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11. 发明授权

US06472243B2 Method of forming an integrated CMOS capacitive pressure sensor 有权
标题翻译：形成集成CMOS电容式压力传感器的方法
公开(公告)号：US06472243B2
公开(公告)日：2002-10-29
申请号：US09734473
申请日：2000-12-11
申请人： Bishnu P. Gogoi , David J. Monk , David W. Odle , Kevin D. Neumann , Donald L. Hughes, Jr. , John E. Schmiesing , Andrew C. McNeil , Richard J. August
发明人： Bishnu P. Gogoi , David J. Monk , David W. Odle , Kevin D. Neumann , Donald L. Hughes, Jr. , John E. Schmiesing , Andrew C. McNeil , Richard J. August
IPC分类号： H01L2100
CPC分类号： G01L9/0073 , H01L27/0617
摘要： A capacitive pressure sensor (10) utilizes a diaphragm (38) that is formed along with forming gates (56,57) of active devices on the same semiconductor substrate (11).
摘要翻译：电容式压力传感器（10）利用与同一半导体衬底（11）上的有源器件的形成门（56,57）一起形成的隔膜（38）。

12. 发明授权

US06314371B1 Dual sensor signal processing method for on-bottom cable seismic wave detection 有权
标题翻译：双传感器信号处理方法，用于底层电缆地震波检测
公开(公告)号：US06314371B1
公开(公告)日：2001-11-06
申请号：US09598718
申请日：2000-06-21
申请人： David J Monk
发明人： David J Monk
IPC分类号： G01V100
CPC分类号： G01V1/364 , G01V1/36 , G01V2210/56
摘要： A method is disclosed for processing of dual sensor OBC data that corrects for angular incidence angle, corrects for estimated reflectivity, and combines the corrected sensor traces using an optimal diversity scaling technique. In one embodiment, the disclosed method takes seismic traces from a geophone and a hydrophone, corrects the geophone trace for the incidence angle, determines diversity filters for optimally combining the geophone and hydrophone traces, applies the diversity filters, estimates a reflectivity coefficient for the ocean bottom (potentially for different angles of reflection), scales the geophone data according to the reflectivity, and re-applies the diversity filters to obtain a combined trace. The combined trace is expected to have various artifacts eliminated, including ghosting and reverberation, and is expected to have an optimally determined signal-to-noise ratio.
摘要翻译：公开了一种用于处理纠正角入射角的双传感器OBC数据的方法，校正估计的反射率，并且使用最佳分集缩放技术组合校正的传感器迹线。在一个实施例中，所公开的方法采用来自地震检波器和水听器的地震迹线，校正地震检波器轨迹的入射角，确定用于最佳组合地震检波器和水听器迹线的分集滤波器，应用多样性滤波器，估计海洋的反射系数底部（潜在地为不同的反射角度），根据反射率缩放地震检波器数据，并重新应用分集滤波器以获得组合迹线。组合的迹线预期会消除各种伪影，包括重影和混响，并且预期具有最佳确定的信噪比。

13. 发明授权

US6156585A Semiconductor component and method of manufacture 失效
标题翻译：半导体元件及制造方法
公开(公告)号：US6156585A
公开(公告)日：2000-12-05
申请号：US17494
申请日：1998-02-02
申请人： Bishnu P. Gogoi , David J. Monk
发明人： Bishnu P. Gogoi , David J. Monk
IPC分类号： G01L9/12 , G01L9/00 , H01L29/84 , H01L21/00
CPC分类号： G01L9/0042 , G01L9/0073
摘要： A semiconductor component comprises a substrate (101), a two flexible pressure sensor diaphragms (106, 303) supported by the substrate (101), and a fixed electrode (203) between the two diaphragms (106, 303). The two diaphragms (106, 303) and the fixed electrode (203) are electrodes of two differential capacitors. The substrate (101) has a hole (601) extending from one surface (107) of the substrate (101) to an opposite surface (108) of the substrate (101). The hole (601) is located underneath the two diaphragms (106, 303), and the hole (601) at the opposite surfaces (107, 108) of the substrate (101) is preferably larger than the hole (601) at an interior portion of the substrate (101).
摘要翻译：半导体部件包括衬底（101），由衬底（101）支撑的两个柔性压力传感器膜片（106,303）和在两个膜片（106,303）之间的固定电极（203）。两个隔膜（106,303）和固定电极（203）是两个差分电容器的电极。基板（101）具有从基板（101）的一个表面（107）延伸到基板（101）的相对表面（108）的孔（601）。孔（601）位于两个隔膜（106,303）的下方，并且衬底（101）的相对表面（107,108）处的孔（601）优选地大于在内部的孔（601）基板（101）的一部分。

