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11. 发明授权

US6001730A Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers 失效
标题翻译：用于抛光使用钽基阻挡层的铜互连的化学机械抛光（CMP）浆料
公开(公告)号：US6001730A
公开(公告)日：1999-12-14
申请号：US954191
申请日：1997-10-20
申请人： Janos Farkas , Rajeev Bajaj , Melissa Freeman , David K. Watts , Sanjit Das
发明人： Janos Farkas , Rajeev Bajaj , Melissa Freeman , David K. Watts , Sanjit Das
IPC分类号： C09G1/02 , H01L21/321 , H01L21/768 , H01L1/00
CPC分类号： H01L21/76873 , C09G1/02 , H01L21/3212 , H01L21/7684 , H01L21/76843 , H01L21/76877
摘要： A method for forming a copper interconnect on an integrated circuit (IC) begins by forming a dielectric layer (20) having an opening. A tantalum-based barrier layer (21), such as TaN or TaSiN, is formed within the opening in the layer (20). A copper layer (22) is formed over the barrier layer (21). A first CMP process is used to polish the copper (22) to expose portions of the barrier (21). A second CMP process which is different from the first CMP process is then used to polish exposed portions of the layer (21) faster than the dielectric layer (20) or the copper layer (22). After this two-step CMP process, a copper interconnect having a tantalum-based barrier is formed across the integrated circuit substrate (12).
摘要翻译：在集成电路（IC）上形成铜互连的方法通过形成具有开口的电介质层（20）开始。在层（20）的开口内形成有TaN或TaSiN等钽系阻挡层（21）。在阻挡层（21）的上方形成铜层（22）。第一CMP工艺用于抛光铜（22）以暴露阻挡层（21）的部分。然后使用与第一CMP工艺不同的第二CMP工艺来比电介质层（20）或铜层（22）更快地抛光层（21）的暴露部分。在该两步CMP工艺之后，跨越集成电路基板（12）形成具有钽基阻挡层的铜互连。

12. 发明授权

US5928962A Process for forming a semiconductor device 失效
标题翻译：用于形成半导体器件的工艺
公开(公告)号：US5928962A
公开(公告)日：1999-07-27
申请号：US88013
申请日：1998-06-01
申请人： Janos Farkas , Sanjit K. Das , George R. Meyer
发明人： Janos Farkas , Sanjit K. Das , George R. Meyer
IPC分类号： B24B37/04 , H01L21/306 , H01L21/3105 , H01L21/66 , H01L21/00
CPC分类号： H01L22/20 , B24B37/04 , H01L21/31053
摘要： Physical properties of alumina particles in a chemical-mechanical polishing slurry delivery loop (28) are measured using a titration technique (44). Examples of the physical properties include crystallographic phase, surface charge, and surface charge density. The physical properties are correlated to a polishing rate (46). Specification limits are generated using the correlated data (482 and 486). The specification limits are used to determine if no adjustments are required to the polishing parameters (484), if adjustments are required to polishing parameters (488) or if the slurry requires replacement (489). This process can be automated and integrated into a conventional chemical-mechanical polishing processing system (20).
摘要翻译：使用滴定技术（44）测量化学机械抛光浆料输送回路（28）中氧化铝颗粒的物理性质。物理性质的实例包括结晶相，表面电荷和表面电荷密度。物理性质与抛光速率相关（46）。使用相关数据（482和486）生成规格限制。规范限制用于确定抛光参数（484）是否不需要调整，如果需要调整抛光参数（488）或如果浆料需要更换（489）。该过程可以自动化并且集成到常规的化学 - 机械抛光处理系统（20）中。

13. 发明授权

US5773364A Method for using ammonium salt slurries for chemical mechanical polishing (CMP) 失效
标题翻译：使用铵盐浆料进行化学机械抛光（CMP）的方法
公开(公告)号：US5773364A
公开(公告)日：1998-06-30
申请号：US734566
申请日：1996-10-21
申请人： Janos Farkas , Melissa Freeman
发明人： Janos Farkas , Melissa Freeman
IPC分类号： B24B1/00 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/00
CPC分类号： H01L21/3212
摘要： A method for chemical/mechanical polishing (CMP) uses a slurry (22). This slurry (22) contains one or more ammonium salts, such as ammonium nitride (NH.sub.4 NO.sub.3), as an oxidizing/etching species within the slurry (22). This slurry (22) is used to polish a metal layer (14) whereby the ammonium salt does not create slurry distribution problems, does not contain metallic species, does not contain mobile ions like potassium, and is environmentally safe.
摘要翻译：化学/机械抛光（CMP）的方法使用浆料（22）。该浆料（22）含有一种或多种铵盐，例如氮化铵（NH 4 NO 3），作为浆料（22）内的氧化/蚀刻物质。这种浆料（22）用于抛光金属层（14），由此铵盐不会产生浆料分布问题，不含金属物质，不含钾等可移动离子，对环境无害。

