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121. 发明授权

US06211003B1 Semiconductor integrated circuit device and process for manufacturing the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US06211003B1
公开(公告)日：2001-04-03
申请号：US09270685
申请日：1999-03-16
申请人： Yasuhiro Taniguchi , Shoji Shukuri , Kenichi Kuroda , Shuji Ikeda , Takashi Hashimoto
发明人： Yasuhiro Taniguchi , Shoji Shukuri , Kenichi Kuroda , Shuji Ikeda , Takashi Hashimoto
IPC分类号： H01L218238
CPC分类号： H01L27/11526 , H01L21/76229 , H01L21/76237 , H01L21/823892 , H01L27/0214 , H01L27/10894 , H01L27/10897 , H01L27/11546
摘要： A photoresist pattern through which a first well forming region and a second well forming region are exposed is formed over a semiconductor substrate, used as the mask to dope the semiconductor substrate with an impurity thereby to form buried n-wells, and further used as the mask to dope the same with an impurity thereby to form shallow p-wells in a self-alignment manner over the buried n-wells. Subsequently, the photoresist pattern is removed. After this, a photoresist pattern through which the outer peripheral region of the first well forming region and a third well forming region are exposed is formed over the major surface of the semiconductor substrate, and used as the mask to dope the semiconductor substrate with an impurity thereby to form shallow p-wells.
摘要翻译：在半导体衬底上形成第一阱形成区域和第二阱形成区域暴露的光致抗蚀剂图案，用作掩模以掺杂杂质从而形成掩埋的n阱，并进一步用作掩模用杂质掺杂，从而在掩埋的n阱上以自对准的方式形成浅的p阱。随后，去除光致抗蚀剂图案。之后，在半导体衬底的主表面上形成有暴露第一阱形成区域和第三阱形成区域的外周区域的光致抗蚀剂图案，并用作掩模以掺杂杂质的半导体衬底从而形成浅的p阱。

122. 发明授权

US6164267A Fuel feeder 有权
标题翻译：燃油机
公开(公告)号：US6164267A
公开(公告)日：2000-12-26
申请号：US142223
申请日：1998-09-03
申请人： Yoshihiro Okada , Koji Takahashi , Takashi Hashimoto , Taiki Aoyama
发明人： Yoshihiro Okada , Koji Takahashi , Takashi Hashimoto , Taiki Aoyama
IPC分类号： F02B77/00 , B01D27/08 , B01D29/15 , B01D35/02 , B01D35/027 , F02M37/04 , F02M37/10 , F02M37/22
CPC分类号： F02M37/22 , B01D29/15 , B01D29/21 , B01D29/56 , B01D35/0273 , B01D35/26 , B01D2201/50 , F02M37/10 , F02M2037/228
摘要： A fuel filter 10, constructing a supply unit 8, comprises a filter case 11 having an electric conductivity and a filter element 14. The filter case 11 is formed with an inside wall portion 11A and an outside wall portion 11B into a U shape in lateral cross section, so as to enlarge a contact area contacting with fuel in a fuel tank. The fuel discharged from the fuel pump 9 flows into a fluid chamber 15 of the fuel filter 10, and then be supplied from a fuel supply conduit 20 through a fuel flow passageway 12A to the outside. At this time, static electricity charged in the filter case 11 is discharged through its outer peripheral surface into the surrounding fuel having a slight electric conductivity.
摘要翻译： PCT No.PCT / JP98 / 00504 Sec。 371日期：1998年9月3日 102（e）1998年9月3日日期PCT提交1998年2月6日PCT公布。第WO98 / 35157号公报日期1998年08月13日A构成供给单元8的燃料过滤器10包括具有导电性的过滤器壳体11和过滤元件14.过滤器壳体11形成有内壁部11A和外壁部11B， U形横截面，以便扩大与燃料箱中的燃料接触的接触面积。从燃料泵9排出的燃料流入燃料过滤器10的流体室15，然后从燃料供给管20通过燃料流路12A供给到外部。此时，充电在过滤器壳体11中的静电通过其外周面排出到具有轻微导电性的周围燃料中。

