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11. 发明申请

US20090290611A1 SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20090290611A1
公开(公告)日：2009-11-26
申请号：US12198152
申请日：2008-08-26
申请人： Tohru Takiguchi , Yuichiro Okunuki , Go Sakaino
发明人： Tohru Takiguchi , Yuichiro Okunuki , Go Sakaino
IPC分类号： H01S5/00 , H01L21/02
CPC分类号： H01S5/227 , H01S5/2222 , H01S5/2226 , H01S5/2275
摘要： A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor layer and an n-type semiconductor layer that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5×1017 cm−3 or less near the pn junction.
摘要翻译：半导体激光器包括：包括彼此堆叠的p型覆层，有源层和n型覆层的脊结构; 以及埋藏在山脊结构侧面的埋藏层。掩埋层包括形成pn结的p型半导体层和n型半导体层; p型半导体层和n型半导体层中的一方在pn结附近具有5×10 17 cm -3以下的载流子浓度。

12. 发明授权

US06583510B2 Semiconductor device with varying thickness gold electrode 失效
标题翻译：具有不同厚度金电极的半导体器件
公开(公告)号：US06583510B2
公开(公告)日：2003-06-24
申请号：US09915269
申请日：2001-07-27
申请人： Yoshihiko Hanamaki , Toshio Tanaka , Tohru Takiguchi
发明人： Yoshihiko Hanamaki , Toshio Tanaka , Tohru Takiguchi
IPC分类号： H01L2348
CPC分类号： H01L29/456 , H01L29/45 , H01S5/0425 , H01S5/06226 , H01S5/22
摘要： An electrode for a semiconductor device includes a gold-containing thin film and a gold-containing plated film on the thin film. The plated film covers the entire thin film. No open surface is present between the thin gold film and the gold plating so no excessive current concentration occurs in any area.
摘要翻译：用于半导体器件的电极包括薄膜上的含金薄膜和含金的镀膜。镀膜覆盖整个薄膜。在薄金膜和金镀层之间不存在开放表面，因此在任何区域都不会出现过大的电流集中。

13. 发明授权

US06455338B1 Method of manufacturing an integrated semiconductor laser-modulator device 失效
标题翻译：制造集成半导体激光调制装置的方法
公开(公告)号：US06455338B1
公开(公告)日：2002-09-24
申请号：US09400531
申请日：1999-09-21
申请人： Kazuhisa Takagi , Hitoshi Tada , Tohru Takiguchi
发明人： Kazuhisa Takagi , Hitoshi Tada , Tohru Takiguchi
IPC分类号： H01L2120
CPC分类号： H01S5/0265 , H01S5/2077 , H01S5/2081
摘要： An integrated semiconductor laser-modulator device less affected by a fluctuating electric field due to modulating signals applied to the modulator has improved frequency characteristics. The integrated semiconductor laser-modulator includes an active layer, a beam waveguide layer having a bulk structure with a bandgap energy larger than that of the active layer but smaller than that of a laser beam absorption layer having a bulk structure, wherein waveguides of the laser and modulator are connected and aligned, and a cladding layer including a diffraction grating is disposed on top of or beneath the waveguides.
摘要翻译：由于施加到调制器的调制信号而受波动电场影响较小的集成半导体激光调制器具有改善的频率特性。集成半导体激光调制器包括有源层，具有体积结构的波导波导层，其带隙能量大于有源层的带隙能量，但小于具有体结构的激光束吸收层的带隙能量，其中激光波导并且调制器被连接和对准，并且包括衍射光栅的包层设置在波导的顶部或下方。

14. 发明授权

US5671242A Strained quantum well structure 失效
标题翻译：应变量子阱结构
公开(公告)号：US5671242A
公开(公告)日：1997-09-23
申请号：US515909
申请日：1995-08-16
申请人： Tohru Takiguchi , Katsuhiko Goto
发明人： Tohru Takiguchi , Katsuhiko Goto
IPC分类号： H01L21/20 , G02F1/017 , H01S5/00 , H01S5/026 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19 , H01L29/06
CPC分类号： B82Y20/00 , G02F1/01708 , H01S5/0265 , H01S5/34 , G02F2001/01766 , H01S5/2272 , H01S5/2275 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： A semiconductor device includes a substrate having a lattice constant and a stress compensation strained quantum well layer including compressively strained layers having a lattice constant larger than the lattice constant of the substrate and tensively strained layers having a lattice constant smaller than the lattice constant of the substrate which are alternatingly laminated on the substrate, wherein the average strain of the stress compensation strained quantum well layer is a positive quantity. Therefore, the critical thickness of the strained quantum well layer is increased so that the degree of freedom in designing the strained quantum well layer is increased, resulting in a semiconductor device with improved characteristics.
摘要翻译：半导体器件包括具有晶格常数的衬底和应力补偿应变量子阱层，其包括具有大于衬底的晶格常数的晶格常数的压缩应变层和具有小于衬底的晶格常数的晶格常数的紧张应变层其交替层压在基板上，其中应力补偿应变量子阱层的平均应变为正量。因此，应变量子阱层的临界厚度增加，使得应变量子阱层的设计自由度增加，导致具有改进特性的半导体器件。

