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    • 12. 发明授权
    • Semiconductor device and a method of fabricating the same
    • 半导体装置及其制造方法
    • US06939776B2
    • 2005-09-06
    • US09988272
    • 2001-11-19
    • Hirotoshi KuboMasanao KitagawaMasahito OndaHiroaki SaitoEiichiroh Kuwako
    • Hirotoshi KuboMasanao KitagawaMasahito OndaHiroaki SaitoEiichiroh Kuwako
    • H01L21/336H01L29/10H01L29/423H01L29/78H01L21/76
    • H01L29/7802H01L29/1095H01L29/41766H01L29/4236H01L29/66719H01L29/66727H01L29/66734H01L29/7813
    • A power MOSFET comprises: a semiconductor substrate 21 of a first conduction type; a drain layer 22 of the first conduction type and formed on a surface layer of the substrate; a gate insulating film 25 formed in a partial region on the drain layer 22; a gate electrode 26 formed on the gate insulating film 25; an insulating film 27 formed on the gate electrode; a side wall insulator 28 formed on side walls of the gate insulating film 25, the gate electrode 26, and the insulating film 27; a recess formed on the drain layer 22 and in a region other than a region where the gate electrode 25 and the side wall insulator 28 are formed; a channel layer 23 of a second conduction type opposite to the first conduction type and formed in a range from the region where the recess is formed to a vicinity of the region where the gate electrode 26 is formed; a source region layer 24 of the one conduction type and formed on the channel layer 23 outside the recess; and a wiring layer 29 formed to cover the channel layer 23 which is exposed through the recess, the side wall insulator 28, and the insulating film.
    • 功率MOSFET包括:第一导电类型的半导体衬底21; 第一导电类型的漏极层22,并形成在衬底的表面层上; 形成在漏极层22的局部区域中的栅极绝缘膜25; 形成在栅极绝缘膜25上的栅电极26; 形成在栅电极上的绝缘膜27; 形成在栅极绝缘膜25,栅电极26和绝缘膜27的侧壁上的侧壁绝缘体28; 在漏极层22上形成的凹部和形成有栅电极25和侧壁绝缘体28的区域以外的区域; 与第一导电型相反的第二导电类型的沟道层23形成在从形成凹部的区域到形成栅电极26的区域附近的范围内; 一个导电类型的源极区24,并形成在凹槽外部的沟道层23上; 以及形成为覆盖通过凹部暴露的沟道层23,侧壁绝缘体28和绝缘膜的布线层29。
    • 13. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20050139947A1
    • 2005-06-30
    • US10953073
    • 2004-09-30
    • Tetsuya OkadaHiroaki Saito
    • Tetsuya OkadaHiroaki Saito
    • H01L21/329H01L29/47H01L29/861H01L29/872
    • H01L29/66143H01L29/861H01L29/872
    • A Schottky barrier diode in which a p+-type semiconductor layer is provided in an n−-type epitaxial layer can realize lowering the forward voltage VF without considering leak current IR. However, when compared with a normal Schottky barrier diode, the forward voltage VF is generally high. When a Schottky metal layer is suitably selected, although the forward voltage VF can be reduced, there is a limit in further reduction. On the other hand, when the resistivity of the n−-type semiconductor layer is reduced, although the forward voltage VF can be realized, there is a problem that breakdown voltage is deteriorated. In a semiconductor device of the invention, a second n−-type semiconductor layer having a low resistivity is laminated on a first n−-type semiconductor layer capable of securing a specified breakdown voltage. P+-type semiconductor regions are made to have depths equal to or slightly deeper than the second n−-type semiconductor layer. By this, in a Schottky barrier diode in which leak current IR can be suppressed by pinch off of a depletion layer, the forward voltage VF can be reduced and the specified breakdown voltage can be secured.