123. 发明授权

US6141845A Method of producing electronic component 有权
标题翻译：电子元器件生产方法
公开(公告)号：US6141845A
公开(公告)日：2000-11-07
申请号：US132424
申请日：1998-08-11
申请人： Motoyuki Okeshi , Ken Taniguchi , Takashi Hashimoto , Makoto Irie , Hiroyuki Kawakami , Choichiro Fujii , Michinobu Maesaka , Hidemasa Iwami , Takashi Iwamoto
发明人： Motoyuki Okeshi , Ken Taniguchi , Takashi Hashimoto , Makoto Irie , Hiroyuki Kawakami , Choichiro Fujii , Michinobu Maesaka , Hidemasa Iwami , Takashi Iwamoto
IPC分类号： H01L41/047 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/17 , H03H9/56 , H03H9/58 , H04R17/00
CPC分类号： H03H9/58 , H01L41/0475 , H03H9/0514 , H03H9/1014 , H03H9/176 , H03H9/56 , H03H9/562 , H03H9/581 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/48465 , H01L2224/4848 , Y10T29/42 , Y10T29/4921
摘要： An electronic component has a substantially reduced size and is adapted to be produced at low costs without variation in superior quality of the component because of the ease of achieving electrical connection between a piezoelectric element and a electrode pattern on a substrate supporting the piezoelectric element. The piezoelectric element has a lower electrode formed on the lower surface thereof and an upper electrode formed on the upper surface thereof. The piezoelectric element is fixed to the substrate such that the lower electrode is bonded to an electrode provided on the substrate by a conductive adhesive. A conductive wire is fixed to the upper electrode of the piezoelectric element. A metallic cap is bonded to the substrate so as to cover and seal the piezoelectric element on the substrate. The cap is contacted at its inner surface by the wire, whereby an electrical connection is achieved between the cap and the upper electrode of the piezoelectric element. Input and output lead terminals are connected to the electrodes on the substrate, while a grounding lead terminal is connected to the cap.
摘要翻译：电子部件具有基本上减小的尺寸，并且适于以低成本生产，而不会由于在支撑压电元件的基板上实现压电元件和电极图案之间的电连接而容易地实现元件的优良品质。压电元件具有形成在其下表面上的下电极和形成在其上表面上的上电极。压电元件固定到基板上，使得下电极通过导电粘合剂结合到设置在基板上的电极。导电线固定在压电元件的上电极上。将金属盖结合到基板上，以覆盖并密封基板上的压电元件。盖通过导线在其内表面处接触，从而在盖和压电元件的上电极之间实现电连接。输入和输出引线端子连接到基板上的电极，而接地引线端子连接到盖子。

124. 发明授权

US6129961A Polyester resin and production method thereof 失效
标题翻译：聚酯树脂及其制备方法
公开(公告)号：US6129961A
公开(公告)日：2000-10-10
申请号：US385672
申请日：1999-08-27
申请人： Hirotoshi Sonoda , Atsushi Hara , Mitsuhiro Harada , Yoshio Araki , Shouji Kikuchi , Takashi Hashimoto , Keisuke Suzuki , Hitoshi Furusaki , Kazuki Yamauchi , Yoshinao Matsui , Osamu Kimura , Yoshitaka Eto
发明人： Hirotoshi Sonoda , Atsushi Hara , Mitsuhiro Harada , Yoshio Araki , Shouji Kikuchi , Takashi Hashimoto , Keisuke Suzuki , Hitoshi Furusaki , Kazuki Yamauchi , Yoshinao Matsui , Osamu Kimura , Yoshitaka Eto
IPC分类号： C08G63/91 , C08G63/90 , C08L67/02 , B29D22/00 , C08F6/00
CPC分类号： C08G63/90 , C08L67/02 , Y10T428/1352 , Y10T428/1397
摘要： A polyester resin comprising a polyester resin chip (A) and a polyester resin fine particle (B) which has the same composition as the (A) and which passes through a 10.5 mesh screen in a proportion of 0.1-300 ppm, wherein a cyclic trimer increases in a proportion of not more than 0.30 wt % upon melting at a temperature of 290.degree. C. for 60 minutes; a polyester resin characterized in that a cyclic trimer increases in a proportion of not more than 0.30 wt % upon melting at a temperature of 290.degree. C. for 60 minutes, and the contents of Na, Ca, Mg and/or Si in the polyeser resin is 0.001-5 ppm and the total of these contents is not more than 10 ppm; and production methods thereof. According to the polyester resin of the present invention, mold such as stretch blow mold, heat setting mold, vacuum forming mold and the like are less stained in sheet forming, bottle forming and the like, so that forming can be continued for a long time to easily produce a multitude of formed articles with superior transparency. As a result, hollow articles having superior transparency and heat resistance of the finish part can be obtained.
摘要翻译：一种聚酯树脂，其包含与（A）成分相同的聚酯树脂片（A）和聚酯树脂微粒（B），并且以0.1-300ppm的比例通过10.5目筛，其中环状在290℃温度下熔融60分钟时，三聚体的比例不超过0.30重量％; 聚酯树脂，其特征在于在290℃温度下熔融60分钟时，环状三聚体的比例不超过0.30重量％，聚醚类中的Na，Ca，Mg和/或Si的含量树脂为0.001-5ppm，总含量不超过10ppm; 及其制造方法。根据本发明的聚酯树脂，拉伸吹塑模具，热定形模具，真空成型模具等模具在片材成型，瓶形成等方面的染色较少，从而能够长时间地进行成型容易地生产出具有优异透明度的大量成形制品。结果，可以获得具有优异的精加工部件的透明性和耐热性的中空制品。

