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141. 发明授权

US07585685B2 Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants 有权
标题翻译：从施加的偏置电压和电流以及一对常数确定等离子体反应器中的晶片电压的方法
公开(公告)号：US07585685B2
公开(公告)日：2009-09-08
申请号：US11508374
申请日：2006-08-23
申请人： Daniel J. Hoffman
发明人： Daniel J. Hoffman
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01J37/32174 , H01J37/32935
摘要： The voltage of a wafer on the pedestal of an RF plasma reactor is instantly determined from the applied bias current and the applied bias voltage sampled during plasma processing of the wafer using a pair constants. Prior to plasma processing of the wafer, a determination is made of first and second constants based upon electrical characteristics of a transmission line through which RF power is coupled to the pedestal. During plasma processing of the wafer, the wafer voltage is determined by performing the steps of sampling an RF input current and an RF input voltage at the impedance match circuit; multiplying the RF input voltage by the first constant to produce a first product; multiplying the RF input current by the second constant to produce a second product; and computing a sum of the first and second products.
摘要翻译： RF等离子体反应器的基座上的晶片的电压立即由施加的偏置电流和使用对常数在晶片的等离子体处理期间采样的施加的偏置电压确定。在等离子体处理晶片之前，基于RF功率与基座耦合的传输线的电特性确定第一和第二常数。在晶片的等离子体处理期间，通过执行在阻抗匹配电路处对RF输入电流和RF输入电压进行采样的步骤来确定晶片电压; 将RF输入电压乘以第一常数以产生第一乘积; 将RF输入电流乘以第二常数以产生第二乘积; 以及计算所述第一和第二乘积的和。

142. 发明授权

US07585384B2 Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor 有权
标题翻译：限制等离子体并降低等离子体反应器中的流动阻力的装置和方法
公开(公告)号：US07585384B2
公开(公告)日：2009-09-08
申请号：US12201156
申请日：2008-08-29
申请人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
发明人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
IPC分类号： C23C1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32633 , H01J37/3266
摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.
摘要翻译：一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

143. 发明申请

US20080314571A1 ANNULAR BAFFLE 有权
标题翻译：环形碎片
公开(公告)号：US20080314571A1
公开(公告)日：2008-12-25
申请号：US12109332
申请日：2008-04-24
申请人： Daniel J. Hoffman , Kallol Bera
发明人： Daniel J. Hoffman , Kallol Bera
IPC分类号： F28F13/12 , F28F9/22
CPC分类号： F15D1/0005 , C23C14/22 , C23C16/44 , C23C16/4412 , C23C16/4585 , C23C16/4586 , H01J37/32009 , H01J37/32623 , H01J37/32633 , H01J2237/334 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A baffle assembly for an etching apparatus is disclosed. The baffle assembly comprises a ring and a lower baffle portion having a curved wall extending between a flange portion and a lower frame portion. A heating assembly may be present within the lower frame portion to control the temperature of the baffle. The baffle assembly may help confine the plasma within the processing space in the chamber. The ring may comprise silicon carbide and the lower baffle portion may comprise aluminum.
摘要翻译：公开了一种用于蚀刻装置的挡板组件。挡板组件包括环和下挡板部分，其具有在凸缘部分和下框架部分之间延伸的弯曲壁。加热组件可能存在于下框架部分内以控制挡板的温度。挡板组件可以帮助将等离子体限制在腔室中的处理空间内。环可以包括碳化硅，并且下挡板部分可以包括铝。

144. 发明申请

US20080276958A1 SUBSTRATE CLEANING CHAMBER AND CLEANING AND CONDITIONING METHODS 有权
标题翻译：基板清洗室和清洁和调节方法
公开(公告)号：US20080276958A1
公开(公告)日：2008-11-13
申请号：US11745451
申请日：2007-05-08
申请人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
发明人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
IPC分类号： C25F3/12 , C25F7/00
CPC分类号： B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
摘要： A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
摘要翻译：衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。底座包括具有至少一个周边壁的圆盘。还描述了清洁室的清洁和调节过程。

145. 发明授权

US07440859B2 Method for determining plasma characteristics 失效
标题翻译：确定等离子体特性的方法
公开(公告)号：US07440859B2
公开(公告)日：2008-10-21
申请号：US11617802
申请日：2006-12-29
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： G01R23/16
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of a plasma at two different frequencies, and determining at least one characteristic of the plasma utilizing the metrics. In another embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model.
摘要翻译：提供了确定等离子体特性的方法。在一个实施例中，用于确定等离子体特性的方法包括以两个不同的频率获得等离子体的度量，以及使用该度量来确定等离子体的至少一个特性。在另一个实施例中，一种用于确定等离子体特性的方法包括获得与不同频率耦合到等离子体的第一波形和第二波形的电流和电压信息的度量，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，以及使用模型确定等离子体的至少一个特性。

146. 发明授权

US07375947B2 Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：使用偏置电源输出的晶圆电压测量对ESC电压进行反馈控制的方法
公开(公告)号：US07375947B2
公开(公告)日：2008-05-20
申请号：US11672362
申请日：2007-02-07
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/283 , B23B31/28
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer clamping voltage.
摘要翻译：在具有静电卡盘的等离子体反应器中，使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量确定晶片电压，并且该晶片电压用于精确地控制DC晶片钳位电压。

