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    • 121. 发明申请
    • MEMS DEVICE WITH INTEGRAL PACKAGING
    • 具有整体封装的MEMS器件
    • US20080272867A1
    • 2008-11-06
    • US11929245
    • 2007-10-30
    • Michael B. CohnJi-Hai Xu
    • Michael B. CohnJi-Hai Xu
    • H01L21/48H01H51/22
    • H01H59/0009B81B7/0077B81B2201/018B81B2203/0118B81B2207/093B81C1/00301B81C1/00357B81C3/001B81C2201/019B81C2203/0109B81C2203/0118B81C2203/019H01H2059/0018H01H2059/0072
    • A MEMS device and method of making same is disclosed. In one embodiment, a micro-switch includes a base assembly comprising a movable structure bearing a contact pad. The base assembly is wafer-scale bonded to a lid assembly comprising an activator and a signal path. The movable structure moves within a sealed cavity formed during the bonding process. The signal path includes an input line and an output line separated by a gap, which prevents signals from propagating through the micro-switch when the switch is deactivated. In operation, a signal is launched into the signal path. When the micro-switch is activated, a force is established by the actuator, which pulls a portion of the movable structure upwards towards the gap in the signal path, until the contact pad bridges the gap between the input line and output line, allowing the signal to propagate through the micro-switch. Prior to bonding, the MEMS structures are annealed on a first wafer and the conductive traces and other metals are annealed on a second wafer to allow each wafer to be processed separately using different processes, e.g., different annealing temperatures.
    • 公开了MEMS器件及其制造方法。 在一个实施例中,微型开关包括基座组件,其包括承载接触垫的可移动结构。 基座组件被晶片刻度结合到包括激活器和信号路径的盖组件。 可移动结构在接合过程中形成的密封空腔内移动。 信号路径包括输入线和由间隙分开的输出线,当开关被去激活时,该线路防止信号通过微型开关传播。 在操作中,信号被发送到信号路径中。 当微动开关被激活时,致动器建立一个力,致动器将可移动结构的一部分朝向信号路径中的间隙向上拉,直到接触垫桥接输入线和输出线之间的间隙,从而允许 信号通过微型开关传播。 在结合之前,MEMS结构在第一晶片上退火,并且导电迹线和其它金属在第二晶片上进行退火,以允许使用不同工艺(例如不同的退火温度)分别对每个晶片进行加工。
    • 126. 发明授权
    • Microelectromechanical RF switch
    • 微机电RF开关
    • US06639494B1
    • 2003-10-28
    • US10321562
    • 2002-12-18
    • Nathan Bluzer
    • Nathan Bluzer
    • H01H5700
    • H01H59/0009H01H2001/0089H01H2059/0018H01H2059/0036H01H2059/0072
    • A MEMS switch with a bridge having three symmetric arms each having one end connected to a support arrangement and another end integral with a common central bridge portion. First and second conductors are deposited on a substrate, with the first conductor having an end with an open area which encompasses a pull down electrode which is also on the substrate, and of a height less than that of the conductor. A control voltage applied to the pull down electrode causes downward movement of the bridge, to present a relatively low impedance, thereby allowing a signal to propagate between the first and second conductors, without the bridge touching the pull down electrode. Each of the arms is slotted to reduce curl-induced stiffness.
