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11. 发明授权

US6110751A Tunnel junction structure and its manufacture and magnetic sensor 失效
标题翻译：隧道结结构及其制造和磁传感器
公开(公告)号：US6110751A
公开(公告)日：2000-08-29
申请号：US57194
申请日：1998-04-08
申请人： Masashige Sato , Hideyuki Kikuchi , Kazuo Kobayashi
发明人： Masashige Sato , Hideyuki Kikuchi , Kazuo Kobayashi
IPC分类号： G01R33/09 , G11B5/00 , G11B5/012 , G11B5/33 , G11B5/39 , H01F10/32 , H01F41/30 , H01L43/08 , H01L21/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/00 , G11B5/012 , G11B5/332 , G11B5/3903 , H01F10/3254 , H01F41/307 , H01L43/08 , G11B2005/3996 , G11B5/3967 , H01F10/3295
摘要： A tunnel junction structure is provided. A first magnetic layer is formed on a support substrate. A tunnel insulating layer is disposed on the first magnetic layer, the tunnel insulating layer containing a metal element as a constituent. A second magnetic layer is disposed on the tunnel insulating layer. A diffusion preventing layer disposed between the first magnetic layer and the tunnel insulating layer. The diffusion preventing layer suppresses mutual diffusion between metal atoms in the first magnetic layer and metal atoms in the tunnel insulating layer. The tunnel insulating layer and the diffusion preventing layer each have a thickness allowing tunnel current to flow between the first and second magnetic layers.
摘要翻译：提供隧道结结构。在支撑基板上形成第一磁性层。隧道绝缘层设置在第一磁性层上，隧道绝缘层包含金属元素作为组成。第二磁性层设置在隧道绝缘层上。布置在第一磁性层和隧道绝缘层之间的防扩散层。扩散防止层抑制第一磁性层中的金属原子与隧道绝缘层中的金属原子之间的相互扩散。隧道绝缘层和扩散防止层各自具有允许隧道电流在第一和第二磁性层之间流动的厚度。

12. 发明授权

US08514527B2 Magnetoresistive effect head having a multilayered pinned layer and/or free layer having amorphous and crystalline layers, and systems thereof 有权
标题翻译：具有多层被钉扎层和/或具有无定形和结晶层的自由层的磁阻效应头及其系统
公开(公告)号：US08514527B2
公开(公告)日：2013-08-20
申请号：US12955767
申请日：2010-11-29
申请人： Kojiro Komagaki , Katsumi Hoshino , Masashige Sato , Hiroyuki Hoshiya
发明人： Kojiro Komagaki , Katsumi Hoshino , Masashige Sato , Hiroyuki Hoshiya
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/132 , H01F10/3254 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.
摘要翻译：根据一个实施例，磁阻效应头包括具有被钉扎的磁化方向的磁性钉扎层，位于磁性钉扎层上方的自由磁性层，具有可自由变化的磁化方向的自由磁性层，以及阻挡层，其包括定位在所述磁性被钉扎层和所述自由磁性层之间的绝缘体，其中所述磁性钉扎层和所述自由磁性层中的至少一个具有层状结构，所述层状结构包括晶体层，所述晶体层包括以下之一：CoFe 磁性层或CoFeB磁性层以及包含CoFeB和选自Ta，Hf，Zr和Nb的元素的非晶磁性层，其中所述晶体层位于比非晶磁性层更靠近隧道势垒层。在另一个实施例中，磁数据存储系统包括上述磁阻效应头。

