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11. 发明申请

US20070054434A1 METHODS OF FABRICATING AN IMAGE SENSOR 失效
标题翻译：制作图像传感器的方法
公开(公告)号：US20070054434A1
公开(公告)日：2007-03-08
申请号：US11464244
申请日：2006-08-14
申请人： Won-Je Park , Jae-Ho Song , Young-Hoon Park
发明人： Won-Je Park , Jae-Ho Song , Young-Hoon Park
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14643
摘要： Provided are methods of fabricating an image sensor. Embodiments of such methods can include forming a first gate insulation layer in a first region of a semiconductor substrate and a first gate electrode layer, to cover the first gate insulation layer and forming a second gate insulation layer within a nitrogen enhanced atmosphere and a second gate electrode layer in a second region of the semiconductor substrate. The methods also include patterning the first gate electrode layer and the first gate insulation layer of the first region to form a first gate pattern and patterning the second gate electrode layer and the second gate insulation layer of the second region to form a second gate pattern.
摘要翻译：提供制造图像传感器的方法。这种方法的实施例可以包括在半导体衬底的第一区域和第一栅极电极层中形成第一栅极绝缘层，以覆盖第一栅极绝缘层并在氮气增强气氛中形成第二栅极绝缘层和第二栅极在半导体衬底的第二区域中的电极层。所述方法还包括图案化第一区域的第一栅极电极层和第一栅极绝缘层以形成第一栅极图案，并且使第二栅极电极层和第二栅极绝缘层图案化以形成第二栅极图案。

12. 发明申请

US20060157761A1 Image sensor with self-boosting and methods of operating and fabricating the same 有权
标题翻译：具有自增强功能的图像传感器及其操作和制造方法
公开(公告)号：US20060157761A1
公开(公告)日：2006-07-20
申请号：US11335925
申请日：2006-01-18
申请人： Young-Hoon Park , Won-Je Park , Tae-Seok Oh , Jae-Ho Song
发明人： Young-Hoon Park , Won-Je Park , Tae-Seok Oh , Jae-Ho Song
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14632 , H01L27/14656 , H01L27/14687 , H04N5/3597 , H04N5/3745
摘要： Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.
摘要翻译：公开了包括各自具有传输晶体管和驱动晶体管的像素的图像传感器（例如，CMOS图像传感器），其中至少一个晶体管的栅极具有设置在其上的升压栅极，该升压栅极包括导电膜图案，插入绝缘膜。因此，施加到升压栅极的电压电容耦合到传输晶体管的传输栅极和驱动晶体管的驱动栅极中的至少一个。因此，转移栅极被提供有转印电压和升压栅极耦合电压的总和，并且不需要为图像传感器提供高电压发生器。如果将这样的耦合电压施加到驱动晶体管的驱动栅极，则可以增强动态动作范围。

13. 发明申请

US20090045321A1 Image sensor, method of manufacturing the same, and method of operating the same 有权
标题翻译：图像传感器，其制造方法及其操作方法
公开(公告)号：US20090045321A1
公开(公告)日：2009-02-19
申请号：US12010362
申请日：2008-01-24
申请人： Jeong-hoon Bae , Tae-seok Oh , Ki-hong Kim , Hyoun-min Baek , Won-je Park , Jung-ho Park
发明人： Jeong-hoon Bae , Tae-seok Oh , Ki-hong Kim , Hyoun-min Baek , Won-je Park , Jung-ho Park
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L27/14647 , H01L27/1463 , H01L27/14656 , H01L27/14689
摘要： An image sensor includes a photoelectric conversion section in a semiconductor substrate, the photoelectric conversion section having a capping layer of a first conductivity type and a photodiode of a second conductivity type below the capping layer, the photodiode having an upper surface deeper than about 1 μm, as measured from an upper surface of the semiconductor substrate, a charge detection section receiving charges stored in the photoelectric conversion through a charge transfer section and converting the received charges into respective electrical signals, a voltage application section adapted to apply voltage to the capping layer and to a lower portion of the semiconductor substrate to control a width of a depletion layer on the photodiode, and a signal operation section adapted to generate red, green, and blue, signals according to signals from the charge detection section.
摘要翻译：图像传感器包括在半导体衬底中的光电转换部分，光电转换部分具有第一导电类型的覆盖层和在封盖层下方的第二导电类型的光电二极管，光电二极管的上表面比约1μm大，从半导体衬底的上表面测量的电荷检测部分，接收通过电荷转移部分存储在光电转换中的电荷并将接收的电荷转换成各自的电信号;电压施加部分，适于向封盖层施加电压以及控制半导体衬底的下部以控制光电二极管上的耗尽层的宽度，以及适于根据来自电荷检测部分的信号产生红，绿和蓝信号的信号操作部分。

