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    • 122. 发明授权
    • Frequency interpolating device for interpolating frequency component of signal and frequency interpolating method
    • 用于内插信号频率分量的频率插值装置和频率插值方法
    • US06879265B2
    • 2005-04-12
    • US10332850
    • 2001-06-27
    • Yasushi Sato
    • Yasushi Sato
    • G10L19/00G10L13/00G10L19/02H03M7/30H04B1/66H03M7/00
    • G10L19/0208H04B1/667
    • A frequency interpolating device for restoring an audio signal compressed at high ratio while keeping the high sound quality. An input digital signal to be subjected to frequency interpolation is converted to a spectrum signal representing the spectrum of the time-series signal by an analyzer. A spectrum analyzing section specifies, as an interpolating band, a deletion band not containing any spectrum among the bands defined by dividing the spectrum of the signal. A frequency interpolating section deduces the envelope of a digital signal and scales the spectrum of the spectrum distribution in the interpolating band specified by the spectrum analyzing section so that the spectrum matches with the function of the envelope and performs addition. The past spectra used for the scaling and addition are read out of a spectrum storage section. A synthesizer converts back the signal having the spectrum after the addition to the time-series signal. Thus, an audio signal compressed at high ratio by thinning of frequency components can be restored while keeping the high quality.
    • 一种用于恢复以高比例压缩的音频信号同时保持高音质的频率内插装置。 要进行频率插值的输入数字信号被分析器转换成表示时间序列信号的频谱的频谱信号。 频谱分析部将通过对信号的频谱进行除法而定义的频带之中的频谱不包含任何频谱的内插频带作为内插频带。 频率内插部分推断出数字信号的包络,并且对由频谱分析部分指定的内插频带中的频谱分布的频谱进行缩放,使得频谱与包络的功能匹配并执行相加。 用于缩放和添加的过去光谱从光谱存储部分读出。 合成器将添加后的具有频谱的信号转换成时间序列信号。 因此,可以在保持高质量的同时恢复通过频率分量的薄化以高比率压缩的音频信号。
    • 124. 发明授权
    • Method and apparatus using a gas concentration sensor for accurately controlling an air fuel ratio in an internal combustion engine
    • 使用气体浓度传感器来精确地控制内燃机的空燃比的方法和装置
    • US06568240B1
    • 2003-05-27
    • US09480661
    • 2000-01-11
    • Yoshikuni SatoNoboru IshidaHideki IshikawaTakafumi OshimaYasushi Sato
    • Yoshikuni SatoNoboru IshidaHideki IshikawaTakafumi OshimaYasushi Sato
    • G01N2726
    • F02D41/1459F02D41/0042F02D41/0045F02D41/144F02D41/2441F02D41/2474F02D2200/0614G01N2291/02809
    • The present invention provides a method and apparatus using a gas concentration sensor for accurately controlling an air fuel ratio in an internal combustion engine, featuring in that before the fuel-vaporized gas purged from the canister enters into the intake manifold whereat the sensor detects the gas concentration of the purged gas, the sensor is adjusted so as to adjust a zero point (or zero output level) of the sensor output. In step 100 of FIG. 7, a judgment is made as to whether the flow rate of air reaches a predetermined level. In step 110, processing for zero-point correction of the gas concentration sensor is performed. Specifically, in a state in which the purge valve 17 is closed, concentration of purge gas is measured by use of the gas concentration sensor 4, and a sensor output S1 at that time is obtained. Subsequently, the sensor output S1 is compared with a correct sensor output S0 in order to obtain a difference &Dgr;S therebetween. Accordingly, during subsequent gas concentration measurement, a value S3 obtained through subtraction of the difference &Dgr;S from an obtained sensor output S2 is used as a correct sensor output. In step 120, a supply amount of purge gas, i.e., a concentration of the purge gas to be supplied is obtained. In subsequent step 130, the purge valve 17 is driven in order to supply purge gas to the intake pipe 2 in a required amount (A%).
