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11. 发明授权

US08153992B2 Ionization emitter, ionization apparatus, and method for manufacturing ionization emitter 有权
标题翻译：电离发射器，电离装置和用于制造电离发射器的方法
公开(公告)号：US08153992B2
公开(公告)日：2012-04-10
申请号：US12523725
申请日：2008-01-07
申请人： Shigeyoshi Horiike , Hiroaki Nakanishi
发明人： Shigeyoshi Horiike , Hiroaki Nakanishi
IPC分类号： H01J27/00
CPC分类号： B05B5/025 , B05B5/057
摘要： Provided is an ionization emitter which can reduce a dead volume without deteriorating separating capacity. An ionization emitter (2) is provided with a tip (1) composed of a columnar or conical porous self-standing structure, and a channel for supplying a solution sample into the tip (1) from the base end side of the tip (1). The channel is formed by filling a pipe line with a packing, and the tip (1) is exposed from the pipe line of the channel. The packing and the porous self-standing structure constituting the tip (1) have an integrated structure composed of a same porous body formed at the same time.
摘要翻译：提供了一种电离发射器，其可以在不降低分离能力的情况下减少死体积。离子化发射体（2）具有由柱状或圆锥形的多孔自立结构构成的尖端（1）和用于从顶端（1）的基端侧将溶液样品供给到尖端（1）的通道）。通道用填料填充管线形成，并且尖端（1）从通道的管线露出。构成尖端（1）的填料和多孔自立结构具有由同时形成的同一多孔体组成的一体结构。

12. 发明申请

US20110288667A1 INDUSTRIAL ROBOT SYSTEM 有权
标题翻译：工业机器人系统
公开(公告)号：US20110288667A1
公开(公告)日：2011-11-24
申请号：US13147415
申请日：2010-02-10
申请人： Akio Noda , Haruhisa Okuda , Kenichi Tanaka , Tetsuo Sawaragi , Hiroshi Matsuhisa , Yasuyoshi Yokokouji , Hideo Utsuno , Masaharu Komori , Hajime Mizuyama , Hiroaki Nakanishi , Yukio Horiguchi , Takehisa Kouda , Kazuhiro Izui
发明人： Akio Noda , Haruhisa Okuda , Kenichi Tanaka , Tetsuo Sawaragi , Hiroshi Matsuhisa , Yasuyoshi Yokokouji , Hideo Utsuno , Masaharu Komori , Hajime Mizuyama , Hiroaki Nakanishi , Yukio Horiguchi , Takehisa Kouda , Kazuhiro Izui
IPC分类号： B25J9/06 , B25J13/02 , B25J13/08
CPC分类号： B25J9/1661 , G05B19/42 , G05B2219/36404 , G05B2219/39527 , G05B2219/40111 , G05B2219/40613
摘要： Provided is an industrial robot system which enables a reduction in an installation/adjustment period, and an increase in a no-error continuous operation period, and includes an action planning section (4) for temporary halts, an error-inducing-task restraining section (5), a section (6) for teaching task, an operation mastering section (7), a hand library (8), an optimum-task-operation generating section (11), a specific task library (9), an error-recovery-task teaching section (12), an error recovery library (10), a finger-eye-camera measurement section (32), a three-dimensional recognition section (33), a controller (30), a manipulator (31), and a universal hand contained in a manipulation device group (34).
摘要翻译：提供一种工业机器人系统，其能够减少安装/调整周期，并且增加无错误的连续运行时间，并且包括用于暂时停止的动作规划部（4），误差诱导任务抑制部（5），用于教学任务的部分（6），操作母版部分（7），手库（8），最佳任务操作生成部分（11），特定任务库（9），错误（12），错误恢复库（10），手指相机测量部分（32），三维识别部分（33），控制器（30），操纵器（31））和包含在操纵装置组（34）中的通用手。

13. 发明申请

US20110100840A1 FLOW CELL, APPARATUS FOR CONCENTRATING RADIOACTIVE FLUORIDE ANION, AND METHOD OF CONCENTRATING RADIOACTIVE FLUORIDE ANION 有权
标题翻译：用于浓缩放射性氟化物阴离子的流动池，用于浓缩放射性氟化物阴离子的方法
公开(公告)号：US20110100840A1
公开(公告)日：2011-05-05
申请号：US12674001
申请日：2007-08-31
申请人： Hiroaki Nakanishi , Satoshi Konishi , Keisuke Naka
发明人： Hiroaki Nakanishi , Satoshi Konishi , Keisuke Naka
IPC分类号： C02F1/461 , C25B9/00 , B32B38/00
CPC分类号： G21G4/00 , B01D59/42 , G21G1/001 , G21G2001/0015 , Y10T156/10
摘要： A flowcell 2 is constituted of insulating substrates 2a and 2b. The two substrates 2a and 2b have been directly bonded to each other by a bonding method for attaining tenacious bonding, for example, anodic bonding or hydrofluoric acid bonding. A channel 6 has been formed at the interface between the substrates 2a and 2b. Part of the substrate 2a which faces the channel 6 has a carbon electrode 4a formed thereon by sintering a pasty carbon material, the electrode 4a extending along the channel 6. On the other hand, the substrate 2b has a groove 6a serving as the channel 6, and has an electrode 4b made of a metal film formed on a bottom surface of the groove 6a.
摘要翻译：流通池2由绝缘基板2a和2b构成。两个基板2a和2b已经通过用于实现顽固结合的接合方法彼此直接接合，例如阳极接合或氢氟酸粘合。在基板2a和2b之间的界面处形成通道6。面向通道6的基板2a的一部分通过烧结糊状碳材料而形成在其上的碳电极4a，电极4a沿通道6延伸。另一方面，基板2b具有用作通道6的槽6a 并且具有由形成在凹槽6a的底表面上的金属膜制成的电极4b。

