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    • 122. 发明授权
    • MOS-type solid-state imaging apparatus
    • MOS型固态成像装置
    • US07369169B2
    • 2008-05-06
    • US10916409
    • 2004-08-12
    • Yoshiyuki MatsunagaShinji OhsawaNobuo NakamuraHirofumi YamashitaHiroki Miura
    • Yoshiyuki MatsunagaShinji OhsawaNobuo NakamuraHirofumi YamashitaHiroki Miura
    • H04N5/335
    • H04N5/3658H01L27/14609H01L27/14643H04N5/3575H04N5/365H04N5/374H04N5/3745H04N5/378
    • An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
    • MOS型固态成像装置包括:通过二维排列在半导体衬底上作为光电转换部分的单位单元形成的成像区域,沿着成像区域的行方向布置的多个垂直地址线,以选择行 要被寻址的单位单元,沿着成像区域的列方向布置的多条垂直信号线,以从每列中的单位单元读出信号;多个负载晶体管,每个连接到每个垂直信号的一端 线,以及多个水平选择晶体管,每个连接到每个垂直信号线的另一端。 在该装置中,每个单位单元包括用作光电转换部分的光电二极管,具有栅极的放大晶体管,来自光电二极管的输出端分别连接到垂直信号线和垂直地址的源极和漏极 连接在放大晶体管的栅极和垂直地址线之间的地址电容器,以及与地址电容器并联连接的复位晶体管。
    • 124. 发明授权
    • Solid-state image pickup device and pixel defect testing method thereof
    • 固态图像拾取器件及其像素缺陷测试方法
    • US07268812B2
    • 2007-09-11
    • US10603693
    • 2003-06-26
    • Hiroki SatoNobuo NakamuraKeiji MabuchiTakashi AbeTomoyuki UmedaHiroaki FujitaEiichi Funatsu
    • Hiroki SatoNobuo NakamuraKeiji MabuchiTakashi AbeTomoyuki UmedaHiroaki FujitaEiichi Funatsu
    • H04N9/64H04N5/217
    • H04N17/002H04N5/335H04N5/367
    • A solid-state image pickup device and a pixel defect testing method thereof are disclosed. A solid-state image pickup device including: a pixel unit having a plurality of unit pixels that perform photoelectric conversion; a driving circuit for driving the pixel unit to control output of a pixel output signal; an output signal processing circuit for subjecting the pixel output signal outputted from the pixel unit according to the driving of the driving circuit to predetermined signal processing, and outputting a resulting pixel output signal; a pixel defect determining circuit for capturing the pixel output signal outputted from the pixel unit according to the driving of the driving circuit, and determining a pixel defect by comparing the pixel output signal with a predetermined reference signal; and a timing generator for supplying a predetermined operating pulse to the driving circuit, the output signal processing circuit, and the pixel defect determining circuit.
    • 公开了一种固态图像拾取装置及其像素缺陷测试方法。 一种固态图像拾取装置,包括:具有执行光电转换的多个单位像素的像素单元; 用于驱动像素单元以控制像素输出信号的输出的驱动电路; 输出信号处理电路,用于根据驱动电路的驱动对从像素单元输出的像素输出信号进行预定的信号处理,并输出所得到的像素输出信号; 像素缺陷确定电路,用于根据驱动电路的驱动来捕获从像素单元输出的像素输出信号;以及通过将像素输出信号与预定参考信号进行比较来确定像素缺陷; 以及定时发生器,用于向驱动电路,输出信号处理电路和像素缺陷确定电路提供预定的操作脉冲。
    • 125. 发明申请
    • Amplification type image pickup apparatus and method of controlling the amplification type image pickup apparatus
    • 放大型图像拾取装置和控制放大型图像拾取装置的方法
    • US20050231619A1
    • 2005-10-20
    • US11154604
    • 2005-06-17
    • Nobuo NakamuraYoriko TanakaYoshitaka EgawaShinji OhsawaTadashi SugikiYukio Endo
    • Nobuo NakamuraYoriko TanakaYoshitaka EgawaShinji OhsawaTadashi SugikiYukio Endo
    • H01L27/146H04N5/235H04N5/335H04N5/341H04N5/347H04N5/353H04N5/355H04N5/369H04N5/372H04N5/374H04N5/3745
    • H04N5/2355H04N5/235H04N5/35527H04N5/35572H04N5/35581H04N5/372H04N5/3728H04N5/374
    • An image pickup apparatus comprising an array of unit cells, vertical signal lines, and a control circuit. The unit cells are arranged in rows and columns. Each unit cell has a light-receiving device for receiving light and generating an electric charge corresponding to the light, a charge-accumulating section for accumulating the electric charge generated by the light-receiving device, a transfer device for transferring the electric charge from the light-receiving device to the charge-accumulating section, and a charge-limiting device for limiting the electric charge accumulated in the charge-accumulating section. The vertical signal lines extend along the columns of unit cells, respectively, each for receiving a electric data item corresponding to the electric charge accumulated in the charge-accumulating section of any unit cell of the associated column. The control circuit controls each of the unit cells, causing the charge-limiting device to limit the charge generated by the light-receiving device during a first period and transferred to the charge-accumulating section through the transfer device. The charge generated by the light-receiving device during a second period following the first period and transferred to the charge-accumulating section through the transfer device is added to the electric charge accumulated in the charge-accumulating section.
