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111. 发明授权

US06750155B2 Methods to minimize moisture condensation over a substrate in a rapid cycle chamber 有权
标题翻译：在快速循环室中最小化衬底上的湿气冷凝的方法
公开(公告)号：US06750155B2
公开(公告)日：2004-06-15
申请号：US10113014
申请日：2002-03-28
申请人： Harlan I. Halsey , David E. Jacob
发明人： Harlan I. Halsey , David E. Jacob
IPC分类号： H01L21469
CPC分类号： C23C16/4408 , C23C14/566 , H01L21/67017 , Y10S438/908 , Y10T29/41
摘要： A chamber for transitioning a semiconductor substrate between modules operating at different pressures is provided. The chamber includes a base defining an outlet. The outlet permits removal of an atmosphere within the chamber to create a vacuum. A substrate support for supporting a semiconductor substrate within the chamber is included. A chamber top having an inlet is included. The inlet is configured to allow for the introduction of a gas into the chamber to displace moisture in a region defined above the substrate support. Sidewalls extending from the base to the chamber top are included. The sidewalls include access ports for entry and exit of a semiconductor substrate from the chamber. A method for conditioning an environment above a region of a semiconductor substrate within a pressure varying interface is also provided.
摘要翻译：提供了一种在不同压力下工作的模块之间转换半导体衬底的腔室。腔室包括限定出口的基座。出口允许去除室内的气氛以产生真空。包括用于在室内支撑半导体衬底的衬底支撑件。包括具有入口的室顶部。入口构造成允许将气体引入室中以置换在衬底支撑件上方限定的区域中的水分。包括从基座延伸到腔室顶部的侧壁。侧壁包括用于从腔室进入和离开半导体衬底的进入口。还提供了一种用于调节压力变化界面内的半导体衬底区域之上的环境的方法。

112. 发明授权

US06706645B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06706645B2
公开(公告)日：2004-03-16
申请号：US10228083
申请日：2002-08-27
申请人： Tomoyuki Morita , Yusuke Harada
发明人： Tomoyuki Morita , Yusuke Harada
IPC分类号： H01L21469
CPC分类号： H01L21/76856 , H01L21/28556 , H01L21/76843 , H01L21/76861 , H01L21/76862 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： A method of manufacturing a semiconductor device, according to the present invention comprises a step for forming an insulating film over a semiconductor wafer and thereafter subjecting the same to photolithography and etching to thereby define a contact hole, a step for forming an adhesive layer over the insulating film with the contact hole defined therein, a step for placing the interior of a processing chamber under an atmosphere uncontaining oxygen and subjecting the adhesive layer to heat treatment, a step for setting the temperature of the semiconductor wafer to less than or equal to a temperature equivalent to energy of such an extent as to cut the bonding between atoms which form the adhesive layer and thereafter taking the semiconductor wafer out of the processing chamber, and a step for forming an embedding film to be embedded in the contact hole.
摘要翻译：根据本发明的制造半导体器件的方法包括在半导体晶片上形成绝缘膜，然后对其进行光刻和蚀刻从而限定接触孔的步骤，用于在其上形成粘合剂层的步骤具有限定在其中的接触孔的绝缘膜，用于将处理室的内部放置在不含氧气氛并对粘合剂层进行热处理的步骤，将半导体晶片的温度设定为小于或等于温度等于能够切割形成粘合剂层的原子之间的接合，然后将半导体晶片从处理室中取出的程度的能量，以及形成嵌入在接触孔中的嵌入膜的步骤。

113. 发明授权

US06656855B2 Deposition method of dielectric films having a low dielectric constant 有权
公开(公告)号：US06656855B2
公开(公告)日：2003-12-02
申请号：US10379490
申请日：2003-03-04
申请人： Michele Vulpio
发明人： Michele Vulpio
IPC分类号： H01L21469
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02216 , H01L21/02271 , H01L21/3122 , Y10T428/31663
摘要： A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.

114. 发明授权

US06602802B2 Method of forming a porous film on a substrate 有权
标题翻译：在基材上形成多孔膜的方法
公开(公告)号：US06602802B2
公开(公告)日：2003-08-05
申请号：US10126687
申请日：2002-04-22
申请人： Nobuo Aoi
发明人： Nobuo Aoi
IPC分类号： H01L21469
CPC分类号： H01L21/76835 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/3122 , H01L21/31695 , H01L21/76802 , H01L21/76807 , H01L21/76814 , H01L21/7682 , H01L21/76826 , H01L23/5222 , H01L23/5329 , H01L2221/1036 , H01L2221/1047 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An organic-inorganic hybrid film is deposited on a substrate by introducing, into a vacuum chamber, a gas mixture of a silicon alkoxide and an organic compound and generating a plasma derived from the gas mixture. Then, a hydrogen plasma process is performed with respect to the organic-inorganic hybrid film by introducing, into the vacuum chamber, a gas containing a reducing gas and generating a plasma derived from the gas. As a result, an organic component in the organic-inorganic hybrid film eliminates therefrom and numerous fine holes are formed in hollow portions from which the organic component has eliminated, whereby a porous film composed of the organic-inorganic hybrid film is obtained.
摘要翻译：通过在真空室中引入硅醇盐和有机化合物的气体混合物并产生来自气体混合物的等离子体，将有机 - 无机杂化膜沉积在基板上。然后，通过向真空室中引入含有还原气体的气体并产生来自气体的等离子体，对有机 - 无机杂化膜进行氢等离子体处理。结果，有机 - 无机杂化膜中的有机成分消失，并且有机成分被除去的中空部分形成许多细孔，得到由有机 - 无机杂化膜构成的多孔膜。

