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161. 发明申请

WO2005038994A2 LASER-BASED SYSTEM FOR MEMORY LINK PROCESSING WITH PICOSECOND LASERS 审中-公开
标题翻译：基于激光的系统，用于使用PICOSECOND激光进行存储器链接处理
公开(公告)号：WO2005038994A2
公开(公告)日：2005-04-28
申请号：PCT/US2004/032661
申请日：2004-10-05
申请人： GSI LUMONICS CORPORATION , GU, Bo , SMART, Donald, V. , CORDINGLEY, James, J. , LEE, Joohan , SVETKOFF, Donald, J. , JOHNSON, Shepard, D. , EHRMANN, Jonathan, S.
发明人： GU, Bo , SMART, Donald, V. , CORDINGLEY, James, J. , LEE, Joohan , SVETKOFF, Donald, J. , JOHNSON, Shepard, D. , EHRMANN, Jonathan, S.
IPC分类号： H01S
CPC分类号： H01S3/2383 , B23K26/04 , B23K26/0624 , B23K26/0626 , B23K26/0736 , B23K26/361 , B23K26/389 , B23K26/40 , B23K2201/38 , B23K2201/40 , B23K2203/10 , B23K2203/12 , B23K2203/172 , H01L21/485 , H01L21/76894 , H01L22/12 , H01L23/5258 , H01L2924/0002 , H01S3/0085 , H01S3/06758 , H01S3/1618 , H01S3/23 , H05K3/0026 , H01L2924/00
摘要： A laser-based system for processing target material within a microscopic region without causing undesirable changes in electrical or physical characteristics of at least one material surrounding the target material, the system includes a seed laser, an optical amplifier, and a beam delivery system. The seed laser for generating a sequence of laser pulses having a first pre-determined wavelength. The optical amplifier for amplifying at least a portion of the sequence of pulses to obtain an amplified sequence of output pulses. The beam delivery system for delivering and focusing at least one pulse of the amplified sequence of pulses onto the target material. The at least one output pulse having a pulse duration in the range of about (10) picoseconds to less than (1) nanosecond. The pulse duration being within a thermal processing range. The at least one focused output pulse having sufficient power density at a location within the target material to reduce the reflectivity of the target material and efficiently couple the focused output into the target material to remove the target material.
摘要翻译：一种用于在微观区域内处理目标材料而不引起围绕靶材料的至少一种材料的电学或物理特性的不希望的变化的基于激光的系统，该系统包括种子激光器，光学放大器和光束传递系统。用于产生具有第一预定波长的激光脉冲序列的种子激光器。用于放大脉冲序列的至少一部分以获得放大的输出脉冲序列的光放大器。用于将放大的脉冲序列的至少一个脉冲传送和聚焦到目标材料上的光束传送系统。所述至少一个输出脉冲具有在约（10）皮秒至小于（1）纳秒范围内的脉冲持续时间。脉冲持续时间在热处理范围内。所述至少一个聚焦输出脉冲在目标材料内的位置处具有足够的功率密度，以减少目标材料的反射率并有效地将聚焦的输出耦合到目标材料中以去除目标材料。

