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1. 发明申请

US20130202665A1 OILY SOLID COSMETIC 有权
标题翻译：油性固体化妆品
公开(公告)号：US20130202665A1
公开(公告)日：2013-08-08
申请号：US13127003
申请日：2009-10-28
申请人： Kiriko Chiba , Fumitaka Sato
发明人： Kiriko Chiba , Fumitaka Sato
IPC分类号： A61K8/02
CPC分类号： A61K8/022 , A61K8/025 , A61K8/0254 , A61K8/25 , A61K8/29 , A61K8/31 , A61K2800/412 , A61K2800/436 , A61K2800/592 , A61Q1/02 , A61Q1/06 , A61Q1/10
摘要： An oily solid cosmetic is capable of effectively diminishing morphological problems, such as vertical wrinkles, in particular on the lip, over a long period of time. The present invention provides an oily solid cosmetic which contains: (A) a plate-like composite powder presenting interference colors, (B) a spherical composite powder wherein the surface of a spherical powder having a refractive index of 1.40 to 1.60 is coated with a coating component having a refractive index of 2.00 to 2.90, and (C) 1 to 40% by mass of a semi-solid oil component. Preferably, the cosmetic of the present invention further contains (D) heavy isoparaffin. The cosmetic of the present invention is capable of diminishing vertical wrinkles, in particular on the lip, over a long period of time, and of maintaining a glossy lip.
摘要翻译：油性固体化妆品能够长时间有效地减少形态学问题，例如垂直皱纹，特别是在唇部上。本发明提供一种油性固体化妆品，其含有：（A）具有干涉色的板状复合粉末，（B）球状复合粉末，其中折射率为1.40〜1.60的球形粉末的表面涂布有涂料成分的折射率为2.00〜2.90，（C）为1〜40质量％的半固体成分。优选本发明的化妆品还含有（D）重质异链烷烃。本发明的化妆品能够长时间地减少垂直皱纹，特别是在唇部上，并且保持光泽的唇部。

2. 发明申请

US20120052100A1 Cosmetic For Eyelashes 审中-公开
标题翻译：化妆品睫毛
公开(公告)号：US20120052100A1
公开(公告)日：2012-03-01
申请号：US12808705
申请日：2008-12-17
申请人： Nobuyuki Ide , Amane Tatsuta , Fumitaka Sato
发明人： Nobuyuki Ide , Amane Tatsuta , Fumitaka Sato
IPC分类号： A61K8/02 , A61K8/92 , A61Q1/10
CPC分类号： A61Q1/10 , A61K8/31 , A61K8/585 , A61K8/731 , A61K8/88 , A61K8/891
摘要： To provide a cosmetic for eyelashes, which is excellent in the effect of imparting a feeling of voluminousness to eyelashes and exerts high base transparency without damage to the color inherent in the cosmetic base. Means of attaining the object A cosmetic for eyelashes which comprises (a) a silicone resin powder of particles having such a spiky-surface-sugar-candy-ball-like shape that small protrusions are present over the whole surface of each particle, (b) a volatile oil (e.g., low-boiling-point isoparaffinic hydrocarbon oil, low-boiling-point silicone oil, etc.), and (c) an oily gelling agent. Preferably, the cosmetic contains 1-20% by weight of component (a), 10-80% by mass of component (b) and 1-25% by mass of component (c). The cosmetic may optionally contain (d) a film-forming agent.
摘要翻译：提供一种用于睫毛的化妆品，其对于赋予睫毛大量的感觉的效果优异，并且在不损害化妆品基质固有的颜色的情况下施加高的基础透明度。实现目的的手段用于睫毛的化妆品，其包含（a）具有尖形表面糖 - 糖 - 球状形状的颗粒的有机硅树脂粉末，在每个颗粒的整个表面上存在小的突起，（b ）挥发油（例如低沸点异链烷烃油，低沸点硅油等）和（c）油性胶凝剂。优选地，化妆品含有1-20重量％的组分（a），10-80质量％的组分（b）和1-25质量％的组分（c）。化妆品可以任选地含有（d）成膜剂。