115. 发明授权

US06602800B2 Apparatus for forming thin film on semiconductor substrate by plasma reaction 有权
标题翻译：用于通过等离子体反应在半导体衬底上形成薄膜的装置
公开(公告)号：US06602800B2
公开(公告)日：2003-08-05
申请号：US09851809
申请日：2001-05-09
申请人： Nobuo Matsuki
发明人： Nobuo Matsuki
IPC分类号： H01L21469
CPC分类号： H01L21/02203 , C23C16/401 , C23C16/452 , C23C16/5096 , H01L21/02126 , H01L21/02214 , H01L21/02216 , H01L21/02274 , H01L21/02359 , H01L21/3105
摘要： A plasma CVD apparatus for forming a thin film on a semiconductor substrate by plasma reaction includes: (i) a reaction chamber; (ii) a reaction gas inlet for introducing a reaction gas into the reaction chamber; (iii) a lower stage on which a semiconductor substrate is placed in the reaction chamber; (iv) an upper electrode for plasma excitation in the reaction chamber; and (v) an electrically conductive intermediate plate with plural pores disposed between the upper electrode and the lower stage. The intermediate plate divides the interior of the reaction chamber into an upper region and a lower region, wherein the lower region has no significant presence of plasma.
摘要翻译：用于通过等离子体反应在半导体衬底上形成薄膜的等离子体CVD装置包括：（i）反应室; （ii）用于将反应气体引入反应室的反应气体入口; （iii）将半导体衬底放置在反应室中的下级; （iv）反应室中等离子体激发的上电极; 和（v）具有设置在上电极和下电极之间的多个孔的导电中间板。中间板将反应室的内部分成上部区域和下部区域，其中下部区域不存在等离子体的显着存在。

116. 发明授权

US06573195B1 Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere 有权
标题翻译：通过在氢气氛中进行热处理来制造半导体器件的方法
公开(公告)号：US06573195B1
公开(公告)日：2003-06-03
申请号：US09490974
申请日：2000-01-24
申请人： Shunpei Yamazaki , Taketomi Asami , Hidehito Kitakado , Yasuyuki Arai
发明人： Shunpei Yamazaki , Taketomi Asami , Hidehito Kitakado , Yasuyuki Arai
IPC分类号： H01L21469
CPC分类号： H01L27/127 , G02F1/133345 , G02F1/13454 , G02F1/1362 , H01L21/3003 , H01L21/3144 , H01L21/3145 , H01L27/1214 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： In fabricating a semiconductor device, a hydrogen-containing first insulating film is formed over a semiconductor layer, a gate insulating film and a gate electrode, and a first heat-treatment in a hydrogen atmosphere is performed. A second insulating film can be formed on the first insulating film, and a second heat-treatment in a hydrogen atmosphere performed. A hydrogen-containing third insulating film can be formed on the second insulating film, and a third heat-treatment in an atmosphere containing hydrogen or nitrogen performed. By these methods, damages to a semiconductor layer caused by hydrogenation can be avoided.
摘要翻译：在制造半导体器件时，在半导体层，栅极绝缘膜和栅电极上形成含氢的第一绝缘膜，并且在氢气氛中进行第一热处理。可以在第一绝缘膜上形成第二绝缘膜，并在氢气氛中进行第二热处理。可以在第二绝缘膜上形成含氢的第三绝缘膜，并在包含氢或氮的气氛中进行第三次热处理。通过这些方法，可以避免由氢化引起的对半导体层的损伤。

