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121. 发明专利

SG10201405469WA UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF 未知
公开(公告)号：SG10201405469WA
公开(公告)日：2014-10-30
申请号：SG10201405469W
申请日：2010-09-27
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , KALYANARAMAN RAJARAMANAN , MANI SATHYANARAYANAN , BHATTACHARYYA GUATAM
摘要： An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.

122. 发明专利

SG10201401262UA MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER 未知
公开(公告)号：SG10201401262UA
公开(公告)日：2014-08-28
申请号：SG10201401262U
申请日：2010-04-06
申请人： LAM RES CORP
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , KOSHIISHI AKIRA , FISCHER ANDREAS

123. 发明专利

SG11201402447TA PLASMA PROCESSING CHAMBER WITH FLEXIBLE SYMMETRIC RF RETURN STRAP 未知
公开(公告)号：SG11201402447TA
公开(公告)日：2014-06-27
申请号：SG11201402447T
申请日：2012-11-21
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER
IPC分类号： H01L21/3065

124. 发明专利

SG188137A1 METHODS AND APPARATUS FOR CHANGING AREA RATIO IN A PLASMA PROCESSING SYSTEM 未知
公开(公告)号：SG188137A1
公开(公告)日：2013-03-28
申请号：SG2013010178
申请日：2009-02-06
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER
摘要： METHODS AND APPARATUS FOR CHANGING AREA RATIO IN A PLASMA PROCESSING SYSTEMA plasma processing system having an upper electrode and a lower electrode. The upper electrode and lower electrode form two regions with different gaps. By moving one or both of the upper electrode and the lower electrode, it is possible to vary the ratio area of RF coupling depending on whether plasma is permitted to sustain in the first region or in both the first region and the second region.FIG 5

125. 发明专利

AT552923T 未知
公开(公告)号：AT552923T
公开(公告)日：2012-04-15
申请号：AT07751025
申请日：2007-02-15
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER
IPC分类号： B08B6/00 , C25F1/00 , C25F3/30 , C25F5/00
摘要： Plasma processing chamber having a bottom electrode assembly is disclosed. The assembly has an inner bottom electrode for supporting a substrate and an outer bottom electrode disposed outside of the inner bottom electrode. The outer bottom electrode defines a region for chamber cleaning, and the outer bottom electrode includes a conductive ring and an inductive coil placed under the conductive ring. Further included is a dielectric material disposed between the inner bottom electrode and the outer bottom electrode, and the dielectric material separates the inner bottom electrode from the outer bottom electrode. A switch is provided for connecting radio frequency (RF) power to either the inner bottom electrode or the outer bottom electrode. The chamber also includes a top electrode assembly with a top electrode. The top electrode is disposed above both the inner and outer bottom electrodes.

126. 发明专利

SG178371A1 UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF 未知
公开(公告)号：SG178371A1
公开(公告)日：2012-03-29
申请号：SG2012009619
申请日：2010-09-27
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , KALYANARAMAN RAJARAMANAN , MANI SATHYANARAYANAN , BHATTACHARYYA GUATAM
摘要： An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.

127. 发明专利

SG178287A1 A LOCAL PLASMA CONFINEMENT AND PRESSURE CONTROL ARRANGEMENT AND METHODS THEREOF 未知
公开(公告)号：SG178287A1
公开(公告)日：2012-03-29
申请号：SG2012008306
申请日：2010-08-31
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , KELLOG MIKE , KADKODYAN BABAK , BAILEY ANDREW
摘要： An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.

128. 发明专利

SG177922A1 PLASMA-ENHANCED SUBSTRATE PROCESSING METHOD AND APPARATUS 未知
公开(公告)号：SG177922A1
公开(公告)日：2012-02-28
申请号：SG2011096096
申请日：2007-12-14
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , HUDSON ERIC , MARAKHTANOV ALEXEI , FISCHER ANDREAS
摘要： PLASMA-ENHANCED SUBSTRATE PROCESSING METHOD AND APPARATUS AbstractA method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.Figure: 3

129. 发明专利

SG177223A1 METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE USING PLASMA 未知
公开(公告)号：SG177223A1
公开(公告)日：2012-01-30
申请号：SG2011095247
申请日：2007-12-14
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , ERIC HUDSON , MARAKHTANOV ALEXEI , FISCHER ANDREAS
摘要： METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE USING PLASMAMethods and arrangements for controlling the electron loss to the upper electrode, including techniques and apparatus for biasing the upper electrode more negatively to allow charged species to be trapped within the plasma chamber for a longer period of time, thereby increasing the plasma density. The induced RF signal on the upper electrode is rectified, thus biasing the upper electrode more negatively. The rectified RF signal may also be amplified, thus driving the upper electrode even more negatively, if desired.Figure: 3

130. 发明专利

DE60036291T2 未知
公开(公告)号：DE60036291T2
公开(公告)日：2008-05-29
申请号：DE60036291
申请日：2000-06-12
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , HAO FANGLI , LENZ ERIC
IPC分类号： H01J37/32 , H05H1/46 , C23C16/44 , C23C16/455 , H01L21/302
摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

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