162. 发明申请

WO2004017409A1 METHOD FOR MODIFYING THE IMPEDANCE OF SEMICONDUCTOR DEVICES USING A FOCUSED HEATING SOURCE 审中-公开
标题翻译：使用聚焦加热源修改半导体器件阻抗的方法
公开(公告)号：WO2004017409A1
公开(公告)日：2004-02-26
申请号：PCT/CA2003/001199
申请日：2003-08-08
申请人： TECHNOLOGIES LTRIM INC.
发明人： LACOURSE, Alain , LANGLOIS, Hugues , SAVARIA, Yvon , GAGNON, Yves
IPC分类号： H01L27/08
CPC分类号： H01L28/20 , H01C17/26 , H01L21/268 , H01L21/324 , H01L21/76894 , H01L27/0802 , H01L29/66166
摘要： A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing the dopant concentration) by diffusion of dopants from adjacent regions of higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of lasers in relation to circuits for the creation of conductive links and pathways where none existed before. The present invention more particularly relates to a means wherein impedance modification (i.e. trimming or tuning) may advantageously be carried out as a function of the location of one or more conductive bridge(s) along the length of a gap region.
摘要翻译：提供了一种用于使用聚焦加热源来调谐（即修改，改变）半导体部件或器件的阻抗的方法。该方法可用于微调半导体组件或器件的阻抗，通过通过掺杂剂从较高掺杂剂浓度的相邻区域扩散通过熔融作用来改变掺杂剂浓度低的区域的掺杂剂分布（即增加掺杂剂浓度）的聚焦加热源，例如激光。本发明特别涉及激光器相对于用于创建之前不存在的导电链路和路径的电路的使用。本发明更具体地涉及一种其中阻抗修改（即修整或调谐）可以有利地作为沿着间隙区域的长度的一个或多个导电桥的位置的函数来执行的装置。

163. 发明申请

WO2003028087A2 MANUFACTURING PROCESS OF INTEGRATED CIRCUITS IN FLIP-CHIP TECHNOLOGY 审中-公开
标题翻译： FLIP-CHIP技术中集成电路的制造工艺
公开(公告)号：WO2003028087A2
公开(公告)日：2003-04-03
申请号：PCT/IT2002/000389
申请日：2002-06-13
申请人： SILENA INTERNATIONAL S.P.A. , LO VERDE, Domenico , SANCES, Giuseppe
发明人： LO VERDE, Domenico , SANCES, Giuseppe
IPC分类号： H01L21/60
CPC分类号： H01L21/76894 , H01L21/2885 , H01L21/76892 , H01L24/11 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05569 , H01L2224/05572 , H01L2224/1147 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/00
摘要： A process for manufacturing integrated circuits in flip-chip technology having contact elements (31) realised on predetermined contact areas (23), comprises the steps of readying electrical connections (30) in such a way as mutually to connect all the contact areas (23) of said integrated circuit (21), galvanically depositing a contact element (31) in correspondence with each of said contact areas (23) and interrupting said electrical connections (30) between the contact areas (23).
摘要翻译：一种用于制造具有在预定接触区域（23）上实现的接触元件（31）的倒装芯片技术的集成电路的方法，包括以相互连接所有接触区域（23）的方式准备电连接（30）的步骤）与所述接触区域（23）中的每一个电流沉积接触元件（31）并且中断所述接触区域（23）之间的所述电连接（30）。

