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11. 发明授权

US07778083B2 Program and erase methods for nonvolatile memory 有权
标题翻译：非易失性存储器的编程和擦除方法
公开(公告)号：US07778083B2
公开(公告)日：2010-08-17
申请号：US12191400
申请日：2008-08-14
申请人： Seunghyun Moon , Kihwan Choi
发明人： Seunghyun Moon , Kihwan Choi
IPC分类号： G11C16/06
CPC分类号： G11C16/16 , G11C16/10 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying at least one programming pulse, at least one erasing pulse, at least one time delay, at least one soft erase pulse, at least one soft programming pulse and/or at least one verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.
摘要翻译：编程或擦除具有电荷存储层的非易失性存储器件的方法包括执行至少一个单元编程或擦除循环，每个单元编程或擦除循环包括施加至少一个编程脉冲，至少一个擦除脉冲，至少一个时间延迟，至少一个软擦除脉冲，至少一个软编程脉冲和/或至少一个验证脉冲作为非易失性存储器件的一部分（例如，字线或衬底）的正或负电压。

12. 发明申请

US20090055577A1 PROGRAMMING METHODS FOR NONVOLATILE MEMORY 有权
标题翻译：非易失性存储器的编程方法
公开(公告)号：US20090055577A1
公开(公告)日：2009-02-26
申请号：US12191453
申请日：2008-08-14
申请人： Seunghyun Moon , Kihwan Choi
发明人： Seunghyun Moon , Kihwan Choi
IPC分类号： G06F12/02
CPC分类号： G11C16/3404 , G11C16/0416 , G11C16/0483 , G11C16/10 , G11C2216/14 , H01L27/11524 , H01L27/11551 , H01L27/11578
摘要： Example embodiments are directed to methods, memory devices, and systems for programming a nonvolatile memory device having a charge storage layer including performing at least one unit programming loop, each unit programming loop including, applying a programming pulse to at least two pages, applying a time delay to the at least two pages, and applying a verifying pulse to the at least two pages.
摘要翻译：示例性实施例涉及用于编程具有电荷存储层的非易失性存储器件的方法，存储器件和系统，所述非易失性存储器件包括执行至少一个单元编程环路，每个单元编程回路包括将编程脉冲施加到至少两个页面，至少两页的时间延迟，以及将验证脉冲施加到所述至少两个页面。

13. 发明授权

US08784630B2 Sample stacking method using on-line automatic solid phase extraction coupled to nonaqueous capillary electrophoresis and interface structure between solid-phase preconcentration cartridge and capillary therefor 有权
标题翻译：使用在线自动固相萃取耦合到非水性毛细管电泳的样品堆叠方法和固相预浓缩筒与毛细管之间的界面结构
公开(公告)号：US08784630B2
公开(公告)日：2014-07-22
申请号：US12206221
申请日：2008-09-08
申请人： Doo Soo Chung , Lichun Liu , Kihwan Choi
发明人： Doo Soo Chung , Lichun Liu , Kihwan Choi
IPC分类号： G01N27/453
CPC分类号： G01N27/44743 , G01N1/405
摘要： A sample stacking method using on-line automatic solid phase extraction coupled to nonaqueous capillary electrophoresis, and an interface structure between a solid-phase preconcentration cartridge and a capillary therefor. The sample analysis method using solid phase extraction coupled to nonaqueous capillary electrophoresis by connecting a solid-phase preconcentration cartridge with a capillary includes: extracting a sample on a solid phase; injecting an elution solvent at an outlet terminal of the capillary, the elution solution desorbing analytes adsorbed onto a solid-phase material of a solid-phase preconcentration cartridge; and injecting a nonaqueous buffer solution from the outlet terminal of the capillary to push the elution solvent to the solid-phase material.
摘要翻译：使用在线自动固相萃取耦合到非水性毛细管电泳的样品堆叠方法，以及固相预浓缩筒和其毛细管之间的界面结构。使用固相萃取偶联至非水性毛细管电泳的样品分析方法通过将固相预浓缩筒与毛细管连接，包括：在固相上提取样品; 在毛细管的出口端注入洗脱溶剂，洗脱溶液解吸吸附在固相预浓缩筒的固相材料上的分析物; 并从毛细管的出口端注入非水缓冲溶液以将洗脱溶剂推到固相材料中。

