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1. 发明授权

US07720123B2 Buried type semiconductor laser 失效
标题翻译：埋式半导体激光器
公开(公告)号：US07720123B2
公开(公告)日：2010-05-18
申请号：US11611933
申请日：2006-12-18
申请人： Tohru Takiguchi , Chikara Watatani
发明人： Tohru Takiguchi , Chikara Watatani
IPC分类号： H01S5/00
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2224 , H01S5/2227 , H01S5/2275 , H01S5/3072
摘要： A buried type semiconductor laser 1 is made of a p-type InP substrate 2 and includes a ridge section 6 made up of a p type InP first clad layer 3, AlGaInAs distorted quantum well active layer 4 and n type InP second clad layer 5 laminated one atop another. On both sides of the ridge section 6, an buried current block layer 10 made up of a p-type InP first buried layer 7, n-type InP second buried layer 8 and semi-insulating Fe-doped InP third buried layer 9 laminated one atop another is formed. A top face of the third buried layer 9 is covered with an n-type InP semiconductor layer 11. The above structure can suppress the occurrence of a leakage current path on the top face of the third buried layer 9 and improve reliability of the buried type semiconductor laser.
摘要翻译：掩埋型半导体激光器1由p型InP衬底2制成，并且包括由ap型InP第一包层3，AlGaInAs失真的量子阱有源层4和n型InP第二覆盖层5组成的脊部6 在另一个上面在脊部6的两侧，形成由p型InP第一掩埋层7，n型InP第二掩埋层8和半绝缘的Fe掺杂的InP第三掩埋层9构成的埋入电流阻挡层10，形成另一个顶部。第三掩埋层9的顶面被n型InP半导体层11覆盖。上述结构可以抑制在第三掩埋层9的顶面上产生漏电流路径，并且提高掩埋型的可靠性半导体激光器。

2. 发明授权

US07855096B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07855096B2
公开(公告)日：2010-12-21
申请号：US12034195
申请日：2008-02-20
申请人： Chikara Watatani , Toru Takiguchi
发明人： Chikara Watatani , Toru Takiguchi
IPC分类号： H01L21/00
CPC分类号： H01S5/227 , H01S5/2086 , H01S5/221 , H01S5/2272 , H01S5/2275
摘要： A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2 film (insulating film) is formed on the semiconductor film, and the SiO2 film is patterned. The semiconductor film is etched using the SiO2 film as a mask to form a mesa structure. The surface of the SiO2 film is treated by ashing, using SF6 gas (fluorine-containing gas), to terminate the surface of the SiO2 film with fluorine. The mesa structure is selectively buried with a III-V compound semiconductor film, using the SiO2 film having the surface that has been terminated by fluorine, as a mask.
摘要翻译：在GaAs衬底（半导体衬底）上形成半导体膜。在半导体膜上形成SiO 2膜（绝缘膜），对SiO 2膜进行图案化。使用SiO 2膜作为掩模蚀刻半导体膜以形成台面结构。用SF6气体（含氟气体）通过灰化处理SiO 2膜的表面，用氟终止SiO 2膜的表面。使用具有由氟终止的表面的SiO 2膜作为掩模，用III-V族化合物半导体膜选择性地掩埋台面结构。

3. 发明授权

US07816160B2 Manufacturing method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07816160B2
公开(公告)日：2010-10-19
申请号：US12201114
申请日：2008-08-29
申请人： Chikara Watatani , Takashi Nagira
发明人： Chikara Watatani , Takashi Nagira
IPC分类号： H01L21/00
CPC分类号： G02B5/1857
摘要： The present invention includes forming an optical guide layer on a substrate, forming a cap layer on the optical guide layer, and forming openings in parts of the optical guide layer and the cap layer to form a diffraction grating from part of the optical guide layer. The substrate is heated to a temperature less than a growth temperature of the cap layer and equal to at least a temperature at which mass transport of the cap layer occurs to cover, with part of the cap layer, the lateral faces of the optical guide layer exposed by the openings. A burying layer burying the diffraction grating is formed on the substrate, after the mass transport.
摘要翻译：本发明包括在基板上形成光导层，在光导层上形成覆盖层，在光导层和盖层的部分形成开口，以形成衍射光栅。衬底被加热到小于帽层的生长温度的温度，并且等于至少覆盖帽层的质量传输的温度，以覆盖覆盖层的一部分的光导层的侧面暴露在开口处。在传质后，在基板上形成掩埋衍射光栅的掩埋层。