164. 发明申请

WO0198016A3 LASER SYSTEM FOR PROCESSING TARGET MATERIAL 审中-公开
标题翻译：用于加工目标材料的激光系统
公开(公告)号：WO0198016A3
公开(公告)日：2002-06-27
申请号：PCT/US0117543
申请日：2001-05-31
申请人： GEN SCANNING INC , SMART DONALD V , SVETKOFF DONALD J
发明人： SMART DONALD V , SVETKOFF DONALD J
IPC分类号： B23K26/00 , B23K26/06 , B23K26/073 , B23K26/40 , B23K101/36 , B81C1/00 , H01L21/302 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/525 , H01S3/00 , H01S3/06 , H01S3/067 , H01S3/23 , H01S3/30 , H01L21/70
CPC分类号： H01S3/2308 , B23K26/0624 , B23K26/0736 , B23K26/40 , B23K2203/50 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01S3/06754 , H01S3/2375 , H01S3/302 , H01S2301/08 , H01L2924/00
摘要： An energy-efficient method and system for processing target material such as microstructures in a microscopic region without causing undesirable changes in electrical and/or physical characteristics of material surrounding the target material is provided. The system includes a controller for generating a processing control signal and a signal generator for generating a modulated drive waveform based on the processing control signal. The waveform has a sub-nanosecond rise time. The system also includes a gain-switched, pulsed semiconductor seed laser having a first wavelength for generating a laser pulse train at a repetition rate. The drive waveform pumps the laser so that each pulse of the pulse train has a predetermined shape. Further, the system includes a fiber amplifier subsystem for optically amplifying the pulse train to obtain an amplified pulse train without significantly changing the predetermined shape of the pulses. The amplified pulses have little distortion and have substantially the same relative temporal power distribution as the original pulse train from the laser. Each of the amplified pulses has a substantially square temporal power density distribution, a sharp rise time, a pulse duration and a fall time. The subsystem also includes a wavelength shifter in the form of an optical fiber for controllably shifting the first wavelength to a second, larger wavelength to obtain an amplified, wavelength-shifted, pulse train.
摘要翻译：提供了一种用于在微观区域中处理诸如微结构的目标材料而不引起围绕目标材料的材料的电气和/或物理特性的不期望的变化的能量效率方法和系统。该系统包括用于产生处理控制信号的控制器和用于基于处理控制信号产生调制的驱动波形的信号发生器。波形具有亚纳秒上升时间。该系统还包括具有用于以重复率产生激光脉冲串的第一波长的增益切换的脉冲半导体种子激光器。驱动波形泵浦激光器，使得脉冲串的每个脉冲具有预定的形状。此外，该系统包括光纤放大器子系统，用于光学放大脉冲串以获得放大的脉冲串，而不显着改变预定形状的脉冲。放大的脉冲具有很小的失真，并且具有与来自激光器的原始脉冲串相当的相对时间功率分布。每个放大的脉冲具有基本上正方形的时间功率密度分布，急剧上升时间，脉冲持续时间和下降时间。子系统还包括光纤形式的波长移位器，用于将第一波长可控地移位到第二较大波长以获得放大的波长偏移脉冲序列。

165. 发明申请

WO02042847A1 PROCESS AND MASK PROJECTION SYSTEM FOR LASER CRYSTALLIZATION PROCESSING OF SEMICONDUCTOR FILM REGIONS ON A SUBSTRATE 审中-公开
标题翻译：用于基板上半导体膜片区激光结晶处理的工艺和掩模投影系统
公开(公告)号：WO02042847A1
公开(公告)日：2002-05-30
申请号：PCT/US2001/044415
申请日：2001-11-27
IPC分类号： B23K26/06 , B23K26/067 , G03B27/42 , H01L21/20 , H01L21/268 , H01L21/768 , H01S3/00 , G03F7/20
CPC分类号： H01L21/02686 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/066 , B23K26/067 , G03B27/42 , H01L21/02532 , H01L21/02678 , H01L21/2026 , H01L21/76894
摘要： A process and system for processing a silicon thin film on a sample are provided. In particular, an irradiation beam generator is controlled to emit irradiation beam pulses at a predetermined repetition rate. These irradiation beam pulses are then separated into a first set of beam pulses and a second set of beam pulses. The first set of beam pulses are caused to irradiate through a mask to produce a plurality of beamlets. The second set of beam pulses and the beamlets are caused to impinge and irradiate at least one section of the silicon thin film. When the second set of beam pulses and the beamlets simultaneously irradiate the section of the silicon thin film, this combination of the beamlets and second set of beam pulses provides a combined intensity which is sufficient to melt the section of the silicon thin film throughout an entire thickness of the section.
摘要翻译：提供了用于处理样品上的硅薄膜的工艺和系统。特别地，照射光束发生器被控制为以预定重复频率发射照射束脉冲。然后将这些照射光束脉冲分成第一组光束脉冲和第二组光束脉冲。使第一组光束脉冲通过掩模照射以产生多个子束。使第二组光束脉冲和子束被撞击并照射硅薄膜的至少一个部分。当第二组光束脉冲和子束同时照射硅薄膜的部分时，子束和第二组光束脉冲的这种组合提供了足够的融合强度，以使整个整个硅薄膜的部分熔化截面厚度。