125. 发明授权

US6121086A Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件和半导体集成电路器件的制造方法
公开(公告)号：US6121086A
公开(公告)日：2000-09-19
申请号：US330991
申请日：1999-06-14
申请人： Kenichi Kuroda , Takashi Hashimoto , Shoji Shukuri
发明人： Kenichi Kuroda , Takashi Hashimoto , Shoji Shukuri
IPC分类号： H01L21/3205 , H01L21/8242 , H01L21/8246 , H01L23/52 , H01L27/105 , H01L27/108
CPC分类号： H01L27/10885 , H01L27/10852 , H01L27/10894 , H01L2924/0002
摘要： In a DRAM, a plurality of memory cells each consisting of a memory cell selection transistor Qs and an information storage capacity element connected thereto in series are provided on a semiconductor substrate 1. An active region of the memory cell selection MISFET Qs is formed to have an isolated rectangular plan view. A part of the bit line BL extends in a direction crossing the extending direction thereof, and the extending part two-dimensionally overlaps a semiconductor region formed in the active region and is electrically connected thereto. In the DRAM having this structure, the bit line BL is formed of conductive films 16b1 and 16b2 embedded in the contact hole 14b for the bit line and in the wiring groove 15a for the bit line.
摘要翻译：在DRAM中，在半导体基板1上设置有由存储单元选择用晶体管Qs和与其连接的信息存储电容元件构成的多个存储单元。存储单元选择MISFET Qs的有源区域形成为具有孤立的矩形平面图。位线BL的一部分在与其延伸方向相交的方向上延伸，并且延伸部与形成在有源区中的半导体区域二维重叠并与其电连接。在具有这种结构的DRAM中，位线BL由嵌入在位线的接触孔14b中的导电膜16b1和16b2以及位线的布线槽15a中形成。

126. 发明授权

US6104056A Semiconductor element and semiconductor memory device using the same 失效
标题翻译：半导体元件和使用其的半导体存储器件
公开(公告)号：US6104056A
公开(公告)日：2000-08-15
申请号：US126437
申请日：1998-07-30
申请人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
发明人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
IPC分类号： H01L21/8247 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/04 , G11C16/28 , H01L21/28 , H01L21/336 , H01L27/01 , H01L27/115 , H01L29/423 , H01L29/51 , H01L29/66 , H01L29/76 , H01L29/788 , H01L29/792 , H01L29/94 , H01L31/036 , H01L31/062 , H01L31/112 , H01L31/113 , H01L21/119
CPC分类号： B82Y10/00 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/0466 , G11C16/10 , G11C16/28 , H01L21/28273 , H01L21/8221 , H01L27/0688 , H01L27/105 , H01L27/115 , H01L27/11526 , H01L27/11546 , H01L27/11551 , H01L29/42328 , H01L29/513 , H01L29/66825 , H01L29/7613 , H01L29/7888 , G11C2216/06 , G11C2216/08 , H01L27/1203 , H01L29/785
摘要： A field-effect semiconductor element implemented with a reduced number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature. In accordance with one embodiment, a carrier confinement region, isolated from a channel and a gate of the semiconductor FET element, is provided to operate as a storage node for trapping the carrier or carriers.
摘要翻译：一种场效应半导体元件，其具有减少的元件数量和减少的面积，并且能够自身存储数据，而不需要在低温下进行冷却;以及采用该半导体元件的存储器件。栅极沟道电容被设置得如此小，以致捕获捕获一个电子或空穴是否可以根据半导体FET元件的电流的变化来明确且明显地被检测。通过检测通过在陷阱中捕获电子或空穴而导致的半导体元件的阈值电压的变化，可以在室温下实现数据存储。根据一个实施例，提供了从沟道分离的载流子限制区域和半导体FET元件的栅极，以用作捕获载体或载流子的存储节点。