15. 发明授权

US5544188A Semiconductor laser device having a high emission efficiency and a large modulation bandwidth 失效
标题翻译：具有高发光效率和大调制带宽的半导体激光器件
公开(公告)号：US5544188A
公开(公告)日：1996-08-06
申请号：US348191
申请日：1994-11-28
申请人： Tohru Takiguchi , Katsuhiko Goto
发明人： Tohru Takiguchi , Katsuhiko Goto
IPC分类号： H01S5/00 , H01S5/06 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/04 , H01S5/3407 , H01S5/3415 , H01S5/3416
摘要： A semiconductor laser device includes an active layer having a multiquantum well (MQW) structure including well layers and barrier layers, each well layer being disposed between a pair of barrier layers. In this structure, the barrier layers have respective band gap energies that gradually decrease from a largest value in a central part of the MQW structure toward interfaces of the MQW structure with other layers of the laser and the well layers have respective band gap energies that gradually increase from a smallest value in the central part of the MQW structure toward the interfaces. A semiconductor laser device that produces uniform charge carrier injection, has a high thermal electron emission efficiency, and a broad modulation bandwidth is realized.
摘要翻译：半导体激光器件包括具有包括阱层和阻挡层的多量子阱（MQW）结构的有源层，每个阱层设置在一对势垒层之间。在这种结构中，势垒层具有从MQW结构的中心部分的最大值朝向MQW结构与激光的其它层的界面逐渐减小的带隙能量，并且阱层具有逐渐的各自的带隙能量从MQW结构的中心部分的最小值向接口增加。产生均匀的电荷载流子注入的半导体激光器件具有高的热电子发射效率，并且实现了宽的调制带宽。

16. 发明授权

US5459747A Semiconductor optical devices 失效
标题翻译：半导体光学器件
公开(公告)号：US5459747A
公开(公告)日：1995-10-17
申请号：US260368
申请日：1994-06-14
申请人： Tohru Takiguchi , Katsuhiko Goto , Hirotaka Kizuki
发明人： Tohru Takiguchi , Katsuhiko Goto , Hirotaka Kizuki
IPC分类号： H01L33/06 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/20 , H01L33/30 , H01L33/36 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/0625 , H01S5/12 , H01S5/20 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/106 , H01S3/18
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/06256 , H01S5/12 , H01S5/1231 , H01S5/2077 , H01S5/2081 , H01S5/2086 , H01S5/2272 , H01S5/2275 , H01S5/3428 , H01S5/34306 , H01S5/34313
摘要： A semiconductor optical device includes a first semiconductor layer, and a diffraction grating disposed on the first semiconductor layer. The diffraction grating includes portions of a superlattice layer grown on the first semiconductor layer and including alternatingly arranged second semiconductor layers of a semiconductor material in which mass transport hardly occurs, during growth of other semiconductor layers and third semiconductor layers of a semiconductor material different from the material of the second semiconductor layers. The device includes a fourth semiconductor layer burying the diffraction grating. In this structure, since the second semiconductor layers are included in the diffraction grating, the shape of the diffraction grating is maintained during the vapor phase deposition of the fourth semiconductor layer. Therefore, the thickness, amplitude, and pitch of the diffraction grating that determine the optical coupling constant are controlled with high precision.
摘要翻译：半导体光学器件包括第一半导体层和设置在第一半导体层上的衍射光栅。衍射光栅包括在第一半导体层上生长的超晶格层的部分，并且包括交替布置的半导体材料的交替布置的第二半导体层，其中几乎不发生质量传输，在其它半导体层和与第三半导体材料不同的半导体材料的第三半导体层的生长期间第二半导体层的材料。该器件包括埋入衍射光栅的第四半导体层。在这种结构中，由于第二半导体层包括在衍射光栅中，所以在第四半导体层的气相沉积期间维持衍射光栅的形状。因此，确定光耦合常数的衍射光栅的厚度，振幅和间距以高精度被控制。

17. 发明申请

US20110002352A1 OPTICAL WAVEGUIDE INTEGRATED SEMICONDUCTOR OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：光波导集成半导体光学器件及其制造方法
公开(公告)号：US20110002352A1
公开(公告)日：2011-01-06
申请号：US12713215
申请日：2010-02-26
申请人： Tohru Takiguchi
发明人： Tohru Takiguchi
IPC分类号： H01S5/323 , H01S5/026 , H01L21/20
CPC分类号： H01S5/026 , G02B6/12004 , G02B2006/12078 , H01L21/02538 , H01L21/0262 , H01S5/2218 , H01S5/2275
摘要： An optical waveguide integrated semiconductor optical device includes a laser and an optical waveguide. The laser includes an active layer and a first cladding layer which are stacked on a second cladding layer. The optical waveguide includes an optical guiding layer and an undoped InP layer which are also stacked on the second cladding layer. A high resistance layer is located between the top surface of the optical guiding layer and a surface of the undoped InP layer and between a side of the first cladding layer and a side of the undoped InP layer.
摘要翻译：光波导集成半导体光学器件包括激光器和光波导。激光器包括层叠在第二覆层上的有源层和第一覆层。光波导包括也被层叠在第二覆层上的光引导层和未掺杂的InP层。高电阻层位于光导层的顶表面和未掺杂的InP层的表面之间，并且位于第一包层的一侧和未掺杂的InP层的一侧之间。