14. 发明申请

US20080087733A1 Image sensor and method of fabricating the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080087733A1
公开(公告)日：2008-04-17
申请号：US11896951
申请日：2007-09-07
申请人： Won-je Park , Duk-min Yi
发明人： Won-je Park , Duk-min Yi
IPC分类号： G06K7/10
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： An image sensor according to an example embodiment may include a plurality of photoelectric transformation active regions, a plurality of read active regions, and/or at least one read gate. The plurality of photoelectric transformation active regions may be formed on a substrate. Each read active region may be formed adjacent to one of the plurality of photoelectric transformation active regions. Each read gate may be formed on one of the read active regions and partially overlap at least one of the adjacent photoelectric transformation active regions. Each read gate may be electrically isolated from the overlapping portion of the photoelectric transformation active region.
摘要翻译：根据示例实施例的图像传感器可以包括多个光电转换有效区域，多个读有效区域和/或至少一个读门极。多个光电转换有源区可以形成在基板上。每个读出的有源区可以形成为与多个光电转换有源区中的一个相邻。每个读取栅极可以形成在读取的有源区域中的一个上，并且部分地重叠相邻的光电转换有源区域中的至少一个。每个读取栅极可以与光电转换有源区域的重叠部分电隔离。

15. 发明申请

US20070075338A1 Image sensor and fabrication method thereof 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20070075338A1
公开(公告)日：2007-04-05
申请号：US11542340
申请日：2006-10-03
申请人： Young-Hoon Park , Jae-Ho Song , Won-Je Park , Jin-Hyeong Park , Jeong-Hoon Bae , Jung-Ho Park
发明人： Young-Hoon Park , Jae-Ho Song , Won-Je Park , Jin-Hyeong Park , Jeong-Hoon Bae , Jung-Ho Park
IPC分类号： H01L29/768
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.
摘要翻译：图像传感器包括其中限定有活性像素传感器区域的基板，形成在有源像素传感器区域中的多个第一导电型光电二极管和形成在有源像素传感器区域中的第一导电类型的第一深阱，不包括多个第一导电型光电二极管。此外，第一个深阱电连接到正电压。

16. 发明授权

US07994551B2 Image sensor and method of fabricating the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07994551B2
公开(公告)日：2011-08-09
申请号：US11896951
申请日：2007-09-07
申请人： Won-je Park , Duk-min Yi
发明人： Won-je Park , Duk-min Yi
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： An image sensor according to an example embodiment may include a plurality of photoelectric transformation active regions, a plurality of read active regions, and/or at least one read gate. The plurality of photoelectric transformation active regions may be formed on a substrate. Each read active region may be formed adjacent to one of the plurality of photoelectric transformation active regions. Each read gate may be formed on one of the read active regions and partially overlap at least one of the adjacent photoelectric transformation active regions. Each read gate may be electrically isolated from the overlapping portion of the photoelectric transformation active region.
摘要翻译：根据示例实施例的图像传感器可以包括多个光电转换有效区域，多个读有效区域和/或至少一个读门极。多个光电转换有源区可以形成在基板上。每个读出的有源区可以形成为与多个光电转换有源区中的一个相邻。每个读取栅极可以形成在读取的有源区域中的一个上，并且部分地重叠相邻的光电转换有源区域中的至少一个。每个读取栅极可以与光电转换有源区域的重叠部分电隔离。

17. 发明授权

US07667178B2 Image sensor, method of manufacturing the same, and method of operating the same 有权
标题翻译：图像传感器，其制造方法及其操作方法
公开(公告)号：US07667178B2
公开(公告)日：2010-02-23
申请号：US12010362
申请日：2008-01-24
申请人： Jeong-hoon Bae , Tae-seok Oh , Ki-hong Kim , Hyoun-min Baek , Won-je Park , Jung-ho Park
发明人： Jeong-hoon Bae , Tae-seok Oh , Ki-hong Kim , Hyoun-min Baek , Won-je Park , Jung-ho Park
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L27/14647 , H01L27/1463 , H01L27/14656 , H01L27/14689
摘要： An image sensor includes a photoelectric conversion section in a semiconductor substrate, the photoelectric conversion section having a capping layer of a first conductivity type and a photodiode of a second conductivity type below the capping layer, the photodiode having an upper surface deeper than about 1 μm, as measured from an upper surface of the semiconductor substrate, a charge detection section receiving charges stored in the photoelectric conversion through a charge transfer section and converting the received charges into respective electrical signals, a voltage application section adapted to apply voltage to the capping layer and to a lower portion of the semiconductor substrate to control a width of a depletion layer on the photodiode, and a signal operation section adapted to generate red, green, and blue, signals according to signals from the charge detection section.
摘要翻译：图像传感器包括在半导体衬底中的光电转换部分，光电转换部分具有第一导电类型的覆盖层和在覆盖层下方的第二导电类型的光电二极管，光电二极管的上表面深度大于约1μm ，从半导体衬底的上表面测量的电荷检测部分，接收通过电荷转移部分存储在光电转换中的电荷并将接收的电荷转换成各自的电信号;电压施加部分，适于向封盖层施加电压以及控制半导体衬底的下部以控制光电二极管上的耗尽层的宽度，以及适于根据来自电荷检测部分的信号产生红，绿和蓝信号的信号操作部分。