14. 发明授权

US08324104B2 Surface treatment in semiconductor manufacturing 有权
标题翻译：半导体制造中的表面处理
公开(公告)号：US08324104B2
公开(公告)日：2012-12-04
申请号：US12934277
申请日：2008-04-11
申请人： Maria Luisa Calvo-Munoz , Janos Farkas
发明人： Maria Luisa Calvo-Munoz , Janos Farkas
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/02074 , H01L21/321 , H01L21/76877 , H01L21/76883
摘要： The present invention provides a process for forming a capping layer on a conducting interconnect for a semiconductor device, the process comprising: providing a substrate comprising one or more conductors in a dielectric layer, the conductors having an oxide layer at their surface; exposing the surface of the substrate to a vapor of β-diketone or a β-ketoimine; and depositing a capping layer on the surface of at least some of the one or more conductors. The present invention further provides an apparatus for carrying out this method.
摘要翻译：本发明提供了一种用于在半导体器件的导电互连上形成覆盖层的方法，该方法包括：提供包括在介电层中的一个或多个导体的基底，所述导体在其表面具有氧化物层; 将基材的表面暴露于二 - 二酮或α-酮亚胺的蒸气; 以及在所述一个或多个导体中的至少一些导体的表面上沉积覆盖层。本发明还提供一种用于执行该方法的装置。

15. 发明申请

US20100203893A1 ENHANCED FLOW CONTROL IN A CELLULAR TELEPHONY SYSTEM 有权
标题翻译：蜂窝电话系统中的增强流量控制
公开(公告)号：US20100203893A1
公开(公告)日：2010-08-12
申请号：US12516534
申请日：2006-11-28
申请人： Peter Lundh , Carola Faronius , Janos Farkas , Sandor Racz , Szilveszter Nadas
发明人： Peter Lundh , Carola Faronius , Janos Farkas , Sandor Racz , Szilveszter Nadas
IPC分类号： H04W40/02
CPC分类号： H04L47/10 , H04L47/11 , H04L47/12 , H04L47/14 , H04L47/25 , H04W28/02 , H04W28/10 , H04W28/12 , H04W88/12 , H04W92/12
摘要： The invention discloses a method (200, 300, 400) for traffic control in a cellular telephony system (100) comprising a number of cells, each cell comprising at least one Radio Base Station, RBS, (170). The system (100) comprises at least one Radio Network Controller, RNC, (110 130 150), for the control of a number of Radio Base stations. The traffic between an RBS and an RNC comprises a number of flows. The invention is intended for the control of flows from the Radio Base Stations to their RNC. The method uses one control function for each flow from each of said Radio Base Stations, and also comprises a congestion detection function (220) which detects the presence or absence of congestion in the traffic from an RBS to an RNC, and which, upon detection of congestion reduces the bit rate of the congested traffic, and in the absence of congestion, increases the bit rate of the previously congested traffic.
摘要翻译：本发明公开了一种用于包括多个小区的蜂窝电话系统（100）中的业务控制的方法（200,300,400），每个小区包括至少一个无线电基站RBS（170）。系统（100）包括用于控制多个无线电基站的至少一个无线电网络控制器RNC（110 130 150）。 RBS和RNC之间的业务包括多个流。本发明旨在控制从无线电基站到其RNC的流量。该方法对来自每个所述无线电基站的每个流使用一个控制功能，并且还包括拥塞检测功能（220），其检测从RBS到RNC的流量中是否存在拥塞，以及哪个在检测到拥塞降低了拥塞流量的比特率，并且在没有拥塞的情况下，增加了先前拥塞的流量的比特率。

