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11. 发明授权

US07615747B1 Sampling feedback system 有权
标题翻译：抽样反馈系统
公开(公告)号：US07615747B1
公开(公告)日：2009-11-10
申请号：US11865688
申请日：2007-10-01
申请人： Alan D. Brodie
发明人： Alan D. Brodie
IPC分类号： H01J37/29
CPC分类号： H01J37/28 , H01J37/22 , H01J37/244 , H01J2237/221 , H01J2237/24592 , H01J2237/2817
摘要： An electron microscope includes an electron beam source, which produces an electron beam. Scan deflectors direct the electron beam in a pattern across a sample, which thereby emits electrons. The pattern includes line portions and retrace portions. A main detector receives the electrons emitted by the sample, and produces a main signal. Blankers redirect the electron beam into a reference detector during at least a portion of the retrace portions of the pattern. The reference detector receives the electron beam and produces a reference signal. A mixing circuit receives the main signal and the reference signal and adjusts the main signal based at least in part on the reference signal, thereby producing an adjusted signal. An image computer receives the adjusted signal and produces an image of the sample based at least in part on the line portions of the adjusted signal.
摘要翻译：电子显微镜包括产生电子束的电子束源。扫描偏转器将电子束以图案的形式引导到样品上，从而发射电子。该图案包括线部分和回扫部分。主检测器接收由样品发射的电子，并产生主信号。在图案的回扫部分的至少一部分期间，消光器将电子束重定向到参考检测器中。参考检测器接收电子束并产生参考信号。混合电路至少部分地基于参考信号接收主信号和参考信号并调整主信号，从而产生调整信号。图像计算机至少部分地基于经调整的信号的线路部分接收经调整的信号并产生样本的图像。

12. 发明授权

US06977375B2 Multi-beam multi-column electron beam inspection system 失效
标题翻译：多光束多列电子束检测系统
公开(公告)号：US06977375B2
公开(公告)日：2005-12-20
申请号：US09789180
申请日：2001-02-19
申请人： Edward M. Yin , Alan D. Brodie , N. William Parker , Frank Ching-Feng Tsai
发明人： Edward M. Yin , Alan D. Brodie , N. William Parker , Frank Ching-Feng Tsai
IPC分类号： G01Q20/02 , G01Q30/02 , G21K1/087 , G21K5/10 , H01J37/28 , G01N23/00 , G21K7/00
CPC分类号： G21K1/087 , G21K5/10 , H01J37/28 , H01J2237/2817
摘要： A multi-column electron beam inspection system is disclosed herein. The system is designed for electron beam inspection of semiconductor wafers with throughput high enough for in-line use. The system includes field emission electron sources, electrostatic electron optical columns, a wafer stage with six degrees of freedom of movement, and image storage and processing systems capable of handling multiple simultaneous image data streams. Each electron optical column is enhanced with an electron gun with redundant field emission sources, a voltage contrast plate to allow voltage contrast imaging of wafers, and an electron optical design for high efficiency secondary electron collection.
摘要翻译：本文公开了一种多列电子束检查系统。该系统设计用于半导体晶圆的电子束检查，其生产量足够高以便在线使用。该系统包括场发射电子源，静电电子光柱，具有六个自由度的晶片台，以及能够处理多个同时图像数据流的图像存储和处理系统。每个电子光学柱由具有冗余场致发射源的电子枪，用于允许晶片电压对比成像的电压对照板和用于高效二次电子收集的电子光学设计而增强。

