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11. 发明申请

WO2004095662A2 BANDGAP ENGINEERING 审中-公开
标题翻译： BANDGAP工程
公开(公告)号：WO2004095662A2
公开(公告)日：2004-11-04
申请号：PCT/GB2004/001727
申请日：2004-04-23
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John , LAM, Yee, Loy , CHAN, Yuen, Chuen
发明人： LAM, Yee, Loy , CHAN, Yuen, Chuen
IPC分类号： H01S5/00
CPC分类号： H01L21/182 , B82Y20/00 , G02F1/01708 , H01S5/0264 , H01S5/0265 , H01S5/34 , H01S5/3414 , H01S5/4087
摘要： A method for achieving large localized bandgap energy differences at the wafer-level scale, with fine bandgap control, through a combination of regrowth and quantum well intermixing processes. The technique allows fabrication of a photonic integrated circuit on a wafer, wherein epitaxial layers of different composition are formed on separate regions to optimise the associated energy bandgap at a different centre wavelength. Quantum well intermixing of those parts of the structure containing quantum wells allows localised fine tuning of the bandgap, either to correct for inaccuracies during deposition or growth, or intentionally to detune the bandgap to achieve a certain functionality such as greater transparency or responsivity.
摘要翻译：通过再生长和量子阱混合过程的组合，通过精细的带隙控制，在晶圆级尺度上实现大的局部带隙能量差异的方法。该技术允许在晶片上制造光子集成电路，其中不同组成的外延层形成在不同的区域上，以在不同的中心波长处优化相关联的能带隙。包含量子阱的结构的这些部分的量子阱混合允许带隙的局部微调，以校正沉积或生长期间的不准确性，或有意地去除带隙以实现某些功能，例如更大的透明度或响应性。

12. 发明申请

WO2003062910A1 ELECTROABSORPTION MODULATOR WITH TWO SECTIONS 审中-公开
标题翻译：具有两个部分的电子调制器
公开(公告)号：WO2003062910A1
公开(公告)日：2003-07-31
申请号：PCT/GB2003/000116
申请日：2003-01-15
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John , LAM, Yee, Loy , NAKAMURA, Hiroshi , CHAN, Yuen, Chuen
发明人： LAM, Yee, Loy , NAKAMURA, Hiroshi , CHAN, Yuen, Chuen
IPC分类号： G02F1/017
CPC分类号： B82Y20/00 , G02F1/01708 , G02F2201/127 , G02F2201/16 , G02F2203/25
摘要： The invention relates to an electroabsorption modulator (EAM) (300), comprising a first EAM section (302) optically coupled to a second EAM section (304), a transition wavelength in the electroabsorption (EA) spectrum of the first EAM section (302), at which absorption changes substantially, being different to a transition wavelength in the EA spectrum of the second EAM section (304). The EAM (300) compensates for chirp (which is caused by intrinsic absorption effects) by driving the two sections with a signal (312) generated from a common modulating signal (314). The driving signal (312) at the first EAM section (302) being preferably in anti-phase with the driving signal (312) at the second EAM section (304).
摘要翻译：本发明涉及电吸收调制器（EAM）（300），其包括光耦合到第二EAM部分（304）的第一EAM部分（302），第一EAM部分（302）的电吸收（EA）光谱中的跃迁波长），其吸收基本变化，不同于第二EAM部分（304）的EA光谱中的跃迁波长。 EAM（300）通过用从公共调制信号（314）产生的信号（312）驱动两个部分来补偿啁啾（其由本征吸收效应引起的）。第一EAM部分（302）处的驱动信号（312）优选地与第二EAM部分（304）处的驱动信号（312）反相。

13. 发明申请

WO2003048823A2 STANDOFFS FOR PASSIVE ALIGNMENT OF SEMICONDUCTOR CHIP AND COUPLING BENCH 审中-公开
标题翻译：半导体芯片和耦合基板被动对准的标准
公开(公告)号：WO2003048823A2
公开(公告)日：2003-06-12
申请号：PCT/GB2002/005296
申请日：2002-11-25
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John
发明人： LIM, Hwi, Siong , CHA CHER LIANG, Randall , LAM, Yee, Loy , TEO KIAN HIN, Victor
IPC分类号： G02B6/136
CPC分类号： G02B6/423 , G02B6/42
摘要： Disclosed is a method for forming a first optical device and a vertical stand-off on adjacent regions of a substrate. The method comprises the steps of: depositing subsequent layers of optical materials on the substrate and defining features of the optical device by masking and etching regions of at least one layer; defining the transverse extent of the stand-off by protectively masking a separate region of the or each layer that is etched; modifying the relative thickness of an upper section of the stand-off and the first optical device so that a second optical device subsequently supported by the stand-off is in close optical alignment with the first optical device; and etching a trench through one or more layers of material between the vertical stand-off and the first optical device. Also disclosed is an optical assembly comprising a first optical device and at least one vertical stand-off formed on adjacent regions of a substrate.
摘要翻译：公开了一种用于在基板的相邻区域上形成第一光学器件和垂直间隔的方法。该方法包括以下步骤：通过掩蔽和蚀刻至少一层的区域，将后续的光学材料层沉积在衬底上并限定光学器件的特征; 通过保护性地掩蔽被蚀刻的每个层的单独区域来限定支座的横向范围; 改变支架的上部和第一光学装置的相对厚度，使得随后由支架支撑的第二光学装置与第一光学装置紧密地对准; 以及在所述垂直支座和所述第一光学装置之间通过一层或多层材料蚀刻沟槽。还公开了一种光学组件，其包括形成在衬底的相邻区域上的第一光学器件和至少一个垂直支座。

