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11. 发明授权

US06504176B2 Field effect transistor and method of manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US06504176B2
公开(公告)日：2003-01-07
申请号：US09824922
申请日：2001-04-03
申请人： Makoto Kitabatake , Toshiya Yokogawa , Osamu Kusumoto , Masao Uchida , Kunimasa Takahashi
发明人： Makoto Kitabatake , Toshiya Yokogawa , Osamu Kusumoto , Masao Uchida , Kunimasa Takahashi
IPC分类号： H01L310317
CPC分类号： H01L29/0634 , H01L29/0696 , H01L29/0847 , H01L29/1095 , H01L29/1608 , H01L29/20 , H01L29/66068 , H01L29/66712 , H01L29/7802 , H01L29/7813
摘要： There are provided a field effect transistor with a high withstand voltage and low loss and a method of manufacturing the same. The field effect transistor includes an n-type substrate, an n-type semiconductor layer formed on the n-type substrate, a p-type semiconductor layer formed on the n-type semiconductor layer, a p-type region embedded in the n-type semiconductor layer, an n-type region embedded in the n-type semiconductor layer and the p-type semiconductor layer, an n-type source region disposed in the p-type semiconductor layer on its surface side, an insulating layer disposed on the p-type semiconductor layer, a gate electrode disposed on the insulating layer, a source electrode, and a drain electrode. The n-type semiconductor layer, the p-type semiconductor layer, and the p-type region are made of wide-gap semiconductors with a bandgap of at least 2 eV, respectively.
摘要翻译：提供具有高耐受电压和低损耗的场效应晶体管及其制造方法。场效应晶体管包括n型衬底，形成在n型衬底上的n型半导体层，形成在n型半导体层上的p型半导体层，嵌入在n型衬底中的p型区域，埋入n型半导体层和p型半导体层的n型区域，在其表面侧配置在p型半导体层中的n型源极区域，设置在p型半导体层上的绝缘层 p型半导体层，设置在绝缘层上的栅电极，源电极和漏电极。 n型半导体层，p型半导体层和p型区域分别由具有至少2eV的带隙的宽间隙半导体制成。

12. 发明授权

US06350999B1 Electron-emitting device 失效
标题翻译：电子发射器件
公开(公告)号：US06350999B1
公开(公告)日：2002-02-26
申请号：US09449525
申请日：1999-11-29
申请人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
发明人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
IPC分类号： H01L310328
CPC分类号： H01J1/308
摘要： In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.
摘要翻译：在电子发射器件中，用于提供电子的电子供应层由n-GaN层组成。用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂（本征）Al x Ga 1-x N（0 <= x <= 1）组成。表面层由具有负电子亲和力（NEA）的非掺杂AlN组成。由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙，接近零的负电子亲和力或正电子亲和力。如果施加使表面电极侧为正的电压V，则Al x Ga 1-x N的带被弯曲，主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。由此获得优异的电子发射特性。

13. 发明授权

US06273950B1 SiC device and method for manufacturing the same 失效
标题翻译： SiC器件及其制造方法
公开(公告)号：US06273950B1
公开(公告)日：2001-08-14
申请号：US09753412
申请日：2001-01-02
申请人： Makoto Kitabatake
发明人： Makoto Kitabatake
IPC分类号： C30B2502
CPC分类号： H01L29/872 , C30B29/36 , C30B33/00 , H01L21/0445 , H01L21/0475 , H01L21/0485 , H01L21/0495 , H01L29/1608 , H01L29/267 , H01L29/45 , H01L29/47
摘要： A method for manufacturing a device of silicon carbide (SiC) and a single crystal thin film, which are wide band gap semiconductor materials and can be applied to semiconductor devices such as high power devices, high temperature devices, and environmentally resistant devices, is provided by heating a silicon carbide crystal in an oxygen atmosphere to form a silicon (di)oxide thin film on a silicon carbide crystal surface, and etching the silicon (di)oxide thin film formed on the silicon carbide crystal surface to prepare a clean SiC surface. The above SiC device comprises a clean surface having patterned steps and terraces, has a surface defect density of 108 cm−2 or less, or has at least a layered structure in which an n-type silicon carbide crystal is formed on an n-type Si substrate surface.
摘要翻译：提供了一种制造宽带隙半导体材料的碳化硅（SiC）和单晶薄膜的器件的方法，可以应用于诸如大功率器件，高温器件和耐环境器件的半导体器件通过在氧气氛中加热碳化硅晶体以在碳化硅晶体表面上形成硅（di）氧化物薄膜，并蚀刻形成在碳化硅晶体表面上的硅（di）氧化物薄膜，以制备清洁的SiC表面。上述SiC器件包括具有图案化台阶和台阶的清洁表面，其表面缺陷密度为108cm -2以下，或至少具有在n型上形成n型碳化硅晶体的层状结构 Si衬底表面。