14. 发明申请

US20100101943A1 RADIOACTIVE FLUORINE ANION CONCENTRATING DEVICE AND METHOD 审中-公开
标题翻译：放射性荧光阴离子浓缩装置及方法
公开(公告)号：US20100101943A1
公开(公告)日：2010-04-29
申请号：US12532957
申请日：2007-03-26
申请人： Ren Iwata , Eiichi Ozeki , Hiroaki Nakanishi , Katsumasa Sakamoto , Ryo Yamahara
发明人： Ren Iwata , Eiichi Ozeki , Hiroaki Nakanishi , Katsumasa Sakamoto , Ryo Yamahara
IPC分类号： G21G4/08
CPC分类号： G21G1/001 , C01B7/20 , G21G2001/0015
摘要： A radioactive fluoride anion concentrating device capable of concentrating 18F− ions speedily and efficiently. A flow cell (11) is composed of a metal plate electrode (21), an insulating sheet (23) and a carbon plate electrode (25) located so that the sides of electrodes may be opposed to each other with the insulating sheet (23) inserted between them. An example of the plate metal plate electrode (21) is obtained by forming a film of metallic material on an insulation plate, and an example of the insulating sheet (23) is a PDMS from which a groove being a channel (26) having a thickness of ≦500 μm is cut out. The thickness of the sheet is desirably about 100 μm. The upper and lower sides of the flow cell (11) are fixed by fixing jigs (27) and (29).
摘要翻译：一种能够快速有效地浓缩18F离子的放射性氟化物阴离子浓缩装置。流动池（11）由金属板电极（21），绝缘片（23）和碳板电极（25）构成，使得电极的侧面可以用绝缘片（23）彼此相对）插入它们之间。通过在绝缘板上形成金属材料膜，得到板状金属板电极（21）的一例，绝缘片（23）的一个例子是PDMS，作为沟道（26）的槽，具有切割厚度为＆amp; 500;500μm。片材的厚度优选为约100μm。流动池（11）的上侧和下侧通过固定夹具（27）和（29）固定。

15. 再颁专利

USRE40917E1 Memory configuration of a composite memory device 有权
公开(公告)号：USRE40917E1
公开(公告)日：2009-09-15
申请号：US10613352
申请日：2003-07-03
申请人： Minoru Fukuda , Hiroaki Nakanishi , Kunio Matsudaira , Masahiro Matsuo , Hirohisa Abe
发明人： Minoru Fukuda , Hiroaki Nakanishi , Kunio Matsudaira , Masahiro Matsuo , Hirohisa Abe
IPC分类号： G11C16/04
CPC分类号： G11C16/16
摘要： The present invention is related to a composite flash memory device comprises a plural sector flash memory array which is divided to plural sector that is a minimum erasing unit of the flash memory device, a flash memory array storing control commands which control a total system of the composite flash memory device and/or the only composite flash memory device in and sharing I/O line of the plural sector flash memory array, the read operation of the flash memory array is enable when the plural sector flash memory array is gained access.

16. 发明授权

US07483312B2 Memory configuration of a composite memory device 有权
公开(公告)号：US07483312B2
公开(公告)日：2009-01-27
申请号：US10409353
申请日：2003-04-08
申请人： Minoru Fukuda , Hiroaki Nakanishi , Kunio Matsudaira , Masahiro Matsuo , Hirohisa Abe
发明人： Minoru Fukuda , Hiroaki Nakanishi , Kunio Matsudaira , Masahiro Matsuo , Hirohisa Abe
IPC分类号： G11C16/04
CPC分类号： G11C16/16
摘要： The present invention is related to a composite flash memory device comprises a plural sector flash memory array which is divided to plural sector that is a minimum erasing unit of the flash memory device, a flash memory array storing control commands which control a total system of the composite flash memory device and/or the only composite flash memory device in and sharing I/O line of the plural sector flash memory array, the read operation of the flash memory array is enable when the plural sector flash memory array is gained access.