    • 其中p型+型半导体层设置在n +型超导外延层中的肖特基势垒二极管可以在不考虑漏电流IR的情况下实现降低正向电压VF。 然而,当与正常肖特基势垒二极管相比时,正向电压VF通常较高。 当适当地选择肖特基金属层时,尽管可以减小正向电压VF,但是进一步减少是有限制的。 另一方面,当降低n +型半导体层的电阻率时,虽然可以实现正向电压VF,但存在击穿电压恶化的问题。 在本发明的半导体器件中,具有低电阻率的第二n + O - 型半导体层被层叠在第一n + 击穿电压。 使P + + H型半导体区域的深度等于或略深于第二n +型半导体层。 由此,在可以通过耗尽层的夹断来抑制漏电流IR的肖特基势垒二极管中,可以减小正向电压VF,并且可以确保规定的击穿电压。
    • 15. 发明授权
    • Oxygen generating electrode
    • 产氧电极
    • US5294317A
    • 1994-03-15
    • US28805
    • 1993-03-10
    • Hiroaki SaitoYukio KawashimaKazuhide Ohe
    • Hiroaki SaitoYukio KawashimaKazuhide Ohe
    • C25B11/04C25B11/06C25B11/00
    • C25B11/0484
    • An oxygen generating electrode has on a conductive substrate a first layer of metallic platinum and tantalum oxide containing 80-99 mol% of Ta and 20-1 mol% of Pt, a second layer of iridium oxide and tantalum oxide containing 80-99.9 mol% of Ir and 20-0.1 mol% of Ta, and preferably a third layer of iridium oxide and tantalum oxide containing 40-79.9 mol% of Ir and 60-20.1 mol% of Ta. In another embodiment, the first layer consists of iridium oxide and tantalum oxide and contains 14-8.4 mol% of Ir and 86-91.6 mol% of Ta. The electrode, when used as an anode in electrolysis with concomitant oxygen generation, can be used for an extended period at a low bath voltage. It is adapted for electrolysis at a high current density of more than 100 A/cm.sup.2 since it maintains mechanical strength and has a long effective life. It experiences a minimal change of oxygen overvoltage with time.
    • 氧发生电极在导电基板上具有第一层金属铂和氧化钽,其含有80-99mol%的Ta和20-1mol%的Pt,第二层氧化铱和氧化钽含有80-99.9mol% 的Ir和20〜0.1mol%的Ta,优选为含有40〜79.9mol%的Ir和60〜20.1mol%的Ta的氧化铱和氧化钽的第三层。 在另一个实施方案中,第一层由氧化铱和氧化钽组成,并含有14-8.4mol%的Ir和86-91.6mol%的Ta。 该电极在电解时伴随氧气生成时用作阳极,可以在较低的浴电压下长时间使用。 它适用于高电流密度大于100A / cm2的电解,因为它保持机械强度并具有长的有效寿命。 氧气过电压随时间的变化很小。
    • 16. 发明申请
    • METHOD OF MANUFACTURING BLADE RUBBER AND WIPER BLADE
    • 制造叶片橡胶和刮刀叶片的方法
    • US20110119857A1
    • 2011-05-26
    • US13055057
    • 2009-07-17
    • Norihito MizoteHiroaki SaitoToru Soda
    • Norihito MizoteHiroaki SaitoToru Soda
    • B60S1/38B29C47/00
    • B60S1/3877B60S1/381B60S2001/3829B60S2001/3836B60S2001/3898C08K3/04C08K5/01C08K5/14Y10T428/31855
    • A blade rubber having both of superior durability and wiping performance can be manufactured by using a non-diene-based rubber without environmental burden. A pair of blade-rubber molded bodies molded from the non-diene-based rubber is subjected to an irradiation treatment to generate radical active sites, and monomers are bound by graft polymerization as beginning at the radical active sites. Also, the monomers are adhered on a surface of the blade rubber either before or after the generation of the radical active sites. The irradiation treatment and the graft polymerization may be simultaneously performed or independently performed in this order. In this manner, a surface treatment for reducing friction of the non-diene-based rubber having superior durability can be performed without halogen, and therefore, a blade rubber having superior durability and wiping performance can be manufactured.