14. 发明授权

US5814194A Substrate surface treatment method 失效
标题翻译：基材表面处理方法
公开(公告)号：US5814194A
公开(公告)日：1998-09-29
申请号：US542008
申请日：1995-10-12
申请人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
发明人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
IPC分类号： C30B33/00 , C30B33/12
CPC分类号： C30B33/00 , C30B29/04 , H01J2237/0812 , Y10T428/24355 , Y10T428/24479 , Y10T428/30
摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.
摘要翻译：包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。具有一定能量的簇粒子被照射到金刚石的表面上。辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。因此，金刚石的表面被有效地平滑和蚀刻。

15. 发明授权

US5605860A Method of fabricating semiconductor thin film and method of fabrication Hall-effect device 失效
标题翻译：制造半导体薄膜的方法及其制作方法霍尔效应器件
公开(公告)号：US5605860A
公开(公告)日：1997-02-25
申请号：US374207
申请日：1995-01-18
申请人： Tetuo Kawasaki , Tetuhiro Koretika , Makoto Kitabatake , Takasi Hirao
发明人： Tetuo Kawasaki , Tetuhiro Koretika , Makoto Kitabatake , Takasi Hirao
IPC分类号： H01L21/20 , H01L43/06 , H01L43/08
CPC分类号： H01L43/08 , H01L21/02381 , H01L21/02466 , H01L21/02502 , H01L21/02549 , H01L21/02631 , H01L43/065 , Y10S438/974
摘要： A method of fabricating a semiconductor thin film is initiated with preparing a substrate having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms, of at least one selected from the group consisting of Al, Ga, and In. A buffer layer containing at least In and Sb is formed on the initial layer. A semiconductor thin film containing at least In and Sb is formed on the buffer layer at a temperature higher than the temperature at which the buffer layer is started to be formed. There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.
摘要翻译：通过制备具有由Si的单晶组成的表面的衬底来开始制造半导体薄膜的方法。该表面具有氧化膜。然后，除去氧化膜。表面上的Si原子的悬挂键用氢原子终止。在由Al，Ga和In组成的组中选出的至少一种的氢原子的单结晶的基板上形成初始层。在初始层上形成至少含有In和Sb的缓冲层。至少含有In和Sb的半导体薄膜在高于开始形成缓冲层的温度的温度下形成在缓冲层上。还公开了一种制造霍尔效应器件的方法。通过利用上述制造方法形成半导体薄膜来开始该方法。然后，电极附着在薄膜上。

16. 发明授权

US08896178B2 Synchronous electric motor drive system having slit windings 有权
标题翻译：具有狭缝绕组的同步电机驱动系统
公开(公告)号：US08896178B2
公开(公告)日：2014-11-25
申请号：US13386966
申请日：2011-02-15
申请人： Noriyoshi Nishiyama , Makoto Kitabatake
发明人： Noriyoshi Nishiyama , Makoto Kitabatake
IPC分类号： H02K3/28 , H02P6/08 , H02K21/16 , H02K3/16 , H02K3/20 , H02K29/12 , H02K1/14 , H02K21/22 , H02P6/10 , H02P25/18
CPC分类号： H02K1/146 , H02K3/20 , H02K3/28 , H02K21/16 , H02K21/222 , H02P6/10 , H02P25/18
摘要： A synchronous motor drive system improves the design flexibility regarding torque characteristics as compared with conventionally available design flexibility. A synchronous motor has a rotor and a stator. Each of at least two adjacent stator teeth has a slit formed at the tip thereof. Each of a plurality of stator teeth has a main coil wound therearound in concentrated winding. Between each two adjacent teeth having a slit, a sub-coil is wound around in a manner of being accommodated in the respective slits. The drive device separately controls electric current supplied to the main coils and electric current supplied to the sub-coil.
摘要翻译：与常规可用的设计灵活性相比，同步电机驱动系统提高了转矩特性的设计灵活性。同步电动机具有转子和定子。至少两个相邻的定子齿中的每一个在其尖端处形成有狭缝。多个定子齿中的每一个具有卷绕在集中绕组上的主线圈。在具有狭缝的每个两个相邻齿之间，子线圈以容纳在各个狭缝中的方式缠绕。驱动装置分别控制供给主线圈的电流和供给到副线圈的电流。

