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11. 发明授权

US08232562B2 Light emitting device employing nanowire phosphors 有权
标题翻译：采用纳米线荧光体的发光器件
公开(公告)号：US08232562B2
公开(公告)日：2012-07-31
申请号：US12848632
申请日：2010-08-02
申请人： Hwa-Mok Kim
发明人： Hwa-Mok Kim
IPC分类号： H01L27/15
CPC分类号： H01L33/502 , C09K11/54 , C09K11/565 , C09K11/574 , C09K11/584 , C09K11/595 , C09K11/623 , C09K11/642 , C09K11/7734 , C09K11/883 , Y10S977/762
摘要： Disclosed is a light emitting device employing nanowire phosphors. The light emitting device comprises a light emitting diode for emitting light having a first wavelength with a main peak in an ultraviolet, blue or green wavelength range; and nanowire phosphors for converting at least a portion of light having the first wavelength emitted from the light emitting diode into light with a second wavelength longer than the first wavelength. Accordingly, since the nanowire phosphors are employed, it is possible to reduce manufacturing costs of the light emitting device and to reduce light loss due to non-radiative recombination.
摘要翻译：公开了采用纳米线荧光体的发光器件。发光装置包括发光二极管，用于发射具有紫外线，蓝色或绿色波长范围内主峰的第一波长的光; 以及用于将具有从发光二极管发射的第一波长的至少一部分光转换成具有比第一波长长的第二波长的光的纳米线荧光体。因此，由于采用了纳米线型荧光体，因此能够降低发光元件的制造成本，并能够减少由于非辐射复合引起的光损失。

12. 发明申请

US20110204326A1 LIGHT EMITTING DIODE HAVING MODULATION DOPED LAYER 有权
标题翻译：具有调制掺杂层的发光二极管
公开(公告)号：US20110204326A1
公开(公告)日：2011-08-25
申请号：US13103631
申请日：2011-05-09
申请人： Hwa Mok KIM
发明人： Hwa Mok KIM
IPC分类号： H01L33/06
CPC分类号： H01L33/04 , H01L33/025 , H01L33/32
摘要： A light emitting diode (LED) having a modulation doped layer. The LED comprises an n-type contact layer, a p-type contact layer and an active region of a multiple quantum well structure having an InGaN well layer. The n-type contact layer comprises a first modulation doped layer and a second modulation doped layer, each having InGaN layers doped with a high concentration of n-type impurity and low concentration of n-type impurity InGaN layers alternately laminated. The InGaN layers of the first modulation doped layer have the same composition, and the InGaN layers of the second modulation doped layer have the same composition. The second modulation doped layer is interposed between the first modulation doped layer and the active region, and an n-electrode is in contact with the first modulation doped layer. Accordingly, an increase in process time is prevented and strains induced in a multiple quantum well structure are reduced.
摘要翻译：一种具有调制掺杂层的发光二极管（LED）。 LED包括n型接触层，p型接触层和具有InGaN阱层的多量子阱结构的有源区。 n型接触层包括第一调制掺杂层和第二调制掺杂层，每个具有掺杂有高浓度的n型杂质的InGaN层和低浓度的n型杂质InGaN层交替层叠。第一调制掺杂层的InGaN层具有相同的组成，第二调制掺杂层的InGaN层具有相同的组成。第二调制掺杂层介于第一调制掺杂层和有源区之间，并且n电极与第一调制掺杂层接触。因此，防止了处理时间的增加，并减少了在多量子阱结构中引起的应变。