14. 发明申请

US20130083607A1 METHOD OF READING MEMORY CELLS WITH DIFFERENT THRESHOLD VOLTAGES WITHOUT VARIATION OF WORD LINE VOLTAGE AND NONVOLATILE MEMORY DEVICE USING THE SAME 有权
标题翻译：使用不同变化的线路电压和非易失性存储器件读取具有不同阈值电压的存储器电池的方法
公开(公告)号：US20130083607A1
公开(公告)日：2013-04-04
申请号：US13608030
申请日：2012-09-10
申请人： SANG-HYUN JOO , KIWHAN SONG , JU SEOK LEE , KIHWAN CHOI
发明人： SANG-HYUN JOO , KIWHAN SONG , JU SEOK LEE , KIHWAN CHOI
IPC分类号： G11C16/26
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/08 , G11C2211/563
摘要： A soft-decision read method of a nonvolatile memory device includes receiving a soft-decision read command, applying a read voltage to a selected word line, pre-charging bit lines respectively connected to selected memory cells of the selected word line, continuously sensing states of the selected memory cells. The pre-charged voltages of the bit lines and the read voltage supplied to the selected word line are not varied during the sensing states of the selected memory cells.
摘要翻译：非易失性存储器件的软判决读取方法包括：接收软判决读命令，将读电压施加到所选择的字线，对分别连接到所选字线的选定存储单元的位线进行预充电，连续检测状态的所选存储单元。提供给所选字线的位线的预充电电压和读取电压在所选存储单元的感测状态期间不改变。

15. 发明授权

US08331155B2 Method for programming nonvolatile memory device 有权
标题翻译：非易失性存储器件编程方法
公开(公告)号：US08331155B2
公开(公告)日：2012-12-11
申请号：US12752225
申请日：2010-04-01
申请人： Kwon Ohsuk , Kihwan Choi
发明人： Kwon Ohsuk , Kihwan Choi
IPC分类号： G11C16/04 , G11C16/06 , G11C16/10 , G11C16/12
CPC分类号： G11C11/5628
摘要： A method programs a nonvolatile memory device to program memory cells from one or more first logic states to two or more second logic states. In the method, a number of program voltages are provided to a selected word line, and verify voltages corresponding to the second logic states are provided to the selected word line. The number of the program voltages provided to the selected word line varies according to the threshold voltage difference between each of the first logic states and each of the second logic states.
摘要翻译：一种方法对非易失性存储器件进行编程以将存储器单元从一个或多个第一逻辑状态编程到两个或更多个第二逻辑状态。在该方法中，将多个编程电压提供给所选择的字线，并且将对第二逻辑状态对应的电压提供给所选择的字线。提供给所选字线的编程电压的数量根据第一逻辑状态和第二逻辑状态中的每一个之间的阈值电压差而变化。

