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121. 发明授权

US08994036B2 Semiconductor device with heat removal structure and related production method 有权
标题翻译：具有散热结构的半导体器件及相关生产方法
公开(公告)号：US08994036B2
公开(公告)日：2015-03-31
申请号：US13864353
申请日：2013-04-17
申请人： Forschungsverbund Berlin E.V.
发明人： Tomas Krämer
IPC分类号： H01L23/373 , H01L21/48 , H01L23/367
CPC分类号： H01L23/3738 , H01L21/4871 , H01L23/367 , H01L23/3677 , H01L23/373 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： According to the invention, a semiconductor device composite structure is provided which comprises an initial substrate with discrete, integrated devices and a heat removal structure. The heat removal structure comprises: a bond layer which is attached to the initial substrate or the devices, a heat removal structure which is attached on the bond layer and which consists of a material with a specific thermal conductivity which is at least double the level of the average specific heat conductivity of the initial substrate or the devices, and one or more metallic thermal bridges which thermally connect the devices with the heat removal structure via the bond layer. The thermal bridges are designed as vertical through connections (vias) through the bond and heat removal structure. The invention furthermore relates to an associated production method.
摘要翻译：根据本发明，提供一种半导体器件复合结构，其包括具有分立的集成器件的初始衬底和散热结构。除热结构包括：附接到初始衬底或器件的接合层，附着在接合层上的散热结构，其由比导热系数的至少两倍的材料组成初始衬底或器件的平均比热导率以及通过接合层将器件与散热结构热连接的一个或多个金属热桥。热桥通过焊接和散热结构设计为垂直通孔连接（通孔）。本发明还涉及相关的生产方法。

122. 发明申请

US20150018269A1 STRUCTURAL MIMETICS OF PROLINE-RICH PEPTIDES AND USE THEREOF 有权
标题翻译：富含胶原蛋白的结构化模型及其用途
公开(公告)号：US20150018269A1
公开(公告)日：2015-01-15
申请号：US14241245
申请日：2012-08-24
申请人： Ronald Kühne , Hartmut Oschkinat , Robert Opitz , Matthias Müller , Hans-Günther Schmalz , Cedric Reuter , Peter Huy
发明人： Ronald Kühne , Hartmut Oschkinat , Robert Opitz , Matthias Müller , Hans-Günther Schmalz , Cedric Reuter , Peter Huy
IPC分类号： C07D471/20 , C07K7/06
CPC分类号： C07D471/20 , A61K31/437 , A61K38/00 , C07K5/06139 , C07K7/06 , Y02A50/402 , Y02A50/473 , Y02A50/475 , Y02A50/478 , Y02A50/479 , Y02A50/481
摘要： The invention relates to compounds that can be used, in particular, as structural mimetics of proline-rich peptides and are correspondingly able to bond with proline-rich-motif binding domains (PRM domains) of proteins. The invention further relates to the use of these compounds as pharmaceutically active agents, as well as the use of the pharmaceutically active agents for the treatment of bacterial, neurodegenerative and tumor diseases.
摘要翻译：本发明涉及可以特别用作富含脯氨酸肽的结构模拟物并且相应地能够与蛋白质的富含脯氨酸 - 基序结合结构域（PRM结构域）结合的化合物。本发明还涉及这些化合物作为药物活性剂的用途，以及用于治疗细菌，神经变性和肿瘤疾病的药物活性剂。