16. 发明申请

US20100139526A1 SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOR, AND MATERIAL FOR COUPLING A DIELECTRIC LAYER AND A METAL LAYER IN A SEMICONDUCTOR DEVICE 有权
标题翻译：包括耦合电介质层和金属层的半导体器件，制造方法，以及用于耦合电介质层和金属层在半导体器件中的材料
公开(公告)号：US20100139526A1
公开(公告)日：2010-06-10
申请号：US12705038
申请日：2010-02-12
申请人： Janos FARKAS , Srdjan KORDIC , Cindy GOLBERG
发明人： Janos FARKAS , Srdjan KORDIC , Cindy GOLBERG
IPC分类号： C07F7/18 , C09D7/00 , C08K5/5425
CPC分类号： H01L21/3105 , C04B35/5603 , C04B35/565 , C04B2235/483 , C08G77/60 , C08L83/16 , C09D183/16 , H01L21/02063 , H01L21/02126 , H01L21/02164 , H01L21/02203 , H01L21/288 , H01L21/76801 , H01L21/7682 , H01L21/76838
摘要： A passivating coupling material for, on the one hand, passivating a dielectric layer in a semiconductor device, and on the other hand, for permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. In a particular example, the dielectric layer may be a porous material having a desirably decreased dielectric constant k, and the passivating coupling material provides steric shielding groups that substantially block the adsorption and uptake of ambient moisture into the porous dielectric layer. The passivating coupling materials also provides metal nucleation sides for promoting the deposition of a metal thereon in liquid phase, in comparison with metal deposition without the presence of the passivating coupling material. The use of a liquid phase metal deposition process facilitates the subsequent manufacture of the semiconductor device. In one example, the passivating coupling material has multiple Si atoms in its chemical composition, which desirably increases the thermal stability of the material.
摘要翻译：一种钝化耦合材料，一方面使半导体器件中的电介质层钝化，另一方面，用于在随后的工艺步骤中允许或至少促进液相金属沉积。在具体实例中，电介质层可以是具有理想的降低介电常数k的多孔材料，并且钝化耦合材料提供空间屏蔽基团，其基本上阻止环境水分吸附和吸收到多孔介电层中。与金属沉积相比，钝化耦合材料还提供金属成核侧，用于促进金属沉积在液相中，而不存在钝化偶联材料。使用液相金属沉积工艺有助于随后的半导体器件的制造。在一个实例中，钝化偶联材料在其化学组成中具有多个Si原子，这有利地增加了材料的热稳定性。

17. 发明授权

US07660242B2 Call admission control system and method for interpreting signaling messages and controlling traffic load in internet protocol differentiated services networks 失效
标题翻译：呼叫接纳控制系统和方法，用于解释信令消息并控制互联网协议差分服务网络中的流量负载
公开(公告)号：US07660242B2
公开(公告)日：2010-02-09
申请号：US10595092
申请日：2004-07-27
申请人： Gergely Matefi , Csaba Antal , Janos Farkas
发明人： Gergely Matefi , Csaba Antal , Janos Farkas
IPC分类号： G08C15/00
CPC分类号： H04L47/10 , H04L47/14 , H04L47/15 , H04L47/2408 , H04L47/2416 , H04L47/283 , H04L47/70 , H04L47/801 , H04L47/805 , H04L47/822 , H04L47/824
摘要： A call admission control system and method for Internet Protocol (IP) Differentiated Services (DiffServ) network having at least one node for interpreting signaling messages and controlling traffic load in the network. The method consists of an initialization (601) and a real-time phase (602). In initialization phase (601), coefficients of the approximating hyperplanes are computed (61) and stored (62). This phase is repeated when the descriptor of a traffic class changes (63), which usually happens when nodes are configured or reconfigured. A traffic mix is admissible (67), if for each real-time traffic class both the stability (65) and the delay (66) constraints are fulfilled. Stability is tested by evaluating the number of lost packets and comparing it to the tolerated packet loss ratio for each class in that queue. Delay constraint is tested by checking if the traffic mix is below at least one of the approximating hyperplanes in the space of number of sessions for each class.
摘要翻译：一种用于互联网协议（IP）差分服务（DiffServ）网络的呼叫接纳控制系统和方法，其具有用于解释信令消息和控制网络中的业务负载的至少一个节点。该方法由初始化（601）和实时阶段（602）组成。在初始化阶段（601）中，计算（61）并存储（62）近似超平面的系数。当业务类的描述符改变（63）时，会重复此阶段，通常在配置或重新配置节点时发生。如果对于每个实时交通类来说，流量混合是可接受的（67），则稳定性（65）和延迟（66）约束都得到满足。通过评估丢失数据包的数量并将其与该队列中的每个类别的容忍丢包率进行比较来测试稳定性。通过检查流量混合是否低于每个类的会话空间中的近似超平面中的至少一个来测试延迟约束。