    • 一种图像拾取装置,包括单位单元阵列,垂直信号线和控制电路。 单位单元以行和列排列。 每个单元具有用于接收光并产生与该光相对应的电荷的光接收装置,用于累积由光接收装置产生的电荷的电荷累积部分,用于将电荷从 光接收装置到蓄电部,以及用于限制积蓄在蓄电部中的电荷的充电限制装置。 垂直信号线分别沿着单位单元的列延伸,每个用于接收与相关列的任何单位单元的电荷累积部分中累积的电荷相对应的电数据项。 控制电路控制每个单元电池,使得充电限制装置在第一时段期间限制由光接收装置产生的电荷,并通过传送装置传送到电荷累积部分。 在第一时间段之后的第二时段期间由光接收装置产生的电荷通过传送装置传送到电荷累积部分的电荷被加到累积在电荷累积部分中的电荷中。
    • 129. 发明授权
    • MOS-type solid-state imaging apparatus
    • MOS型固态成像装置
    • US06795121B2
    • 2004-09-21
    • US09733917
    • 2000-12-12
    • Yoshiyuki MatsunagaShinji OhsawaNobuo NakamuraHirofumi YamashitaHiroki Miura
    • Yoshiyuki MatsunagaShinji OhsawaNobuo NakamuraHirofumi YamashitaHiroki Miura
    • H04N5335
    • H04N5/3658H01L27/14609H01L27/14643H04N5/3575H04N5/365H04N5/374H04N5/3745H04N5/378
    • An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
    • MOS型固态成像装置包括:通过二维排列在半导体衬底上作为光电转换部分的单位单元形成的成像区域,沿着成像区域的行方向布置的多个垂直地址线,以选择行 要被寻址的单位单元,沿着成像区域的列方向布置的多条垂直信号线,以从每列中的单位单元读出信号;多个负载晶体管,每个连接到每个垂直信号的一端 线,以及多个水平选择晶体管,每个连接到每个垂直信号线的另一端。 在该装置中,每个单位单元包括用作光电转换部分的光电二极管,具有栅极的放大晶体管,来自光电二极管的输出端分别连接到垂直信号线和垂直地址的源极和漏极 连接在放大晶体管的栅极和垂直地址线之间的地址电容器,以及与地址电容器并联连接的复位晶体管。
    • 130. 发明授权
    • MOS-type solid-state imaging apparatus
    • MOS型固态成像装置
    • US06300978B1
    • 2001-10-09
    • US09022038
    • 1998-02-11
    • Yoshiyuki MatsunagaShinji OhsawaNobuo NakamuraHirofumi YamashitaHiroki Miura
    • Yoshiyuki MatsunagaShinji OhsawaNobuo NakamuraHirofumi YamashitaHiroki Miura
    • H04N5217
    • H04N5/3658H01L27/14643H04N5/3745H04N5/378
    • An MOS-type solid-state imaging apparatus includes unit cells arranged in a two-dimensional matrix, each unit cell being constituted by a photodiode, an amplification transistor having a gate to which an output from the photodiode is input, a vertical selection transistor connected in series with the amplification transistor, and a reset transistor connected between the drain and gate of the amplification transistor to discharge the signal from the photodiode, a plurality of vertical address lines connected to the gates of the vertical selection transistors and arranged in a row direction, a vertical address circuit for driving the vertical address lines, a plurality of vertical signal lines arranged in a column direction in which currents are read out from the amplification transistors, a plurality of load transistors each connected to one end of a corresponding one of the vertical signal lines, a plurality of horizontal selection transistors each connected to the other end of a corresponding one of the vertical signal lines, a horizontal address circuit for sequentially supplying selection pulse signals to the gates of the horizontal selection transistors, and a horizontal signal line for reading out signal currents from the vertical signal lines through the horizontal selection transistors.
    • MOS型固态成像装置包括以二维矩阵布置的单位单元,每个单位单元由光电二极管构成,具有栅极的放大晶体管,输入来自光电二极管的输出端,垂直选择晶体管连接 与放大晶体管串联的复位晶体管,以及连接在放大晶体管的漏极和栅极之间以将来自光电二极管的信号放电的复位晶体管,连接到垂直选择晶体管的栅极并沿行方向布置的多个垂直地址线 ,用于驱动垂直地址线的垂直地址电路,沿着从放大晶体管读出电流的列方向排列的多个垂直信号线,多个负载晶体管,每个负载晶体管连接到相应的一个 垂直信号线,多个水平选择晶体管,每个连接到相应的另一端 在水平选择晶体管的栅极之间顺序地提供选择脉冲信号的水平地址电路和用于通过水平选择晶体管从垂直信号线读出信号电平的水平信号线。