123. 发明申请

US20140312301A1 PRODUCTION OF A SEMICONDUCTOR DEVICE HAVING AT LEAST ONE COLUMN-SHAPED OR WALL-SHAPED SEMICONDUCTOR ELEMENT 有权
标题翻译：具有至少一个柱形或半透明半导体元件的半导体器件的生产
公开(公告)号：US20140312301A1
公开(公告)日：2014-10-23
申请号：US14357583
申请日：2012-11-09
申请人： Forschungsverbund Berlin e.V.
发明人： Oliver Brandt , Lutz Geelhaar , Vladimir Kaganer , Martin Woelz
IPC分类号： H01L29/12 , H01L31/0352 , H01L29/16 , H01L33/06 , H01L29/04 , H01L29/20
CPC分类号： H01L29/122 , H01L29/04 , H01L29/16 , H01L29/20 , H01L29/2003 , H01L31/035209 , H01L33/06 , H01L33/18 , H01L2924/0002 , H01L2924/00
摘要： Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type. According to the invention, at least a height (h2) of the section (12, 22) of the second crystal type and a lateral thickness (D) of the active region (40) is formed perpendicular to the main direction, in such a manner that the lattice strain in one of the sections (11) of the first crystal type also depends on the lattice constants in the other section (13) of the first crystal type. A semiconductor device (100) is also described, having at least one column-shaped or wall-shaped semiconductor element (10, 20) on a substrate (30), which can be produced in particular by means of the stated method.
摘要翻译：描述了一种半导体器件（100）的制造方法，其中在基板（30）上形成有沿主方向（z）延伸的至少一个柱状或壁状半导体器件（10,20），其中在有源区域（40）中形成有第一晶体类型的至少两个部分（11,13,21,23）和第二晶体类型的一个部分（12,22），每个部分具有相应的预定高度 h1，h2），其中第一和第二晶体类型具有不同的晶格常数，并且第一晶体类型的每个部分具有取决于第二晶体类型的截面中的晶格常数的晶格应变。根据本发明，垂直于主方向形成第二晶体类型的部分（12,22）和有源区（40）的横向厚度（D）的至少高度（h2）第一晶体类型的部分（11）之一的晶格应变也取决于第一晶体类型的另一部分（13）中的晶格常数。还描述了一种半导体器件（100），其在衬底（30）上具有至少一个柱状或壁状半导体元件（10,20），其特别可以通过所述方法制造。

124. 发明授权

US08867586B2 Diode laser 有权
标题翻译：二极管激光器
公开(公告)号：US08867586B2
公开(公告)日：2014-10-21
申请号：US13431530
申请日：2012-03-27
申请人： Bernd Eppich
发明人： Bernd Eppich
IPC分类号： H01S3/08 , H01S5/14 , H01S5/00
CPC分类号： H01S5/141 , H01S5/005
摘要： A diode laser is provided with wavelength stabilization and vertical collimation of the emitted radiation, which allows a small distance of the volume Bragg grating from the emitting surface, a small vertical diameter of the collimated beam and also compensation for manufacturing tolerances affecting the shape of the grating and the lens. The diode laser comprises an external frequency-selective element for wavelength stabilization of the laser radiation, wherein the external frequency-selective element comprises an entry surface facing the exit facet and an exit surface facing away from the exit facet and is designed as a volume Bragg grating; and wherein the external frequency-selective element is designed in such a manner that the divergence of the radiation emitting from the exit facet is reduced during passage through the external frequency-selective element.
摘要翻译：二极管激光器具有发射辐射的波长稳定和垂直准直，这允许体积布拉格光栅距离发射表面的小距离，准直光束的小垂直直径，并且还补偿影响其形状的制造公差光栅和镜头。二极管激光器包括用于激光辐射的波长稳定的外部频率选择元件，其中外部频率选择元件包括面向出口小面的入口表面和背离出口小面的出口表面，并被设计为体积布拉格光栅并且其中所述外部频率选择元件被设计成使得在通过所述外部频率选择元件的过程中从所述出射小面发射的辐射的发散被减小。

125. 发明授权

US08824518B2 Two-cavity surface-emitting laser 有权
标题翻译：双腔表面发射激光器
公开(公告)号：US08824518B2
公开(公告)日：2014-09-02
申请号：US12968727
申请日：2010-12-15
申请人： Günther Tränkle , Joachim Piprek , Hans Wenzel , Götz Erbert , Markus Weyers , Andrea Knigge
发明人： Günther Tränkle , Joachim Piprek , Hans Wenzel , Götz Erbert , Markus Weyers , Andrea Knigge
IPC分类号： H01S5/183 , H01S5/14 , H01S5/04 , H01S5/026 , H01S5/40
CPC分类号： H01S5/183 , H01S5/026 , H01S5/041 , H01S5/14 , H01S5/4025 , H01S5/4087
摘要： A the vertical-cavity surface-emitting laser includes a stripe-shaped active medium (10) having an emission maximum at a first wavelength (λ1), wherein a first reflector (18) is arranged below the stripe-shaped active medium (10) and a second reflector (20) is arranged above the stripe-shaped active medium (10), with the first reflector (18) facing the second reflector (20), wherein the first reflector (18) and a second reflector (20) have a reflectivity maximum in the region of the first wavelength (λ1), wherein a third reflector (12) and a fourth reflector (13) are each arranged on a side above or next to the stripe-shaped active medium (10), wherein the third reflector (12) faces the fourth reflector (13), and wherein the third reflector (12) and the fourth reflector (13) have a reflectivity maximum in the region of a second wavelength (λ2), wherein the first wavelength (λ1) is greater than the second wavelength (λ2).
摘要翻译：垂直腔表面发射激光器包括具有第一波长（λ1）的发射最大值的条形有源介质（10），其中第一反射器（18）布置在条形活性介质（10）的下方，并且第二反射器（20）布置在条形有源介质（10）的上方，第一反射器（18）面向第二反射器（20），其中第一反射器（18）和第二反射器（20）具有在第一波长区域（λ1）的反射率最大值，其中第三反射器（12）和第四反射器（13）分别布置在条状活性介质（10）上方或旁边的一侧，其中，第三反射器（12）面向第四反射器（13），并且其中第三反射器（12）和第四反射器（13）在第二波长（λ2）的区域中具有反射率最大值，其中第一波长（λ1）大于第二波长（λ2）。

