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121. 发明授权

US08294245B2 GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture 有权
标题翻译： GaN单晶质量及其制造方法，半导体器件及其制造方法
公开(公告)号：US08294245B2
公开(公告)日：2012-10-23
申请号：US12797617
申请日：2010-06-10
申请人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
发明人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , C30B25/00 , C30B29/406 , H01L21/02008 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205
摘要： Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.
摘要翻译：提供GaN单晶体，其制造方法以及其制造的半导体器件及其制造方法，由此当生长GaN单晶质量时，并且当将生长的GaN单晶体块加工成衬底或类似形式，以及当至少单层GaN半导体层以衬底形式形成在单晶GaN块上以制造半导体器件时，将裂纹控制到最小。 GaN单晶块10具有纤锌矿结晶结构，在30℃下，其弹性常数C11为348GPa至365GPa，其弹性常数C13为90GPa至98GPa; 或者其弹性常数C11为352GPa至362GPa。

122. 发明申请

US20100326876A1 Method of Storing GaN Substrate, Stored Substrate, and Semiconductor Device and Method of Its Manufacture 有权
标题翻译：存储GaN衬底，存储衬底和半导体器件的方法及其制造方法
公开(公告)号：US20100326876A1
公开(公告)日：2010-12-30
申请号：US12877086
申请日：2010-09-07
申请人： Hideyuki Ijiri , Seiji Nakahata
发明人： Hideyuki Ijiri , Seiji Nakahata
IPC分类号： B65D90/00
CPC分类号： H01L33/0075 , C30B29/406 , C30B33/00
摘要： Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3 or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 μm, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the direction, and from 0° to 1° in the direction.
摘要翻译：提供一种存储可以制造具有良好特性的半导体器件的GaN衬底的方法，存储的衬底以及半导体器件以及制造半导体器件的方法。在GaN衬底存储方法中，将GaN衬底（1）储存在氧气浓度为18体积％的气氛中。％以下，和/或12g / m 3以下的水蒸气浓度。通过存储方法储存的GaN衬底上的第一主面的表面粗糙度Ra和第二主面的粗糙度Ra分别为不大于20nm且不大于20μm。此外，使GaN基板使得主面与（0001）面在<100°方向上形成从0.05°至2°的偏轴角度，并且在<0001方向上从0°到1°， 11 20>方向。

123. 发明申请

US20090289261A1 GALLIUM NITRIDE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SAME 审中-公开
标题翻译：氮化铬晶体基板及其制造方法
公开(公告)号：US20090289261A1
公开(公告)日：2009-11-26
申请号：US12477642
申请日：2009-06-03
申请人： Fumitaka SATO , Seiji Nakahata
发明人： Fumitaka SATO , Seiji Nakahata
IPC分类号： H01L29/20
CPC分类号： C30B25/04 , C30B25/18 , C30B29/40 , C30B29/406
摘要： A low-distortion gallium nitride crystal substrate including low dislocation single crystal regions (Z) having a definite c-axis and a definite a-axis, C-plane growth regions (Y) having a c-axis and a-axis parallel to the c-axis and a-axis of the low dislocation single crystal regions (Z), voluminous defect accumulating regions (H) having a c-axis inverse to the c-axis of the low dislocation single crystal regions (Z) and an a-axis parallel with the a-axis of the low dislocation single crystal regions (Z), and 0.1/cm2 to 10/cm2 c-axis gross core regions (F) containing at least one crystal having a c-axis parallel to the c-axis of the low dislocation single crystal regions (Z) and an a-axis different from the a-axis of the low dislocation single crystal regions (Z).
摘要翻译：一种低失真氮化镓晶体基板，包括具有确定的c轴和一定a轴的低位错单晶区域（Z），C平面生长区域（Y）具有平行于低位错单晶区域（Z）的c轴和a轴，具有与低位错单晶区域（Z）的c轴相反的c轴的大量缺陷积聚区域（H）轴向与低位错单晶区域（Z）的a轴平行，以及包含至少一个c轴平行于c-轴的晶体的0.1 / cm 2至10 / cm 2的c轴总芯区域（F）低位错单晶区域（Z）的轴线和与低位错单晶区域（Z）的a轴不同的a轴。

