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    • 12. 发明申请
    • METHOD OF AUTOMATICALLY CONFIGURING A SYSTEM USING DIFFERENCES IN THE EXTERNAL APPEARANCE OF THE COMPONENTS
    • METHOD FOR A技术系统在组件外部影响不同质量的光自动配置
    • WO1997038384A1
    • 1997-10-16
    • PCT/EP1997001694
    • 1997-04-04
    • DAIMLER-BENZ AKTIENGESELLSCHAFTJÜNGST, Ernst-WernerHEINRICH, Michael
    • DAIMLER-BENZ AKTIENGESELLSCHAFT
    • G06F17/60
    • G06Q10/087
    • The aim of the invention is to provide an automatic, resouce-oriented method of configuring modular systems which configures a system by comparing resources of the same type but of different quality for compatibility, which is easy to monitor, as well as being efficient, flexible and suitable for use in a wide range of applications and which enables information of the types of component listed in a catalogue to be easily updated when changes are made or the component range expanded. In the method proposed, the following information is explicitly defined and stored: the different qualitites which the resources defined in the catalogue listing the types of component have, how the resources having different qualities are compared to each other in order to decide which of the resources provided are compatible with resources of a particular quality requested
    • 本发明的目的是提供一种用于自动资源化的构造的模块化技术系统,其配置相同类型的资源进行比较时的相容性的方法,但具有不同的质量; 这是可管理的,但有效的,灵活的和可以通用使用; 并且这使得能够追踪可用的组件类型用于以最小的努力成分的范围的修改和扩展的目录中的信息。 在该方法中,以下信息被明确定义和存储:什么是不同的质量可用组件类型资源的目录定义<如何与不同质量的资源比较,以决定其提供的资源是有一定质量的需求资源兼容? 在类型,大小和相容性方面所需的资源与配置期间反复提供的资源进行比较。 本发明的方法确定如何自动为兼容性检查和其它部件被选择为未满足的资源平衡。
    • 18. 发明申请
    • PROCESS FOR PRODUCING INTEGRATED ACTIVE-MATRIX LIQUID CRYSTAL DISPLAYS
    • 用于生产综合有源矩阵液晶显示器
    • WO1994028460A1
    • 1994-12-08
    • PCT/EP1994001709
    • 1994-05-26
    • DAIMLER-BENZ AKTIENGESELLSCHAFTBODENSOHN, Alexander
    • DAIMLER-BENZ AKTIENGESELLSCHAFT
    • G02F01/136
    • G02F1/13454G02F2001/136281G02F2202/105Y10S438/977
    • The invention pertains to a process for producing integrated active-matrix liquid crystal displays with a chequered silicon dice subdivided into picture elements. Each picture element consists of a light-controlling element and an integrated, driving electronic switching element (20) which drives the translucent electrode (16) of the picture element. The array of picture elements is covered with glass layers (6, 12) with polarising and analysing layers on their outer faces. The invention is characterised in that the switching elements are integrated into a transparent silicon layer in which optic windows for the light-controlling elements may are integrated. This is done by etching out a cavity in the silicon dice in the region of the liquid crystal display, leaving a thin layer of silicon or no silicon at all in the region of the optic window. On the thicker frame (10) of the silicon dice there is a drive circuit.
    • 本发明涉及一种用于制造集成有源矩阵液晶显示器用的硅晶片,其是棋盘图案分为图像元素,各图像元素由一个光引导元件和一个驱动该以集成形式制造的电子开关元件(20),和透明电极 像素驱动(16),并且其中与所述玻璃层(6,12)被覆盖,这对他们外侧偏振片和Analysatorschichten图像元素的阵列。 它由在所述开关元件集成在硅层,其是透明的并且在用于集成的光导向元件,所述光学窗。 这是通过没有或只有一个薄的硅层保留蚀刻出在硅晶片中的凹部在液晶显示器的领域中,在光学窗口的字段来实现。 在硅晶片的厚框架(10)是所述驱动器电路。
    • 20. 发明申请
    • CONTROLLABLE SEMICONDUCTOR STRUCTURE WITH IMPROVED SWITCHING PROPERTIES
    • 具有改进的开关特性的可控半导体结构
    • WO1998019342A1
    • 1998-05-07
    • PCT/EP1997005080
    • 1997-09-17
    • DAIMLER-BENZ AKTIENGESELLSCHAFTKAMINSKI, NandoNEUBRAND, Horst
    • DAIMLER-BENZ AKTIENGESELLSCHAFT
    • H01L29/24
    • H01L29/1608H01L29/7392H01L29/808H01L29/8083H01L29/812H01L29/8122H01L29/8124
    • The invention concerns a controllable semiconductor structure comprising a base region (101, 201, 301, 401), a source region (106, 212, 312, 412) and a drain region (107, 213, 313, 413) a conductive duct being provided in the base region between the source and drain. According to the invention, the duct can be constricted by regions lying parallel thereto, an active control region (102, 202, 302, 402) and an opposite passive control region (103, 203, 303, 403) which each form a blockable passage with the base region (101, 201, 301, 401). Further provided is a conductive connection (108, 209, 309, 409) between the passive control region (103, 203, 303, 403) and the source region (106, 212, 312, 412), the semiconductor material of the base region (101, 201, 301, 401) having an energy gap of more than 1.2 eV.
    • 以可控制的半导体结构,其具有基极区(101,201,301,401),源极区(106,212,312,412)和漏极区域(107,213,313,413),其中,在所述源极之间的基极区域 和漏极,导电信道可用,可以设想,该并行区域的信道,有源控制区(102,202,302,402)和相对的,被动控制区(103,203,303,403),每个 与所述基极区(101,201,301,401)的形式,阻挡启用结abschnürbar。 它进一步提供被动控制区(103,203,303,403)和源极区(106,212,312,412)之间的导电连接(108,209,309,409),并且在所述半导体材料 具有带隙大于1.2电子伏特更大基极区(101,201,301,401)的。