13. 发明申请

US20100159283A1 MAGNETIC STORAGE MEDIUM, MANUFACTURING METHOD OF MAGNETIC STORAGE MEDIUM, AND INFORMATION STORAGE DEVICE 审中-公开
标题翻译：磁性储存介质，磁性储存介质的制造方法和信息存储装置
公开(公告)号：US20100159283A1
公开(公告)日：2010-06-24
申请号：US12582306
申请日：2009-10-20
申请人： Takahiro IBUSUKI , Masashige SATO
发明人： Takahiro IBUSUKI , Masashige SATO
IPC分类号： G11B5/66 , B05D5/12
CPC分类号： G11B5/66 , G11B5/667
摘要： A magnetic storage medium includes a substrate, a first magnetic layer film that is deposited on the substrate, and a second magnetic layer film that is a cap layer of the first magnetic layer film. The first magnetic layer film contains a high magnetic anisotropic material and a low-temperature diffusion material which is added to the high magnetic anisotropic material, the low-temperature diffusion material starting diffusion by thermal treatment at a lower temperature than that of the high magnetic anisotropic material. The second magnetic layer film includes a material for promoting diffusion of the low-temperature diffusion material.
摘要翻译：磁性存储介质包括基板，沉积在基板上的第一磁性层膜和作为第一磁性层膜的盖层的第二磁性层膜。第一磁性层膜包含高磁性各向异性材料和低温扩散材料，其被加入到高磁各向异性材料中，低温扩散材料通过热处理开始扩散，温度低于高磁各向异性材料材料。第二磁性层膜包括促进低温扩散材料扩散的材料。

14. 发明申请

US20080232003A1 MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC LAMINATION STRUCTURAL BODY, AND MANUFACTURE METHOD FOR MAGNETIC LAMINATION STRUCTURAL BODY 有权
标题翻译：磁阻效应装置，磁性层压结构体和磁性层压结构体的制造方法
公开(公告)号：US20080232003A1
公开(公告)日：2008-09-25
申请号：US12041396
申请日：2008-03-03
申请人： Takahiro IBUSUKI , Masashige SATO , Shinjiro UMEHARA
发明人： Takahiro IBUSUKI , Masashige SATO , Shinjiro UMEHARA
IPC分类号： G11B5/33 , C23C14/00
CPC分类号： G11B5/3967 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11C11/15 , G11C11/16 , H01L43/08 , H01L43/12
摘要： An underlying layer (2) made of NiFeN is disposed over the principal surface of a substrate. A pinning layer (3) made of antiferromagnetic material containing Ir and Mn is disposed on the underlying layer. A reference layer (4c) made of ferromagnetic material whose magnetization direction is fixed through exchange-coupling with the pinning layer directly or via another ferromagnetic material layer, is disposed over the pinning layer. A nonmagnetic layer (7) made of nonmagnetic material is disposed over the reference layer. A free layer (8) made of ferromagnetic material whose magnetization direction changes in dependence upon an external magnetic field, is disposed over the nonmagnetic layer.
摘要翻译：由NiFeN制成的下层（2）设置在基板的主表面上。由含有Ir和Mn的反铁磁材料制成的钉扎层（3）设置在下层上。由铁磁材料制成的参考层（4c）通过与钉扎层直接或通过另一铁磁材料层的交换耦合而固定其磁化方向，设置在钉扎层之上。由非磁性材料制成的非磁性层（7）设置在参考层上。由铁磁材料制成的自由层（8），其磁化方向根据外部磁场而变化，设置在非磁性层上。

15. 发明授权

US07221547B2 Magnetoresistive effect element, a magnetic head, and a magnetic reproducing apparatus therewith 失效
标题翻译：磁阻效应元件，磁头及其磁性重放装置
公开(公告)号：US07221547B2
公开(公告)日：2007-05-22
申请号：US10465820
申请日：2003-06-19
申请人： Yiqun Zhang , Hideyuki Kikuchi , Masashige Sato , Kazuo Kobayashi , Hitoshi Kanai
发明人： Yiqun Zhang , Hideyuki Kikuchi , Masashige Sato , Kazuo Kobayashi , Hitoshi Kanai
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3143 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , H01F10/3295 , H01L43/08
摘要： A magnetoresistive effect element is a compound lamination including a first anti-ferromagnetic layer, a first fixed magnetic layer, a tunnel insulation layer, a free magnetic layer, a non-magnetic metal layer, a second fixed magnetic layer, and a second anti-ferromagnetic layer such that a TMR element and a SVMR element are formed, sharing the free magnetic layer.
摘要翻译：磁阻效应元件是包括第一反铁磁层，第一固定磁性层，隧道绝缘层，自由磁性层，非磁性金属层，第二固定磁性层和第二抗铁磁性层的复合层压体，铁磁层，使得形成TMR元件和SVMR元件，共享自由磁性层。