16. 发明申请

US20120137067A1 Non-Volatile Memory Device And Read Method Thereof 有权
标题翻译：非易失性存储器件及其读取方法
公开(公告)号：US20120137067A1
公开(公告)日：2012-05-31
申请号：US13094192
申请日：2011-04-26
申请人： Ji-Sang Lee , Kihwan Choi
发明人： Ji-Sang Lee , Kihwan Choi
IPC分类号： G06F12/00 , G11C16/26
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/3418
摘要： In one embodiment, the method includes receiving a request to read data stored in a first memory cell associated with a first word line, and performing a first read operation on at least one memory cell associated with a second word line in response to the request. The second word line follows the first word line in a word line programming order, and the first read operation is performed over a first time period. The method further includes performing a second read operation on the first memory cell based on output from the first read operation. The second read operation is performed for a second time period, and the first time period is shorter than the second time period if output from performing the first read operation indicates the first memory cell is not coupled.
摘要翻译：在一个实施例中，该方法包括接收读取存储在与第一字线相关联的第一存储器单元中的数据的请求，以及响应于该请求对与第二字线相关联的至少一个存储器单元执行第一读取操作。第二字线在字线编程顺序中跟随第一字线，并且在第一时间段执行第一读取操作。该方法还包括基于来自第一读取操作的输出对第一存储器单元执行第二读取操作。如果从执行第一读取操作的输出指示第一存储器单元没有耦合，则第二次读取操作执行第二时间段，并且第一时间段比第二时间段短。

17. 发明授权

US08164952B2 Nonvolatile memory device and related method of programming 有权
标题翻译：非易失存储器件及相关的编程方法
公开(公告)号：US08164952B2
公开(公告)日：2012-04-24
申请号：US12719184
申请日：2010-03-08
申请人： Sung-Won Yun , Kihwan Choi
发明人： Sung-Won Yun , Kihwan Choi
IPC分类号： G11C16/04
CPC分类号： G11C11/5621 , G11C16/3436
摘要： A nonvolatile memory device comprises a memory cell array comprising a plurality of memory cells, a voltage generator configured to generate voltages to program the plurality of memory cells, and a control logic component configured to control the voltage generator to provide a plurality of program voltages to selected memory cells during successive iterations of a program loop. Wherein where memory cells corresponding to one logic state are judged to be program passed during a current iteration of the program loop, the control logic component controls the voltage generator such that a program voltage corresponding to the one logic state is skipped during subsequent iterations of the program loop.
摘要翻译：非易失性存储器件包括存储单元阵列，该存储单元阵列包括多个存储器单元，被配置为产生用于编程多个存储器单元的电压的电压发生器，以及控制逻辑元件，被配置为控制电压发生器以提供多个编程电压在程序循环的连续迭代期间选择存储单元。其中对应于一个逻辑状态的存储器单元在程序循环的当前迭代期间被判断为程序传递，控制逻辑部件控制电压发生器，使得在随后的迭代期间跳过对应于一个逻辑状态的编程电压程序循环。

18. 发明申请

US20110262351A1 FLUORESCENT SILICA NANOPARTICLE WITH RADIOACTIVE TAG AND THE DETECTING METHOD OF PET AND FLUORESCENT DUAL IMAGING USING THEREOF 审中-公开
标题翻译：具有放射性标记的荧光二氧化硅纳米颗粒和使用其的PET和荧光双成像的检测方法
公开(公告)号：US20110262351A1
公开(公告)日：2011-10-27
申请号：US12595503
申请日：2009-09-09
申请人： DooSoo Chung , Keonwook Kang , Yonghyun Jeon , Younghwa Kim , Zeid A. Alothman , Ahmed Yacine Hadj Ahmed , Kihwan Choi , Abduullah M. Aimajid , Jingyu Piao , Asma A. Alothman , Bo Quan
发明人： DooSoo Chung , Keonwook Kang , Yonghyun Jeon , Younghwa Kim , Zeid A. Alothman , Ahmed Yacine Hadj Ahmed , Kihwan Choi , Abduullah M. Aimajid , Jingyu Piao , Asma A. Alothman , Bo Quan
IPC分类号： A61K51/04 , A61P43/00 , C07F7/18
CPC分类号： A61K49/0093 , A61B5/0071 , A61K49/0002 , A61K49/0021 , A61K49/0034 , A61K49/0041 , A61K51/1244
摘要： The present invention relates to nuclear medicine using fluorescent silica nanoparticle and detecting method of optical dual imaging, and more particularly to radioisotope labeled fluorescent silica nanoparticles which are used for PET (positron emission tomography) and fluorescence detecting, and detecting method of PET and fluorescent dual imaging using thereof. Functionalized silica nanoparticles of this invention have promising potential as a role for organic lymphatic tracer in biomedical imaging such as pre- and intra-operative surgical guidance.
摘要翻译：本发明涉及使用荧光二氧化硅纳米颗粒的核医学和光学双重成像的检测方法，更具体地涉及用于PET（正电子发射断层摄影）和荧光检测的放射性同位素标记的荧光二氧化硅纳米粒子，以及PET和荧光双重检测方法使用它进行成像。本发明的官能化二氧化硅纳米颗粒在生物医学成像如手术前和手术前的指导中具有有希望的潜力，作为有机淋巴示踪剂的作用。