14. 发明申请

WO03048820A2 OPTICAL INTERFACE UTILISING POLYMER ASSISTED STRAIN RELIEF 审中-公开
标题翻译：光学接口利用聚合物辅助应变消除
公开(公告)号：WO03048820A2
公开(公告)日：2003-06-12
申请号：PCT/GB0205345
申请日：2002-11-27
申请人： DENSELIGHT SEMICONDUCTORS PTE , FINNIE PETER JOHN
发明人： LAM YEE LOY , TEO KIAN HIN VICTOR , CHONG POH LIN
IPC分类号： G02B6/42 , G02B6/00
CPC分类号： G02B6/4248
摘要： Disclosed is a strain relief interface for connecting a packaged optical device and an optical fibre. The optical fibre passes through a snout bore extending from a side wall of the package. The interface comprises two moulded jackets. The first moulded jacket surrounds, and is affixed to, a sheathed section of optical fibre from which a fibre jacket has been removed. A first end of the first moulded jacket is affixed to a fibre jacket that encases an adjacent section of optical fibre. A second end of the first moulded jacket is affixed to the snout bore and to a ferrule located within the snout bore. The second moulded jacket surrounds, and is affixed to, the first moulded jacket, a portion of the fibre jacket and the snout bore. Also disclosed is a method for fabricating a strain relief interface.
摘要翻译：公开了一种用于连接封装的光学器件和光纤的应变消除接口。光纤通过从封装的侧壁延伸的鼻孔。接口包括两个模制夹套。第一个模制护套环绕并固定在已经被去除纤维护套的光纤的护套部分上。第一模制护套的第一端被固定到包围相邻部分光纤的纤维护套。第一模制护套的第二端固定到鼻孔和位于鼻孔内的套圈。第二模制护套围绕并固定到第一模制护套，纤维护套和鼻孔的一部分。还公开了一种制造应变消除界面的方法。

15. 发明申请

WO2003034114A3 PLANAR WAVEGUIDE FACET PROFILING 审中-公开
公开(公告)号：WO2003034114A3
公开(公告)日：2003-04-24
申请号：PCT/GB2002/004634
申请日：2002-10-14
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD. , FINNIE, Peter, John
发明人： LAM, Yee, Loy , LEONG, Woon, Loong, Daniel , CHAN, Yuen, Chuen
IPC分类号： G02B6/124
摘要： In the present invention, profiling of the end facet of an optical waveguide reduces the amount of reflected light propagating in the waveguide. In a conventional waveguide, the effective reflectivity experienced by light at a facet is determined by the modal content of the light and the refractive index of the waveguide (core and cladding) and other material at either side of the dielectric interface, which constitutes the facet. In the present invention, depending upon the modal content of the light, the waveguide dimensions and the refractive indices at the dielectric interfaces, we adjust the profile of the facets so that it is no longer planar and so substantially reduce the amount of reflected light propagating back along the waveguide. This reduction in "effective reflectivity" can be due to an increase in the loss experienced by any reflected light or due to an increase in the amount of light transmitted.

16. 发明申请

WO2003048823A3 STANDOFFS FOR PASSIVE ALIGNMENT OF SEMICONDUCTOR CHIP AND COUPLING BENCH 审中-公开
公开(公告)号：WO2003048823A3
公开(公告)日：2003-06-12
申请号：PCT/GB2002/005296
申请日：2002-11-25
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John
发明人： LIM, Hwi, Siong , CHA CHER LIANG, Randall , LAM, Yee, Loy , TEO KIAN HIN, Victor
IPC分类号： G02B6/136
摘要： Disclosed is a method for forming a first optical device (128) and a vertical stand-off (126) on adjacent regions of a substrate. The method comprises the steps of: depositing subsequent layers of optical materials on the substrate and defining features of the optical device by masking and etching regions of at least one layer; defining the transverse extent of the stand-off by protectively masking a separate region of the or each layer that is etched; modifying the relative thickness of an upper section of the stand-off and the first optical device so that a second optical device (200) subsequently supported by the stand-off is in close optical alignment with the first optical device; and etching a trench through one or more layers of material between the vertical stand-off and the first optical device. Also disclosed is an optical assembly comprising a first optical device and at least one vertical stand-off formed on adjacent regions of a substrate.