    • 本发明提供了一种使用气体浓度传感器来精确地控制内燃机中的空燃比的方法和装置,其特征在于在从罐排出的燃料汽化气体进入进气歧管之前,传感器检测到气体 净化气体的浓度,调节传感器以调节传感器输出的零点(或零输出水平)。 在图1的步骤100中 如图7所示,判断空气流量是否达到预定水平。 在步骤110中,进行气体浓度传感器的零点校正处理。 具体地说,在关闭吹扫阀17的状态下,利用气体浓度传感器4测定净化气体的浓度,得到此时的传感器输出S1。 随后,将传感器输出S1与正确的传感器输出S0进行比较,以获得它们之间的差值DELTAS。 因此,在后续的气体浓度测量中,使用通过从获得的传感器输出S2中减去差值DELTAS获得的值S3作为正确的传感器输出。 在步骤120中,获得净化气体的供给量,即所供给的净化气体的浓度。 在随后的步骤130中,驱动排气阀17,以便以所需量(A%)向进气管2供应净化气体。
    • 125. 发明授权
    • Polarizer and a production method thereof
    • 偏振器及其制造方法
    • US06252709B1
    • 2001-06-26
    • US08939288
    • 1997-09-29
    • Yasushi Sato
    • Yasushi Sato
    • G02B2728
    • G02B5/3058
    • A polarizing layer H1, comprising a large number of particles having morphological anisotropy dispersed in a dielectric, is sandwiched between major surfaces of two dielectric substrates 1, 2 having transparency, and the two dielectric substrates are jointed. The jointed two dielectric substrates are given thermal plastic deformation in a certain direction to give the metal particles of a laminated layer 7 morphological anisotropy and orientation to turn it into the polarizing layer H1.
    • 包含大量具有分散在电介质中的形态各向异性的颗粒的偏光层H1被夹在具有透明性的两个电介质基板1,2的主表面之间,并且两个电介质基板接合。 接合的两个电介质基板在一定方向上被赋予热塑性变形,以使得层压层7的金属颗粒具有形态各向异性和取向以将其转变成偏振层H1。
    • 128. 发明授权
    • Method of evaluating a tunnel insulating film
    • 评估隧道绝缘膜的方法
    • US6054351A
    • 2000-04-25
    • US820720
    • 1997-03-18
    • Yasushi SatoMasao Tsujimoto
    • Yasushi SatoMasao Tsujimoto
    • H01L21/66H01L21/8247H01L23/544H01L27/115H01L29/788H01L29/792
    • H01L27/11521H01L22/14H01L22/34H01L27/11524H01L2924/0002
    • The present invention provides a method of evaluating a tunnel insulating film of a first MOS FET having a semiconductor substrate, a control gate, a floating gate and a tunnel insulating film formed between the semiconductor substrate and the floating gate which is injected with electrons from the semiconductor substrate by applying a direct current voltage to the control gate. The method is achieved by preparing a second MOS FET having a tunnel insulating film formed on a semiconductor substrate in the same batch process of forming the tunnel insulating film in the first MOS FET, measuring a subthreshold swing of the second MOS FET, applying a direct current electric field to the tunnel insulating film in the second MOS FET for a predetermined time, remeasuring the subthreshold swing of the second MOS FET, and evaluating the tunnel insulating film in the first MOS FET by using a change of the subthreshold swing before and after the applying step.
    • 本发明提供一种评估第一MOS FET的隧道绝缘膜的方法,该第一MOS FET具有半导体衬底,控制栅极,浮动栅极和隧道绝缘膜,该半导体衬底,浮栅和隧道绝缘膜形成在半导体衬底和浮置栅极之间, 半导体衬底,通过向控制栅极施加直流电压。 该方法是通过在第一MOS FET中形成隧道绝缘膜的相同批处理中制备具有形成在半导体衬底上的隧道绝缘膜的第二MOS FET,测量第二MOS FET的亚阈值摆幅,施加直接 电流电场到第二MOS FET中的隧道绝缘膜预定时间,重新测量第二MOS FET的亚阈值摆动,并且通过使用前后的亚阈值摆动的变化来评估第一MOS FET中的隧道绝缘膜 申请步骤。