166. 发明申请

WO01098016A2 ENERGY-EFFICIENT METHOD AND SYSTEM FOR PROCESSING TARGET MATERIAL USING AN AMPLIFIED, WAVELENGTH-SHIFTED PULSE TRAIN 审中-公开
标题翻译：使用放大的波长变化脉冲串训练来处理目标材料的能量效率方法和系统
公开(公告)号：WO01098016A2
公开(公告)日：2001-12-27
申请号：PCT/US2001/017543
申请日：2001-05-31
IPC分类号： B23K26/00 , B23K26/06 , B23K26/073 , B23K26/40 , B23K101/36 , B81C1/00 , H01L21/302 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/525 , H01S3/00 , H01S3/06 , H01S3/067 , H01S3/23 , H01S3/30
CPC分类号： H01S3/2308 , B23K26/0624 , B23K26/0736 , B23K26/40 , B23K2203/50 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01S3/06754 , H01S3/2375 , H01S3/302 , H01S2301/08 , H01L2924/00
摘要： An energy-efficient method and system for processing target material such as microstructures in a microscopic region without causing undesirable changes in electrical and/or physical characteristics of material surrounding the target material is provided. The system includes a controller for generating a processing control signal and a signal generator for generating a modulated drive waveform based on the processing control signal. The waveform has a sub-nanosecond rise time. The system also includes a gain-switched, pulsed semiconductor seed laser having a first wavelength for generating a laser pulse train at a repetition rate. The drive waveform pumps the laser so that each pulse of the pulse train has a predetermined shape. Further, the system includes a fiber amplifier subsystem for optically amplifying the pulse train to obtain an amplified pulse train without significantly changing the predetermined shape of the pulses. The amplified pulses have little distortion and have substantially the same relative temporal power distribution as the original pulse train from the laser. Each of the amplified pulses has a substantially square temporal power density distribution, a sharp rise time, a pulse duration and a fall time. The subsystem also includes a wavelength shifter in the form of an optical fiber for controllably shifting the first wavelength to a second, larger wavelength to obtain an amplified, wavelength-shifted, pulse train. The system further includes a beam delivery and focusing subsystem for delivering and focusing at least a portion of the amplified, wavelength-shifted, pulse train onto the target material The rise time (less than about 1 ns) is fast enough to efficiently couple laser energy to the target material, the pulse duration (typically 2-10 ns) is sufficient to process the target material, the fall time (a few ns) is rapid enough to prevent the undesirable changes to the material, such as silicon, surrounding the target material and the second wavelength more efficiently couples laser energy to the target material than the first wavelength. The subsystem may also include a filter coupled to the optical fiber to narrow bandwidth of the amplified, wavelength-shifted, pulse train. The second wavelength may be at the absorption edge of silicon.
摘要翻译：提供了一种用于在微观区域中处理诸如微结构的目标材料而不引起围绕目标材料的材料的电气和/或物理特性的不期望的变化的能量效率方法和系统。该系统包括用于产生处理控制信号的控制器和用于基于处理控制信号产生调制的驱动波形的信号发生器。波形具有亚纳秒上升时间。该系统还包括具有用于以重复率产生激光脉冲串的第一波长的增益切换的脉冲半导体种子激光器。驱动波形泵浦激光器，使得脉冲串的每个脉冲具有预定的形状。此外，该系统包括光纤放大器子系统，用于光学放大脉冲串以获得放大的脉冲串，而不显着改变预定形状的脉冲。放大的脉冲具有很小的失真，并且具有与来自激光器的原始脉冲串相当的相对时间功率分布。每个放大的脉冲具有基本上正方形的时间功率密度分布，急剧上升时间，脉冲持续时间和下降时间。子系统还包括光纤形式的波长移位器，用于将第一波长可控地移位到第二较大波长以获得放大的波长偏移脉冲序列。该系统还包括用于将放大的波长偏移的脉冲序列的至少一部分传送和聚焦到目标材料上的束传递和聚焦子系统。上升时间（小于约1ns）足够快以有效地耦合激光能量到目标材料，脉冲持续时间（通常为2-10ns）足以处理目标材料，下降时间（几ns）足够快以防止围绕目标的材料（例如硅）的不期望的改变材料和第二波长比第一波长更有效地将激光能量耦合到目标材料。子系统还可以包括耦合到光纤的滤波器，以窄带放大的，波长偏移的脉冲串的带宽。第二波长可以在硅的吸收边缘。