13. 发明申请

US20100044674A1 LIGHT EMITTING DIODE HAVING MODULATION DOPED LAYER 有权
标题翻译：具有调制掺杂层的发光二极管
公开(公告)号：US20100044674A1
公开(公告)日：2010-02-25
申请号：US12540123
申请日：2009-08-12
申请人： Hwa Mok KIM
发明人： Hwa Mok KIM
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/025 , H01L33/32
摘要： A light emitting diode (LED) having a modulation doped layer. The LED comprises an n-type contact layer, a p-type contact layer and an active region of a multiple quantum well structure having an InGaN well layer. The n-type contact layer comprises a first modulation doped layer and a second modulation doped layer, each having InGaN layers doped with a high concentration of n-type impurity and low concentration of n-type impurity InGaN layers alternately laminated. The InGaN layers of the first modulation doped layer have the same composition, and the InGaN layers of the second modulation doped layer have the same composition. The second modulation doped layer is interposed between the first modulation doped layer and the active region, and an n-electrode is in contact with the first modulation doped layer. Accordingly, an increase in process time is prevented and strains induced in a multiple quantum well structure are reduced.
摘要翻译：一种具有调制掺杂层的发光二极管（LED）。 LED包括n型接触层，p型接触层和具有InGaN阱层的多量子阱结构的有源区。 n型接触层包括第一调制掺杂层和第二调制掺杂层，每个具有掺杂有高浓度的n型杂质的InGaN层和低浓度的n型杂质InGaN层交替层叠。第一调制掺杂层的InGaN层具有相同的组成，第二调制掺杂层的InGaN层具有相同的组成。第二调制掺杂层介于第一调制掺杂层和有源区之间，并且n电极与第一调制掺杂层接触。因此，防止了处理时间的增加，并减少了在多量子阱结构中引起的应变。

14. 发明授权

US07396696B2 Method for manufacturing super bright light emitting diode of nanorod array having InGaN quantum well 有权
标题翻译：制造具有InGaN量子阱的纳米棒阵列超亮度发光二极管的方法
公开(公告)号：US07396696B2
公开(公告)日：2008-07-08
申请号：US11463474
申请日：2006-08-09
申请人： Hwa-Mok Kim , Tae-Won Kang , Kwan-Soo Chung
发明人： Hwa-Mok Kim , Tae-Won Kang , Kwan-Soo Chung
IPC分类号： H01L21/00
CPC分类号： H01L33/08 , B82Y30/00 , H01L33/18 , H01L33/32 , Y10S438/962 , Y10S438/979 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/784 , Y10S977/815 , Y10S977/825
摘要： An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.
摘要翻译：公开了具有纳米棒（或纳米线）结构的GaN发光二极管（LED）。 GaN LED采用GaN纳米棒，其中通过将InGaN量子阱插入pn结GaN纳米棒的pn结界面中，随后在纵向方向上形成n型GaN纳米棒，InGaN量子阱和p型GaN纳米棒。此外，将多个这样的GaN纳米棒排列成阵列，以提供比常规层压膜GaN LED具有更大亮度和更高发光效率的LED。

15. 发明授权

US08247792B2 Light emitting diode having modulation doped layer 有权
标题翻译：具有调制掺杂层的发光二极管
公开(公告)号：US08247792B2
公开(公告)日：2012-08-21
申请号：US13103631
申请日：2011-05-09
申请人： Hwa Mok Kim
发明人： Hwa Mok Kim
IPC分类号： H01L29/06
CPC分类号： H01L33/04 , H01L33/025 , H01L33/32
摘要： A light emitting diode (LED) having a modulation doped layer. The LED comprises an n-type contact layer, a p-type contact layer and an active region of a multiple quantum well structure having an InGaN well layer. The n-type contact layer comprises a first modulation doped layer and a second modulation doped layer, each having InGaN layers doped with a high concentration of n-type impurity and low concentration of n-type impurity InGaN layers alternately laminated. The InGaN layers of the first modulation doped layer have the same composition, and the InGaN layers of the second modulation doped layer have the same composition. The second modulation doped layer is interposed between the first modulation doped layer and the active region, and an n-electrode is in contact with the first modulation doped layer. Accordingly, an increase in process time is prevented and strains induced in a multiple quantum well structure are reduced.
摘要翻译：一种具有调制掺杂层的发光二极管（LED）。 LED包括n型接触层，p型接触层和具有InGaN阱层的多量子阱结构的有源区。 n型接触层包括第一调制掺杂层和第二调制掺杂层，每个具有掺杂有高浓度的n型杂质的InGaN层和低浓度的n型杂质InGaN层交替层叠。第一调制掺杂层的InGaN层具有相同的组成，第二调制掺杂层的InGaN层具有相同的组成。第二调制掺杂层介于第一调制掺杂层和有源区之间，并且n电极与第一调制掺杂层接触。因此，防止了处理时间的增加，并减少了在多量子阱结构中引起的应变。

