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11. 发明申请

US20140363607A1 SILICON CARBIDE SINGLE CRYSTAL WAFER AND MANUFACTURING METHOD FOR SAME 有权
标题翻译：硅碳化硅单晶及其制造方法
公开(公告)号：US20140363607A1
公开(公告)日：2014-12-11
申请号：US14241623
申请日：2012-08-29
申请人： Shinya Sato , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno
发明人： Shinya Sato , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno
IPC分类号： C30B23/02 , C30B29/36 , H01L29/16
CPC分类号： C30B23/02 , C30B23/00 , C30B29/36 , H01L29/1608 , Y10T428/21
摘要： Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced.The method is a method for manufacturing a SiC single crystal by the PVT method using a seed crystal and the ingot is a SiC single crystal ingot obtained by the method. Particularly, the silicon carbide single crystal substrate is a silicon carbide single crystal substrate in which when, by representing the diameter of the substrate as R, a center circle region having a diameter of 0.5×R centered around a center point O of the substrate and a doughnut-shaped peripheral region remaining by excluding the center circle region are defined, the average value of screw dislocation densities observed in the doughnut-shaped peripheral region is 80% or less of the average value of screw dislocation densities observed in the center circle region.
摘要翻译：提供一种制造具有高结晶质量，特别是极低螺旋位错密度的SiC单晶的方法和通过该方法获得的SiC单晶锭。特别地，提供了碳化硅单晶基板，其是从通过物理运输（PVT）方法生长的块状碳化硅单晶切割的基板，其中在周边区域中的螺旋位错密度小于中心区域，使得螺旋位错部分减少。该方法是通过使用晶种的PVT方法制造SiC单晶的方法，并且该锭是通过该方法获得的SiC单晶锭。特别地，碳化硅单晶衬底是碳化硅单晶衬底，其中当通过将衬底的直径表示为R时，以衬底的中心点O为中心的直径为0.5×R的中心圆区域，定义了通过排除中心圆区域而剩余的环状周边区域，在圆环状周边区域观察到的螺旋位错密度的平均值为在中心圆区域观察到的螺旋位错密度的平均值的80％以下。

12. 发明授权

US08491719B2 Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same 有权
标题翻译：碳化硅单晶，碳化硅单晶晶片及其制造方法
公开(公告)号：US08491719B2
公开(公告)日：2013-07-23
申请号：US12455243
申请日：2009-05-29
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： C30B23/00
CPC分类号： C30B29/36 , C30B23/00
摘要： The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 Ωcm or more, and a method of production of a silicon carbide single crystal.
摘要翻译：本发明提供一种高电阻率，高质量，大尺寸的SiC单晶，SiC单晶晶片及其制造方法，即含有原子序数密度为1×1015的未补偿杂质的碳化硅单晶 / cm3以上，并且含有小于所述未补偿杂质浓度的钒，通过加工和研磨碳化硅单晶而获得的碳化硅单晶晶片，室温下的电阻率为5×10 3Ωm·m以上，生产碳化硅单晶的方法。

13. 发明授权

US08044408B2 SiC single-crystal substrate and method of producing SiC single-crystal substrate 有权
标题翻译： SiC单晶衬底和SiC单晶衬底的制造方法
公开(公告)号：US08044408B2
公开(公告)日：2011-10-25
申请号：US12469299
申请日：2009-05-20
申请人： Tatsuo Fujimoto , Kohei Tatsumi , Taizo Hoshino , Masakazu Katsuno , Noboru Ohtani , Masashi Nakabayashi , Hiroshi Tsuge , Housei Hirano , Hirokatsu Yashiro
发明人： Tatsuo Fujimoto , Kohei Tatsumi , Taizo Hoshino , Masakazu Katsuno , Noboru Ohtani , Masashi Nakabayashi , Hiroshi Tsuge , Housei Hirano , Hirokatsu Yashiro
IPC分类号： H01L29/15
CPC分类号： H01L21/02378 , C30B23/00 , C30B29/36 , H01L21/02529 , H01L21/02631
摘要： The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.
摘要翻译：本发明提供一种高品质SiC单晶衬底，用于生产高质量SiC单晶衬底的晶种，以及制造高品质SiC单晶衬底的方法，其能够提高器件产量和稳定性。本发明提供一种SiC单晶基板，其中，当将SiC单晶基板分割为5mm见方的区域时，其位错对或位错列之间的位错端位置之间的间隔为5μm以下的区域存在于在基板表面处具有终点的位错占基板表面内所有这些区域的50％或更少，位错对或错位以外的位错基板中的位错密度为8,000 / cm 2。

