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11. 发明申请

US20090265027A1 SERVER DEVICE AND PROGRAM 有权
标题翻译：服务器设备和程序
公开(公告)号：US20090265027A1
公开(公告)日：2009-10-22
申请号：US12375693
申请日：2007-07-09
申请人： Masashi Takahashi , Minoru Obata , Noriaki Koyama
发明人： Masashi Takahashi , Minoru Obata , Noriaki Koyama
IPC分类号： G06F19/00
CPC分类号： G05B21/02 , G05B23/0264 , H01L21/67757 , H01L21/67769 , H01L21/67772 , Y02P90/14 , Y02P90/18
摘要： A server device 12 constituting a group management system includes one or more manufacturing apparatuses 11 for performing a preset process on a target substrate, and the server device 12 includes a measurement information storage unit 1201 for storing therein one or more measurement information; an instruction receiving unit 1205 for receiving an output instruction of the measurement information, which contains information specifying a predetermined start point and valid time information; a measurement information acquisition unit 1203 for acquiring, from the measurement information storage unit 1201, measurement information ranging from the predetermined start point to a time point of the valid time; an output information composing unit 1206 for composing output information by using the acquired measurement information; and an output unit 1207 for outputting the output information composed by the output information composing unit 1206.
摘要翻译：构成组管理系统的服务器装置12包括用于在目标基板上执行预设处理的一个或多个制造装置11，并且服务器装置12包括用于在其中存储一个或多个测量信息的测量信息存储单元1201; 指令接收单元1205，用于接收包含指定预定起点和有效时间信息的信息的测量信息的输出指令; 测量信息获取单元1203，用于从测量信息存储单元1201获取从预定开始点到有效时间的时间点的测量信息; 输出信息组合单元1206，用于通过使用获取的测量信息来组合输出信息; 以及用于输出由输出信息组合单元1206组成的输出信息的输出单元1207。

12. 发明申请

US20080262791A1 Life estimating method for heater wire, heating apparatus, storage medium, and life estimating system for heater wire 有权
标题翻译：加热丝丝，加热装置，储存介质和加热丝寿命估算系统的寿命估算方法
公开(公告)号：US20080262791A1
公开(公告)日：2008-10-23
申请号：US12081404
申请日：2008-04-15
申请人： Nobutoshi Terasawa , Minoru Obata , Noriaki Koyama
发明人： Nobutoshi Terasawa , Minoru Obata , Noriaki Koyama
IPC分类号： G06F15/00
CPC分类号： F27B17/0025
摘要： A life estimating method for a heater wire, which can estimate the life of the heater wire more appropriately than conventional one, by utilizing data obtained during a period (e.g., a temperature rising period), in which a sign of disconnection of the heater wire is likely to be seen, upon estimating the life in advance before the heater wire used in a heating apparatus is disconnected. This method comprises the steps of: detecting a maximum value of magnitude of electric power supplied to the heater wire during the temperature rising period provided for elevating the temperature up to a heating temperature, by supplying the electric power to the heater wire prior to providing a heating process to a wafer or wafers. The method further comprises obtaining an index indicative of magnitude of amplitude of the electric power, and giving a notice that the heater wire is approaching the end of its life when the indexes respectively indicative of the magnitude of the electric power and the magnitude of amplitude of the electric power exceed threshold values respectively provided thereto.
摘要翻译：一种用于加热器线的寿命估计方法，其可以通过利用在一段时间（例如，升温时段）期间获得的数据，其比较常规的加热器丝的寿命更合适地估计加热器的寿命，其中加热器线断开的符号在加热装置中使用的加热丝线断开之前预先估计寿命是可能的。该方法包括以下步骤：在提供用于将温度升高至加热温度的温度上升期间期间，检测供应给加热丝的电力的最大值，通过在提供加热线之前向加热丝供电加热到晶片或晶圆。该方法还包括获得指示电力幅度大小的指标，并且当分别指示电力幅度和幅度幅度的指标时，给出加热器线接近其寿命结束的通知电功率超过分别提供给它的阈值。