18. 发明申请

US20080316917A1 Method of Generating Spanning Trees 有权
标题翻译：生成生成树的方法
公开(公告)号：US20080316917A1
公开(公告)日：2008-12-25
申请号：US12089228
申请日：2005-10-11
申请人： Janos Farkas , Toth Gabor
发明人： Janos Farkas , Toth Gabor
IPC分类号： G06F11/00
CPC分类号： H04L12/4625 , H04L45/02 , H04L45/22 , H04L45/28 , H04L45/48
摘要： A method of generating spanning trees in a network in which a plurality of network nodes are interconnected by links. The spanning trees are utilized for handling link and node failures. For link failures, each link has at least one tree that does not include that link. For node failures, each node has at least one tree to which the node is connected by a single link. A first spanning tree connects all of the nodes, and from each node one link is left unconnected. A second spanning tree includes all of the nodes and all of the unconnected links. Thus, none of the links is included in both trees. If a node failure prevents other nodes from communicating, a third spanning tree is needed. The method minimizes the number of required trees in large networks of any topology and can be implemented off-line.
摘要翻译：一种在网络中生成生成树的方法，其中多个网络节点通过链路互连。生成树用于处理链路和节点故障。对于链路故障，每个链路至少有一个不包含该链路的树。对于节点故障，每个节点至少有一个树，节点通过单个链路连接到该树。第一个生成树连接所有节点，从每个节点，一个链路保持不连接。第二个生成树包括所有节点和所有未连接的链路。因此，这两个树都不包括链接。如果节点故障阻止其他节点通信，则需要第三个生成树。该方法将任何拓扑的大型网络中所需的树数量最小化，可以离线实现。

19. 发明申请

US20080282778A1 Method For Testing a Slurry Used to Form a Semiconductor Device 有权
标题翻译：用于测试用于形成半导体器件的浆料的方法
公开(公告)号：US20080282778A1
公开(公告)日：2008-11-20
申请号：US12091693
申请日：2005-10-25
申请人： Philippe Monnoyer , Janos Farkas , Farid Sebaai
发明人： Philippe Monnoyer , Janos Farkas , Farid Sebaai
IPC分类号： G01N11/00
CPC分类号： C09G1/02 , G01N15/04 , G01N29/032 , G01N2291/02416
摘要： A method for forming a semiconductor device, the method includes providing a semiconductor substrate, applying a slurry to the semiconductor substrate, wherein the slurry was tested using a testing method includes taking a first undiluted sample from a top of the slurry; determining a first particle size distribution characteristic of the first undiluted sample; taking a second undiluted sample from a bottom of the slurry; determining a second particle size distribution characteristic of the second undiluted sample; and comparing a difference between the first particle size distribution characteristic and the second particle size distribution characteristics with a first predetermined value.
摘要翻译：一种形成半导体器件的方法，所述方法包括提供半导体衬底，向半导体衬底施加浆料，其中使用测试方法测试所述浆料，包括从所述浆料的顶部取出第一未稀释的样品; 确定第一未稀释样品的第一粒度分布特性; 从浆料的底部取出第二个未稀释的样品; 确定第二未稀释样品的第二粒度分布特征; 以及将第一粒度分布特性和第二粒度分布特性之间的差与第一预定值进行比较。

20. 发明申请

US20080194116A1 Treatment Solution and Method of Applying a Passivating Layer 有权
标题翻译：处理方法及应用钝化层的方法
公开(公告)号：US20080194116A1
公开(公告)日：2008-08-14
申请号：US11914878
申请日：2005-05-25
申请人： Janos Farkas , Sebastien Petitdidier
发明人： Janos Farkas , Sebastien Petitdidier
IPC分类号： H01L21/47
CPC分类号： H01L21/3212 , C11D11/0047 , H01L21/02052 , H01L21/67034 , Y10S438/906
摘要： A treatment solution for a semiconductor wafer comprising water, a passivating reagent and a surfactant. The treatment solution is either mixed with a cleaning fluid, a rinsing fluid or a drying vapour, and is used in a cleaning apparatus employing a Marangoni dryer.
摘要翻译：一种用于包含水，钝化剂和表面活性剂的半导体晶片的处理溶液。处理溶液与清洁液，漂洗液或干燥蒸气混合，并用于采用Marangoni干燥器的清洁装置中。

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