14. 发明授权

US6134941A Method of testing sensors and apparatus therefor 失效
标题翻译：传感器及其设备的测试方法
公开(公告)号：US6134941A
公开(公告)日：2000-10-24
申请号：US46024
申请日：1998-03-23
申请人： Jerry D. Cripe , Theresa A. Maudie , Michael P. Menchio , Dennis M. Stanerson , David J. Monk , James E. Kasarskis , Charles L. Reed, Sr.
发明人： Jerry D. Cripe , Theresa A. Maudie , Michael P. Menchio , Dennis M. Stanerson , David J. Monk , James E. Kasarskis , Charles L. Reed, Sr.
IPC分类号： G01M99/00 , G01N33/00 , G01M19/00 , G01N37/00
CPC分类号： G01M99/002 , G01N33/007
摘要： An apparatus for testing sensors in a media includes a chamber portion (240) for holding the sensors, tanks (320, 340) for supplying the media to the chamber portion (240) and coupled in parallel to the chamber portion (240), a pressure generator (310) coupled to the tanks (320, 340), and a heat exchanger (323, 324) adjacent to the tanks (320, 340). The media is simultaneously heated to different temperatures and pressurized to different pressures in the tanks (320, 340). Then, the media is delivered from the tanks (320, 340) to the chamber portion (240), and the sensors detect the media at the different temperatures and pressures.
摘要翻译：用于测量介质中的传感器的装置包括用于保持传感器的室部分（240），用于将介质供应到室部分（240）并且平行于腔室部分（240）联接的罐（320,340），联接到所述箱（320,340）的压力发生器（310）和与所述箱（320,340）相邻的热交换器（323,324）。介质同时被加热到不同的温度，并在罐（320,340）中加压到不同的压力。然后，将介质从罐（320,340）输送到室部分（240），并且传感器在不同的温度和压力下检测介质。

15. 发明授权

US5623159A Integrated circuit isolation structure for suppressing high-frequency cross-talk 失效
标题翻译：用于抑制高频串扰的集成电路隔离结构
公开(公告)号：US5623159A
公开(公告)日：1997-04-22
申请号：US625685
申请日：1996-04-04
申请人： David J. Monk , Kuntal Joardar
发明人： David J. Monk , Kuntal Joardar
IPC分类号： H01L21/761 , H01L27/06 , H01L27/04
CPC分类号： H01L27/0623 , H01L21/761 , Y10S257/929
摘要： An improved isolation structure for a semiconductor device includes a p-type semiconductor substrate (12) with a p-type well (28) disposed in the substrate (12). A continuous plurality of n-type regions (14, 16, 26) is disposed around the p-type well (28), and the continuous plurality of n-type regions (14, 16, 26) fully isolates the p-type well (28) from the substrate (12) except that the continuous plurality of regions (14, 16, 26) comprises one or more p-type gaps (18) that electrically connect the p-type well (28) to the p-type substrate (12). The use of the gap (18) improves cross-talk suppression in mixed-mode integrated circuits at higher frequencies, for example greater than 50 MHz.
摘要翻译：用于半导体器件的改进的隔离结构包括具有设置在衬底（12）中的p型阱（28）的p型半导体衬底（12）。连续多个n型区域（14,16,26）围绕p型阱（28）设置，并且连续的多个n型区域（14,16,26）将p型阱完全隔离（28）与P型阱（28）电连接的一个或多个p型间隙（18），所述连续多个区域（14,16,26）衬底（12）。间隙（18）的使用改善了混频模式集成电路中在较高频率（例如大于50MHz）下的串扰抑制。