167. 发明申请

WO0147659A8 ENERGY-EFFICIENT, LASER-BASED METHOD AND SYSTEM FOR PROCESSING TARGET MATERIAL 审中-公开
标题翻译：能源效率，基于激光的方法和处理目标材料的系统
公开(公告)号：WO0147659A8
公开(公告)日：2001-08-09
申请号：PCT/US0034470
申请日：2000-12-19
申请人： GSI LUMONICS INC , SMART DONALD V
发明人： SMART DONALD V
IPC分类号： B23K26/00 , B23K26/06 , B23K26/073 , B23K26/40 , B23K101/36 , H01L21/302 , H01L21/768 , H01L23/525 , H01S3/00
CPC分类号： B23K26/0736 , B23K26/0622 , B23K26/0624 , B23K26/361 , B23K26/40 , B23K2203/50 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , Y10S438/94 , Y10T29/49156 , H01L2924/00
摘要： An method and system for processing target material such as microstructures in a microscopic region without causing undesirable changes in electrical and/or physical characteristics of material surrounding the target material is provided. The system includes a controller for generating a processing control signal and a signal generator for generating a modulated drive waveform based on the processing control signal. The system also includes a gain-switched, pulsed semiconductor seed laser for generating a laser pulse trains at a repetition rate. The drive waveform pumps the laser so that each pluse of the pulse train has a predetermined shape. Further, the system includes a laser amplifier for optically amplifying the pulse train to obtain an amplified pulse train without significantly changing the predetermined shape of the pulse. Each of the amplified pulses has a substantially square temporal power density distribution, a sharp rise time, a pulse duration and a fall time. The system further includes a beam delivery and focusing subsystem for delivering and focusing at least a portion of the amplified pulse train onto the target material.
摘要翻译：提供了用于在微观区域中处理诸如微结构的目标材料而不引起围绕靶材料的材料的电气和/或物理特性的不期望的变化的方法和系统。该系统包括用于产生处理控制信号的控制器和用于基于处理控制信号产生调制的驱动波形的信号发生器。该系统还包括用于以重复率产生激光脉冲串的增益切换的脉冲半导体种子激光器。驱动波形泵浦激光器，使得脉冲串的每个脉冲具有预定的形状。此外，该系统包括用于光学放大脉冲串以获得放大脉冲串而不显着改变脉冲的预定形状的激光放大器。每个放大的脉冲具有基本上正方形的时间功率密度分布，急剧上升时间，脉冲持续时间和下降时间。该系统还包括用于将放大的脉冲序列的至少一部分传送和聚焦到目标材料上的束传递和聚焦子系统。

168. 发明申请

WO01054853A2 METHOD AND APPARATUS FOR REPAIR OF DEFECTS IN MATERIALS WITH SHORT LASER PULSES 审中-公开
标题翻译：使用短激光脉冲修复材料中的缺陷部分的方法和设备
公开(公告)号：WO01054853A2
公开(公告)日：2001-08-02
申请号：PCT/CA2001/000072
申请日：2001-01-25
IPC分类号： B23K26/03 , B23K26/06 , G03F1/00 , H01L21/768 , B23K26/00
CPC分类号： H01L21/76894 , B23K26/032 , B23K26/0624 , B23K2203/10 , G03F1/72
摘要： A method of accurately and precisely providing desired functionality to an electronic or opto-electronic component is disclosed in which a Femtosecond laser pulse is used to ablate material from a surface of or from within a component. The component is in active operation during the ablation process in order to facilitate the ablation process. The process also involves detection and feedback to indicate when a repair is sufficiently complete. The detection is also performed while the component is powered allowing in-situ detection and ablation. Of course, forms of facilitation other than feedback such as monitoring are also applicable to the invention.
摘要翻译：本发明涉及一种用于向电子或光电子部件准确且准确地给出所需功能的方法。在所述方法中，使用飞秒激光脉冲来从部件的表面或内部烧蚀材料。该组件在消融过程期间处于主动操作中，以促进所述消融过程。该方法还允许检测和反馈来指示修理何时足够完成。检测也在组件运行时进行，允许原位检测和消融。除反馈之外的简化形式，例如监测，当然也可以应用于本发明。