126. 发明授权

US08648466B2 Method for producing a metallization having two multiple alternating metallization layers for at least one contact pad and semiconductor wafer having said metallization for at least one contact pad 有权
标题翻译：用于制造具有用于至少一个接触焊盘的两个多个交替金属化层和具有用于至少一个接触焊盘的所述金属化的半导体晶片的金属化方法
公开(公告)号：US08648466B2
公开(公告)日：2014-02-11
申请号：US13257346
申请日：2010-03-18
申请人： Victor Sidorov , Rimma Zhytnytska , Joachim Wuerfl
发明人： Victor Sidorov , Rimma Zhytnytska , Joachim Wuerfl
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/12 , H01L2224/03 , H01L2224/0401 , H01L2224/05007 , H01L2224/05556 , H01L2224/0558 , H01L2224/05611 , H01L2224/05616 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/0566 , H01L2224/05669 , H01L2224/11472 , H01L2224/11901 , H01L2224/16 , H01L2924/00013 , H01L2924/01005 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump. The method for producing a metallization (40) for at least one contact pad (20) according to the invention comprises the following process steps: applying at least one contact pad (20) to a substrate (10), applying a barrier layer (30) to the top side of the at least one contact pad (20) and applying a metallization (40) to the top side of the barrier layer (30), characterized in that the barrier layer (30) and the metallization (40) are applied by means of physical separation and that the metallization (40) is designed as a layer structure having two multiple alternating metallization layers (41, 42), wherein the first metallization layer (41) is made of nickel or an Ni alloy having a layer thickness of less than 500 nm and the second metallization layer (42) is made of a material that is different than nickel and is electrically conductive.
摘要翻译：本发明涉及一种用于至少一个接触焊盘和具有用于至少一个接触焊盘的金属化的半导体晶片的金属化的方法。本发明涉及一种金属化（以及具有相应的金属化的半导体晶片）及其制造方法，其首先可以通过物理气相分离（干式分离）来制造，其次确保了大量凸块的充分粘附。根据本发明的用于制造用于至少一个接触焊盘（20）的金属化（40）的方法包括以下工艺步骤：将至少一个接触焊盘（20）施加到衬底（10）上，施加阻挡层（30））到所述至少一个接触焊盘（20）的顶侧并且将金属化（40）施加到所述阻挡层（30）的顶侧，其特征在于，所述阻挡层（30）和所述金属化层（40）是通过物理分离施加金属化（40）被设计为具有两个多个交替金属化层（41,42）的层结构，其中第一金属化层（41）由镍或具有层小于500nm的厚度和第二金属化层（42）由不同于镍的材料制成并且是导电的。

127. 发明申请

US20130328483A1 MICROWAVE ICP RESONATOR 审中-公开
标题翻译：微波ICP谐振器
公开(公告)号：US20130328483A1
公开(公告)日：2013-12-12
申请号：US13884973
申请日：2011-11-15
申请人： Roland Gesche , Horia-Eugen Porteanu , Silvio Kühn
发明人： Roland Gesche , Horia-Eugen Porteanu , Silvio Kühn
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32247
摘要： A microwave resonator for inductively generating a plasma (5) is introduced. The microwave resonator comprises a first tube (4) and a conductive, preferably metal, plate (1). The tube (4) is designed for connection to a supply device for a process gas and for conveying the process gas and comprises a dielectric material. The conductive plate (1) has a first, preferably cylindrical, hole (2), which extends from a first opening on a first side of the conductive plate (1) to a second opening on a second side, opposite the first side, of the conductive plate (1). The first tube (4) is arranged in the first hole (2). The conductive plate (1) also has a first slit (3), which is open towards the first and the second side of the conductive plate (1) and towards the first hole (2).The invention also introduces a plasma generator with such a microwave resonator.
摘要翻译：引入用于感应地产生等离子体（5）的微波谐振器。微波谐振器包括第一管（4）和导电的，优选为金属的板（1）。管（4）被设计用于连接到用于处理气体的供应装置并且用于输送处理气体并且包括电介质材料。导电板（1）具有第一优选为圆柱形的孔（2），其从导电板（1）的第一侧上的第一开口延伸到与第一侧相对的第二侧上的第二开口导电板（1）。第一管（4）布置在第一孔（2）中。导电板（1）还具有朝向导电板（1）的第一侧和第二侧开口并朝向第一孔（2）的第一狭缝（3）。本发明还引入了具有这种微波谐振器的等离子体发生器。