18. 发明授权

US07720123B2 Buried type semiconductor laser 失效
标题翻译：埋式半导体激光器
公开(公告)号：US07720123B2
公开(公告)日：2010-05-18
申请号：US11611933
申请日：2006-12-18
申请人： Tohru Takiguchi , Chikara Watatani
发明人： Tohru Takiguchi , Chikara Watatani
IPC分类号： H01S5/00
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2224 , H01S5/2227 , H01S5/2275 , H01S5/3072
摘要： A buried type semiconductor laser 1 is made of a p-type InP substrate 2 and includes a ridge section 6 made up of a p type InP first clad layer 3, AlGaInAs distorted quantum well active layer 4 and n type InP second clad layer 5 laminated one atop another. On both sides of the ridge section 6, an buried current block layer 10 made up of a p-type InP first buried layer 7, n-type InP second buried layer 8 and semi-insulating Fe-doped InP third buried layer 9 laminated one atop another is formed. A top face of the third buried layer 9 is covered with an n-type InP semiconductor layer 11. The above structure can suppress the occurrence of a leakage current path on the top face of the third buried layer 9 and improve reliability of the buried type semiconductor laser.
摘要翻译：掩埋型半导体激光器1由p型InP衬底2制成，并且包括由ap型InP第一包层3，AlGaInAs失真的量子阱有源层4和n型InP第二覆盖层5组成的脊部6 在另一个上面在脊部6的两侧，形成由p型InP第一掩埋层7，n型InP第二掩埋层8和半绝缘的Fe掺杂的InP第三掩埋层9构成的埋入电流阻挡层10，形成另一个顶部。第三掩埋层9的顶面被n型InP半导体层11覆盖。上述结构可以抑制在第三掩埋层9的顶面上产生漏电流路径，并且提高掩埋型的可靠性半导体激光器。

19. 发明申请

US20080049805A1 BURIED TYPE SEMICONDUCTOR LASER 失效
标题翻译： BURIED型半导体激光器
公开(公告)号：US20080049805A1
公开(公告)日：2008-02-28
申请号：US11611933
申请日：2006-12-18
申请人： Tohru TAKIGUCHI , Chikara WATATANI
发明人： Tohru TAKIGUCHI , Chikara WATATANI
IPC分类号： H01S5/00 , H01S3/08 , H01S3/04
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2224 , H01S5/2227 , H01S5/2275 , H01S5/3072
摘要： A semiconductor laser includes a p-type InP substrate and a ridge section of a p type InP first cladding layer, an AlGaInAs strained quantum well active layer and a n type InP second cladding layer, laminated one atop the other. On both sides of the ridge section, a current blocking layer including a p-type InP first burying layer, an n-type InP second burying layer, and a semi-insulating Fe-doped InP third burying layer are laminated, one atop the other. A top face of the third burying layer is covered with an n-type InP semiconductor layer. This structure suppresses leakage current on the top face of the third burying layer and improves reliability of the semiconductor laser.
摘要翻译：半导体激光器包括p型InP衬底和p型InP第一包覆层的脊部分，AlGaInAs应变量子阱有源层和n型InP第二覆层。在脊部的两侧，层压包括p型InP第一掩埋层，n型InP第二掩埋层和半绝缘的Fe掺杂的InP第三埋入层的电流阻挡层，一个在另一个之上。第三掩埋层的顶面被n型InP半导体层覆盖。该结构抑制第三埋层的顶面的漏电流，提高半导体激光器的可靠性。

20. 发明申请

US20060018358A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20060018358A1
公开(公告)日：2006-01-26
申请号：US11144772
申请日：2005-06-06
申请人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
发明人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
IPC分类号： H01S3/097 , H01S5/00
CPC分类号： H01S5/0425 , H01S5/0021 , H01S5/2214 , H01S5/2231
摘要： A semiconductor laser device includes: an electrically insulating film, on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shave with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.
摘要翻译：半导体激光器件包括：激光芯片的顶面上的电绝缘膜; 和金属膜，在电绝缘膜上。电绝缘膜和/或金属膜在平面上具有五个或更多个顶点的多边形刮削，每个顶点具有小于180度的内角。由于操作期间的温度变化引起的应力减小，导致寿命更长，可靠性更高的半导体激光器件。

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