4. 发明授权

US07550304B2 Method for manufacturing semiconductor laser element 有权
标题翻译：制造半导体激光元件的方法
公开(公告)号：US07550304B2
公开(公告)日：2009-06-23
申请号：US11624722
申请日：2007-01-19
申请人： Takashi Nagira , Chikara Watatani
发明人： Takashi Nagira , Chikara Watatani
IPC分类号： H01L21/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2086 , H01S5/2201 , H01S5/2206 , H01S5/2222 , H01S5/2275 , H01S5/34306
摘要： A method for manufacturing a semiconductor laser element includes forming a semiconductor laminated structure, having an active layer, on a substrate; etching the semiconductor laminated structure to form a mesa; exposing the mesa to an oxygen-containing ambient forming an oxide layer on the mesa; removing a first part of the oxide layer from the mesa at a temperature lower than a critical temperature at which bonds between atoms of the oxide layer become stronger, by etching with a gas; removing the remainder of the oxide layer from the mesa at a temperature higher than the critical temperature by etching with a gas; and forming a burying layer coating the mesa.
摘要翻译：一种制造半导体激光元件的方法包括在衬底上形成具有有源层的半导体叠层结构; 蚀刻半导体层叠结构以形成台面; 将台面暴露于在台面上形成氧化物层的含氧环境; 通过用气体蚀刻，在低于氧化物层的原子之间的键合变得更强的临界温度的温度下从台面去除第一部分氧化物层; 在高于临界温度的温度下通过用气体蚀刻从台面去除剩余的氧化物层; 并形成涂覆台面的掩埋层。

5. 发明申请

US20090087966A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20090087966A1
公开(公告)日：2009-04-02
申请号：US12034195
申请日：2008-02-20
申请人： Chikara Watatani , Toru Takiguchi
发明人： Chikara Watatani , Toru Takiguchi
IPC分类号： H01L21/36
CPC分类号： H01S5/227 , H01S5/2086 , H01S5/221 , H01S5/2272 , H01S5/2275
摘要： A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2 film (insulating film) is formed on the semiconductor film, and the SiO2 film is patterned. The semiconductor film is etched using the SiO2 film as a mask to form a mesa structure. The surface of the SiO2 film is treated by ashing, using SF6 gas (fluorine-containing gas), to terminate the surface of the SiO2 film with fluorine. The mesa structure is selectively buried with a III-V compound semiconductor film, using the SiO2 film having the surface that has been terminated by fluorine, as a mask.
摘要翻译：在GaAs衬底（半导体衬底）上形成半导体膜。在半导体膜上形成SiO 2膜（绝缘膜），对SiO 2膜进行图案化。使用SiO 2膜作为掩模蚀刻半导体膜以形成台面结构。用SF6气体（含氟气体）通过灰化处理SiO 2膜的表面，用氟终止SiO 2膜的表面。使用具有由氟终止的表面的SiO 2膜作为掩模，用III-V族化合物半导体膜选择性地掩埋台面结构。

6. 发明申请

US20080054277A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20080054277A1
公开(公告)日：2008-03-06
申请号：US11923751
申请日：2007-10-25
申请人： Masayoshi Takemi , Kenichi Ono , Yoshihiko Hanamaki , Chikara Watatani , Tetsuya Yagi , Harumi Nishiguchi , Motoko Sasaki , Shinji Abe , Yasuaki Yoshida
发明人： Masayoshi Takemi , Kenichi Ono , Yoshihiko Hanamaki , Chikara Watatani , Tetsuya Yagi , Harumi Nishiguchi , Motoko Sasaki , Shinji Abe , Yasuaki Yoshida
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/2226 , H01S5/2231 , H01S5/34326 , H01S5/3436
摘要： The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.
摘要翻译：半导体激光器件包括有源层，p型覆层和p型覆盖层。依次叠层这些层以提供半导体激光器件。 p型覆盖层包括p型掺杂剂和n型掺杂剂。在另一方面，p型覆盖层包括包含第一p型掺杂剂的第一层和包含扩散系数小于第一p型掺杂剂的扩散系数的第二p型掺杂剂的第二层。第一层远离有源层，第二层靠近有源层。在另一方面，p型覆盖层包括作为p型掺杂剂的碳（C）。根据这些结构，可以防止p型掺杂剂扩散到有源层和p型覆层中。