13. 发明申请

US20070282554A1 INFORMATION PROCESSING APPARATUS, SEMICONDUCTOR MANUFACTURING SYSTEM, INFORMATION PROCESSING METHOD, AND STORAGE MEDIUM 有权
标题翻译：信息处理设备，半导体制造系统，信息处理方法和存储介质
公开(公告)号：US20070282554A1
公开(公告)日：2007-12-06
申请号：US11754643
申请日：2007-05-29
申请人： Noriaki KOYAMA , Minoru Obata , Wenling Wang
发明人： Noriaki KOYAMA , Minoru Obata , Wenling Wang
IPC分类号： G06F19/00
CPC分类号： G05B23/0221 , G05B2219/32184 , G05B2219/32192 , G05B2219/45031 , Y02P90/22
摘要： A information processing apparatus 100 for processing an acquired value, which is a value acquired in regard to a state during a treatment, performed by a semiconductor manufacturing apparatus 200 for performing a treatment on a treatment target containing a semiconductor according to a set value, which is a value for setting a condition of a treatment, includes: a set value receiving portion 101 for receiving the set value; a state value receiving portion 102 for receiving the acquired value; a correction amount calculating portion 103 for calculating a correction amount of the acquired value, using a correction function indicating a relationship between the set value and the acquired value; a correcting portion 104 for correcting the acquired value received by the state value receiving portion 102, using the correction amount calculated by the correction amount calculating portion 103; and an output portion 105 for outputting a result of correction performed by the correcting portion 104.
摘要翻译：一种信息处理设备100，用于处理获取值，该获取值是由处理期间的状态获取的值，由半导体制造设备200执行，用于根据设定值对包含半导体的处理对象进行处理，是用于设定治疗条件的值，包括：用于接收设定值的设定值接收部101; 用于接收所获取的值的状态值接收部分102; 校正量计算部分103，用于使用指示设定值和获取值之间的关系的校正函数来计算获取值的校正量; 校正部分104，用于使用由校正量计算部分103计算的校正量来校正由状态值接收部分102接收到的获取值; 以及输出部分105，用于输出校正部分104执行的校正结果。

14. 发明授权

US5466691A Thiophene compound 失效
标题翻译：噻吩化合物
公开(公告)号：US5466691A
公开(公告)日：1995-11-14
申请号：US039100
申请日：1993-03-30
申请人： Tohru Nakao , Yuji Ono , Hiroshi Tanaka , Minoru Obata , Yasuto Morimoto
发明人： Tohru Nakao , Yuji Ono , Hiroshi Tanaka , Minoru Obata , Yasuto Morimoto
IPC分类号： C07D333/20 , C07D333/34 , C07D333/36 , C07D409/06 , C07D409/12 , C07D409/14 , C07D413/14 , C07D417/12 , C07D417/14 , C07D471/20 , C07D495/04 , C07D409/00 , A61K31/445 , A61K31/495 , C07D411/00 , C07D419/00
CPC分类号： C07D409/06 , C07D333/20 , C07D333/34 , C07D333/36 , C07D409/12 , C07D409/14 , C07D413/14 , C07D417/12 , C07D417/14 , C07D495/04
摘要： Thiophene compounds of the formula ##STR1## wherein each symbol is as defined in the specification, their pharmaceutically acceptable salts, pharmaceutical compositions containing said compound and additives for pharmaceuticals, and antipsychotics containing said compound as an active ingredient.The compound of the present invention has pharmacological actions required of antipsychotic, such as motility suppressing action, anti-apomorphine action, mothamphetamine antagonistic action, tetrabenazine-induced blepharoptosis enhancing action, and the like. The compound of the present invention is useful as an antipsychotic having less extrapyramidal side-effects or a non-benzodiazepine type antianxiety agent.
摘要翻译： PCT No.PCP / JP92 / 01002 Sec。 371日期1993年3月30日 102（e）1993年3月30日PCT提交1992年8月5日PCT公布。出版物WO93 / 03025 日期：1993年2月18日。式（I）的噻吩化合物，其中每个符号如说明书中所定义，其药学上可接受的盐，含有所述化合物的药物组合物和药物添加剂以及含有所述化合物作为抗生素的抗精神病药有效成分。本发明的化合物具有抗精神病药所需的药理作用，例如运动抑制作用，抗阿朴吗啡作用，安非他明拮抗作用，丁苯那嗪诱导的睑下垂增生作用等。本发明的化合物可用作具有较少锥体束外副作用的抗精神病药或非苯并二氮类抗焦虑剂。