14. 发明申请

US20110180765A1 MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARBIDE WAFER AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：单晶硅碳化硅，单晶硅碳化硅及其制造方法
公开(公告)号：US20110180765A1
公开(公告)日：2011-07-28
申请号：US13040783
申请日：2011-03-04
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： H01B1/04
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译：提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

15. 发明申请

US20100295059A1 SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRYSTAL SUBSTRATE 有权
标题翻译： SIC单晶衬底和生产SIC单晶衬底的方法
公开(公告)号：US20100295059A1
公开(公告)日：2010-11-25
申请号：US12469299
申请日：2009-05-20
申请人： Tatsuo FUJIMOTO , Kohei TATSUMI , Taizo HOSHINO , Masakazu KATSUNO , Noboru OHTANI , Masashi NAKABAYASHI , Hiroshi TSUGE , Housei HIRANO , Hirokatsu YASHIRO
发明人： Tatsuo FUJIMOTO , Kohei TATSUMI , Taizo HOSHINO , Masakazu KATSUNO , Noboru OHTANI , Masashi NAKABAYASHI , Hiroshi TSUGE , Housei HIRANO , Hirokatsu YASHIRO
IPC分类号： H01L29/24 , H01L21/20
CPC分类号： H01L21/02378 , C30B23/00 , C30B29/36 , H01L21/02529 , H01L21/02631
摘要： The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.
摘要翻译：本发明提供一种高品质SiC单晶衬底，用于生产高质量SiC单晶衬底的晶种，以及制造高品质SiC单晶衬底的方法，其能够提高器件产量和稳定性。本发明提供一种SiC单晶基板，其中，当将SiC单晶基板分割为5mm见方的区域时，其位错对或位错列之间的位错端位置之间的间隔为5μm以下的区域存在于在基板表面处具有终点的位错占基板表面内所有这些区域的50％或更少，位错对或错位以外的位错基板中的位错密度为8,000 / cm2。

16. 发明授权

US07799305B2 Silicon carbide single crystal and single crystal wafer 有权
标题翻译：碳化硅单晶和单晶晶片
公开(公告)号：US07799305B2
公开(公告)日：2010-09-21
申请号：US11629377
申请日：2005-06-15
申请人： Mitsuru Sawamura , Tatsuo Fujimoto , Noboru Ohtani , Masashi Nakabayashi
发明人： Mitsuru Sawamura , Tatsuo Fujimoto , Noboru Ohtani , Masashi Nakabayashi
IPC分类号： C30B29/36
CPC分类号： C30B23/00 , C30B29/36
摘要： The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more, and a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and vacancy pairs (bivacancies), and an semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and containing a crystal region where a position average lifetime becomes a lifetime longer than 155 ps in measurement of position lifetime at a liquid nitrogen boiling point temperature (77K) or less, and wafer obtained therefrom.According to the present invention, by having vacancy clusters including vacancy pairs, the electrical conductivity can be reduced even when the nitrogen concentration is higher than the boron concentration and, in addition, a semi-insulating SiC single crystal resistant to change of the electrical conductivity even with heat treatment can be obtained.
摘要翻译：本发明提供一种半绝缘性碳化硅单晶，其特征在于，室温下的电阻率为1×10 5Ω·cm以上，半绝缘性碳化硅单晶的特征在于，在室温下具有电阻率 1×10 5Ω·cm·cm以上以及空位对（bivacancies）和半绝缘性碳化硅单晶，其特征在于，室温下的电阻率为1×10 5Ω·cm以上，并且含有晶体区域，平均寿命在液氮沸点温度（77K）以下的位置寿命的测定以及从其获得的晶片的寿命长于155ps。根据本发明，通过具有包括空位对的空位簇，即使当氮浓度高于硼浓度时也可以降低电导率，另外还可以降低电导率的变化的半绝缘SiC单晶甚至可以获得热处理。

17. 发明申请

US20090255458A1 Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same 有权
标题翻译：碳化硅单晶，碳化硅单晶晶片及其制造方法
公开(公告)号：US20090255458A1
公开(公告)日：2009-10-15
申请号：US12455243
申请日：2009-05-29
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： C30B23/00
CPC分类号： C30B29/36 , C30B23/00
摘要： The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 Ωcm or more, and a method of production of a silicon carbide single crystal.
摘要翻译：本发明提供一种高电阻率，高质量，大尺寸的SiC单晶，SiC单晶晶片及其制造方法，即含有原子序数密度为1×10 15 / cm 3的未补偿杂质的碳化硅单晶以上，并且含有少于所述未补偿杂质浓度的钒，通过在室温下加工和研磨碳化硅单晶而获得的电阻率为5×10 3Ωcm以上的碳化硅单晶晶片，以及制造方法碳化硅单晶。