16. 发明授权

US07199985B1 Magnetic sensor, magnetic head, magnetic encoder and hard disk device 失效
标题翻译：磁传感器，磁头，磁编码器和硬盘设备
公开(公告)号：US07199985B1
公开(公告)日：2007-04-03
申请号：US09581468
申请日：2000-06-12
申请人： Masashige Sato , Hideyuki Kikuchi , Kazuo Kobayashi
发明人： Masashige Sato , Hideyuki Kikuchi , Kazuo Kobayashi
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11B5/012 , G11B5/3903 , G11B2005/3996
摘要： A magnetic sensor including a ferromagnetic tunnel junction, comprises a free layer 10 a magnetic direction of which freely rotates, and a barrier layer 11 formed on the free layer and reduces a thickness in a first region, the free layer in a region corresponding to the first region functioning as a sensor portion for sensing an external magnetic field. Such magnetic sensor can provide magnetic sensors, magnetic heads and magnetic encoders having high sensitivity. Furthermore, such magnetic sensor can provide magnetic heads which are adaptable to high recording density of magnetic storage mediums, and hard disk devices of large storage capacities using the magnetic heads.
摘要翻译：包括铁磁隧道结的磁传感器包括其自由旋转的磁方向的自由层10和形成在自由层上的阻挡层11，并减小第一区域中的厚度，对应于第一区域的区域中的自由层第一区域用作感测外部磁场的传感器部分。这种磁传感器可以提供具有高灵敏度的磁传感器，磁头和磁编码器。此外，这种磁传感器可以提供适用于磁存储介质的高记录密度的磁头和使用磁头的大存储容量的硬盘装置。

17. 发明授权

US06903400B2 Magnetoresistive memory apparatus 失效
标题翻译：磁阻存储装置
公开(公告)号：US06903400B2
公开(公告)日：2005-06-07
申请号：US10788319
申请日：2004-03-01
申请人： Hideyuki Kikuchi , Masashige Sato , Kazuo Kobayashi
发明人： Hideyuki Kikuchi , Masashige Sato , Kazuo Kobayashi
IPC分类号： H01L27/105 , H01L21/8246 , H01L21/8247 , H01L27/22 , H01L29/76 , H01L31/062 , H01L43/08
CPC分类号： B82Y10/00 , H01L27/228
摘要： A magnetoresistive memory apparatus with a semiconductor substrate having a plurality of intersecting, non-contacting word lines and bit lines constituting a matrix, and a plurality of ferromagnetic tunnel junction devices located adjacent each intersection of the plurality of lines, each junction device having, disposed one upon another via insulating layers, free layers having variable magnetization directions and fixed magnetization layers having fixed magnetization directions, with magnetized information being written to the memory device at an intersection selected by magnetization electric currents supplied to the lines, the magnetized information read out by detecting the resistance variance of electric currents flowing through the memory device due to the tunnel effect. The plurality of junction devices deviate from the intersections of the plurality of lines, and between the lines are non-contacting free layer extended portions being extensions from only the free layer, to shorten the interval there between.
摘要翻译：一种具有半导体衬底的磁阻存储器件，具有多个相交的非接触字线和构成矩阵的位线，以及多个铁磁隧道结器件，位于多条线的每个交叉点附近，每个接合器件都具有通过绝缘层，具有可变磁化方向的自由层和具有固定磁化方向的固定磁化层彼此依次通过磁化信息在由提供给线路的磁化电流选择的交点处被写入存储器件中，磁化信息由检测由于隧道效应而流过存储器件的电流的电阻方差。多个接合装置偏离多个线路的交叉点，并且线路之间的非接触自由层延伸部分仅从自由层延伸，以缩短其间的间隔。