19. 发明申请

US20110243843A1 FLUORESCENT SILICA NANOPARTICLES FOR DETECTING LYMPH NODE AND THE IDENTIFICATION METHOD OF LYMPH NODE USING THEREOF 审中-公开
标题翻译：用于检测淋巴结的荧光二氧化硅纳米粒子及其使用的淋巴节点的鉴定方法
公开(公告)号：US20110243843A1
公开(公告)日：2011-10-06
申请号：US12595502
申请日：2009-09-09
申请人： DooSoo Chung , Keonwook Kang , Yonghyun Jeon , Younghwa Kim , Zeid A. Alothman , Saud I. Airesayes , Kihwan Choi , Nawal A. Aiarfaj , Jingyu Piao , Salma A. Aitamimi , Bo Quan
发明人： DooSoo Chung , Keonwook Kang , Yonghyun Jeon , Younghwa Kim , Zeid A. Alothman , Saud I. Airesayes , Kihwan Choi , Nawal A. Aiarfaj , Jingyu Piao , Salma A. Aitamimi , Bo Quan
IPC分类号： A61K51/04 , C07F7/02 , C07D311/04 , A61K31/404 , C12Q1/02 , A61P35/00
CPC分类号： A61K49/0093 , A61K49/0002 , A61K49/0034 , A61K49/0041 , A61K51/1244
摘要： The present invention relates to fluorescent silica nanoparticles for detecting lymph node and identification method of lymph node using thereof. The functionalized silica nanoparticles containing fluorescent dye of this invention have a promising potential for sentinel node detection in the surgical field through fluorescent imaging.
摘要翻译：本发明涉及用于检测淋巴结的荧光二氧化硅纳米粒子及其使用的淋巴结鉴定方法。含有本发明荧光染料的官能化二氧化硅纳米粒子通过荧光成像具有在外科视野中前哨淋巴结检测的潜力。

20. 发明授权

US07940567B2 Programming methods for nonvolatile memory 有权
标题翻译：非易失性存储器的编程方法
公开(公告)号：US07940567B2
公开(公告)日：2011-05-10
申请号：US12191453
申请日：2008-08-14
申请人： Seunghyun Moon , Kihwan Choi
发明人： Seunghyun Moon , Kihwan Choi
IPC分类号： G11C11/34
CPC分类号： G11C16/3404 , G11C16/0416 , G11C16/0483 , G11C16/10 , G11C2216/14 , H01L27/11524 , H01L27/11551 , H01L27/11578
摘要： Example embodiments are directed to methods, memory devices, and systems for programming a nonvolatile memory device having a charge storage layer including performing at least one unit programming loop, each unit programming loop including, applying a programming pulse to at least two pages, applying a time delay to the at least two pages, and applying a verifying pulse to the at least two pages.
摘要翻译：示例性实施例涉及用于编程具有电荷存储层的非易失性存储器件的方法，存储器件和系统，所述非易失性存储器件包括执行至少一个单元编程环路，每个单元编程回路包括将编程脉冲应用于至少两个页面，至少两页的时间延迟，以及将验证脉冲施加到所述至少两个页面。

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