16. 发明申请

US20120160817A1 METHOD OF FABRICATING LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LASER LIFT-OFF APPARATUS HAVING HEATER 有权
标题翻译：使用激光提升技术制造发光二极管的方法和具有加热器的激光提升装置
公开(公告)号：US20120160817A1
公开(公告)日：2012-06-28
申请号：US13410884
申请日：2012-03-02
申请人： Chang Youn KIM , Joon Hee LEE , Jong Kyun YOU , Hwa Mok KIM
发明人： Chang Youn KIM , Joon Hee LEE , Jong Kyun YOU , Hwa Mok KIM
IPC分类号： B23K26/38
CPC分类号： H01L33/0079
摘要： An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.
摘要翻译：提供了一种使用激光剥离装置制造发光二极管的方法。该方法包括在第一衬底上生长包括第一导电型化合物半导体层，有源层和第二导电型化合物半导体层的外延层，将具有不同于第一衬底的热膨胀系数不同的第二衬底衬底，在第一衬底的高于室温的第一温度下到外延层，并且通过在第一衬底的高于室的第二温度下照射穿过第一衬底的激光束将第一衬底与外延层分离温度不高于第一温度。

17. 发明申请

US20120007109A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120007109A1
公开(公告)日：2012-01-12
申请号：US13237778
申请日：2011-09-20
申请人： Won Cheol SEO , Joon Hee LEE , Jong Kyun YOU , Chang Youn KIM , Jin Cheul SHIN , Hwa Mok KIM , Jang Woo LEE , Yeo Jin YOON , Jong Kyu KIM
发明人： Won Cheol SEO , Joon Hee LEE , Jong Kyun YOU , Chang Youn KIM , Jin Cheul SHIN , Hwa Mok KIM , Jang Woo LEE , Yeo Jin YOON , Jong Kyu KIM
IPC分类号： H01L33/08 , H01L33/36
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括衬底。多个发光单元设置在基板的顶部上以彼此间隔开。每个发光单元包括第一上半导体层，有源层和第二下半导体层。反射金属层位于基板和发光单元之间。防止反射金属层暴露于外部。

18. 发明申请

US20110316026A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20110316026A1
公开(公告)日：2011-12-29
申请号：US13099127
申请日：2011-05-02
申请人： Chang Youn KIM , Joon Hee LEE , Jong Kyun YOU , Hong Chol LIM , Hwa Mok KIM
发明人： Chang Youn KIM , Joon Hee LEE , Jong Kyun YOU , Hong Chol LIM , Hwa Mok KIM
IPC分类号： H01L33/10
CPC分类号： H01L33/10 , H01L33/025 , H01L2933/0091
摘要： An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.
摘要翻译：本发明的示例性实施例涉及一种发光二极管（LED），其包括衬底，布置在衬底上的第一氮化物半导体层，布置在第一氮化物半导体层上的有源层，布置在有源层上的第二氮化物半导体层层，设置在第一氮化物半导体层之间或第二氮化物半导体层和有源层之间的第三氮化物半导体层，在第三氮化物半导体层内包括多个散射元件的第三氮化物半导体层和分布式布拉格反射器 DBR），所述基板布置在所述DBR和所述第三氮化物半导体层之间。

19. 发明申请

US20110053303A1 Method of fabricating semiconductor substrate and method of fabricating light emitting device 有权
公开(公告)号：US20110053303A1
公开(公告)日：2011-03-03
申请号：US12805958
申请日：2010-08-26
申请人： Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
发明人： Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/0079
摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

20. 发明申请

US20110049472A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20110049472A1
公开(公告)日：2011-03-03
申请号：US12942635
申请日：2010-11-09
申请人： Hwa Mok KIM , Dae Won KIM , Dae Sung KAL
发明人： Hwa Mok KIM , Dae Won KIM , Dae Sung KAL
IPC分类号： H01L33/06
CPC分类号： H01L33/465 , H01L33/105 , H01L33/42 , H01L33/46
摘要： A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.
摘要翻译：发光二极管（LED）具有n型半导体层，有源层，p型半导体层和透明电极层。 LED包括介于p型半导体层和透明电极层之间的隧道层，布置在透明电极层中的开口以使隧道层露出，布置在开口中的分布式布拉格反射器（DBR）和电极焊盘，布置在透明电极层上以覆盖开口中的DBR。

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