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11. 发明申请

US20120032076A1 METHOD FOR INSPECTING EUV RETICLE AND APPARATUS THEREOF 有权
标题翻译：检查EUV的方法及其设备
公开(公告)号：US20120032076A1
公开(公告)日：2012-02-09
申请号：US12850899
申请日：2010-08-05
申请人： CHIYAN KUAN , WEI FANG , YOU-JIN WANG
发明人： CHIYAN KUAN , WEI FANG , YOU-JIN WANG
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G01N23/2251
摘要： A method of inspecting an EUV reticle is proposed, which uses an electron beam (EB) with low density and high energy to scan the surface of an EUV reticle for inspecting the EUV reticle. A step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle. The step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The present invention uses a scanning electron microscope (SEM) to provide a primary electron beam for conditioning the surface charge and a focused primary electron beam for scanning the surface.
摘要翻译：提出了一种检测EUV掩模版的方法，其使用低密度和高能量的电子束（EB）来扫描EUV掩模版的表面以检查EUV掩模版。调节表面电荷的步骤之后是检查EUV掩模版的表面的步骤。调理表面的步骤可以中和表面电荷，检查步骤可以获得EUV掩模版的图像。本发明使用扫描电子显微镜（SEM）提供用于调节表面电荷的一次电子束和用于扫描表面的聚焦的一次电子束。

12. 发明申请

US20120228494A1 METHOD FOR INSPECTING EUV RETICLE AND APPARATUS THEREOF 有权
标题翻译：检查EUV的方法及其设备
公开(公告)号：US20120228494A1
公开(公告)日：2012-09-13
申请号：US13479702
申请日：2012-05-24
申请人： CHIYAN KUAN , WEI FANG , YOU-JIN WANG
发明人： CHIYAN KUAN , WEI FANG , YOU-JIN WANG
IPC分类号： G01N23/225
CPC分类号： G01N23/2251 , G03F1/22 , G03F1/86 , H01J37/28 , H01J2237/2817
摘要： A method of inspecting an EUV reticle is proposed, which uses an original design layout information to align the plurality of patterns on an image, which is got by scanning the surface of an EUV reticle, such that the defect can be identified and classified according to the aligned patterns. In the scanning process, a step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle wherein the step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The method of inspecting an EUV reticle also tuning a retarding electrode to attract more secondary electrons such that the greylevels of different patterns may be shown and the defect can be identified and classified.
摘要翻译：提出了一种检查EUV掩模版的方法，其使用原始设计布局信息来对准通过扫描EUV掩模版的表面而获得的图像上的多个图案，使得可以根据对齐的图案。在扫描过程中，调节表面电荷的步骤之后是检查EUV掩模版的表面的步骤，其中调理表面的步骤可以中和表面电荷，并且检查步骤可以获得EUV掩模版的图像。检查EUV掩模版的方法还调谐延迟电极以吸引更多的二次电子，使得可以示出不同图案的灰度并且可以识别和分类缺陷。

13. 发明授权

US08217349B2 Method for inspecting EUV reticle and apparatus thereof 有权
标题翻译： EUV掩模版检查方法及其装置
公开(公告)号：US08217349B2
公开(公告)日：2012-07-10
申请号：US12850899
申请日：2010-08-05
申请人： Chiyan Kuan , Wei Fang , You-Jin Wang
发明人： Chiyan Kuan , Wei Fang , You-Jin Wang
IPC分类号： H01J37/28 , G01N23/00 , G21K5/00
CPC分类号： G01N23/2251
摘要： A method of inspecting an EUV reticle is proposed, which uses an electron beam (EB) with low density and high energy to scan the surface of an EUV reticle for inspecting the EUV reticle. A step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle. The step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The present invention uses a scanning electron microscope (SEM) to provide a primary electron beam for conditioning the surface charge and a focused primary electron beam for scanning the surface.
摘要翻译：提出了一种检测EUV掩模版的方法，其使用低密度和高能量的电子束（EB）来扫描EUV掩模版的表面以检查EUV掩模版。调节表面电荷的步骤之后是检查EUV掩模版的表面的步骤。调理表面的步骤可以中和表面电荷，检查步骤可以获得EUV掩模版的图像。本发明使用扫描电子显微镜（SEM）提供用于调节表面电荷的一次电子束和用于扫描表面的聚焦的一次电子束。

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