18. 发明申请

US20090205565A1 APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE 有权
标题翻译：制造单晶碳化硅的装置
公开(公告)号：US20090205565A1
公开(公告)日：2009-08-20
申请号：US12416500
申请日：2009-04-01
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
IPC分类号： C30B15/10
CPC分类号： C30B29/36 , C30B23/00 , C30B23/066 , C30B35/00 , Y10T117/1068
摘要： The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.
摘要翻译：本发明提供了一种用于稳定地制造质量好的单晶碳化硅而不形成裂纹等的装置，该装置包括：至少一个用于容纳碳化硅原料粉末和晶种的坩埚; 隔热材料安装在坩埚周围; 以及用于加热坩埚的加热装置，其中坩埚的外部轮廓包括至少一个比垂直相邻区域更窄直径的区域，绝缘材料也安装在留有直径差的空间中，绝缘材料的厚度在较窄直径区域处，比垂直相邻区域处的绝缘材料大。用于制造单晶碳化硅的装置能够精确地控制坩埚内的温度梯度，从而能够制造出优质的单晶碳化硅。

19. 发明申请

US20080038531A1 Silicon Carbide Single Crystal And Single Crystal Wafer 有权
标题翻译：碳化硅单晶和单晶硅片
公开(公告)号：US20080038531A1
公开(公告)日：2008-02-14
申请号：US11629377
申请日：2005-06-15
申请人： Mitsuru Sawamura , Tatsuo Fujimoto , Noboru Ohtani , Masashi Nakabayashi
发明人： Mitsuru Sawamura , Tatsuo Fujimoto , Noboru Ohtani , Masashi Nakabayashi
IPC分类号： C04B35/52
CPC分类号： C30B23/00 , C30B29/36
摘要： The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more, and a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and vacancy pairs (bivacancies), and an semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and containing a crystal region where a position average lifetime becomes a lifetime longer than 155 ps in measurement of position lifetime at a liquid nitrogen boiling point temperature (77K) or less, and wafer obtained therefrom. According to the present invention, by having vacancy clusters including vacancy pairs, the electrical conductivity can be reduced even when the nitrogen concentration is higher than the boron concentration and, in addition, a semi-insulating SiC single crystal resistant to change of the electrical conductivity even with heat treatment can be obtained.
摘要翻译：本发明提供一种半绝缘碳化硅单晶，其特征在于在室温下具有1×10 5Ω或更大的电阻率，以及半绝缘碳化硅单晶，其特征在于具有电阻率在室温下为1×10 5Ωm以上，空位对（双峰）和半绝缘碳化硅单晶，其特征在于室温下的电阻率为1×10 5 / >以上，并且在液氮沸点温度（77K）以下的位置寿命的测定以及从其获得的晶片的含有位置平均寿命长于155ps的寿命的晶体区域。根据本发明，通过具有包括空位对的空位簇，即使当氮浓度高于硼浓度时也可以降低电导率，另外还可以降低电导率的变化的半绝缘SiC单晶甚至可以获得热处理。

20. 发明授权

US4839790A Gas accident preventive unit 失效
标题翻译：燃气事故预防单位
公开(公告)号：US4839790A
公开(公告)日：1989-06-13
申请号：US105395
申请日：1987-10-05
申请人： Tatsuo Fujimoto , Tsutomu Ohya
发明人： Tatsuo Fujimoto , Tsutomu Ohya
IPC分类号： F16K17/20 , F17D5/02
CPC分类号： F17D5/02 , F16K17/20 , Y10S48/10
摘要： A gas accident preventive unit has a memory circuit which is capable of memorizing in advance a continuous service safety time according to a consumed gas volume of gas apparatuses that are installed at a gas user. The unit also includes a control circuit for sending out to an emergency shutoff valve, a close signal for cutting off the gas being supplied to the user in the event that any increase in gas flowrate is recognized in the previously measured value and the value measured this time by taking a measurement of the whole gas flowrate value being supplied to the gas user at a certain interval of time. The unit takes the measurement of continuous service hours on individual gas apparatuses or the gas apparatus having the largest gas consumption volume now under service, or responds to when the service of gas apparatus with the largest gas consumption volume being monitored has elapsed the continuous service safety time.
摘要翻译：燃气事故预防单元具有记忆电路，其能够根据安装在燃气用户处的燃气装置的消耗气体量预先记录持续的服务安全时间。该单元还包括用于发送到紧急截止阀的控制电路，用于在先前测量值中识别出气体流量的任何增加的情况下切断供给用户的气体的闭合信号，并且测量该值通过以一定的时间间隔测量供应给燃气用户的整个气体流量值的时间。该单位对已在使用中的最大气体消耗量的个别燃气设备或燃气设备进行连续工作时间的测量，或响应于当监测到具有最大气体消耗量的燃气设备的服务已经经过持续的服务安全时间。

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