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11. 发明授权

US4825270A Gate turn-off thyristor 失效
标题翻译：门极关断晶闸管
公开(公告)号：US4825270A
公开(公告)日：1989-04-25
申请号：US009479
申请日：1987-02-02
申请人： Yukimasa Satou , Tsutomu Yatsuo , Saburo Oikawa , Isamu Sanpei
发明人： Yukimasa Satou , Tsutomu Yatsuo , Saburo Oikawa , Isamu Sanpei
IPC分类号： H01L29/10 , H01L29/74 , H01L29/744
CPC分类号： H01L29/744 , H01L29/102 , H01L29/7428
摘要： The present invention relates to a buried gate type gate turn-off thyristor. A low-resistance layer which is buried in a cathode base layer has a multiplicity of small bores below a cathode emitter layer. The distance between each pair of adjacent small bores and the thickness of the low-resistance layer are each set so as to be smaller than the carrier diffusion length in an anode base layer. In an on-state, carries flow through the low-resistance layer, thereby allowing the low-resistance layer to become conductive, and thus lowering the on-state voltage. A reduction in the dimension of the small bores lowers the resistance of the low-resistance layer and hence lowers the gate drawing out resistance, so that the interrupting capacity is improved. When gate turn-off thyristor is arranged so as to have an amplifying gate structure, the distance between each pair of adjacent small bores in the amplifying auxiliary thyristor section is set so as to be greater than the carrier diffusion length in the anode base layer. In consequence, the on-state voltage in the auxiliary thyristor section is increased, so that the current selectively flows through the main thyristor section, and the auxiliary thyristor section automatically turns off. Accordingly, when the thyristor is to be turned off, it suffices to turn off the main thyristor section alone.
摘要翻译：本发明涉及一种埋栅式栅极截止晶闸管。埋在阴极基底层中的低电阻层在阴极发射极层下方具有多个小孔。每对相邻的小孔之间的距离和低电阻层的厚度各自设定为小于阳极基底层中的载流子扩散长度。在导通状态下，通过低电阻层流动，从而使低电阻层变得导电，从而降低导通电压。小孔的尺寸的减小降低了低电阻层的电阻，从而降低了栅极拉出电阻，从而提高了中断能力。当栅极截止晶闸管被布置成具有放大栅极结构时，放大辅助晶闸管部分中每对相邻的小孔之间的距离被设定为大于阳极基极层中的载流子扩散长度。因此，辅助晶闸管部分中的导通电压增加，使得电流选择性地流过主晶闸管部分，并且辅助晶闸管部分自动关闭。因此，当晶闸管关断时，只需断开主晶闸管部分即可。

12. 发明授权

US06750477B2 Static induction transistor 失效
标题翻译：静电感应晶体管
公开(公告)号：US06750477B2
公开(公告)日：2004-06-15
申请号：US10121623
申请日：2002-04-15
申请人： Tsutomu Yatsuo , Toshiyuki Ohno , Hidekatsu Onose , Saburo Oikawa
发明人： Tsutomu Yatsuo , Toshiyuki Ohno , Hidekatsu Onose , Saburo Oikawa
IPC分类号： H01L310312
CPC分类号： H01L29/7722 , H01L29/1608
摘要： In a static induction transistor, in addition to a first gate layer (4), a plurality of second gate layers (41) having a shallower depth and a narrower gap therebetween than those of the first gate layer (4) are provided in an area surrounded by the first gate layer (4), thereby an SiC static induction transistor with an excellent off characteristic is realized, while ensuring a required processing accuracy during production thereof.
摘要翻译：在静电感应晶体管中，除了第一栅极层（4）之外，还具有与第一栅极层（4）相比具有较浅深度和间隔更窄的多个第二栅极层（41）由第一栅极层（4）包围，从而实现具有优异的截止特性的SiC静态感应晶体管，同时确保其制造期间所需的加工精度。