    • 具有三个对称臂的桥的MEMS开关,每个臂具有连接到支撑装置的一端和与公共中心桥接部分成一体的另一端。 第一和第二导体沉积在衬底上,其中第一导体具有开口区域的端部,该开口区域也包围也在衬底上的下拉电极,并且具有比导体的高度的高度。 施加到下拉电极的控制电压引起桥的向下移动,以呈现相对低的阻抗,从而允许信号在第一和第二导体之间传播,而桥不接触下拉电极。 每个臂都开槽以减少卷曲引起的刚度。
    • 127. 发明授权
    • Twin configuration for increased life time in touch mode electrostatic actuators
    • 双重配置,可延长触摸模式静电执行器的使用寿命
    • US06211580B1
    • 2001-04-03
    • US09222096
    • 1998-12-29
    • Cleopatra CabuzEugen I. Cabuz
    • Cleopatra CabuzEugen I. Cabuz
    • H01H1964
    • H02N1/002H01H47/002H01H59/0009H01H2059/0018Y10T307/747Y10T307/826
    • An electrostatic actuator and drive configuration device for use in a system requiring a long term ON state operation. The device includes a first electrostatic actuator positioned to operate in the system requiring the long term ON state upon activation of a power supply. The device also includes a second electrostatic actuator positioned to operate in the system requiring the long term ON state upon activation of the power supply. A timer is connected to the power supply to alternately select the first or the second actuator for activation to drive the selected actuator to the ON state. The timer is controlled to select the first or second electrostatic actuator on an alternating basis to prevent either electrostatic actuator from remaining in the ON state for more than a predetermined time without the other actuator being selected. The electrostatic actuators may be configured in parallel or in series, depending upon the demands of the system. When the electrostatic actuators are switches, linear actuators or relays, they are normally connected side by side mechanically parallel. When the actuators are shutters, mirrors or valves, normal connection is in sequence end to end. When devices are selected to be in the ON condition, the selection should be such that each device is closed before the other is opened.
    • 用于需要长期接通状态操作的系统中的静电致动器和驱动配置装置。 该装置包括第一静电致动器,其定位成在激活电源时需要长期接通状态的系统中操作。 该装置还包括第二静电致动器,其定位成在激活电源时需要长期接通状态的系统中操作。 定时器连接到电源以交替地选择第一或第二致动器进行激活以将所选择的致动器驱动到接通状态。 控制定时器以交替的方式选择第一静电致动器或第二静电致动器,以防止静电致动器在没有选择其它致动器的情况下保持在ON状态超过预定时间。 静电致动器可以根据系统的要求并联或串联配置。 当静电执行器是开关,线性执行器或继电器时,它们通常并排并排并排。 当执行器是百叶窗,镜子或阀门时,正常连接按顺序排列到最后。 当选择设备处于ON状态时,选择应该使每个设备在其他设备打开之前关闭。
    • 128. 发明授权
    • Micromachined relay and method of forming the relay
    • 微加工继电器和形成继电器的方法
    • US5627396A
    • 1997-05-06
    • US443456
    • 1995-05-18
    • Christopher D. JamesHenry S. Katzenstein
    • Christopher D. JamesHenry S. Katzenstein
    • H01L29/84H01H1/20H01H59/00H01L29/82
    • H01H59/0009H01H1/20H01H2001/0084H01H2059/0018Y10T307/878
    • A bridging member extending across a cavity in a semiconductor substrate (e.g. signal crystal silicon) has successive layers--a masking layer, an electrically conductive layer (e.g. polysilicon) and an insulating layer (e.g. SiO.sub.2). A first electrical contact (e.g. gold coated with ruthenium) extends on the insulating layer in a direction perpendicular to the extension of the bridging member across the cavity. A pair of bumps (e.g. gold) are on the insulating layer each between the contact and one of the cavity ends. Initially the bridging member and then the contact and the bumps are formed on the substrate and then the cavity is etched in the substrate through holes in the bridging member. A pair of second electrical contacts (e.g. gold coated with ruthenium) are on the surface of an insulating substrate (e.g. pyrex glass) adjacent the semiconductor substrate. The two substrates are bonded after the contacts are cleaned. The first contact is normally separated from the second contacts because the bumps engage the insulating substrate surface. When a voltage is applied between an electrically conductive layer on the insulating substrate surface and the polysilicon layer, the bridging member is deflected so that the first contact engages the second contacts. Electrical leads extend on the surface of the insulating substrate from the second contacts to bonding pads disposed adjacent a second cavity in the semiconductor substrate. The resultant relays on a wafer may be separated by sawing the semiconductor and insulating substrates at the position of the second cavity in each relay to expose the pads for electrical connections.