127. 发明授权

US6058911A Fuel chamber for automotive vehicle 失效
标题翻译：汽车燃油箱
公开(公告)号：US6058911A
公开(公告)日：2000-05-09
申请号：US55266
申请日：1998-04-06
申请人： Takashi Hashimoto , Masami Honma , Toshihide Kimisawa
发明人： Takashi Hashimoto , Masami Honma , Toshihide Kimisawa
IPC分类号： B60K15/077 , F02M37/04
CPC分类号： B60K15/077 , B60K2015/03105 , B60K2015/03111 , B60K2015/03236
摘要： A fuel chamber provided in a fuel tank for an automotive vehicle in order to effectively prevent a temperature of a fuel within a fuel tank from ascending not so as to generate a vapor due to a fuel returned to the fuel chamber end from an engine is mainly disclosed. In a typical fuel chamber, a fuel chamber main body, a jet nozzle member having a front end portion inserted into a hole portion communicating an inner portion with an outer portion of the fuel chamber main body, a cover body forming a pressure reduction chamber decompressed in response to that the jet nozzle member injects a return fuel to the fuel chamber main body through the hole portion, and a tubular circulating member circulating a fuel within the fuel chamber main body are provided. The fuel stored within the fuel tank is introduced into the fuel chamber main body and the fuel within the fuel chamber main body is circulated in response to that the jet nozzle member injects the return fuel into the fuel chamber main body.
摘要翻译：燃料室设置在用于机动车辆的燃料箱中，以便有效地防止燃料箱内的燃料的温度升高而不是由于从发动机返回到燃料室端的燃料产生蒸汽，主要是披露在典型的燃料室中，具有燃料室主体，喷射喷嘴构件，其具有插入到内部与燃料室主体的外部连通的孔部中的前端部，形成减压室的盖体，响应于喷射喷嘴构件通过孔部将返回燃料喷射到燃料室主体，并且设置使燃料室主体内的燃料循环的管状循环构件。存储在燃料箱内的燃料被引入燃料室主体中，并且燃料室主体内的燃料响应于喷射喷嘴构件将返回燃料喷射到燃料室主体而循环。

128. 发明授权

US5846869A Method of manufacturing semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US5846869A
公开(公告)日：1998-12-08
申请号：US685844
申请日：1996-07-24
申请人： Takashi Hashimoto , Hideo Miura , Toshiyuki Kikuchi , Toshiyuki Mine , Yoichi Tamaki , Takahiro Kumauchi
发明人： Takashi Hashimoto , Hideo Miura , Toshiyuki Kikuchi , Toshiyuki Mine , Yoichi Tamaki , Takahiro Kumauchi
IPC分类号： H01L29/73 , H01L21/205 , H01L21/306 , H01L21/331 , H01L21/8222 , H01L21/8249 , H01L27/06 , H01L29/165 , H01L29/732 , H01L29/737 , H01L21/301
CPC分类号： H01L21/02052 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/8222 , H01L29/66272 , H01L29/7375 , Y10S438/906
摘要： A method of manufacturing a bipolar transistor having an improved polysilicon emitter is disclosed. More specifically, hydrogen terminations or OH group terminations adhered (bonded) to an emitter-forming region are eliminated by a heat treatment in an inert gas atmosphere before forming emitter polysilicon. Subsequently, an amorphous silicon film for forming an emitter polysilicon is formed at a low temperature.
摘要翻译：公开了一种制造具有改进的多晶硅发射极的双极晶体管的方法。更具体地，在形成发射极多晶硅之前，通过在惰性气体气氛中的热处理来消除粘附（结合）到发射体形成区域的氢端基或OH基端基。随后，在低温下形成用于形成发射极多晶硅的非晶硅膜。