3. 发明申请

US20100280749A1 ON-VEHICLE GUIDANCE APPARATUS 有权
标题翻译：车辆指导装置
公开(公告)号：US20100280749A1
公开(公告)日：2010-11-04
申请号：US12740961
申请日：2008-11-19
申请人： Yuki Furumoto , Tadashi Suzuki , Fumitaka Sato
发明人： Yuki Furumoto , Tadashi Suzuki , Fumitaka Sato
IPC分类号： G01C21/00
CPC分类号： G01C21/3629 , G10L13/00
摘要： An on-vehicle guidance apparatus is characterized in including an output sound control means for acquiring a sound volume setting of onboard equipment, a sound volume determining means for determining whether or not the sound volume setting is smaller than a predetermined threshold, and a guidance output control means for issuing a command for carrying out voice guidance in response to a determination signal from the sound volume determining means at a time when the sound volume setting becomes smaller than the above-mentioned threshold.
摘要翻译：一种车载引导装置的特征在于包括用于获取车载设备的音量设定的输出声音控制装置，用于确定音量设置是否小于预定阈值的音量确定装置，以及引导输出控制装置，用于在音量设定变得小于上述阈值时响应于来自音量确定装置的确定信号，发出用于执行语音引导的命令。

4. 发明授权

US07771532B2 Nitride semiconductor substrate and method of producing same 有权
公开(公告)号：US07771532B2
公开(公告)日：2010-08-10
申请号：US12388983
申请日：2009-02-19
申请人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
发明人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
IPC分类号： C30B23/00 , C30B28/14 , H01L31/00 , H01L21/00
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02642 , H01L21/02647
摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts , not burying the facets, maintaining the convex facet hills on Π and the network concavities on , excluding dislocations in the facet hills down to the outlining concavities on , forming a defect accumulating region H on , decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.

5. 发明申请

US20090155989A1 NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME 有权
标题翻译：氮化物半导体基板及其制造方法
公开(公告)号：US20090155989A1
公开(公告)日：2009-06-18
申请号：US12388983
申请日：2009-02-19
申请人： Koji UEMATSU , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
发明人： Koji UEMATSU , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02642 , H01L21/02647
摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts not burying the facets, maintaining the convex facet hills on Π and the network concavities on excluding dislocations in the facet hills down to the outlining concavities on forming a defect accumulating region H on decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.
摘要翻译：氮化物半导体晶体基板通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，在露出部分Pi上产生由小面覆盖的凸面小丘，从而形成掩模覆盖的凹面部分不包括小平面上的位错，直到减少小平面山丘的位错，改善小丘到低缺陷密度单晶区域Z，产生坚固的氮化物晶体，并将氮化物晶体切割和研磨成镜面氮化物晶片。在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。

6. 发明授权

US07518216B2 Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride 失效
标题翻译：氮化镓基板，外延基板和形成氮化镓的方法
公开(公告)号：US07518216B2
公开(公告)日：2009-04-14
申请号：US11276966
申请日：2006-03-20
申请人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
发明人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
IPC分类号： H01L29/20
CPC分类号： C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/0254 , H01L21/02581 , H01L21/0262
摘要： A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate 1, such as a sapphire substrate having the (0001) plane, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus 11. Next, gaseous iron compound GFe from a source 13 for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source 15 are caused to react with each other in a mixing container 16 to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source 17, and second substance gas GGa containing elemental gallium are supplied to a reaction tube 21 to form iron-doped gallium nitride 23 on the substrate 1.
摘要翻译：提供了一种形成用于半绝缘GaN衬底的掺杂铁的氮化镓的方法。将具有（0001）面的蓝宝石衬底的衬底1放置在金属有机氯化物气相装置11的基座上。接下来，来自用于铁化合物如二茂铁的源13的气态铁化合物GFe，并使来自氯化氢源15的氯化氢气体G1HCl在混合容器16中相互反应，生成含铁反应产物如氯化铁（FeCl 2）的气体GFeComp。与该产生相关，含铁反应产物GFeComp，含有氮源17的元素氮的第一物质气体GN和含有元素镓的第二物质气体GGa被供给到反应管21中，以形成掺杂铁的氮化镓23 在基板1上。