17. 发明申请

WO2003044504A3 OPTICAL PROBE FOR WAFER SCALE TESTING OF LIGHT-ELECTRICAL (L-I-V) PERFORMANCE OF OPTOELECTRONIC DEVICES 审中-公开
公开(公告)号：WO2003044504A3
公开(公告)日：2003-05-30
申请号：PCT/GB2002/005191
申请日：2002-11-18
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John , LAM, Yee, Loy , CHAN, Yuen, Chuen , CHOO, Lay, Cheng , NG, Seng, Lee
发明人： LAM, Yee, Loy , CHAN, Yuen, Chuen , CHOO, Lay, Cheng , NG, Seng, Lee
IPC分类号： G02B6/42
摘要： A method of testing an edge-emitting or edge-coupled opto-electronic device comprises the step of aligning an optical probe with an optical interface of the device so that light is coupled between the optical interface and the optical probe, wherein the optical probe comprises an optical fibre having a light turning structure at a distal tip that changes the direction of propagation of light incident on the light turning structure.

18. 发明申请

WO2003044504A2 WAFER SCALE L-I-V PROBING 审中-公开
标题翻译： WAFER SCALE L-I-V探测
公开(公告)号：WO2003044504A2
公开(公告)日：2003-05-30
申请号：PCT/GB2002/005191
申请日：2002-11-18
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John , LAM, Yee, Loy , CHAN, Yuen, Chuen , CHOO, Lay, Cheng , NG, Seng, Lee
发明人： LAM, Yee, Loy , CHAN, Yuen, Chuen , CHOO, Lay, Cheng , NG, Seng, Lee
IPC分类号： G01N21/85
CPC分类号： G02B6/4214 , G01N2201/08
摘要： A method of testing an edge-emitting or edge-coupled opto-electronic device comprises the step of aligning an optical probe with an optical interface of the device so that light is coupled between the optical interface and the optical probe, wherein the optical probe comprises an optical fibre having a light turning structure at a distal tip that changes the direction of propagation of light incident on the light turning structure.
摘要翻译：测试边缘发射或边缘耦合的光电子器件的方法包括将光学探针与器件的光学接口对准的步骤，使得光耦合在光学接口和光学探针之间，其中光学探针包括光纤在远端具有光转向结构，其改变入射在光转向结构上的光的传播方向。

19. 发明申请

WO2003032453A2 TWO-SECTION DISTRIBUTED BRAGG REFLECTOR LASER 审中-公开
标题翻译：两部分分布式反射镜激光器
公开(公告)号：WO2003032453A2
公开(公告)日：2003-04-17
申请号：PCT/GB2002/004544
申请日：2002-10-07
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD. , FINNIE, Peter, John
发明人： LAM, Yee, Loy , CHAN, Yuen, Chuen , ONG, Teik, Kooi , LIM, Hwi, Siong , CHOO, Lay, Cheng , TAN, Peh, Wei
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/06256 , H01S5/065 , H01S5/0654 , H01S5/0683 , H01S5/0687 , H01S5/125 , H01S5/3413
摘要： There is provided a semiconductor laser comprising a gain section and an adjacent Bragg section, wherein output laser light is emitted via a facet at an interface between air and the gain section, the Bragg section comprising a distributed reflecting structure having a length substantially greater than required to ensure single longitudinal mode operation of the laser in which the side-mode suppression ratio (SMSR) is 35 dB or more, thereby in use substantially suppressing optical feedback from a facet at an interface between the Bragg section and air, and wherein an interface between the Bragg section and the gain is quantum well intermixed, thereby rendering the interface substantially anti-reflecting at the wavelength of the laser.
摘要翻译：提供了一种包括增益部分（10）和相邻布拉格部分（11）的半导体激光器，其中输出激光经由空气与增益部分（17）之间的界面处的刻面发射，布拉格部分包括分布反射结构（12）的长度显着大于确保侧模抑制比（SMSR）为35dB或更大的激光器的单纵模运行所需的长度，从而在使用上基本上抑制了从小平面（18）的光学反馈）布拉格部分和空气之间的界面处，并且其中布拉格部分和增益之间的界面是量子阱良好的混合，从而使界面在激光的波长处基本上防反射。

20. 发明申请

WO2003025650A3 AN OPTICAL COUPLING MOUNT 审中-公开
公开(公告)号：WO2003025650A3
公开(公告)日：2003-03-27
申请号：PCT/GB2002/004159
申请日：2002-09-12
申请人： NANYANG TECHNOLOGICAL UNIVERSITY , FINNIE, Peter, John
发明人： LAM, Yee, Loy , TAN, Peh, Wei , ZHOU, Yan
IPC分类号： G02B6/42
摘要： An optical coupling mount for use in coupling light between a semiconductor waveguide device (2, 42) and an optical fibre comprises a silica based spot size converter (3, 43) located on an optical bench (1, 40) with a trench (8, 47) and grooves (9, 48), whereby the semiconductor device (2, 42) can be positioned in close alignment with the spot size converter (3). The spot size converter (3) comprises a tapered upper waveguide (4, 45) located above a non-tapered lower waveguide (6, 44). The dimensions of the spot size converter (3) are such that a semiconductor device emitting a small, astigmatic optical beam can be efficiently coupled to a single mode fibre requiring a larger, concentric beam.

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