128. 发明授权

US08545764B2 Microplasma array 有权
标题翻译：微血管阵列
公开(公告)号：US08545764B2
公开(公告)日：2013-10-01
申请号：US11813669
申请日：2006-01-11
申请人： Roland Gesche
发明人： Roland Gesche
IPC分类号： B01J19/08
CPC分类号： H01J37/32082 , H01J37/32596 , H01J61/09
摘要： A microplasma array for the production of low-temperature plasmas at or near atmospheric pressures is described. The walls of holes made in a substrate at regular intervals with respect to one another form hollow electrodes and are coated with metal. The hollow electrodes are supplied individually or as a group from one side of the substrate with an electrical excitation in the GHz-region.
摘要翻译：描述了在等于或接近大气压力下生产低温等离子体的微量阵列。相对于彼此以规则间隔形成的孔的壁形成中空电极并且涂覆有金属。中空电极单独地或作为一组从基板的一侧以GHz区域中的电激励提供。

129. 发明申请

US20130251631A1 LOW MOLECULAR WEIGHT THYROID STIMULATING HORMONE RECEPTOR (TSHR) AGONISTS 有权
标题翻译：低分子量甲状腺刺激激素受体（TSHR）激素
公开(公告)号：US20130251631A1
公开(公告)日：2013-09-26
申请号：US13897330
申请日：2013-05-17
申请人： Forschungsverbund Berlin E.V. , The Government of the United States of America as represented by the Secretary of the Department of
发明人： Marvin C. Gershengorn , Susanne Neumann , Bruce M. Raaka , Craig J. Thomas , James Inglese , Noel T. Southall , Steven Titus , Wei Zheng , Wenwei Huang , Gerd Krause , Gunnar Kleinau
IPC分类号： C07D405/06 , A61K51/00 , A61K31/517
CPC分类号： C07D405/06 , A61K31/517 , A61K49/0004 , A61K51/00 , C07D239/91 , C07D401/06 , C07D405/14 , C07D487/04
摘要： Disclosed are oxo-hydroquinazolines that are useful as selective TSHR agonists. The compounds may be used for detecting or treating thyroid cancer, or treating a bone degenerative disorder.
摘要翻译：公开了可用作选择性TSHR激动剂的氧代 - 氢喹唑啉。该化合物可用于检测或治疗甲状腺癌或治疗骨退行性疾病。

130. 发明申请

US20130208748A1 LASER DIODE WITH HIGH EFFICIENCY 有权
标题翻译：激光二极管效率高
公开(公告)号：US20130208748A1
公开(公告)日：2013-08-15
申请号：US13823277
申请日：2011-09-12
申请人： Paul Crump , Goetz Erbert , Hans Wenzel
发明人： Paul Crump , Goetz Erbert , Hans Wenzel
IPC分类号： H01S5/20
CPC分类号： H01S5/20 , A61B18/203 , A61B2018/00476 , A61B2090/049 , H01S5/2031 , H01S5/22 , H01S5/3213 , H01S2301/185
摘要： It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time.For this purpose, the active layer (10), the first cladding layer (14), the first waveguide layer (12), the second waveguide layer (16), and the second cladding layer (18) should be designed such that 0.01 μm≦dWL≦1.0 μm and Δn≧0.04, where dWL is the sum total of the layer thickness of the first waveguide layer (12), the layer thickness of the active layer (10), and the layer thickness of the second waveguide layer (16) and Δn is a maximum of the refractive index difference between the first cladding layer (14) and the first waveguide layer (12) and the refractive index difference between the second waveguide layer (16) and the second cladding layer (18).
摘要翻译：本发明的目的是同时具有高效率和高眼睛安全性的光源。为此，应设计有源层（10），第一覆层（14），第一波导层（12），第二波导层（16）和第二覆层（18），使得0.01μm @ dWL @ 1.0mum和Deltan> = 0.04，其中dWL是第一波导层（12）的层厚度的总和，有源层（10）的层厚度和第二波导层的层厚度（16）和Deltan是第一包层（14）和第一波导层（12）之间的折射率差和第二波导层（16）与第二包层（18）之间的折射率差的最大值，。

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