124. 发明申请

US20090197398A1 III Nitride Single Crystal and Method of Manufacturing Semiconductor Device Incorporating the III Nitride Single Crystal 有权
标题翻译： III型氮化物单晶及其制造方法制造的III型氮化物单晶的半导体器件
公开(公告)号：US20090197398A1
公开(公告)日：2009-08-06
申请号：US12419310
申请日：2009-04-07
申请人： Seiji Nakahata
发明人： Seiji Nakahata
IPC分类号： H01L21/20 , B32B9/00
CPC分类号： C30B19/04 , C30B7/00 , C30B7/005 , C30B9/06 , C30B13/02 , C30B29/403
摘要： A III nitride single-crystal manufacturing method in which a liquid layer (3) of 200 μm or less thickness is formed in between a substrate (1) and a III nitride source-material baseplate (2), and III nitride single crystal (4) is grown onto the face (1s) on the liquid-layer side of the substrate (1). Herein, the substrate (1) in at least a superficial layer (1a) on the liquid-layer side may be formed of a III nitride single crystal, while the III nitride source-material baseplate (2) can be formed of a III nitride polycrystal. Further, the substrate (1) in at least a superficial layer (1a) on the liquid-layer side, and the III nitride source-material baseplate (2) can be formed of a III nitride single crystal, while the face (1s) on the liquid-layer side of the substrate (1) can be made a III-atom surface, and the face (2s) on the liquid-layer side of the III nitride source-material baseplate (2) can be made a nitrogen-atom surface.
摘要翻译：在基板（1）和III族氮化物源材料基板（2）之间形成厚度为200μm以下的液体层（3）和III族氮化物单晶（4）的III族氮化物单晶体制造方法）生长在基板（1）的液体层侧的面（1s）上。这里，液面侧的至少表面层（1a）中的基板（1）可以由III族氮化物单晶形成，而III族氮化物源材料基板（2）可以由III族氮化物多晶体此外，液面层至少表层（1a）中的基板（1）和III族氮化物源材料基板（2）可以由III族氮化物单晶形成，而面（1s）可以在基板（1）的液面侧形成III原子表面，并且可以将III族氮化物源材料基板（2）的液体层侧的面（2s）原子表面。

125. 发明授权

US07556687B2 Gallium nitride crystal substrate and method of producing same 失效
标题翻译：氮化镓晶体基板及其制造方法
公开(公告)号：US07556687B2
公开(公告)日：2009-07-07
申请号：US11602948
申请日：2006-11-22
申请人： Fumitaka Sato , Seiji Nakahata
发明人： Fumitaka Sato , Seiji Nakahata
IPC分类号： C30B29/38
CPC分类号： C30B25/04 , C30B25/18 , C30B29/40 , C30B29/406
摘要： A low-distortion gallium nitride crystal substrate including low dislocation single crystal regions (Z) having a definite c-axis and a definite a-axis, C-plane growth regions (Y) having a c-axis and a-axis parallel to the c-axis and a-axis of the low dislocation single crystal regions (Z), voluminous defect accumulating regions (H) having a c-axis inverse to the c-axis of the low dislocation single crystal regions (Z) and an a-axis parallel with the a-axis of the low dislocation single crystal regions (Z), and 0.1/cm2 to 10/cm2 c-axis gross core regions (F) containing at least one crystal having a c-axis parallel to the c-axis of the low dislocation single crystal regions (Z) and an a-axis different from the a-axis of the low dislocation single crystal regions (Z).
摘要翻译：一种低失真氮化镓晶体基板，包括具有确定的c轴和一定a轴的低位错单晶区域（Z），C平面生长区域（Y）具有平行于低位错单晶区域（Z）的c轴和a轴，具有与低位错单晶区域（Z）的c轴相反的c轴的大量缺陷积聚区域（H）轴向与低位错单晶区域（Z）的a轴平行，以及包含至少一个c轴平行于c-轴的晶体的0.1 / cm 2至10 / cm 2的c轴总芯区域（F）低位错单晶区域（Z）的轴线和与低位错单晶区域（Z）的a轴不同的a轴。