169. 发明申请

WO99066551A1 SCALEABLE INTEGRATED DATA PROCESSING DEVICE 审中-公开
标题翻译：可扩展的集成数据处理设备
公开(公告)号：WO99066551A1
公开(公告)日：1999-12-23
申请号：PCT/NO1999/000180
申请日：1999-06-02
IPC分类号： G06F1/16 , G11C17/00 , H01L21/768 , H01L21/822 , H01L21/98 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/00 , H01L27/10 , H01L51/40 , H01L51/20
CPC分类号： H01L21/02686 , G11C5/02 , G11C17/06 , H01L21/02532 , H01L21/02689 , H01L21/2026 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L27/0688 , H01L27/1021 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L27/11 , H01L27/11502 , H01L51/0001 , H01L51/0024 , H01L2924/0002 , H01L2924/00
摘要： A scaleable integrated data processing device, particularly a microcomputer, comprises a processing unit with one or more processors and a storage unit with one or more memories. The data processing device is provided on a carrier substrate (S) and comprises mutually adjacent substantially parallel layers (P, M, MP) stacked up on each other, the processing unit and the storage unit being provided in one or more such layers and the separate layers formed with a selected number of processors and memories in selected combinations. In each layer are provided horizontal electrical conducting structures which constitute electrical internal connections in the layer and besides each layer comprises further electrical conducting structures which provide electrical connections to other layers and to the exterior of the data processing device. The integrated data processing device has a scaleable architecture, such that it in principle can be configured with an almost unlimited processor and memory capacity. Particularly can the data processing device implement various forms of scaleable parallel architectures integrated with optimal interconnectivity in three dimensions.
摘要翻译：可扩展集成数据处理装置，特别是微型计算机，包括具有一个或多个处理器的处理单元和具有一个或多个存储器的存储单元。数据处理装置设置在载体基板（S）上并且包括相互叠放的彼此相邻的基本上平行的层（P，M，MP），处理单元和存储单元设置在一个或多个这样的层中，并且以选定的组合形式具有选定数量的处理器和存储器的分离层。在每个层中提供水平导电结构，其构成该层中的电内部连接，而且每个层包括提供与其它层的电连接以及数据处理装置的外部的电连接。集成数据处理设备具有可扩展的架构，原则上可以配置几乎无限的处理器和存储器容量。特别地，数据处理设备可以实现在三维中集成最佳互连性的各种形式的可扩展并行架构。

170. 发明授权

EP2194575B1 Substrate Dividing Method 有权
标题翻译：基板分割方法
公开(公告)号：EP2194575B1
公开(公告)日：2017-08-16
申请号：EP10157833.4
申请日：2003-03-06
申请人： Hamamatsu Photonics K.K.
发明人： FUJII, Yoshimaro , FUKUYO, Fumitsugu , FUKUMITSU, Kenshi , UCHIYAMA, Naoki
IPC分类号： H01L21/78 , B23K26/40
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/063 , B23K26/40 , B23K26/4075 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
摘要翻译：一种衬底分割方法，其能够在防止发生碎裂和破裂的同时使衬底变薄和分割。该基板分割方法包括以下步骤：将具有由功能器件19形成的前表面3的半导体基板1用激光照射，同时将聚光点定位在基板内，从而形成包括应有的熔融处理区域使半导体基板1内的多光子吸收，使包含熔融处理区域的改质区域形成切断的起点区域，以及在形成用于切割的起点区域的步骤之后研磨半导体衬底1的背面21，使得半导体衬底1达到预定厚度。

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