15. 发明授权

US5418071A Sputtering target and method of manufacturing the same 失效
标题翻译：溅射靶及其制造方法
公开(公告)号：US5418071A
公开(公告)日：1995-05-23
申请号：US12845
申请日：1993-02-04
申请人： Michio Satou , Takashi Yamanobe , Takashi Ishigami , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Minoru Obata , Shigeru Ando
发明人： Michio Satou , Takashi Yamanobe , Takashi Ishigami , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Minoru Obata , Shigeru Ando
IPC分类号： B22F3/14 , C04B35/58 , C22C1/05 , C23C14/06 , C23C14/34 , H01L21/28 , H01L21/285 , B22F7/06
CPC分类号： C04B35/58085 , C04B35/58092 , C04B35/645 , C04B35/65 , C23C14/3414 , Y10T428/12014 , Y10T428/12028 , Y10T428/12049 , Y10T428/12056
摘要： In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.
摘要翻译：在本发明中，金属硅化物晶粒形成金属硅化物相的互连结构，形成Si相的Si晶粒不连续地分散在金属硅化物相之间，以提供具有高密度二相结构的溅射靶，并具有铝含量为1ppm以下。由于目标的高密度和高强度，溅射期间从目标产生颗粒减少，并且由于靶的碳含量降低，可以防止在溅射期间将碳混入薄膜中。

16. 发明授权

US5196916A Highly purified metal material and sputtering target using the same 失效
标题翻译：使用相同的高纯度金属材料和溅射目标
公开(公告)号：US5196916A
公开(公告)日：1993-03-23
申请号：US655950
申请日：1991-02-15
申请人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
发明人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
IPC分类号： C22B9/22 , C22B34/10 , C22B34/12 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532
CPC分类号： C22B34/1272 , C22B34/10 , C22B34/129 , C22B34/1295 , C22B9/22 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002
摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.

17. 发明授权

US5184888A Illuminating portion of vanity mirror 失效
标题翻译：透明镜的照明部分
公开(公告)号：US5184888A
公开(公告)日：1993-02-09
申请号：US607449
申请日：1990-10-31
申请人： Toranosuke Sakuma , Minoru Obata
发明人： Toranosuke Sakuma , Minoru Obata
IPC分类号： B60J3/02 , B60Q3/00 , B60Q3/02 , F21V8/00 , G02B6/00
CPC分类号： B60Q3/0226 , B60J3/0282 , B60Q3/004 , G02B6/0086 , G02B6/003 , G02B6/0031 , G02B6/0036 , G02B6/0046 , G02B6/0095
摘要： An illuminating portion of a vanity mirror device disposed in a recessed portion in a body of the vanity mirror device and at one side of a mirror. A light conducting plate formed of a transparent material is fitted in the recessed portion and the front surface of the light conducting plate is located flush with the front surface of the body. And an electric bulb is located to oppose one of end surfaces of the light conducting plate.
摘要翻译：梳妆镜装置的照明部分设置在梳妆镜装置的主体的凹陷部分和反射镜的一侧。由透明材料形成的导光板装配在凹部中，导光板的前表面与本体的前表面齐平。并且电灯被定位成与导光板的一个端面相对。

