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    • 11. 发明申请
    • MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE
    • 制造设备和半导体器件的方法
    • US20110092075A1
    • 2011-04-21
    • US12903384
    • 2010-10-13
    • Kunihiko SuzukiShinichi Mitani
    • Kunihiko SuzukiShinichi Mitani
    • H01L21/46
    • H01L21/02639C23C16/4584C23C16/4586C30B25/10H01L21/67109H01L21/68792
    • A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.
    • 半导体器件制造装置包括其中装载晶片的腔室; 用于将处理气体供应到所述室中的第一气体供应单元; 用于从所述室排出气体的排气单元; 其上放置晶片的晶片支撑构件; 其上放置有晶片支撑构件的环; 旋转驱动控制单元,连接到所述环以旋转晶片; 设置在所述环中并且包括用于将晶片加热到预定温度并且在至少一个表面上包括SiC层的加热器元件的加热器和与加热器元件整体模制并且包括至少一个SiC层的SiC层的加热器电极部分 表面; 以及用于将SiC源气体供给到所述环中的第二气体供给单元。
    • 14. 发明申请
    • VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
    • 蒸气相生长装置和蒸汽相生长方法
    • US20080236477A1
    • 2008-10-02
    • US12053657
    • 2008-03-24
    • Hideki ITOShinichi MITANI
    • Hideki ITOShinichi MITANI
    • C30B25/16C30B35/00
    • C30B25/10C23C16/4586C30B35/00Y10S117/90Y10T117/10Y10T117/1004Y10T117/1008
    • A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer.
    • 提供了一种提高膜形成均匀性的气相生长装置和气相生长方法。 气相生长装置包括:室,具有基座的可旋转保持器,内部加热器和外部加热器,其布置在保持器中并从底表面加热晶片;气体管,其布置成面对内部加热器 并喷射冷却气体,以及温度测量单元,其布置在室外并测量晶片的表面温度。 以这种方式,可以识别在晶片上产生的过热部分的单个温度点的位置。 温度的单个点被局部冷却,从而可以提高晶片的平面内的温度分布的均匀性。
    • 15. 发明申请
    • Brayton Cycle Device And Exhaust Heat Energy Recovery Device For Internal Combustion Engine
    • 用于内燃机的布雷顿循环装置和排气热能回收装置
    • US20070277522A1
    • 2007-12-06
    • US10589333
    • 2005-01-25
    • Masahiro OgawaShinichi MitaniAiko Sugiura
    • Masahiro OgawaShinichi MitaniAiko Sugiura
    • F01C13/04F01C1/02
    • F01C1/0223F01C11/004F01C11/008F04C18/0207
    • An exhaust heat energy recovery apparatus for an internal combustion engine that efficiently recovers exhaust heat energy without increasing engine exhaust back pressure, and a Brayton cycle apparatus applicable to the exhaust heat energy recovery apparatus. A Brayton cycle apparatus 1 using a scroll compressor 4 and a scroll expander 6 has a simplified and downsized structure. A working fluid is compressed inside a scroll compressor 4 and expanded inside a scroll expander 6 in spaces partitioned and sealed by combinations of fixed scrolls and orbital scrolls. The conversion efficiency from heat energy to kinetic energy is high. Heat is transferred from the exhaust to the working fluid through a pipe wall of a flow passage 30a and an expander case 12 of the scroll expander 6. This further downsizes the Brayton cycle apparatus 1. The back pressure of the energy source including the exhaust is unaffected.
    • 一种用于在不增加发动机排气背压的同时有效地回收排气热能的内燃机的排气热能回收装置,以及适用于排气热能回收装置的布雷顿循环装置。 使用涡旋压缩机4和涡旋式膨胀机6的布雷顿循环装置1具有简化且小型化的结构。 工作流体被压缩在涡旋压缩机4内部,并在涡卷膨胀器6内膨胀,在由固定涡卷和轨道涡卷的组合分隔和密封的空间中。 从热能到动能的转换效率高。 热量通过流路30a的管壁和涡卷膨胀机6的膨胀机壳体12从排气口传递到工作流体。 这进一步缩小了布雷顿循环设备1。 包括排气的能量源的背压不受影响。
    • 18. 发明授权
    • Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus
    • 减压外延生长装置及其控制方法
    • US06485573B2
    • 2002-11-26
    • US09855654
    • 2001-05-16
    • Katsuyuki IwataTadashi OhashiShyuji TobashiShinichi MitaniHideki AraiHideki Ito
    • Katsuyuki IwataTadashi OhashiShyuji TobashiShinichi MitaniHideki AraiHideki Ito
    • C23C1600
    • C23C16/45521C23C16/45557C23C16/4584C23C16/52C30B25/12C30B25/14
    • An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus. The apparatus comprises a purging gas introduction pipe 6 for purging the interior of the rotary mechanical portion, a purging gas exhaust pipe 7 for exhausting the gas introduced through the purging gas introduction pipe, a pressure adjusting valve 41 provided in the purging gas exhaust pipe, a pressure gauge 21 for detecting the pressure in the rotary mechanical portion, and an arithmetic/control unit 31 for executing an arithmetic operation based upon the detected pressure and for controlling the opening degree of the pressure adjusting valve 41 provided in the purging gas exhaust pipe, so that the pressure in the rotary mechanical portion assumes a proper value.
    • 一种通过抑制构成旋转机械部分的机器部件上的污染并通过将旋转机械部分中的压力维持在特定范围内来抑制半导体晶片上的污染物的减压气相外延生长装置,以及控制方法 上述装置。 该装置包括用于清洗旋转机械部分内部的净化气体引入管6,用于排出通过吹扫气体导入管引入的气体的净化气体排出管7,设置在净化气体排出管中的压力调节阀41, 用于检测旋转机械部分中的压力的​​压力计21以及用于基于检测到的压力执行算术运算并且用于控制设置在净化气体排出管中的压力调节阀41的开度的运算/控制单元31 ,使得旋转机械部分中的压力呈现适当的值。