117. 发明授权

US06544901B1 Plasma thin-film deposition method 失效
标题翻译：等离子体薄膜沉积法
公开(公告)号：US06544901B1
公开(公告)日：2003-04-08
申请号：US09578726
申请日：2000-05-26
申请人： Risa Nakase
发明人： Risa Nakase
IPC分类号： H01L21469
CPC分类号： H01L21/0212 , C23C16/26 , C23C16/30 , H01L21/02274 , H01L21/3127 , H01L21/314 , H01L21/76801
摘要： As thin-film deposition gases, cyclic C5F8 gas and a hydrocarbon gas, e.g., C2H4 gas, are used. These gases are activated as plasma under a pressure of, e.g., 0.1 Torr, to deposit a CF film on a semiconductor wafer at a process temperature of 400° C. using active species thereof. Alternatively, cyclic C6F6 gas is used as a thin-film deposition gas, and activated as plasma under a pressure of, e.g., 0.06 Pa, to deposit a CF film on a semiconductor wafer at a process temperature of 400° C. using active species thereof.
摘要翻译：作为薄膜沉积气体，使用环状C 5 F 8气体和烃气体，例如C 2 H 4气体。这些气体在例如0.1托的压力下作为等离子体活化，以使用其活性物质在400℃的温度下在半导体晶片上沉积CF膜。或者，环状C 6 F 6气体用作薄膜沉积气体，并且在例如0.06Pa的压力下作为等离子体活化，以在400℃的工艺温度下在半导体晶片上沉积CF膜，使用活性物质其中。

118. 发明授权

US06541392B2 Method for fabricating three dimensional anisotropic thin films 失效
公开(公告)号：US06541392B2
公开(公告)日：2003-04-01
申请号：US09907117
申请日：2001-07-17
申请人： Yuval C Avniel , Alexander N. Govyadinov , Peter Mardilovich
发明人： Yuval C Avniel , Alexander N. Govyadinov , Peter Mardilovich
IPC分类号： H01L21469
CPC分类号： H01L21/31 , C23C14/0641 , C23C14/165 , C23C14/352 , C23C14/543
摘要： A method for the production of anisotropic, three dimensional thin films is disclosed. Instead of fabricating away from the routine tendency of vacuum sputter deposited thin films to form discontinuous islands which then accrete into the third dimension, the present method encourages this anisotropic formation. By precisely controlling gun voltage and deposition time, together with spectral control over the plasma forming gas and any reactive gas, with accurate substrate temperature control, and real-time feed-back and control over deposition parameters, two or more materials are sequentially grown on a substrate as distinct discontinuous islands. The resultant film maintains the optimum characteristics of each one of the film's components. Other novel structures made possible by the method of the invention include unique single component and post method deposited component anisotropic thin films.

119. 发明授权

US06524972B1 Method for forming an interlayer insulating film, and semiconductor device 失效
标题翻译：用于形成层间绝缘膜的方法和半导体器件
公开(公告)号：US06524972B1
公开(公告)日：2003-02-25
申请号：US09521843
申请日：2000-03-09
申请人： Kazuo Maeda
发明人： Kazuo Maeda
IPC分类号： H01L21469
CPC分类号： H01L21/76849 , C23C16/04 , C23C16/402 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02304 , H01L21/02315 , H01L21/02362 , H01L21/31695 , H01L21/76801 , H01L21/76819 , H01L21/7682 , H01L21/76826 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L2221/1047 , Y10S438/96
摘要： A method for forming an interlayer insulating film is disclosed. This method comprises the steps of: forming an underlying insulating film on an object to be formed; and forming a porous SiO2 film on said underlying insulating film by a Chemical Vapor Deposition that employs a source gas containing TEOS (tetraethoxy silane) and O3 where the O3 is contained in the source gas with first concentration that is lower than concentration necessary for oxidizing the TEOS. Alternative method for forming an interlayer insulating film is also disclosed. This method comprises the step of: forming an underlying insulating film on an object to be formed; performing Cl (chlorine) plasma treatment for the underlying insulating film; and forming a porous SiO2 film on the underlying insulating film by a Chemical Vapor Deposition that employs a source gas containing TEOS (tetraethoxy silane) and O3.
摘要翻译：公开了一种用于形成层间绝缘膜的方法。该方法包括以下步骤：在要形成的物体上形成底层绝缘膜; 并通过化学气相沉积在所述底层绝缘膜上形成多孔SiO 2膜，所述化学气相沉积采用含有TEOS（四乙氧基硅烷）和O 3的源气体，其中所述源气体中含有O 3的第一浓度低于氧化所需的浓度还公开了用于形成层间绝缘膜的替代方法。该方法包括以下步骤：在要形成的物体上形成下面的绝缘膜; 对下层绝缘膜进行Cl（氯）等离子体处理; 并通过采用含有TEOS（四乙氧基硅烷）和O 3的源气体的化学气相沉积在底层绝缘膜上形成多孔SiO 2膜。

120. 发明授权

US06518202B2 Method for fabricating semiconductor integrated circuit device 有权
公开(公告)号：US06518202B2
公开(公告)日：2003-02-11
申请号：US09752737
申请日：2001-01-03
申请人： Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
发明人： Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
IPC分类号： H01L21469
CPC分类号： H01L21/31662 , H01L21/02052 , H01L21/02238 , H01L21/02255 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L21/67109 , H01L21/67167 , H01L21/67173 , H01L21/67213 , H01L21/67219 , H01L21/823807 , H01L21/823814 , H01L21/823857 , H01L29/42364 , H01L29/518 , Y10S148/023 , Y10S148/116 , Y10S438/935
摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

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