129. 发明授权

US5700705A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US5700705A
公开(公告)日：1997-12-23
申请号：US470452
申请日：1995-06-06
申请人： Satoshi Meguro , Kiyofumi Uchibori , Norio Suzuki , Makoto Motoyoshi , Atsuyoshi Koike , Toshiaki Yamanaka , Yoshio Sakai , Toru Kaga , Naotaka Hashimoto , Takashi Hashimoto , Shigeru Honjou , Osamu Minato
发明人： Satoshi Meguro , Kiyofumi Uchibori , Norio Suzuki , Makoto Motoyoshi , Atsuyoshi Koike , Toshiaki Yamanaka , Yoshio Sakai , Toru Kaga , Naotaka Hashimoto , Takashi Hashimoto , Shigeru Honjou , Osamu Minato
IPC分类号： H01L21/8244 , H01L27/11
CPC分类号： H01L27/1104 , H01L27/11 , H01L27/1108 , Y10S257/903 , Y10S257/904
摘要： The manufacture of a memory cell of the type employing a pair of cross-coupled CMOS inverters of a SRAM is disclosed in which the load MISFETs are stacked above the semiconductor substrate and over the drive MISFETs. The manufacture of each load MISFET consists of forming source, drain and channel regions within the same polycrystalline silicon film, and a gate electrode consisting of a different layer conductive film, such as a polycrystalline film, than that of the drive MISFETs. The manufacture of the memory cell having such a stacked arrangement, facilitates the patterning of the source (drain) region and gate electrode of each load MISFET thereof to have an overlapping relationship with each other so as to increase the effective capacitance associated with each of the memory cell storage nodes. The gate electrodes of both the drive and load MISFETs are formed of n-type or of n-type and p-type polycrystalline silicon films, respectively, and electrical connections are formed between the drain regions of the first and second p-channel load MISFETs with that of the drain regions of the first and second n-channel drive MISFETs through separate polycrystalline silicon films, respectively. Also, there are formed electrical connections between the polycrystalline silicon gate electrodes of the first and second load MISFETs with that of drain regions of the second and first drive MISFETs, through the poly-Si gate electrodes of the first and second drive MISFETs, in each memory cell of the SRAM, respectively, furthermore.
摘要翻译：公开了采用SRAM的一对交叉耦合CMOS反相器的类型的存储单元的制造，其中负载MISFET堆叠在半导体衬底上方和驱动MISFET上方。每个负载MISFET的制造包括在同一多晶硅膜内形成源极，漏极和沟道区域，以及由不同层导电膜（例如多晶膜）组成的栅电极，而不是驱动MISFET。具有这种堆叠布置的存储单元的制造有助于其每个负载MISFET的源极（漏极）区域和栅极电极的图案化，以使得彼此之间具有重叠关系，从而增加与每个负载MISFET相关联的有效电容存储单元存储节点。驱动和负载MISFET的栅电极分别由n型或n型和p型多晶硅膜形成，并且在第一和第二p沟道负载MISFET的漏极区之间形成电连接与第一和第二n沟道驱动MISFET的漏极区分别通过分离的多晶硅膜。此外，通过第一和第二驱动MISFET的多晶硅栅电极，在第一和第二负载MISFET的多晶硅栅电极与第二和第一驱动MISFET的漏极区域之间形成电连接此外，SRAM的存储单元分别。

130. 发明授权

US5600163A Semiconductor element and semiconductor memory device using the same 失效
标题翻译：半导体元件和使用其的半导体存储器件
公开(公告)号：US5600163A
公开(公告)日：1997-02-04
申请号：US291752
申请日：1994-08-16
申请人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
发明人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
IPC分类号： H01L21/8247 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/04 , G11C16/28 , H01L21/28 , H01L21/336 , H01L27/01 , H01L27/115 , H01L29/423 , H01L29/51 , H01L29/66 , H01L29/76 , H01L29/788 , H01L29/792 , H01L29/94 , H01L31/036 , H01L31/062 , H01L31/112 , H01L31/113
CPC分类号： B82Y10/00 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/0466 , G11C16/10 , G11C16/28 , H01L21/28273 , H01L21/8221 , H01L27/0688 , H01L27/105 , H01L27/115 , H01L27/11526 , H01L27/11546 , H01L27/11551 , H01L29/42328 , H01L29/513 , H01L29/66825 , H01L29/7613 , H01L29/7888 , G11C2216/06 , G11C2216/08 , H01L27/1203 , H01L29/785
摘要： A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.
摘要翻译：一种场效应半导体元件，其具有较少数量的元件和减小的面积，并能够自身存储数据，而不需要在低温下进行冷却;以及采用该半导体元件的存储器件。栅极沟道电容被设置得如此小，以致捕获捕获一个电子或空穴是否可以根据半导体FET元件的电流的变化来明确且明显地被检测。通过检测通过在陷阱中捕获电子或空穴而导致的半导体元件的阈值电压的变化，可以在室温下实现数据存储。

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