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    • 11. 发明授权
    • Two-dimensional radiation detector
    • 二维辐射探测器
    • US07075088B2
    • 2006-07-11
    • US11102374
    • 2005-04-08
    • Narumi WatanabeToshinori Yoshimuta
    • Narumi WatanabeToshinori Yoshimuta
    • G01T1/24
    • G01T1/2928H01L27/14609H01L27/14623H01L27/14676
    • A radiation detector is provided that has no fluctuations in detection sensitivity and is capable of suppressing the influence of the noise emitted from a light source. In the radiation detector in the present invention, a light emitting unit applies light to the end face of a flat light guide. On receiving the light, the flat light guide emits flat light from its surface toward an active matrix substrate. The light is led to a semiconductor thick film after passing through the active matrix substrate. The noise emitted from the light emitting unit to the active matrix substrate or the semiconductor thick film can be blocked by an electromagnetic shield. An incident radiation to the semiconductor thick film in this condition can be detected while the effect of the noise emitted from the light emitting unit is suppressed, and fluctuations in radiation sensitivity do not occur.
    • 提供一种辐射检测器,其不具有检测灵敏度的波动,并且能够抑制从光源发出的噪声的影响。 在本发明的放射线检测器中,发光单元对平面光导的端面施加光。 在接收到光时,平面光导从其表面向有源矩阵基板发射平面光。 光通过有源矩阵基板后,导致半导体厚膜。 从发光单元发射到有源矩阵基板或半导体厚膜的噪声可被电磁屏蔽阻挡。 可以在抑制从发光单元发出的噪声的影响的同时检测在该状态下对半导体厚膜的入射辐射,并且不会发生辐射敏感度的波动。
    • 18. 发明申请
    • RADIATION DETECTOR
    • 辐射探测器
    • US20110163306A1
    • 2011-07-07
    • US13063061
    • 2008-09-10
    • Shingo FuruiToshinori YoshimutaJunichi SuzukiKoji WatadaniSatoru Morita
    • Shingo FuruiToshinori YoshimutaJunichi SuzukiKoji WatadaniSatoru Morita
    • H01L31/0272
    • G01T1/244H01L27/14618H01L27/14676H01L2924/0002H01L2924/00
    • A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.
    • 本发明的放射线检测器具有可固化的合成树脂膜,其覆盖辐射敏感半导体层,载体选择性高电阻膜和公共电极的暴露表面,其中不含氯化物的材料混合使用在制造过程中 可固化合成树脂膜。 这样可以防止载流子选择性高电阻膜和半导体层中的氯离子形成针孔和空隙。 也可以在公共电极的露出表面和可固化合成树脂膜之间设置不透过离子性材料的保护膜,由此防止载体选择性高电阻膜被包含在可固化合成树脂膜中的氯离子腐蚀 ,并且防止流过半导体层的暗电流增加。
    • 20. 发明授权
    • Two-dimensional image detector with disturbance-blocking buffer
    • 具有扰动阻塞缓冲器的二维图像检测器
    • US07450174B2
    • 2008-11-11
    • US11079281
    • 2005-03-15
    • Narumi WatanabeToshinori Yoshimuta
    • Narumi WatanabeToshinori Yoshimuta
    • H04N5/225H01L23/34H05K7/20
    • G01T1/244H01L2924/0002H01L2924/00
    • A two-dimensional image detector includes a sensitive semiconductor layer for converting optical information or radiological information corresponding to a two-dimensional image of a detection subject into electrical charge information; an active matrix substrate for retrieving the electrical charge information converted on the sensitive semiconductor layer; an amplifying electric circuit portion for amplifying the electrical charge information retrieved on the active matrix substrate and converting the electrical charge information into an electrical signal for an image; a disturbance-causing member attached to one side of the amplifying electric circuit portion which may cause a disturbance in the electrical signal. A first disturbance blocking buffer is disposed between the disturbance-causing member and the amplifying electric circuit portion for blocking the disturbance.
    • 二维图像检测器包括用于将与检测对象的二维图像对应的光学信息或放射线信息转换为电荷信息的敏感半导体层; 用于检索在敏感半导体层上转换的电荷信息的有源矩阵基板; 放大电路部分,用于放大在有源矩阵基板上检索的电荷信息,并将电荷信息转换为图像的电信号; 安装在放大电路部分的一侧的可能引起电信号干扰的扰乱构件。 第一干扰阻塞缓冲器设置在扰乱引起部件和放大电路部分之间以阻止干扰。