18. 发明授权

US08570691B2 TMR sensor film using a tantalum insertion layer and systems thereof 有权
标题翻译：使用钽插入层的TMR传感器膜及其系统
公开(公告)号：US08570691B2
公开(公告)日：2013-10-29
申请号：US13082098
申请日：2011-04-07
申请人： Masashige Sato , Kojiro Komagaki
发明人： Masashige Sato , Kojiro Komagaki
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909
摘要： In one embodiment, a tunnel magnetoresistance (TMR) head includes a lead layer above a substrate, a seed layer above the lead layer, an antiferromagnetic (AFM) layer above the seed layer, a first ferromagnetic layer above the AFM layer, a second ferromagnetic layer above the first ferromagnetic layer, a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer, a fixed layer above the second ferromagnetic layer, an insertion layer adjacent the fixed layer or in the fixed layer, a barrier layer above the fixed layer, a free layer above the barrier layer, and a cap layer above the free layer. In another embodiment, the insertion layer is from about 0.05 nm to 0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB.
摘要翻译：在一个实施例中，隧道磁阻（TMR）头包括衬底上的引线层，引线层上的晶种层，种子层上方的反铁磁（AFM）层，AFM层上方的第一铁磁层，第二铁磁在所述第一铁磁层之上的层，在所述第一和第二铁磁层之间的耦合层，所述耦合层引起所述第二铁磁层的磁化耦合到所述第一铁磁层的磁化，所述第二铁磁层上方的固定层，与固定层或固定层相邻的插入层，固定层上方的阻挡层，阻挡层上方的自由层以及自由层上方的覆盖层。在另一个实施例中，插入层的厚度为约0.05nm至0.3nm，并且包括Ta，Ti，Hf和/或Zr，并且自由层包括CoFeB。

19. 发明申请

US20110164448A1 Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device 有权
标题翻译：隧道磁阻（TMR）器件，其制造方法，磁头和使用TMR器件的磁存储器
公开(公告)号：US20110164448A1
公开(公告)日：2011-07-07
申请号：US13046567
申请日：2011-03-11
申请人： Masashige Sato , Shinjiro Umehara , Takahiro Ibusuki
发明人： Masashige Sato , Shinjiro Umehara , Takahiro Ibusuki
IPC分类号： G11C11/00 , G11B5/33 , G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.
摘要翻译：阻挡层设置在由具有固定的磁化方向的铁磁材料制成的被钉扎层上，阻挡层具有允许电子通过隧道现象透过的厚度。第一自由层设置在阻挡层上，第一自由层由在外部磁场下改变磁化方向的非晶或细晶体软磁材料制成。第二自由层设置在第一自由层之上，第二自由层由结晶软磁材料制成，其在外部磁场下改变磁化方向并与第一自由层交换耦合。提供了具有良好磁特性并能够抑制隧道电阻变化率降低的隧道磁阻装置。

20. 发明申请

US20100284103A1 MAGNETORESISTIVE EFFECT DEVICE, MAGNETIC HEAD, AND INFORMATION STORAGE APPARATUS 有权
标题翻译：磁阻效应装置，磁头和信息存储装置
公开(公告)号：US20100284103A1
公开(公告)日：2010-11-11
申请号：US12842447
申请日：2010-07-23
申请人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
发明人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
IPC分类号： G11B5/127 , G11B20/10
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01L27/228 , H01L43/10
摘要： A magnetoresistive effect device includes an underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer which are multilayered in this order on a substrate. The underlayer is formed of a metal nitride, and the antiferromagnetic layer is formed of an antiferromagnetic material including Ir and Mn.
摘要翻译：磁阻效应器件包括在衬底上依次层叠的底层，反铁磁层，第一铁磁层，非磁性层和第二铁磁层。底层由金属氮化物形成，反铁磁层由包含Ir和Mn的反铁磁材料形成。

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