13. 发明授权

US06226059B1 Active matrix display device using aluminum alloy in scanning signal line or video signal line 失效
标题翻译：主动矩阵显示装置采用铝合金扫描信号线或视频信号线
公开(公告)号：US06226059B1
公开(公告)日：2001-05-01
申请号：US09098541
申请日：1998-06-17
申请人： Hideaki Yamamoto , Haruo Matsumaru , Tetsuaki Suzuki , Mitsuo Nakatani , Michio Tsukii , Akira Sasano , Saburo Oikawa , Ryoji Oritsuki
发明人： Hideaki Yamamoto , Haruo Matsumaru , Tetsuaki Suzuki , Mitsuo Nakatani , Michio Tsukii , Akira Sasano , Saburo Oikawa , Ryoji Oritsuki
IPC分类号： G02F1136
CPC分类号： G02F1/136213 , G02F1/136286 , G02F2001/136295
摘要： An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al—Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to at least 1,000 angstroms. The fabrication yield and reliability can be improved.
摘要翻译：在扫描信号线和栅电极上形成有阳极氧化膜Al。 Al-Ta用作扫描信号线和栅电极的材料。阳极化氧化膜的厚度设定为至少1000埃。可以提高制造产量和可靠性。

14. 发明授权

US5589962A Active matrix display device using aluminum alloy in scanning signal line or video signal line 失效
标题翻译：主动矩阵显示装置采用铝合金扫描信号线或视频信号线
公开(公告)号：US5589962A
公开(公告)日：1996-12-31
申请号：US467967
申请日：1995-06-06
申请人： Hideaki Yamamoto , Haruo Matsumaru , Tetsuaki Suzuki , Mitsuo Nakatani , Michio Tsukii , Akira Sasano , Saburo Oikawa , Ryoji Oritsuki
发明人： Hideaki Yamamoto , Haruo Matsumaru , Tetsuaki Suzuki , Mitsuo Nakatani , Michio Tsukii , Akira Sasano , Saburo Oikawa , Ryoji Oritsuki
IPC分类号： G02F1/133 , G02F1/1333 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/136213 , G02F1/136286 , G02F2001/136295
摘要： An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. An alloy of Al containing Ta and Ti is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.
摘要翻译：在扫描信号线和栅电极上形成有阳极氧化膜Al。使用含有Ta和Ti的Al的合金作为扫描信号线和栅电极的材料。阳极化氧化膜的厚度设定为1000埃以上。可以提高制造产量和可靠性。

15. 发明授权

US4354121A Field controlled thyristor control circuit with additional FCT in reverse bias circuit 失效
标题翻译：具有反向偏置电路中附加FCT的场控晶闸管控制电路
公开(公告)号：US4354121A
公开(公告)日：1982-10-12
申请号：US284794
申请日：1981-07-10
申请人： Yoshio Terasawa , Kenji Miyata , Saburo Oikawa , Susumu Murakami , Masahiro Okamura , Takuzo Ogawa
发明人： Yoshio Terasawa , Kenji Miyata , Saburo Oikawa , Susumu Murakami , Masahiro Okamura , Takuzo Ogawa
IPC分类号： H01L27/08 , H01L29/739 , H02M1/08 , H03K17/04 , H03K17/12 , H03K17/72 , H03K17/73 , H03K17/60
CPC分类号： H01L29/7392 , H01L27/0817 , H02M1/08 , H03K17/0406 , H03K17/125 , H03K17/72
摘要： A switching control circuit includes a first field controlled thyristor having a gate and a cathode between which a backward bias voltage source and a second field controlled thyristor are connected in series. Conduction of the second field controlled thyristor is controlled by controlling a voltage applied across the gate and the cathode, thereby to control conduction of the first field controlled thyristor. A large load current can be positively and safely turned on and off by a relatively small control current or voltage.
摘要翻译：开关控制电路包括具有栅极和阴极的第一场控制晶闸管，在其间串联连接反向偏置电压源和第二场控制晶闸管。通过控制施加在栅极和阴极两端的电压来控制第二场控晶闸管的导通，从而控制第一场控制晶闸管的导通。通过相对较小的控制电流或电压可以正确安全地打开和关闭大负载电流。

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