13. 发明授权

US06316164B1 Proximity effect correction method through uniform removal of fraction of interior pixels 有权
$Proximity effect correction method through uniform removal of fraction of interior pixels$
标题翻译：通过均匀去除内部像素分数的近似效应校正方法
公开(公告)号：US06316164B1
公开(公告)日：2001-11-13
申请号：US09527062
申请日：2000-03-16
申请人： N. William Parker , Daniel L. Cavan , Alan D. Brodie , John H. McCoy
发明人： N. William Parker , Daniel L. Cavan , Alan D. Brodie , John H. McCoy
IPC分类号： G03C500
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31769 , Y10S430/143
摘要： A proximity effect correction method for electron beam lithography suitable for use in a raster scan system. The exposure pattern consists of shapes; these shapes are subdivided into edge pixels and interior pixels; the pattern is then modified by uniformly removing a fraction of the interior pixels. The method reduces the backscattered electron background dose, improving the contrast for shapes with fine features, particularly when they are in close proximity to large or densely packed shapes.
摘要翻译：适用于光栅扫描系统的电子束光刻的邻近效应校正方法。曝光图案由形状组成; 这些形状被细分为边缘像素和内部像素; 然后通过均匀地去除一部分内部像素来修改图案。该方法减少背散射电子背景剂量，改善具有精细特征的形状的对比度，特别是当它们紧邻大的或密集填充的形状时。

14. 发明授权

US5665968A Inspecting optical masks with electron beam microscopy 失效
标题翻译：用电子束显微镜检查光学掩模
公开(公告)号：US5665968A
公开(公告)日：1997-09-09
申请号：US607191
申请日：1996-02-26
申请人： Dan Meisburger , Alan D. Brodie , Zhong-Wei Chen , Jack Y. Jau , Brian J. Grenon
发明人： Dan Meisburger , Alan D. Brodie , Zhong-Wei Chen , Jack Y. Jau , Brian J. Grenon
IPC分类号： H01J37/28 , H01J37/30 , H01J37/26
CPC分类号： H01J37/28 , H01J37/3005 , H01J2237/2817
摘要： There is disclosed an apparatus to scan an electron beam across an optical phase shift mask and automatically inspect the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x-y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.
摘要翻译：公开了一种通过光学相移掩模扫描电子束并自动检查掩模以确定相移掩模的特征和缺陷分类的装置。电子束指向掩模的表面以扫描该掩模，并且提供检测器以从掩模的表面测量次级和背散射带电粒子。掩模安装在x-y平台上，以在掩模被电子束扫描时提供至少一个自由度。通过分析从相移掩模获得的每个次要和反向散射电子波形中的各种波形特征，可以检测掩模的各种物理特征以及它们的尺寸和位置。也可以确定铬层的厚度。在检查配置中，还存在用于比较衬底上的图案与用于错误检测的第二图案的比较技术。

15. 发明授权

US07335894B2 High current density particle beam system 有权
标题翻译：高电流密度粒子束系统
公开(公告)号：US07335894B2
公开(公告)日：2008-02-26
申请号：US11274608
申请日：2005-11-15
申请人： Juergen Frosien , Stefan Lanio , Gerald Schoenecker , Alan D. Brodie , David A. Crewe
发明人： Juergen Frosien , Stefan Lanio , Gerald Schoenecker , Alan D. Brodie , David A. Crewe
IPC分类号： H01J37/244
CPC分类号： H01J37/05 , H01J37/244 , H01J37/28 , H01J2237/24485
摘要： The present invention relates to a charged particle unit for deflecting and energy-selecting charged particles of a charged particle beam. Thereby, a double-focusing sector unit for deflecting and focusing the charged particle beam and an energy-filter forming a potential is provided, whereby charged particles of the charged particles beam are redirected at the potential-saddle depending on the energy of the charged articles.
摘要翻译：本发明涉及带电粒子单元，用于对带电粒子束的带电粒子进行偏转和能量选择。由此，提供用于使带电粒子束偏转和聚焦并形成电位的能量滤波器的双重聚焦扇区单元，由此带电粒子束的带电粒子根据带电物品的能量在电位鞍上被重定向。