17. 发明授权

US08885368B2 Power converting apparatus suppressing switching noise by controlling switching operation 有权
标题翻译：电力转换装置通过控制开关动作来抑制开关噪声
公开(公告)号：US08885368B2
公开(公告)日：2014-11-11
申请号：US13641757
申请日：2011-06-17
申请人： Shun Kazama , Masaki Tagome , Makoto Kitabatake
发明人： Shun Kazama , Masaki Tagome , Makoto Kitabatake
IPC分类号： H02M1/12 , H02M7/5387 , H02M7/497 , H02M1/15 , H03K17/16
CPC分类号： H03K17/164 , H02M1/15 , H02M7/497 , H02M7/5387
摘要： A power converter for effectively reducing switching noise is provided. The power converter comprises a capacitor 111; switching devices Q11a and Q11b connected to the capacitor 111 in parallel; and a controller 105 that controls each switching device individually to perform switching operations. Each of the switching devices Q11a and Q11b forms a closed circuit together with the capacitor 111. The controller 105 controls the switching devices Q11a and Q11b to perform switching operations of switching ON or OFF at different timings such that at least two closed circuits including the switching devices Q11a and Q11b mutually cancel ringing voltages occurring therein, each ringing voltage occurring due to the switching operations performed by a corresponding switching device and having a frequency defined by an inductance of a corresponding closed circuit and an output capacity of a switching device included in the corresponding closed circuit.
摘要翻译：提供了一种有效降低开关噪声的电源转换器。功率转换器包括电容器111; 并联连接到电容器111的开关器件Q11a和Q11b; 以及控制器105，其分别控制各开关装置进行切换动作。开关装置Q11a，Q11b与电容器111一起形成闭合电路。控制部105控制切换装置Q11a，Q11b，在不同的定时进行接通或断开的切换动作，使至少包含切换的2个闭合电路设备Q11a和Q11b相互抵消其中发生的振铃电压，由于由相应的开关装置执行的开关操作而产生的振铃电压，并且具有由相应的闭合电路的电感和包括在其中的开关装置的输出容量定义的频率相应闭路。

18. 发明授权

US08693226B2 Synchronous rectification type inverter 有权
标题翻译：同步整流式逆变器
公开(公告)号：US08693226B2
公开(公告)日：2014-04-08
申请号：US13639182
申请日：2011-10-28
申请人： Makoto Kitabatake , Shun Kazama
发明人： Makoto Kitabatake , Shun Kazama
IPC分类号： H02M3/335
CPC分类号： H02M7/5387 , H01L29/1608 , H01L29/66068 , H01L29/7806 , H01L29/7828 , H02M7/003
摘要： An inverter comprising: a circuit including arms connected in parallel, each of the arms including a first switch and a second switch connected in series; and a gate drive circuit configured to control, by pulse-width modulation using synchronous rectification, each of the first switch and the second switch to switch to an on-state or an off-state, wherein each of the first switch and the second switch includes: a channel region that is conductive in both a forward direction and a reverse direction in the on-state, and that is not conductive in the forward direction in the off-state; and a diode region that is combined as one with the channel region, and that is conductive only in the reverse direction, the diode region being unipolar, and the gate drive circuit synchronizes a timing at which the gate drive circuit outputs a signal for causing the first switch to switch to the on-state with a timing at which the gate drive circuit outputs a signal for causing the second switch to switch to the off-state, and synchronizes a timing at which the gate drive circuit outputs a signal for causing the first switch to switch to the off-state with a timing at which the gate drive circuit outputs a signal for causing the second switch to switch to the on-state.
摘要翻译：一种逆变器，包括：包括并联连接的臂的电路，每个臂包括串联连接的第一开关和第二开关; 以及栅极驱动电路，被配置为通过使用同步整流的脉冲宽度调制来控制第一开关和第二开关中的每一个以切换到导通状态或截止状态，其中第一开关和第二开关包括：在导通状态下在正向和反向都是导通的沟道区，并且在截止状态下在正向上不导通; 以及二极管区域，其与沟道区域一体化，并且仅在相反方向上导通，二极管区域是单极的，并且栅极驱动电路同步门驱动电路输出信号的定时，第一开关切换到导通状态，栅极驱动电路输出用于使第二开关切换到截止状态的信号的定时，并且使门驱动电路输出用于使第一开关以栅极驱动电路输出用于使第二开关切换到导通状态的信号的定时切换到断开状态。