18. 发明申请

US20070161140A1 Image sensor and method of manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US20070161140A1
公开(公告)日：2007-07-12
申请号：US11651542
申请日：2007-01-10
申请人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
发明人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.
摘要翻译：示例性实施例公开了能够防止或减少图像滞后的图像传感器及其制造方法。示例性方法可以包括在半导体衬底上形成栅绝缘膜和掺杂有第一导电型掺杂剂的栅极导电膜; 通过图案化栅极绝缘膜和栅极导电膜形成转移栅极图案; 以及通过在与所述传输栅极图案的一个区域相邻的所述半导体衬底中形成第一导电型光电二极管，通过在所述第一导电型光电二极管上形成第二导电型光电二极管，并且形成在半导体衬底中与传输栅极图案的另一个区域相邻的第一导电型浮动扩散区域。

19. 发明申请

US20070023854A1 CMOS image sensors including pickup regions and methods of fabricating the same 有权
标题翻译：包括拾取区域的CMOS图像传感器及其制造方法
公开(公告)号：US20070023854A1
公开(公告)日：2007-02-01
申请号：US11472058
申请日：2006-06-21
申请人： Won-Je Park
发明人： Won-Je Park
IPC分类号： H01L31/06
CPC分类号： H01L27/14643 , H01L27/14689
摘要： A CMOS image sensor includes a field isolation film defining first, second, and third active fields in a substrate having a first conductivity type, a photodiode region in the first active field, the photodiode region having a second conductivity type opposite the first conductivity type, and a floating diffusion region of the second conductivity type in the second active field. A source follower gate is conductively connected with the floating diffusion region and intersects the second active field. First and second source/drain regions of the second conductivity type are provided in the second active field at opposite sides of the source follower gate, and a pickup region is disposed in the third active field. The third active field may be adjacent a portion of the second active field where the first source/drain region or the second source/drain region is located, and the floating diffusion region may be isolated from the first and second source/drain regions.
摘要翻译： CMOS图像传感器包括在具有第一导电类型的衬底中限定第一，第二和第三有源场的场隔离膜，第一有源场中的光电二极管区域，具有与第一导电类型相反的第二导电类型的光电二极管区域，以及第二有源场中的第二导电类型的浮动扩散区。源极跟随器栅极与浮动扩散区域导电连接并与第二有源场相交。在源极跟随器栅极的相对侧的第二有源场中提供第二导电类型的第一和第二源极/漏极区域，并且拾取区域设置在第三有源场中。第三有源场可以与第一源极/漏极区或第二源极/漏极区所在的第二有源场的一部分相邻，并且浮动扩散区可以与第一和第二源极/漏极区隔离。

20. 发明授权

US08309996B2 CMOS image sensors 有权
标题翻译： CMOS图像传感器
公开(公告)号：US08309996B2
公开(公告)日：2012-11-13
申请号：US13064289
申请日：2011-03-16
申请人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14636
摘要： Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.
摘要翻译：提供互补金属氧化物半导体（CMOS）图像传感器（CIS）及其制造方法，传感器包括在其中限定了第一，第二，第三和第四区域的基板上的外延层。可以在第一区域中的外延层的上部形成光电二极管。可以在第二，第三和第四区域中的外延层上形成多个栅极结构。可以在栅极结构和第一和第二区域中的外延层上形成第一阻挡层。可以在与第二区域中的栅极结构相邻的外延层的上部形成第一杂质层，并且在第三和第四区域中与栅极结构相邻的外延层的上部形成第二杂质层。可以在光电二极管上方形成滤色器层。可以在滤色器层上形成微透镜。

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