16. 发明授权

US5268312A Method of forming isolated wells in the fabrication of BiCMOS devices 失效
标题翻译：在BiCMOS器件制造中形成隔离阱的方法
公开(公告)号：US5268312A
公开(公告)日：1993-12-07
申请号：US964700
申请日：1992-10-22
申请人： Robert H. Reuss , David J. Monk , Christopher P. Dragon
发明人： Robert H. Reuss , David J. Monk , Christopher P. Dragon
IPC分类号： H01L21/761 , H01L21/8249 , H01L27/06 , H01L21/266
CPC分类号： H01L21/8249 , H01L21/761 , H01L27/0623
摘要： A junction isolated P-well is formed for high performance BiCMOS. Two dopants of opposite conductivity types are implanted and co-diffused inside an annular N-type region to form a narrow N-type buried layer positioned between two P-type regions. N-type buried layer is formed having P-type doped regions above and below the N-type buried layer so that the N-type buried layer is narrow. The P-type region above the N-type buried layer provides for a retrograde profile of the P-well formed above it. Besides the P-well isolation, the P-type region below the N-type buried layer acts as a ground plane which collects noise, which helps to prevent it from being coupled to other devices of the BiCMOS circuit.
摘要翻译：形成了用于高性能BiCMOS的结隔离P阱。相反导电类型的两种掺杂剂被注入并共扩散在环形N型区域内以形成位于两个P型区域之间的窄N型掩埋层。 N型掩埋层在N型掩埋层的上方和下方形成有P型掺杂区域，使得N型掩埋层窄。 N型掩埋层上方的P型区域提供了形成在其上的P阱的逆行剖面。除了P阱隔离之外，N型掩埋层以下的P型区域用作收集噪声的接地平面，这有助于防止其耦合到BiCMOS电路的其他器件。

17. 发明授权

US5138583A Noise attenuation method 失效
标题翻译：噪声衰减法
公开(公告)号：US5138583A
公开(公告)日：1992-08-11
申请号：US704231
申请日：1991-05-22
申请人： Cameron B. Wason , David J. Monk , Robert G. McBeath
发明人： Cameron B. Wason , David J. Monk , Robert G. McBeath
IPC分类号： G01V1/36
CPC分类号： G01V1/364 , G01V2210/3246 , G01V2210/3248
摘要： A method for attenuating coherent and incoherent noise in seismic signal data is provided. Seismic signal data is transformed from a time-space domain using a Radon-transform domain. In the Radon-transform domain, coherent noise is attenuated by muting and incoherent noise is attenuated by diversity stacking. Data remaining in the Radon-transform domain in transformed back to the time-space domain by an inverse Radon transform.

18. 发明申请

US20090215143A1 Controlled alteration of pores using fluid flow and fabrication of articles thereby 有权
标题翻译：使用流体流动控制孔隙的改变，从而制造制品
公开(公告)号：US20090215143A1
公开(公告)日：2009-08-27
申请号：US11658515
申请日：2005-07-26
申请人： David J. Monk , David R. Walt
发明人： David J. Monk , David R. Walt
IPC分类号： C12N13/00 , B05D1/36 , B05D7/22 , B05D5/12 , G01N27/00 , B32B1/08 , G02B27/10
CPC分类号： G01N33/5438 , B01J2219/00439 , B01J2219/0045 , B01J2219/00524 , B01J2219/00653 , Y10T428/13
摘要： The invention relates to microscopic structures and methods of making and using the structures. A method of forming a microscopic structure of a material includes obtaining a solution (310) containing the material, establishing a flowing stream of the solution (310) in a capillary (104), wherein the capillary (104) has an inner dimension that is smaller than about 300 micrometers, and maintaining the stream until a layer is built up along an inner wall of the capillary (104) from material deposited from the flowing stream, thereby forming a microscopic structure.
摘要翻译：本发明涉及微观结构及其制造和使用方法。形成材料的微观结构的方法包括获得含有该材料的溶液（310），在毛细管（104）中形成溶液（310）的流动流，其中毛细管（104）的内部尺寸为小于约300微米，并且保持流，直到沿着毛细管（104）的内壁从流动物料沉积的材料构建层，从而形成微观结构。