    • 具有优异的耐久性和擦拭性能的刀片橡胶可以通过使用不带环境负荷的非二烯类橡胶来制造。 对由非二烯类橡胶成型的一对刀片橡胶成型体进行照射处理,生成自由基活性部位,单体在自由基活性部位开始接枝聚合。 此外,单体在产生基团活性部位之前或之后粘附在刮片橡胶的表面上。 照射处理和接枝聚合可以按顺序同时进行或独立地进行。 以这种方式,可以在没有卤素的情况下进行用于降低耐久性优异的非二烯系橡胶的摩擦的表面处理,因此,可以制造具有优异的耐久性和擦拭性能的刮板橡胶。
    • 18. 发明授权
    • Hydrodynamic bearing type rotary device and recording and reproducing apparatus including the same
    • 流体动力轴承型旋转装置及包括其的记录和再现装置
    • US07883270B2
    • 2011-02-08
    • US11812170
    • 2007-06-15
    • Takafumi AsadaHiroyuki KiriyamaHiroaki SaitoDaisuke Ito
    • Takafumi AsadaHiroyuki KiriyamaHiroaki SaitoDaisuke Ito
    • F16C32/06
    • F16C17/045F16C17/026F16C33/107F16C2370/12
    • A hydrodynamic bearing type rotary device is configured to prevent air from being trapped inside a bearing and causing the bearing to have oil film rupture and NPPR to deteriorate. In the device, a flange having a shape substantially like a disc is provided integrally with a shaft near its lower portion. A sleeve having a bearing hole is fitted to the shaft so as to be relatively rotatable. Hydrodynamic grooves are provided on at least one of an outer periphery of the shaft and an inner periphery of the sleeve. The flange forms a thrust bearing surface with a lower end surface of the sleeve. Hydrodynamic grooves are provided on at least one of the lower surface of the sleeve and an upper surface of the flange. During rotation of the bearing, the hydrodynamic grooves circulate the lubricant. Capillary pressures at respective portions in the lubricant circulation path have different magnitudes. The principle that air tends to move toward the portion having a smaller capillary pressure is utilized to make it difficult for the air to be trapped inside the bearing and to smoothly discharge the air.
    • 流体动力轴承型旋转装置被构造成防止空气被捕获在轴承内并导致轴承具有油膜破裂和NPPR劣化。 在该装置中,具有基本上类似于盘的形状的凸缘与其下部附近的轴一体设置。 具有轴承孔的套筒被安装在轴上以相对旋转。 流体动力槽设置在轴的外周和套筒的内周中的至少一个上。 凸缘形成具有套筒下端表面的止推轴承表面。 流体动力槽设置在套筒的下表面和凸缘的上表面中的至少一个上。 在轴承旋转期间,流体动力槽使润滑剂循环。 润滑剂循环路径各部分的毛细管压力具有不同的大小。 利用空气倾向于朝向具有较小毛细管压力的部分移动的原理,使得难以将空气捕获在轴承内并平滑地排出空气。
    • 20. 发明申请
    • HYDRODYNAMIC BEARING DEVICE AND DISK ROTATION APPARATUS
    • 水力轴承装置和盘旋转装置
    • US20100085661A1
    • 2010-04-08
    • US12412870
    • 2009-03-27
    • Takafumi ASADAHiroaki SaitoTakao YoshitsuguKeigo KusakaHiroyuki KiriyamaDaisuke Ito
    • Takafumi ASADAHiroaki SaitoTakao YoshitsuguKeigo KusakaHiroyuki KiriyamaDaisuke Ito
    • G11B17/02F16C32/06
    • F16C17/107F16C33/103F16C33/107F16C2370/12
    • In a hydrodynamic bearing device in which a radial bearing face having a dynamic pressure generating groove on a shaft or an inner periphery of a sleeve is provided and a clearance between the shaft and the sleeve is filled with lubricant, an annular depression is provided on one end face of the sleeve adjacent to a rotor hub and a cover plate for covering the depression is attached to the sleeve so as to define a reservoir for the lubricant or air for the purpose of preventing such a risk that absence of an oil film occurs in clearances of a bearing of the hydrodynamic bearing device due to outflow of oil upon forcing of the oil by air received into the bearing. A step portion is provided on the other end face of the sleeve such that the step portion and the reservoir are communicated with each other by a communication hole. During operation of the hydrodynamic bearing device, air in the hydrodynamic bearing device reaches the reservoir via the communication hole so as to be discharged from the reservoir.
    • 在一种流体动力轴承装置中,其中设置有在轴上的动压产生槽或套筒的内周上的径向支承面,并且轴与套筒之间的间隙充满润滑剂,环形凹部设置在一个 与转子轮毂相邻的套筒的端面和用于覆盖凹部的盖板附接到套筒上,以便限定用于润滑剂或空气的储存器,以便防止在油膜中不存在油膜的风险 由于在接收到轴承中的空气迫使油被油流出时,流体动力轴承装置的轴承的间隙。 台阶部设置在套筒的另一端面上,使得台阶部分和储存器通过连通孔相互连通。 在流体动力轴承装置的操作期间,流体动力轴承装置中的空气经由连通孔到达储存器,以便从储存器排出。