16. 发明授权

US06844550B1 Multi-beam multi-column electron beam inspection system 失效
公开(公告)号：US06844550B1
公开(公告)日：2005-01-18
申请号：US10630619
申请日：2003-07-29
申请人： Edward M. Yin , Alan D. Brodie , N. William Parker , Frank Ching-Feng Tsai
发明人： Edward M. Yin , Alan D. Brodie , N. William Parker , Frank Ching-Feng Tsai
IPC分类号： G01Q20/02 , G01Q30/02 , G21K1/087 , G21K5/10 , H01J37/28 , G01N23/00 , G21K7/00
CPC分类号： G21K1/087 , G21K5/10 , H01J37/28 , H01J2237/2817
摘要： A multi-column electron beam inspection system is disclosed herein. The system is designed for electron beam inspection of semiconductor wafers with throughput high enough for in-line use. The system includes field emission electron sources, electrostatic electron optical columns, a wafer stage with six degrees of freedom of movement, and image storage and processing systems capable of handling multiple simultaneous image data streams. Each electron optical column is enhanced with an electron gun with redundant field emission sources, a voltage contrast plate to allow voltage contrast imaging of wafers, and an electron optical design for high efficiency secondary electron collection.

17. 发明授权

US5578821A Electron beam inspection system and method 失效
标题翻译：电子束检查系统及方法
公开(公告)号：US5578821A
公开(公告)日：1996-11-26
申请号：US371458
申请日：1995-01-11
申请人： Dan Meisberger , Alan D. Brodie , Anil A. Desai , Dennis G. Emge , Zhong-Wei Chen , Richard Simmons , Dave E. A. Smith , April Dutta , J. Kirkwood H. Rough , Leslie A. Honfi , Henry Pearce-Percy , John McMurtry , Eric Munro
发明人： Dan Meisberger , Alan D. Brodie , Anil A. Desai , Dennis G. Emge , Zhong-Wei Chen , Richard Simmons , Dave E. A. Smith , April Dutta , J. Kirkwood H. Rough , Leslie A. Honfi , Henry Pearce-Percy , John McMurtry , Eric Munro
IPC分类号： G01B15/00 , G01B15/08 , G01N23/04 , G01N23/203 , G01N23/225 , G01R31/28 , G01R31/302 , G03F1/08 , G03F1/16 , H01J37/28 , H01J37/30 , H01L21/027 , H01L21/66 , H01J37/00
CPC分类号： H01J37/28 , H01J37/3005 , H01J2237/2817
摘要： A method and apparatus for a charged particle scanning system and an automatic inspection system, including wafers and masks used in microcircuit fabrication. A charged particle beam is directed at the surface of a substrate for scanning that substrate and a selection of detectors are included to detect at least one of the secondary charged particles, back-scattered charged particles and transmitted charged particles from the substrate. The substrate is mounted on an x-y stage to provide at least one degree of freedom while the substrate is being scanned by the charged particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary charged particles. The system facilitates inspection at low beam energies on charge sensitive insulating substrates and has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment system for initially aligning the substrate beneath the charged particle beam. To function most efficiently there is also a vacuum system for evacuating and repressurizing a chamber containing the substrate. The vacuum system can be used to hold one substrate at vacuum while a second one is being loaded/unloaded, evacuated or repressurized. Alternately, the vacuum system can simultaneously evacuate a plurality of substrates prior to inspection and repressurize the same plurality of substrates following inspection. In the inspection configuration, there is also a comparison system for comparing the pattern on the substrate with a second pattern.
摘要翻译：一种带电粒子扫描系统和自动检查系统的方法和装置，包括微电路制造中使用的晶片和掩模。带电粒子束被引导到用于扫描该衬底的衬底的表面，并且包括选择的检测器以检测来自衬底的次级带电粒子，反向散射带电粒子和透射带电粒子中的至少一个。衬底被安装在x-y平台上以在通过带电粒子束扫描衬底的同时提供至少一个自由度。衬底也在其表面上经受电场以加速次级带电粒子。该系统便于对电荷敏感绝缘基板上的近光束能量进行检查，并且能够准确地测量基板相对于带电粒子束的位置。另外，存在用于使带电粒子束下面的衬底最初对准的光学对准系统。为了最有效地起作用，还有一个真空系统用于对含有基底的腔室进行抽空和再加压。真空系统可用于将一个基板保持在真空状态，而第二个基板正在装载/卸载，抽真空或重新加压。或者，真空系统可以在检查之前同时抽空多个基板，并且在检查之后重新加压相同的多个基板。在检查配置中，还存在用于将衬底上的图案与第二图案进行比较的比较系统。

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