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    • 124. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US06472693B1
    • 2002-10-29
    • US09696963
    • 2000-10-27
    • Hideki TakahashiYoshifumi Tomomatsu
    • Hideki TakahashiYoshifumi Tomomatsu
    • H01L2974
    • H01L29/7455H01L29/7395
    • The present invention relates to a semiconductor device and a method of manufacturing the same, and particularly, an object of the present invention is to reduce an ON voltage while ensuring a wide operating area and sustaining a high breakdown voltage. To achieve this object, a semiconductor base body is divided into a first MOS region and a second MOS region. In the first MOS region, a p base layer, an n+ emitter layer and a p+ layer are provided in an upper main surface of the semiconductor base body. In the second MOS region, a p base layer, an n layer and a p+ layer are provided. When a positive gate voltage is applied to a gate electrode in order to turn on the device, since the p base layer and the emitter electrode are cut off, a main current does not flow in the p base layer. Therefore, a hole accumulation effect is enhanced and the ON voltage is reduced. When a negative gate voltage is applied in order to turn off the device, since a channel region is inverted, the main current constituted of residual carriers flows in both p base layers. Therefore, a wide operating area is ensured. Since no n layer surrounding the p base layer exists, unlike in a CSTBT, there is no problem of degradation in breakdown voltage.
    • 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法,特别地,本发明的目的是在确保大的工作面积和维持高的击穿电压的同时降低导通电压。 为了实现该目的,半导体基体分为第一MOS区和第二MOS区。 在第一MOS区中,在半导体基体的上主表面上设置有p基极层,n +发射极层和p +层。 在第二MOS区中,设置p基层,n层和p +层。 当正栅极电压施加到栅电极以导通器件时,由于p基极层和发射极被切断,所以在p基极层中不流过主电流。 因此,增加了空穴积聚效果,并且导通电压降低。 当施加负栅极电压以关断器件时,由于沟道区域被反转,所以由残留载流子构成的主电流在两个p个基极层中流动。 因此,确保了广泛的操作区域。 由于不存在围绕p基层的n层,与CSTBT不同,不存在击穿电压劣化的问题。
    • 129. 发明授权
    • Thermoplastic elastomer composition and composite molded product
    • 热塑性弹性体组合物和复合模塑制品
    • US5910540A
    • 1999-06-08
    • US734600
    • 1996-10-22
    • Hideki Takahashi
    • Hideki Takahashi
    • B32B7/02B29C45/16B32B25/08B32B27/30B32B27/32B32B27/34B32B27/36C08L53/00C08L53/02C08L67/00C08L67/02C08L75/00C08L75/04C08L77/00C08L77/06
    • C08L67/025C08L53/025C08L77/00C08L77/06
    • The present invention relates to a thermoplastic elastomer composition comprising the following components (A) and (B), and to a composite molded product comprising a resin layer and an elastomer layer containing said composition as the base material. Component (A): 5 to 95% by weight of a styrene type block copolymer or a hydrogenated product thereof, comprising block (a) which is made of a polymer of styrene or a derivative thereof, and block (b) which is made of an isoprene homopolymer or a copolymer of isoprene and butadiene, wherein the total amount of the 1,2-bond and the 3,4-bond in the isoprene polymer part in block (b) is not less than 40% of the total isoprene bond unit. Component (B): 95 to 5% by weight of one or more thermoplastic elastomers which are selected from the group consisting of polyester type thermoplastic elastomers, polyamide type thermoplastic elastomers, and polyurethane type thermoplastic elastomers. The composition of the present invention exhibits excellent heat fusion properties to both an olefin type resin and a nonolefin type resin, and gives a composite molded product having a high peeling strength, comprising said resin and said elastomer.
    • 本发明涉及包含以下组分(A)和(B)的热塑性弹性体组合物,以及包含树脂层和含有所述组合物作为基材的弹性体层的复合模制产品。 组分(A):5至95重量%的苯乙烯型嵌段共聚物或其氢化产物,其包含由苯乙烯或其衍生物的聚合物制成的嵌段(a)和由(B)由 异戊二烯均聚物或异戊二烯与丁二烯的共聚物,其中嵌段(b)中的异戊二烯聚合物部分中的1,2-键和3,4-键的总量不小于总异戊二烯键的40% 单元。 组分(B):95至5重量%的选自聚酯型热塑性弹性体,聚酰胺型热塑性弹性体和聚氨酯类热塑性弹性体的一种或多种热塑性弹性体。 本发明的组合物对烯烃类树脂和非烯烃类树脂都表现出优异的热熔融性,并且得到包含所述树脂和所述弹性体的具有高剥离强度的复合模塑产品。