    • 延伸穿过半导体衬底(例如信号晶体硅)中的空腔的桥接构件具有连续的层 - 掩模层,导电层(例如多晶硅)和绝缘层(例如SiO 2)。 第一电接触件(例如镀有钌的金)在垂直于桥接构件的延伸方向的绝缘层上延伸穿过空腔。 一对凸起(例如金)在绝缘层上分别位于接触件和一个空腔端部之间。 最初,桥接构件,然后在衬底上形成接触和凸块,然后通过桥接构件中的孔在衬底中蚀刻空腔。 一对第二电触点(例如镀有钌的金)位于与半导体衬底相邻的绝缘衬底(例如耐热玻璃)的表面上。 触点清洁后,两个基板接合。 第一触点通常与第二触点分离,因为凸块与绝缘基板表面接合。 当在绝缘衬底表面上的导电层和多晶硅层之间施加电压时,桥接构件被偏转,使得第一触点接合第二触点。 电引线在绝缘基板的表面上从第二触点延伸到邻近半导体衬底中的第二腔的接合焊盘。 可以通过在每个继电器中的第二腔的位置处锯切半导体和绝缘基板来分离晶片上的所得继电器,以露出用于电连接的焊盘。
    • 129. 发明授权
    • Micromachined relay and method of forming the relay
    • 微加工继电器和形成继电器的方法
    • US5620933A
    • 1997-04-15
    • US445139
    • 1995-05-19
    • Christopher D. JamesHenry S. Katzenstein
    • Christopher D. JamesHenry S. Katzenstein
    • H01L29/84H01H1/20H01H59/00H01L21/461H01L21/465
    • H01H59/0009H01H1/20H01H2001/0084H01H2059/0018Y10T307/878
    • A bridging member extending across a cavity in a semiconductor substrate (e.g. single crystal silicon) has successive layers--a masking layer, an electrically conductive layer (e.g. polysilicon) and an insulating layer (e.g. SiO.sub.2). A first electrical contact (e.g. gold coated with ruthenium) extends on the insulating layer in a direction perpendicular to the extension of the bridging member across the cavity. A pair of bumps (e.g. gold) are on the insulating layer each between the contact and one of the cavity ends. Initially the bridging member and then the contact and the bumps are formed on the substrate and then the cavity is etched in the substrate through holes in the bridging member. A pair of second electrical contacts (e.g. gold coated with ruthenium) are on the surface of an insulating substrate (e.g. pyrex glass) adjacent the semiconductor substrate. The two substrates are bonded after the contacts are cleaned. The first contact is normally separated from the second contacts because the bumps engage the insulating substrate surface. When a voltage is applied between an electrically conductive layer on the insulating substrate surface and the polysilicon layer, the bridging member is deflected so that the first contact engages the second contacts. Electrical leads extend on the surface of the insulating substrate from the second contacts to bonding pads disposed adjacent a second cavity in the semiconductor substrate. The resultant relays on a wafer may be separated by sawing the semiconductor and insulating substrates at the position of the second cavity in each relay to expose the pads for electrical connections.
    • 延伸穿过半导体衬底(例如单晶硅)中的空腔的桥接构件具有连续的层 - 掩模层,导电层(例如多晶硅)和绝缘层(例如SiO 2)。 第一电接触件(例如镀有钌的金)在垂直于桥接构件的延伸方向的绝缘层上延伸穿过空腔。 一对凸起(例如金)在绝缘层上分别位于接触件和一个空腔端部之间。 最初,桥接构件,然后在衬底上形成接触和凸块,然后通过桥接构件中的孔在衬底中蚀刻空腔。 一对第二电触点(例如镀有钌的金)位于与半导体衬底相邻的绝缘衬底(例如耐热玻璃)的表面上。 触点清洁后,两个基板接合。 第一触点通常与第二触点分离,因为凸块与绝缘基板表面接合。 当在绝缘衬底表面上的导电层和多晶硅层之间施加电压时,桥接构件被偏转,使得第一触点接合第二触点。 电引线在绝缘基板的表面上从第二触点延伸到邻近半导体衬底中的第二腔的接合焊盘。 可以通过在每个继电器中的第二腔的位置处锯切半导体和绝缘基板来分离晶片上的所得继电器,以露出用于电连接的焊盘。