147. 发明申请

US20080110567A1 PLASMA CONFINEMENT BAFFLE AND FLOW EQUALIZER FOR ENHANCED MAGNETIC CONTROL OF PLASMA RADIAL DISTRIBUTION 审中-公开
标题翻译：用于等离子体辐射分布的增强磁控制的等离子体限制气体和流量均衡器
公开(公告)号：US20080110567A1
公开(公告)日：2008-05-15
申请号：US11751575
申请日：2007-05-21
申请人： Matthew L. Miller , Daniel J. Hoffman , Steven C. Shannon , Michael Kutney , James Carducci , Andrew Nguyen
发明人： Matthew L. Miller , Daniel J. Hoffman , Steven C. Shannon , Michael Kutney , James Carducci , Andrew Nguyen
IPC分类号： H01L21/306
CPC分类号： H01J37/32633 , H01J37/3244 , H01J37/32449
摘要： A plasma reactor with plasma confinement and plasma radial distribution capability. The reactor comprises a reactor chamber including a side wall and a workpiece support pedestal in the chamber and defining a pumping annulus between the pedestal and side wall and a pumping port at a bottom of the pumping annulus. The reactor further comprises a means for confining gas flow in an axial direction through the pumping annulus to prevent plasma from flowing to the pumping port. The reactor further comprises a means for compensating for asymmetry of gas flow pattern across the pedestal arising from placement of the pumping port. The reactor further comprises a means for controlling plasma distribution having an inherent tendency to promote edge-high plasma density distribution. The means for confining gas flow is depressed below the workpiece support sufficiently to compensate for the edge-high plasma distribution tendency of the means for controlling plasma distribution.
摘要翻译：一种具有等离子体约束和等离子体径向分布能力的等离子体反应器。该反应器包括反应室，该反应室包括室中的侧壁和工件支撑基座，并且在基座和侧壁之间限定了泵送环形空间以及在泵送环空的底部的泵送端口。反应器还包括用于将气流沿轴向限制通过泵送环的装置，以防止等离子体流到泵送端口。所述反应器还包括用于补偿穿过所述基座的由所述泵送端口的放置产生的气流图案的不对称性的装置。反应器还包括用于控制具有促进边缘 - 高等离子体密度分布的固有倾向的等离子体分布的装置。用于限制气流的装置在工件支撑下方被压下，足以补偿用于控制等离子体分布的装置的边缘 - 高等离子体分布趋势。

148. 发明授权

US07359177B2 Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：具有E.S.C.反馈控制的双偏压等离子体反应器电压使用晶圆电压测量在偏置电源输出
公开(公告)号：US07359177B2
公开(公告)日：2008-04-15
申请号：US11127036
申请日：2005-05-10
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/683 , H01T23/00 , G01L21/30 , G01R31/00 , H01J7/24 , H05B31/26 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.
摘要翻译：等离子体反应器具有双频等离子体RF偏压电源，其分别提供包括第一和第二频率分量f（1），f（2）的RF偏置功率，以及具有耦合到等离子体RF偏置的输入端的RF功率路径电源和耦合到晶片支撑基座的输出端，以及传感器电路，其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。反应器还包括处理器，用于分别提供晶片电压信号的第一和第二频率分量，分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和，以及第二和测量电压和测量电流的第二频率分量分别乘以第三和第四系数。处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压并乘以所选系数。

149. 发明授权

US07286948B1 Method for determining plasma characteristics 失效
标题翻译：确定等离子体特性的方法
公开(公告)号：US07286948B1
公开(公告)日：2007-10-23
申请号：US11424705
申请日：2006-06-16
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： G01R23/16
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model. In yet another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, measuring current and voltage for waveforms coupled to the plasma and having at least two different frequencies, and determining ion mass of a plasma from model and the measured current and voltage of the waveforms.
摘要翻译：提供了确定等离子体特性的方法。在一个实施例中，用于确定等离子体特性的方法包括获得与不同频率耦合到等离子体的第一和第二波形的电流和电压信息的度量，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，以及使用模型确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，测量耦合到等离子体并具有至少两个不同频率的波形的电流和电压，以及从模型确定等离子体的离子质量，测量的电流和电压的波形。

150. 发明授权

US07196283B2 Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface 有权
标题翻译：等离子体反应堆架空电源电极具有低电弧倾向，圆柱形气体出口和成形表面
公开(公告)号：US07196283B2
公开(公告)日：2007-03-27
申请号：US11046538
申请日：2005-01-28
申请人： Douglas A. Buchberger, Jr. , Daniel J. Hoffman , Olga Regelman , James Carducci , Keiji Horioka , Jang Gyoo Yang
发明人： Douglas A. Buchberger, Jr. , Daniel J. Hoffman , Olga Regelman , James Carducci , Keiji Horioka , Jang Gyoo Yang
IPC分类号： B23K9/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32183 , H01J37/3244
摘要： An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.
摘要翻译：形成等离子体反应器的天花板的至少一部分的顶部气体分配电极具有面向反应器的处理区域的底面。电极包括用于在电极顶部处的供给压力下接收处理气体的气体供应歧管和在每个孔口的一端处相对于来自气体供应歧管的电极轴向延伸的多个降压圆柱形孔。电极内的径向气体分布歧管径向延伸穿过电极。多个轴向延伸的高电导气流通道将多个降压孔中的相应端部的相对端连接到径向气体分配歧管。在电极的等离子体面向底面中形成多个高电导圆柱形气体出口孔，并且轴向延伸到径向气体分配歧管。

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