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1. 发明授权

US09184235B2 Production of a semiconductor device having at least one column-shaped or wall-shaped semiconductor element 有权
标题翻译：制造具有至少一个柱状或壁状半导体元件的半导体器件
公开(公告)号：US09184235B2
公开(公告)日：2015-11-10
申请号：US14357583
申请日：2012-11-09
申请人： Forschungsverbund Berlin e.V.
发明人： Oliver Brandt , Lutz Geelhaar , Vladimir Kaganer , Martin Woelz
IPC分类号： H01L21/00 , H01L29/06 , H01L27/15 , H01L31/109 , H01L29/12 , H01L33/18 , H01L29/04 , H01L29/16 , H01L29/20 , H01L31/0352 , H01L33/06
CPC分类号： H01L29/122 , H01L29/04 , H01L29/16 , H01L29/20 , H01L29/2003 , H01L31/035209 , H01L33/06 , H01L33/18 , H01L2924/0002 , H01L2924/00
摘要： Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type. According to the invention, at least a height (h2) of the section (12, 22) of the second crystal type and a lateral thickness (D) of the active region (40) is formed perpendicular to the main direction, in such a manner that the lattice strain in one of the sections (11) of the first crystal type also depends on the lattice constants in the other section (13) of the first crystal type. A semiconductor device (100) is also described, having at least one column-shaped or wall-shaped semiconductor element (10, 20) on a substrate (30), which can be produced in particular by means of the stated method.
摘要翻译：描述了一种半导体器件（100）的制造方法，其中在基板（30）上形成有沿主方向（z）延伸的至少一个柱状或壁状半导体器件（10,20），其中在有源区域（40）中形成有第一晶体类型的至少两个部分（11,13,21,23）和第二晶体类型的一个部分（12,22），每个部分具有相应的预定高度 h1，h2），其中第一和第二晶体类型具有不同的晶格常数，并且第一晶体类型的每个部分具有取决于第二晶体类型的截面中的晶格常数的晶格应变。根据本发明，垂直于主方向形成第二晶体类型的部分（12,22）和有源区（40）的横向厚度（D）的至少高度（h2）第一晶体类型的部分（11）之一的晶格应变也取决于第一晶体类型的另一部分（13）中的晶格常数。还描述了一种半导体器件（100），其在衬底（30）上具有至少一个柱状或壁状半导体元件（10,20），其特别可以通过所述方法制造。

2. 发明申请

US20140312301A1 PRODUCTION OF A SEMICONDUCTOR DEVICE HAVING AT LEAST ONE COLUMN-SHAPED OR WALL-SHAPED SEMICONDUCTOR ELEMENT 有权
标题翻译：具有至少一个柱形或半透明半导体元件的半导体器件的生产
公开(公告)号：US20140312301A1
公开(公告)日：2014-10-23
申请号：US14357583
申请日：2012-11-09
申请人： Forschungsverbund Berlin e.V.
发明人： Oliver Brandt , Lutz Geelhaar , Vladimir Kaganer , Martin Woelz
IPC分类号： H01L29/12 , H01L31/0352 , H01L29/16 , H01L33/06 , H01L29/04 , H01L29/20
CPC分类号： H01L29/122 , H01L29/04 , H01L29/16 , H01L29/20 , H01L29/2003 , H01L31/035209 , H01L33/06 , H01L33/18 , H01L2924/0002 , H01L2924/00
摘要： Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type. According to the invention, at least a height (h2) of the section (12, 22) of the second crystal type and a lateral thickness (D) of the active region (40) is formed perpendicular to the main direction, in such a manner that the lattice strain in one of the sections (11) of the first crystal type also depends on the lattice constants in the other section (13) of the first crystal type. A semiconductor device (100) is also described, having at least one column-shaped or wall-shaped semiconductor element (10, 20) on a substrate (30), which can be produced in particular by means of the stated method.
摘要翻译：描述了一种半导体器件（100）的制造方法，其中在基板（30）上形成有沿主方向（z）延伸的至少一个柱状或壁状半导体器件（10,20），其中在有源区域（40）中形成有第一晶体类型的至少两个部分（11,13,21,23）和第二晶体类型的一个部分（12,22），每个部分具有相应的预定高度 h1，h2），其中第一和第二晶体类型具有不同的晶格常数，并且第一晶体类型的每个部分具有取决于第二晶体类型的截面中的晶格常数的晶格应变。根据本发明，垂直于主方向形成第二晶体类型的部分（12,22）和有源区（40）的横向厚度（D）的至少高度（h2）第一晶体类型的部分（11）之一的晶格应变也取决于第一晶体类型的另一部分（13）中的晶格常数。还描述了一种半导体器件（100），其在衬底（30）上具有至少一个柱状或壁状半导体元件（10,20），其特别可以通过所述方法制造。

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