会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 136. 发明申请
    • THERAPEUTIC AGENT (Y-39983) FOR CORNEAL ENDOTHELIAL DYSFUNCTION
    • 治疗药物(Y-39983)用于角膜内膜功能障碍
    • US20120288482A1
    • 2012-11-15
    • US13519682
    • 2010-12-28
    • Hiroaki TakahashiYuji SakamotoTetsuo KidaTakeshi Tarui
    • Hiroaki TakahashiYuji SakamotoTetsuo KidaTakeshi Tarui
    • A61K31/437A61K35/44A61P27/02
    • A61K31/437A61K9/0048A61K9/08C12N5/0621C12N2501/999
    • The present invention aims to provide a means for effectively and conveniently treating diseases wherein corneal endothelial cells poor in proliferative capacity in vivo are damaged. The present invention provides a therapeutic agent for corneal endothelial dysfunction containing (R)-(+)-N-(1H-pyrrolo [2,3-b]pyridin-4-yl)-4-(1-aminoethyl)benzamide or a pharmacologically acceptable salt thereof (compound (Ia)) as active ingredient, an agent for promoting adhesion of corneal endothelial cells, containing compound (Ia), a culture medium for corneal endothelial cells, containing the agent for promoting adhesion, an implant for corneal endothelial keratoplasty, containing corneal endothelial cells, scaffold and compound (Ia), and a production method of a corneal endothelial preparation, including a step of cultivating corneal endothelial cells using the culture medium.
    • 本发明旨在提供一种有效且方便地治疗疾病的手段,其中体内增殖能力差的角膜内皮细胞被破坏。 本发明提供了含有(R) - (+) - N-(1H-吡咯并[2,3-b]吡啶-4-基)-4-(1-氨基乙基)苯甲酰胺的角膜内皮功能障碍的治疗剂 -3983>或其药理学上可接受的盐(化合物(Ia))作为活性成分,用于促进角膜内皮细胞粘附的试剂,含有化合物(Ia),用于角膜内皮细胞的培养基,其含有促进粘附的试剂, 用于角膜内皮角膜移植术的植入物,其包含角膜内皮细胞,支架和化合物(Ia),以及角膜内皮制剂的制备方法,包括使用培养基培养角膜内皮细胞的步骤。
    • 140. 发明授权
    • Nitride semiconductor laser element
    • 氮化物半导体激光元件
    • US08102891B2
    • 2012-01-24
    • US12716962
    • 2010-03-03
    • Tomonori MorizumiAtsuo MichiueHiroaki Takahashi
    • Tomonori MorizumiAtsuo MichiueHiroaki Takahashi
    • H01S5/00
    • H01S5/0281
    • A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order, a cavity end face formed by the nitride semiconductor layers, and a protective film formed on the cavity end face. The nitride semiconductor layers of the first and second conduction types have layers containing Al, and the active layer has layer containing In. The protective film has a region in which an axial orientation of crystals is the same as that of the cavity end face on the nitride semiconductor layers of the first and second conduction types, and has another region in which an axial orientation of crystals is different from that of the cavity end face on the active layer.
    • 氮化物半导体激光元件包括依次层叠具有第一导电类型,有源层和与第一导电类型不同的第二导电类型的氮化物半导体层的氮化物半导体层,空腔端面由 氮化物半导体层和形成在腔体端面上的保护膜。 第一和第二导电类型的氮化物半导体层具有包含Al的层,并且活性层具有包含In的层。 保护膜具有其中晶体的轴向取向与第一和第二导电类型的氮化物半导体层上的空腔端面相同的区域,并且具有另一区域,其中晶体的轴向取向不同于 活性层上的腔端面。