a reaction container in vacuum, plasmas are generated in the reaction container to produce a plasma chemical reaction. Fine particles produced by the plasma chemical reaction and containing an element other than halogen element as the major constituent are removed from the reaction container so as to generate halogen gas in the reaction container.
摘要翻译：本发明提供了一种使用等离子体化学反应制造卤素气体的方法和装置，具有简单，实用和维护处理源材料的安全性以及能够在卤素气体相同设备中制造卤素气体的特征并且还提供能够有效地循环和使用卤素气体的卤素气体循环和回收系统。在化学式A中表示的气体（A表示金属元素或半导体元素，X表示卤素元素，i和j表示整数）被引入真空中的反应容器在反应容器中产生等离子体，产生等离子体化学反应。通过等离子体化学反应生成的含有卤素元素以外的元素作为主要成分的微粒从反应容器中除去，从而在反应容器中产生卤素气体。

19. 发明申请

US20050048796A1 Forming method and a forming apparatus of nanocrystalline silicon structure 有权
标题翻译：纳米晶硅结构的成型方法和成型装置
公开(公告)号：US20050048796A1
公开(公告)日：2005-03-03
申请号：US10927159
申请日：2004-08-27
申请人： Yoichiro Numasawa , Nobuyoshi Koshida
发明人： Yoichiro Numasawa , Nobuyoshi Koshida
IPC分类号： B82B3/00 , C01B33/02 , C23C16/02 , C23C16/24 , C23C16/56 , H01L21/00 , H01L21/205 , H01L21/316 , H01L21/318 , H01L21/322 , H01L29/06
CPC分类号： H01L21/02664 , B82Y30/00 , C23C16/02 , C23C16/24 , C23C16/56 , H01J37/321 , H01J2237/2001 , H01L21/0237 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/31662 , H01L21/3185
摘要： A forming method and a forming apparatus of nanocrystalline silicon structure makes it possible to prepare a nanocrystalline silicon structure at a low temperature to have densely packed silicon crystal grains which are stably terminated and to effectively control the grain size in nanometer scale. A forming method and a forming apparatus of nanocrystalline silicon structure with oxide or nitride termination, carry out a first step of treating a surface of a substrate with hydrogen radical; a second step of depositing silicon crystals having a grain size of 10 nm or less by the thermal reaction of a silicon-containing gas; and a third step of terminating the surface of the silicon crystal with oxygen or nitrogen by using one of oxygen gas, oxygen radical and nitrogen radical.
摘要翻译：纳米晶硅结构的形成方法和形成装置使得可以在低温下制备纳米晶体硅结构以具有稳定封端的密集堆积的硅晶粒并有效地控制纳米级的晶粒尺寸。具有氧化物或氮化物终止的纳米晶硅结构的形成方法和形成装置，进行用氢自由基处理衬底表面的第一步骤; 通过含硅气体的热反应沉积具有10nm或更小的晶粒尺寸的硅晶体的第二步骤; 以及通过使用氧气，氧自由基和氮自由基之一用氧或氮终止硅晶体的表面的第三步骤。

20. 发明授权

US6083361A Sputter device 失效
标题翻译：溅射装置
公开(公告)号：US6083361A
公开(公告)日：2000-07-04
申请号：US13288
申请日：1998-01-26
申请人： Masahiko Kobayashi , Yoichiro Numasawa
发明人： Masahiko Kobayashi , Yoichiro Numasawa
IPC分类号： C23C14/34 , C23C14/00 , C23C14/04 , C23C14/35 , C23C14/56 , H01J37/34 , H01L21/768
CPC分类号： C23C14/345 , C23C14/0047 , C23C14/046 , C23C14/358 , C23C14/564 , H01J37/321 , H01J37/32633 , H01J37/3405 , H01L21/76877 , H01J2237/3327
摘要： A sputtering device includes a sputter chamber equipped with a vacuum pump system; a metal target provided inside the sputter chamber; a sputtering power source for producing a sputter discharge and sputtering the target to create sputter particles; a substrate holder for holding a substrate in the position where the sputter particles land; and a gas introduction device for introducing into the sputter chamber a reactive gas that reacts with the sputter particles released from the target, and produces a compound that has a lower sticking characteristic to a special region of the substrate than do the sputter particles alone, wherein the compound can be dissociated in another region of the substrate. A method of sputtering includes the steps of producing a sputter discharge with a sputtering power source for sputtering a metal target in a sputter chamber to create sputter particles; holding a substrate in a position where the sputter particles land; introducing into the sputter chamber a reactive gas that reacts with the sputter particles released from the target to produce a compound that has a lower sticking characteristic to a special region of the substrate than do the sputter particles alone; and dissociating the compound in another region of the substrate.
摘要翻译：溅射装置包括配有真空泵系统的溅射室; 设置在溅射室内的金属靶; 用于产生溅射放电并溅射靶以产生溅射颗粒的溅射电源; 用于将衬底保持在溅射颗粒着陆的位置的衬底保持器; 以及气体引入装置，用于将与从靶释放的溅射颗粒反应的反应性气体引入溅射室，并且产生与单独的溅射颗粒相比，具有比基板的特殊区域更低的粘附特性的化合物，其中该化合物可在基片的另一区域中解离。一种溅射方法包括以下步骤：利用用于在溅射室中溅射金属靶的溅射功率来产生溅射放电以产生溅射颗粒; 将基板保持在溅射颗粒着陆的位置; 向溅射室中引入反应性气体，其与从靶标释放的溅射颗粒发生反应，以产生与单独的溅射颗粒相比，具有比基板特殊区域更低的粘附特性的化合物; 并在化合物的另一个区域中解离该化合物。

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