126. 发明申请

US20080014756A1 Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers 失效
标题翻译：生产3族氮化物衬底晶片和3族氮化物衬底晶片的方法
公开(公告)号：US20080014756A1
公开(公告)日：2008-01-17
申请号：US11822903
申请日：2007-07-11
申请人： Keiji Ishibashi , Masato Irikura , Seiji Nakahata
发明人： Keiji Ishibashi , Masato Irikura , Seiji Nakahata
IPC分类号： H01L21/461
CPC分类号： H01L21/02013 , B24B37/042 , H01L21/02027 , H01L21/6835 , H01L23/544 , H01L29/0657 , H01L2221/6834 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： Quality of one-surface planar processed group 3 nitride wafers depends upon a direction of pasting of wafers on a polishing plate. Low surface roughness and high yield are obtained by pasting a plurality of group 3 nitride as-grown wafers on a polishing plate with OFs or notches facing forward (f), backward (b) or inward (u) with thermoplastic wax having a thickness of 10 μm or less, grinding the as-grown wafers, lapping the ground wafers, polishing the lapped wafers into mirror wafers with a bevel of a horizontal width of 200 μm or less and a vertical depth of 100 μm or less.
摘要翻译：单面平面处理组3氮化物晶片的质量取决于晶片在抛光板上的粘贴方向。通过将多个第3组氮化物生长的晶片粘贴在具有面向前（f），向后（b）或向内（u）的OF或凹槽的抛光板上，获得厚度为研磨生长的晶片，研磨研磨的晶片，将研磨的晶片抛光成具有200μm或更小的水平宽度和100μm或更小的垂直深度的斜面的镜晶片。

127. 发明申请

US20060292728A1 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物晶体，氮化物晶体衬底，含外延层的氮化物晶体衬底，半导体器件及其制造方法
公开(公告)号：US20060292728A1
公开(公告)日：2006-12-28
申请号：US11473122
申请日：2006-06-23
申请人： Keiji Ishibashi , Tokiko Kaji , Seiji Nakahata , Takayuki Nishiura
发明人： Keiji Ishibashi , Tokiko Kaji , Seiji Nakahata , Takayuki Nishiura
IPC分类号： C30B33/06 , H01L21/00 , H01L33/00
CPC分类号： G01N23/207 , C30B25/186 , C30B25/20 , C30B29/38 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , G01B15/08 , G01N2223/602 , G01N2223/634 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L22/12 , H01L29/04 , H01L29/045 , H01L29/2003 , Y10T428/2978
摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.
摘要翻译：氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线满足特定平行晶格面的衍射条件，在由d 1的值表示的晶体的表面层上的均匀的畸变-d 2/2 在0.3μm的X射线穿透深度处从平面间隔d 1> 1获得的平面间隔d <2>和在X射线处的平面间隔d 2 <2> 5μm的穿透深度等于或低于2.1×10 -3 -3。上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底，含氮化物晶体基板，半导体装置及其制造方法。

128. 发明申请

US20060054942A1 Light emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：US20060054942A1
公开(公告)日：2006-03-16
申请号：US10522829
申请日：2004-05-31
申请人： Seiji Nakahata
发明人： Seiji Nakahata
IPC分类号： H01L31/112
CPC分类号： H01L33/20 , H01L33/24
摘要： A light emitting device which has increased light emitting amount without changing its size is provided. The light emitting device is characterized in that a semiconductor layer 30 is formed on an uneven surface 1a of an uneven substrate 1. The light emitting device of the invention can be configured such that the uneven substrate and the semiconductor layer are both made of AlxGayIn1-x-yN (0≦x, 0≦y, x+y≦1); each of the planes forming the uneven surface of the uneven substrate has at least one plane index selected from among (11-2L) and (1-10L) in which L represents an integer from 1 to 4; and the angle formed between each of the planes forming the uneven surface of the uneven substrate and the base plane is from 35° to 80°.
摘要翻译：提供了不改变其尺寸而增加发光量的发光器件。发光器件的特征在于，在不平坦衬底1的不平坦表面1a上形成半导体层30.本发明的发光器件可以被构造成使得不平坦衬底和半导体层都由Al 在1-xy N（0 <= x，0 <= y，x + y <= 1）中，x 形成不平坦衬底的不平坦表面的每个平面具有选自（11-2L）和（1-10L）中的至少一个平面指数，其中L表示1至4的整数; 并且形成不平坦基板的不平坦表面的平面和基面之间形成的角度为35°至80°。