19. 发明授权

US08680794B2 Load drive system, motor drive system, and vehicle control system 有权
标题翻译：负载驱动系统，电机驱动系统和车辆控制系统
公开(公告)号：US08680794B2
公开(公告)日：2014-03-25
申请号：US13133775
申请日：2010-11-18
申请人： Shun Kazama , Makoto Kitabatake , Masaki Tagome
发明人： Shun Kazama , Makoto Kitabatake , Masaki Tagome
IPC分类号： H02P5/68
CPC分类号： H02M7/53871 , B60L1/003 , B60L1/02 , B60L11/1803 , B60L15/08 , B60L2210/40 , B60L2220/14 , B60L2220/16 , B60L2220/46 , B60L2270/147 , H02M2001/008 , H02P27/08 , Y02T10/644 , Y02T10/645 , Y02T10/7005 , Y02T10/7241 , Y10T307/406
摘要： A small-sized load drive system which, even with three three-phase inverters, significantly reduces noise regardless of control duty ratio. The load drive system includes three-phase inverters, and first, second, and third control units. The inverters are connected to loads, respectively. The first control unit generates sawtooth wave voltage and controls the inverter according to the sawtooth wave voltage. The second control unit generates inverse sawtooth wave voltage and controls the inverter according to the inverse sawtooth wave voltage. The third control unit generates triangular wave voltage which has ramps respectively equal to the sawtooth/inverse sawtooth wave voltage and either has a same phase or is out of phase by half a period relative to the sawtooth/inverse sawtooth wave voltage, and also controls the inverter according to the triangular wave voltage.
摘要翻译：即使使用三个三相逆变器，小型负载驱动系统也可以显着降低噪声，而不管控制占空比如何。负载驱动系统包括三相逆变器以及第一，第二和第三控制单元。逆变器分别连接到负载。第一控制单元产生锯齿波电压，并根据锯齿波电压控制逆变器。第二控制单元产生反锯齿波电压，并根据逆锯齿波电压控制逆变器。第三控制单元产生三角波电压，其三角波电压分别等于锯齿波/反锯齿波电压，并且相对于锯齿波/反锯齿波电压具有相同相位或相位相差一半的周期，并且还控制变频器根据三角波电压。

20. 发明申请

US20130039100A1 POWER CONVERTING APPARATUS 有权
标题翻译：电源转换装置
公开(公告)号：US20130039100A1
公开(公告)日：2013-02-14
申请号：US13641757
申请日：2011-06-17
申请人： Shun Kazama , Masaki Tagome , Makoto Kitabatake
发明人： Shun Kazama , Masaki Tagome , Makoto Kitabatake
IPC分类号： H02M1/12
CPC分类号： H03K17/164 , H02M1/15 , H02M7/497 , H02M7/5387
摘要： A power converter for effectively reducing switching noise is provided. The power converter comprises a capacitor 111; switching devices Q11a and Q11b connected to the capacitor 111 in parallel; and a controller 105 that controls each switching device individually to perform switching operations. Each of the switching devices Q11a and Q11b forms a closed circuit together with the capacitor 111. The controller 105 controls the switching devices Q11a and Q11b to perform switching operations of switching ON or OFF at different timings such that at least two closed circuits including the switching devices Q11a and Q11b mutually cancel ringing voltages occurring therein, each ringing voltage occurring due to the switching operations performed by a corresponding switching device and having a frequency defined by an inductance of a corresponding closed circuit and an output capacity of a switching device included in the corresponding closed circuit.
摘要翻译：提供了一种有效降低开关噪声的电源转换器。功率转换器包括电容器111; 并联连接到电容器111的开关器件Q11a和Q11b; 以及控制器105，其分别控制各开关装置进行切换动作。开关装置Q11a，Q11b与电容器111一起形成闭合电路。控制部105控制切换装置Q11a，Q11b，在不同的定时进行接通或断开的切换动作，使至少包含切换的2个闭合电路设备Q11a和Q11b相互抵消其中发生的振铃电压，由于由相应的开关装置执行的开关操作而产生的振铃电压，并且具有由相应的闭合电路的电感和包括在其中的开关装置的输出容量定义的频率相应闭路。

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