18. 发明申请

US20110035165A1 INFORMATION PROCESSING APPARATUS, SEMICONDUCTOR MANUFACTURING SYSTEM, INFORMATION PROCESSING METHOD, AND STORAGE MEDIUM 审中-公开
标题翻译：信息处理设备，半导体制造系统，信息处理方法和存储介质
公开(公告)号：US20110035165A1
公开(公告)日：2011-02-10
申请号：US12907716
申请日：2010-10-19
申请人： Noriaki KOYAMA , Minoru Obata , Wenling Wang
发明人： Noriaki KOYAMA , Minoru Obata , Wenling Wang
IPC分类号： G06F17/18 , G06F15/00 , G01F1/00 , G01K13/00 , G01L7/00
CPC分类号： G05B23/0221 , G05B2219/32184 , G05B2219/32192 , G05B2219/45031 , Y02P90/22
摘要： A information processing apparatus 100 for processing an acquired value, which is a value acquired in regard to a state during a treatment, performed by a semiconductor manufacturing apparatus 200 for performing a treatment on a treatment target containing a semiconductor according to a set value, which is a value for setting a condition of a treatment, includes: a set value receiving portion 101 for receiving the set value; a state value receiving portion 102 for receiving the acquired value; a correction amount calculating portion 103 for calculating a correction amount of the acquired value, using a correction function indicating a relationship between the set value and the acquired value; a correcting portion 104 for correcting the acquired value received by the state value receiving portion 102, using the correction amount calculated by the correction amount calculating portion 103; and an output portion 105 for outputting a result of correction performed by the correcting portion 104.
摘要翻译：一种信息处理设备100，用于处理获取值，该获取值是由处理期间的状态获取的值，由半导体制造设备200执行，用于根据设定值对包含半导体的处理对象进行处理，是用于设定治疗条件的值，包括：用于接收设定值的设定值接收部101; 用于接收所获取的值的状态值接收部分102; 校正量计算部分103，用于使用指示设定值和获取值之间的关系的校正函数来计算获取值的校正量; 校正部分104，用于使用由校正量计算部分103计算的校正量来校正由状态值接收部分102接收到的获取值; 以及输出部分105，用于输出校正部分104执行的校正结果。

19. 发明授权

US07751921B2 Semiconductor manufacturing apparatus, method of detecting abnormality, identifying cause of abnormality, or predicting abnormality in the semiconductor manufacturing apparatus, and storage medium storing computer program for performing the method 有权
标题翻译：半导体制造装置，检测异常的方法，识别异常原因或预测半导体制造装置中的异常，以及存储用于执行该方法的计算机程序的存储介质
公开(公告)号：US07751921B2
公开(公告)日：2010-07-06
申请号：US11794374
申请日：2005-12-22
申请人： Koichi Sakamoto , Minoru Obata , Noriaki Koyama
发明人： Koichi Sakamoto , Minoru Obata , Noriaki Koyama
IPC分类号： G06F19/00 , G06F11/30
CPC分类号： C23C16/4412 , C23C16/52 , G05B23/0235 , H01L21/67288
摘要： In order to detect an abnormality of semiconductor manufacturing apparatus, a biaxial coordinate system having first and second axes respectively assigned two different monitoring parameters selected from plural apparatus status parameters representing statuses of semiconductor manufacturing apparatus is prepared. As monitoring parameters, for example, a cumulative film thickness for deposition processes that have previously been performed in deposition apparatus and an opening of the pressure control valve located in a vacuum exhaust path to control the internal pressure of a reaction vessel are selected. Values of monitoring parameters obtained when the semiconductor manufacturing apparatus was normally operating are plotted on the biaxial coordinate system. A boundary between a normal condition and an abnormality status is set around a plot group. Values of monitoring parameters obtained during present operation of the semiconductor manufacturing apparatus are plotted on the biaxial coordinate system to determine whether or not there exists an abnormality and identify a type of abnormality based on a positional relation between the plots and the boundary.
摘要翻译：为了检测半导体制造装置的异常，准备了具有第一和第二轴的双轴坐标系分别分配了从表示半导体制造装置的状态的多个装置状态参数中选择的两个不同的监视参数。作为监测参数，例如，选择先前在沉积设备中执行的沉积工艺的累积膜厚度和位于真空排气路径中的压力控制阀的打开以控制反应容器的内部压力。在半导体制造装置正常工作时获得的监视参数的值被绘制在双轴坐标系上。围绕绘图组设定正常状态与异常状态之间的边界。在双轴坐标系上绘制在半导体制造装置的当前操作期间获得的监视参数的值，以基于图和边界之间的位置关系确定是否存在异常并识别异常的类型。

20. 发明授权

US5458697A Highly purified metal material and sputtering target using the same 失效
标题翻译：高纯金属材料和使用其的溅射靶
公开(公告)号：US5458697A
公开(公告)日：1995-10-17
申请号：US351542
申请日：1994-12-07
申请人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
发明人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
IPC分类号： C22B9/22 , C22B34/10 , C22B34/12 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L21/477
CPC分类号： C22B34/1272 , C22B34/10 , C22B34/129 , C22B34/1295 , C22B9/22 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002
摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.
摘要翻译：这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。高纯度金属的Al含量不大于10ppm。氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

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