129. 发明申请

US20050037595A1 Method of recovering and reproducing substrates and method of producing semiconductor wafers 失效
标题翻译：回收和再生基片的方法及制造半导体晶片的方法
公开(公告)号：US20050037595A1
公开(公告)日：2005-02-17
申请号：US10895142
申请日：2004-07-21
申请人： Seiji Nakahata
发明人： Seiji Nakahata
IPC分类号： H01L21/02 , H01L21/20 , H01L21/30 , H01L21/46
CPC分类号： H01L21/02631 , H01L21/02389 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： A method of recovering a first substrate, including the steps of: sticking a second substrate on a semiconductor layer epitaxially grown on the first substrate; and separating the semiconductor layer and the first substrate. Furthermore, a method of reproducing a first substrate, including the step of surface processing the first substrate separated. Furthermore, a method of reproducing a first substrate, including the step of homoepitaxially growing the first substrate surface processed. Furthermore, a method of producing a semiconductor wafer, including the step of epitaxially growing a semiconductor layer on a first substrate. Thus a group III nitride or similar, expensive substrate can be used to efficiently and economically, epitaxially grow a group III nitride or similar semiconductor layer.
摘要翻译：一种回收第一衬底的方法，包括以下步骤：将第二衬底粘附在在第一衬底上外延生长的半导体层上; 以及分离半导体层和第一基板。此外，再现第一基板的方法，包括对分离的第一基板进行表面处理的步骤。此外，再现第一衬底的方法，包括处理的第一衬底表面的同质外延生长步骤。此外，制造半导体晶片的方法，包括在第一基板上外延生长半导体层的步骤。因此，可以使用III族氮化物或类似的昂贵的衬底来有效和经济地外延生长III族氮化物或类似的半导体层。

130. 发明授权

US5618765A Ceramics porous body and method of preparing the same 失效
标题翻译：陶瓷多孔体及其制备方法
公开(公告)号：US5618765A
公开(公告)日：1997-04-08
申请号：US367220
申请日：1995-01-06
申请人： Hisao Takeuchi , Seiji Nakahata , Takahiro Matsuura , Chihiro Kawai
发明人： Hisao Takeuchi , Seiji Nakahata , Takahiro Matsuura , Chihiro Kawai
IPC分类号： B01D39/20 , C04B38/00 , C04B35/58
CPC分类号： C04B38/00 , B01D39/2075
摘要： A ceramics porous body having a high porosity as well as high strength is especially suitable for use as a filter for removing foreign matter from a fluid or as a catalytic carrier. The porous body has a porosity of at least 30% and comprises columnar ceramic grains having an aspect ratio of at least 3. In particular, the porous body comprises Si.sub.3 N.sub.4 grains, of which at least 60% are hexagonal columnar beta-Si.sub.3 N.sub.4 grains. The porous body further comprises at least one compound of a rare earth element in an amount of at least 1 vol.% and not more than 20 vol.% of an oxide of the rare earth element, and optionally at least one compound of elements of the groups IIa and IIIb of the periodic table and transition metal elements in an amount of not more than 5 vol.% of an oxide of each element. A compact of mixed powder obtained by adding the compound powder of the rare earth element to silicon nitride powder is heat treated in a nitrogen atmosphere at a temperature of at least 1500.degree. C., to prepare the silicon nitride ceramic porous body.
摘要翻译： PCT No.PCT / JP94 / 00803 Sec。 371 1995年1月6日第 102（e）1995年1月6日PCT PCT 1994年5月19日PCT公布。第WO94 / 27929号公报日期1994年12月8日具有高孔隙率和高强度的陶瓷多孔体特别适合用作从流体或催化载体中除去异物的过滤器。多孔体具有至少30％的孔隙率，并且包括纵横比至少为3的柱状陶瓷颗粒。特别地，多孔体包括Si 3 N 4晶粒，其中至少60％是六边形柱状β-Si 3 N 4晶粒。所述多孔体还包含稀土元素的至少一种化合物，其量为所述稀土元素的氧化物的至少1体积％且不超过20体积％，以及任选的至少一种化合物周期表的IIa和IIIb族和过渡金属元素的量不超过每种元素氧化物的5体积％。在氮气氛下，在至少1500℃的温度下，将稀土元素的复合粉末添加到氮化硅粉末中而获得的混合粉末的压块进行热处理，制备氮化硅陶瓷多孔体。

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