19. 发明授权

US06401545B1 Micro electro-mechanical system sensor with selective encapsulation and method therefor 有权
标题翻译：具有选择性封装的微机电系统传感器及其方法
公开(公告)号：US06401545B1
公开(公告)日：2002-06-11
申请号：US09490927
申请日：2000-01-25
申请人： David J. Monk , Song Woon Kim , Kyujin Jung , Bishnu Gogoi , Gordon Bitko , Bill McDonald , Theresa A. Maudie , Dave Mahadevan
发明人： David J. Monk , Song Woon Kim , Kyujin Jung , Bishnu Gogoi , Gordon Bitko , Bill McDonald , Theresa A. Maudie , Dave Mahadevan
IPC分类号： G01L700
CPC分类号： G01L19/0627 , G01L19/0038 , G01L19/147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/14 , H01L2924/00014
摘要： Selective encapsulation of a micro electro-mechanical pressure sensor provides for protection of the wire bands (140) through encapsulation while permitting the pressure sensor diaphragm (121) to be exposed to ambient pressure without encumbrance or obstruction. Selective encapsulation is made possible by the construction of a protective dam (150) around the outer perimeter of a pressure sensor diaphragm (121) to form a wire bond cavity region between the protective dam (150) and the device housing (105). The wire bond cavity may be encapsulated with an encapsulation gel (160) or by a vent cap (170). Alternatively, the protective dam (150) may be formed by a glass frit pattern (152) bonding a cap wafer (151) to a device wafer (125) and then dicing the two-wafer combination into individual dies with protective dams attached.
摘要翻译：微机电压力传感器的选择性封装通过封装提供对线束（140）的保护，同时允许压力传感器隔膜（121）暴露于环境压力而不会产生负担或阻塞。通过在压力传感器隔膜（121）的外周周围构造保护水坝（150），以在保护水坝（150）和设备壳体（105）之间形成引线接合空腔区域，可以实现选择性封装。引线键合腔可以用封装凝胶（160）或通气孔（170）封装。或者，保护堤（150）可以通过将盖晶片（151）接合到装置晶片（125）的玻璃料图案（152）形成，然后将双晶片组合切割成具有附接的保护性坝的各个模具。

20. 发明授权

US5994161A Temperature coefficient of offset adjusted semiconductor device and method thereof 失效
标题翻译：偏移调整半导体器件的温度系数及其方法
公开(公告)号：US5994161A
公开(公告)日：1999-11-30
申请号：US927150
申请日：1997-09-03
申请人： Gordon D. Bitko , Andrew C. McNeil , David J. Monk
发明人： Gordon D. Bitko , Andrew C. McNeil , David J. Monk
IPC分类号： B81B7/00 , G01L9/00 , H01L21/00
CPC分类号： B81B7/0048 , B81B7/0012 , G01L19/0084 , G01L19/141 , G01L19/147 , H01L24/32 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01082 , H01L2924/12042 , H01L2924/351
摘要： A non-zero temperature coefficient of offset (Tco) in a semiconductor device (5) is adjusted by reducing the amount of adhesive material used to secure a first structure to a second structure. An adhesive layer (14) used to secure a sensor die (11) to a constraint die (12) in a pressure sensor application is reduced in thickness and/or formed so that adhesive material does not completely cover the constraint die (12). The Tco is further adjusted by reducing the amount and/or patterning the adhesive layer (18) used to secure the sensor (10) to its package (16).
摘要翻译：通过减少用于将第一结构固定到第二结构的粘合剂材料的量来调节半导体器件（5）中的非零偏移温度系数（Tco）。用于将传感器模具（11）固定到压力传感器应用中的约束模具（12）的粘合剂层（14）的厚度和/或形成为使得粘合剂材料不完全覆盖约束模具（12）。通过减少用于将传感器（10）固定到其包装（16）的粘合剂层（18）的数量和/或图案来进一步调整Tco。

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