17. 发明申请

US20050275041A1 Semiconductor device and its manufacturing method 失效
公开(公告)号：US20050275041A1
公开(公告)日：2005-12-15
申请号：US11206124
申请日：2005-08-18
申请人： Moriya Iwai , Masaaki Yoshida , Hiroaki Nakanishi
发明人： Moriya Iwai , Masaaki Yoshida , Hiroaki Nakanishi
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L21/8238
CPC分类号： H01L27/11526 , H01L27/115 , H01L27/11521 , H01L27/11534 , H01L27/11558 , H01L29/42324 , H01L29/7883
摘要： A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a memory unit region of a field oxide film, and an inter-layer silicon oxide film is formed on its surface. A gate oxide film for a non-volatile memory is formed on a P substrate between N type diffusion layers. The floating gate is formed on the inter-layer silicon oxide film, the field oxide film, and the gate oxide film for the non-volatile memory. Since a large coupling ratio between the control gate and the floating gate is available on the field oxide film, memory rewriting requires only a low voltage. Further, since the control gate is formed by a poly silicon film, both a positive voltage and a negative voltage can be applied to the control gate.

18. 发明授权

US06756577B2 Light detector and light detecting IC therefor 有权
标题翻译：光检测器和光检测IC
公开(公告)号：US06756577B2
公开(公告)日：2004-06-29
申请号：US09994372
申请日：2001-11-26
申请人： Hiroaki Nakanishi , Susumu Mizuhara
发明人： Hiroaki Nakanishi , Susumu Mizuhara
IPC分类号： H01J4014
CPC分类号： G01D5/34
摘要： A light detecting IC has a single light receiving element, a first signal processing circuit for processing signals outputted from this light receiving element, a pair of input terminals for receiving signals from outside, a second signal processing circuit for processing signals received from outside through the input terminals, and a switch circuit for selecting one from these two signal processing circuits and outputting results of processing by the selected signal processing circuit. A divided photodiode with two light receiving elements may be connected to the input terminals. Alternatively, another light receiving element which has a larger light receiving surface than the single light receiving element installed on the IC may be connected to one of the pair of input terminals.
摘要翻译：光检测IC具有单个光接收元件，用于处理从该光接收元件输出的信号的第一信号处理电路，用于从外部接收信号的一对输入端子，用于处理从外部接收的信号的第二信号处理电路输入端子和用于从这两个信号处理电路中选择一个信号处理电路并输出所选信号处理电路的处理结果的开关电路。具有两个光接收元件的分光电二极管可以连接到输入端子。或者，具有比安装在IC上的单个光接收元件更大的光接收表面的另一个光接收元件可以连接到该对输入端中的一个。

19. 发明授权

US06720545B2 Photoelectric sensor, control method therefor and semiconductor integrated circuit therefor 有权
标题翻译：光电传感器及其控制方法及其半导体集成电路
公开(公告)号：US06720545B2
公开(公告)日：2004-04-13
申请号：US10132068
申请日：2002-04-24
申请人： Susumu Mizuhara , Arata Nakamura , Hiroaki Nakanishi , Toshiaki Koya
发明人： Susumu Mizuhara , Arata Nakamura , Hiroaki Nakanishi , Toshiaki Koya
IPC分类号： H01J4014
CPC分类号： G01J1/46 , G01J1/32
摘要： A photoelectric sensor transmits pulsed light repetitively, receives light which may include noise and generates a corresponding electrical reception signal. The level of reception signal is compared with a specified threshold value at a timing which is slightly delayed from the timing of light transmission. A sensor output is generated on the basis of the result of this comparison. If periodically changing noise is present and the reception signal has an AC waveform, the level of the reception signal is compared with another threshold value proximal to an AC zero level. The timing of next light transmission is controlled on the basis of the result of the second comparison.
摘要翻译：光电传感器重复地发送脉冲光，接收可能包含噪声的光并产生相应的电接收信号。接收信号的电平在与光传输的定时稍微延迟的定时与规定的阈值进行比较。基于该比较的结果生成传感器输出。如果存在周期性变化的噪声并且接收信号具有AC波形，则将接收信号的电平与接近AC零电平的另一阈值进行比较。基于第二次比较的结果来控制下一次光传输的定时。

20. 发明授权

US6115292A Memory configuration of a composite memory device 失效
公开(公告)号：US6115292A
公开(公告)日：2000-09-05
申请号：US080696
申请日：1998-05-18
申请人： Minoru Fukuda , Hiroaki Nakanishi , Kunio Matsudaira , Masahiro Matsuo , Hirohisa Abe
发明人： Minoru Fukuda , Hiroaki Nakanishi , Kunio Matsudaira , Masahiro Matsuo , Hirohisa Abe
IPC分类号： G11C16/02 , G11C16/16 , G11C16/04
CPC分类号： G11C16/16
摘要： The present invention is related to a composite flash memory device comprises a plural sector flash memory array which is divided to plural sector that is a minimum erasing unit of the flash memory device, a flash memory array storing control commands which control a total system of the composite flash memory device and/or the only composite flash memory device in and sharing I/O line of the plural sector flash memory array, the read operation of the flash memory array is enable when the plural sector flash memory array is gained access.

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