7. 发明申请

US20050123018A1 Ridge type distributed feedback semiconductor laser 审中-公开
标题翻译：脊型分布式反馈半导体激光器
公开(公告)号：US20050123018A1
公开(公告)日：2005-06-09
申请号：US10952901
申请日：2004-09-30
申请人： Kazuhisa Takagi , Satoshi Shirai , Toshitaka Aoyagi , Yasuaki Tatsuoka , Chikara Watatani , Yoshihiko Hanamaki
发明人： Kazuhisa Takagi , Satoshi Shirai , Toshitaka Aoyagi , Yasuaki Tatsuoka , Chikara Watatani , Yoshihiko Hanamaki
IPC分类号： H01S5/22 , H01S3/08 , H01S5/10 , H01S5/12
CPC分类号： H01S5/12 , H01S5/1039 , H01S5/1221 , H01S5/22
摘要： A distributed feedback semiconductor laser includes an n-InP substrate, an n-InGaAsP diffraction grating layer above the n-InP substrate, an AlGaInAs-MQW active layer above the diffraction grating layer and a ridge portion on the active layer. The ridge portion includes a p-InP cladding layer and a p-InGaAs contact layer. The wavelength λg corresponding to the bandgap energy of the diffraction grating layer and the oscillation wavelength λ of laser light produced by the laser satisfy the relationship λ−150 nm
摘要翻译：分布式反馈半导体激光器包括n-InP衬底，n-InP衬底上的n-InGaAsP衍射光栅层，衍射光栅层上方的AlGaInAs-MQW有源层和有源层上的脊部分。脊部包括p-InP包层和p-InGaAs接触层。对应于衍射光栅层的带隙能量的波长兰博德纹和由激光产生的激光的振荡波长λ满足关系式<？in-line-formula description =“In-line Formulas”end =“lead”？> λ-150nm

8. 发明授权

US08457451B2 Semiconductor optical element 有权
标题翻译：半导体光学元件
公开(公告)号：US08457451B2
公开(公告)日：2013-06-04
申请号：US12690950
申请日：2010-01-21
申请人： Takeshi Yamatoya , Yoshimichi Morita , Chikara Watatani
发明人： Takeshi Yamatoya , Yoshimichi Morita , Chikara Watatani
IPC分类号： G02B6/12
CPC分类号： G02B6/125 , G02B6/136 , G02B6/2813
摘要： A semiconductor optical element having a mesa structure formed by wet etching, includes a mesa structure having a ridge-type mesa structure or a high-mesa-type mesa structure, the mesa structure being disposed on a semiconductor substrate, and an extended mesa on the semiconductor substrate, the extended mesa being connected to a corner of the mesa structure and being the same material as the mesa structure.
摘要翻译：具有通过湿式蚀刻形成的台面结构的半导体光学元件包括具有脊型台面结构或高台面型台面结构的台面结构，台面结构设置在半导体基板上，并且延伸台面半导体衬底，延伸的台面连接到台面结构的角部并且与台面结构相同的材料。

9. 发明申请

US20100316080A1 SEMICONDUCTOR OPTICAL ELEMENT 审中-公开
标题翻译：半导体光学元件
公开(公告)号：US20100316080A1
公开(公告)日：2010-12-16
申请号：US12700769
申请日：2010-02-05
申请人： Harunaka Yamaguchi , Chikara Watatani , Masayoshi Takemi
发明人： Harunaka Yamaguchi , Chikara Watatani , Masayoshi Takemi
IPC分类号： H01S5/323
CPC分类号： H01S5/2275 , B82Y20/00 , H01S5/2222 , H01S5/3072 , H01S5/3434
摘要： A semiconductor optical element includes a p-type InP substrate doped with Zn; and a diffusion blocking layer doped with Ru, a p-type InP cladding layer, an active layer, and an n-type InP cladding layer sequentially arranged on the p-type InP substrate.
摘要翻译：半导体光学元件包括掺杂有Zn的p型InP衬底; 以及顺序地配置在p型InP衬底上的掺杂Ru的扩散阻挡层，p型InP包层，有源层和n型InP包层。

10. 发明授权

US07656921B2 Semiconductor laser device and method for manufacturing the same semiconductor laser device 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07656921B2
公开(公告)日：2010-02-02
申请号：US11397680
申请日：2006-04-05
申请人： Chikara Watatani
发明人： Chikara Watatani
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , H01S5/2227 , H01S5/2275
摘要： A current blocking structure of a semiconductor laser includes a p-type InP buried layer, an n-type InP current blocking layer, and a p-type InP current blocking layer laminated along the mesa side surface of a ridge. In the structure, an upper end part of the n-type InP current blocking layer is covered with the p-type InP buried layer and the p-type InP current blocking layer. The n-type InP current blocking layer is prevented from contacting n-type and p-type InP cladding layers. Creation of an ineffective current path from one of the n-type InP cladding layers through the n-type InP current blocking layer to a p-type InP cladding layer of the semiconductor laser is prevented.
摘要翻译：半导体激光器的电流阻挡结构包括沿着脊的台面侧表面层叠的p型InP掩埋层，n型InP电流阻挡层和p型InP电流阻挡层。在该结构中，n型InP电流阻挡层的上端部被p型InP掩埋层和p型InP电流阻挡层覆盖。防止n型InP电流阻挡层接触n型和p型InP覆层。可以防止从n型InP覆层中的一个通过n型InP电流阻挡层到半导体激光器的p型InP包覆层的无效电流通路的产生。

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