7. 发明申请

US20080308814A1 GALLIUM NITRIDE SUBSTRATE AND GALLIUM NITRIDE LAYER FORMATION METHOD 有权
标题翻译：氮化硅衬底和氮化镓层形成方法
公开(公告)号：US20080308814A1
公开(公告)日：2008-12-18
申请号：US12136275
申请日：2008-06-10
申请人： Seiji NAKAHATA , Fumitaka Sato , Yoshiki Miura , Akinori Koukitu , Yoshinao Kumagai
发明人： Seiji NAKAHATA , Fumitaka Sato , Yoshiki Miura , Akinori Koukitu , Yoshinao Kumagai
IPC分类号： H01L29/205 , H01L21/205
CPC分类号： C30B25/00 , C30B29/406 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02581 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/207
摘要： There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×106Ω·cm or more, including steps of: forming a gallium nitride layer containing iron on a substrate; and heating said gallium nitride layer formed on said substrate.
摘要翻译：公开了形成电阻率为1×10 6Ω·cm以上的氮化镓层的方法，包括以下步骤：在基板上形成含有铁的氮化镓层; 以及加热形成在所述衬底上的所述氮化镓层。

8. 发明申请

US20070148920A1 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US20070148920A1
公开(公告)日：2007-06-28
申请号：US11643675
申请日：2006-12-22
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

9. 发明申请

US20060272572A1 Nitride semiconductor substrate and method of producing same 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US20060272572A1
公开(公告)日：2006-12-07
申请号：US11446955
申请日：2006-06-06
申请人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
发明人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02642 , H01L21/02647
摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts γ, not burying the facets, maintaining the convex facet hills on Π and the network concavities on γ, excluding dislocations in the facet hills down to the outlining concavities on γ, forming a defect accumulating region H on γ, decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.
摘要翻译：氮化物半导体晶体基板通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，在露出部分Pi上产生由小面覆盖的凸面小丘，从而形成掩模覆盖的凹面部分伽马，不掩埋小平面，保持Pi上的凸面小丘和γ上的网格凹面，不考虑小平面丘上的位错，直到伽马的轮廓凹面，在伽马上形成缺陷累积区H，减小刻面上的位错小丘，改善小缺陷密度单晶区域Z，产生坚固的氮化物晶体，并将氮化物晶体切割和研磨成镜面氮化物晶片。在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。

10. 发明授权

US5962456A N-acylpiperazine derivative, anti-ulcer drug, and antibacterial drug 失效
标题翻译： N-酰基哌嗪衍生物，抗溃疡药和抗菌药
公开(公告)号：US5962456A
公开(公告)日：1999-10-05
申请号：US939912
申请日：1997-09-29
申请人： Chikao Nishino , Fumitaka Sato , Hirotada Fukunishi
发明人： Chikao Nishino , Fumitaka Sato , Hirotada Fukunishi
IPC分类号： C07D295/10 , A61K31/495 , A61P1/04 , A61P31/04 , C07D213/72 , C07D213/79 , C07D213/80 , C07D295/14 , C07D295/192 , C07D317/58 , C07D317/60 , C07D317/68 , C07D401/04 , C07D401/12
CPC分类号： C07D295/192 , C07D213/80 , C07D317/68
摘要： An N-acylpiperazine derivative or a salt thereof expressed by the following formula 1: ##STR1## wherein R.sub.1 represents a pyridylcarbonyloxy lower alkyl group, a benzoylamino lower alkyl group, benzyl group, carbamoyl group, pyridyl group, or diphenylmethyl group;R.sub.2 represents a lower alkyl group or a lower alkoxy group;n represents an integer of 0 to 2;R.sub.3 represents a hydrogen atom, an alkenyl group, or benzyl group; andm represents an integer of 1 to 3.The N-acylpiperazine derivative or a salt thereof has an anti-ulcer effect, an antibacterial activity against Helicobacter pyroli, and high safety to be available for prevention or cure of various ulcers.
摘要翻译：由下式1表示的N-酰基哌嗪衍生物或其盐：其中R1表示吡啶基羰基氧基低级烷基，苯甲酰氨基低级烷基，苄基，氨基甲酰基，吡啶基或二苯基甲基; R2代表低级烷基或低级烷氧基; n表示0〜2的整数， R3表示氢原子，烯基或苄基; m表示1〜3的整数。N-酰基哌嗪衍生物或其盐具有抗溃疡作用，对幽门螺杆菌的抗菌活性，以及可用于预防或治愈各种溃疡的高安全性。

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