专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明授权

US06946033B2 Heated gas distribution plate for a processing chamber 失效
标题翻译：用于处理室的加热气体分配板
公开(公告)号：US06946033B2
公开(公告)日：2005-09-20
申请号：US10245443
申请日：2002-09-16
申请人： Lun Tsuei , Soovo Sen , Ju-Hyung Lee , Juan Carlos Rocha-Alvarez , Inna Shmurun , Maosheng Zhao , Troy Kim , Shankar Venkataraman
发明人： Lun Tsuei , Soovo Sen , Ju-Hyung Lee , Juan Carlos Rocha-Alvarez , Inna Shmurun , Maosheng Zhao , Troy Kim , Shankar Venkataraman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/509 , H01L21/00 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4557 , C23C16/45565 , C23C16/5096 , H01L21/67017
摘要： An apparatus for distributing gas in a processing system. In one embodiment, the system includes a gas distribution assembly having a gas distribution plate. The gas distribution plate defines a plurality of holes through which gases are transmitted. The assembly further includes a gas box coupled to the gas distribution plate, in which the gas box is configured to supply the gases into the plurality of holes. The assembly further includes a means for reducing heat transfer from the gas box to the gas distribution plate.
摘要翻译：一种用于在处理系统中分配气体的装置。在一个实施例中，该系统包括具有气体分配板的气体分配组件。气体分配板限定了多个孔，气体通过该孔被传输。组件还包括联接到气体分配板的气体箱，气箱配置成将气体供应到多个孔中。组件还包括用于减少从气箱到气体分配板的热传递的装置。

112. 发明申请

US20050196929A1 Low-thermal-budget gapfill process 有权
标题翻译：低热量预算的填隙过程
公开(公告)号：US20050196929A1
公开(公告)日：2005-09-08
申请号：US10793559
申请日：2004-03-04
申请人： Zheng Yuan , Reza Arghavani , Ellie Yieh , Shankar Venkataraman
发明人： Zheng Yuan , Reza Arghavani , Ellie Yieh , Shankar Venkataraman
IPC分类号： H01L21/336
CPC分类号： H01L21/76224 , C23C16/403 , C23C16/45536 , C23C16/45544 , H01J37/32009 , H01L21/02178 , H01L21/0228 , H01L21/32055 , H01L21/67017 , H01L21/6719 , H01L21/763
摘要： A low-thermal-budget gapfill process is provided for filling a gap formed between two adjacent raised features on a strained-silicon substrate as part of a shallow-trench-isolation process. An electrically insulating liner is deposited using atomic-layer deposition and polysilicon is deposited over the electrically insulating liner, with both stages being conducted at temperatures below 700° C.
摘要翻译：提供了一种低热预算的间隙填充方法，用于填充在应变硅衬底上形成的两个相邻凸起特征之间的间隙，作为浅沟槽隔离工艺的一部分。使用原子层沉积沉积电绝缘衬垫，并且将多晶硅沉积在电绝缘衬垫上，其中两个阶段在低于700℃的温度下进行。

113. 发明申请

US20050153572A1 CVD plasma assisted lower dielectric constant sicoh film 有权
标题翻译： CVD等离子体辅助低介电常数薄膜
公开(公告)号：US20050153572A1
公开(公告)日：2005-07-14
申请号：US11044246
申请日：2005-01-27
申请人： Seon-Mee Cho , Peter Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： C23C16/30 , H01L21/316 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

114. 发明授权

US06913992B2 Method of modifying interlayer adhesion 失效
标题翻译：修饰层间粘合的方法
公开(公告)号：US06913992B2
公开(公告)日：2005-07-05
申请号：US10383837
申请日：2003-03-07
申请人： Francimar Campana Schmitt , Li-Qun Xia , Son Van Nguyen , Shankar Venkataraman
发明人： Francimar Campana Schmitt , Li-Qun Xia , Son Van Nguyen , Shankar Venkataraman
IPC分类号： C23C16/02 , C23C16/30 , C23C16/32 , C23C16/505 , C23C16/56 , H01L21/3105 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76835 , C23C16/0272 , C23C16/30 , C23C16/325 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/02351 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
摘要翻译：提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。一方面，本发明提供了一种处理衬底的方法，包括在衬底上沉积阻挡层，其中阻挡层包括硅和碳并具有小于4的介电常数，沉积与阻挡层相邻的电介质起始层，以及沉积与电介质起始层相邻的第一电介质层，其中介电层包括硅，氧和碳并且具有约3或更小的介电常数。

115. 发明授权

US06486082B1 CVD plasma assisted lower dielectric constant sicoh film 失效
标题翻译： CVD等离子体辅助低介电常数薄膜
公开(公告)号：US06486082B1
公开(公告)日：2002-11-26
申请号：US09885985
申请日：2001-06-18
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： H07L21477
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

116. 发明授权

US06387207B1 Integration of remote plasma generator with semiconductor processing chamber 有权
标题翻译：远程等离子体发生器与半导体处理室的集成
公开(公告)号：US06387207B1
公开(公告)日：2002-05-14
申请号：US09561325
申请日：2000-04-28
申请人： Karthik Janakiraman , Kelly Fong , Chen-An Chen , Paul Le , Rong Pan , Shankar Venkataraman
发明人： Karthik Janakiraman , Kelly Fong , Chen-An Chen , Paul Le , Rong Pan , Shankar Venkataraman
IPC分类号： H01L2100
CPC分类号： H01J37/3244 , H01J37/32357 , H01J37/32458
摘要： A compact, self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to form an integrated substrate processing system. The remote plasma generator is activated in a clean operation to generate cleaning plasma species to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes. A three-way valve is adjustable to control gas flow to the chamber. During the clean operation, the three-way valve directs a cleaning plasma precursor from a first gas line to the remote plasma generator to generate cleaning plasma species which are flowed to the chamber for cleaning deposits therein. During a deposition process, the three-way valve directs a first process gas from the flat gas line to the chamber, bypassing the remote plasma generator. The first process gas is typically mixed with a second process gas supplied from a second gas line in a mixing device prior to entering the chamber for depositing a layer on a substrate disposed therein.
摘要翻译：紧凑的独立式远程等离子体发生器安装在半导体处理室的盖上以形成集成的基板处理系统。远程等离子体发生器在清洁操作中被激活以产生清洁等离子体物质，以提供比原位等离子体清洁过程更好的清洁室和降低全氟化碳排放。三通阀是可调节的，以控制气体流向腔室。在清洁操作期间，三通阀将清洁等离子体前体从第一气体管线引导到远程等离子体发生器，以产生清洗等离子体物质，其流入室以清除其中的沉积物。在沉积过程中，三通阀将来自平坦气体管线的第一工艺气体引导到旁路远程等离子体发生器。在进入室之前，第一工艺气体通常与从混合装置中的第二气体管线供应的第二工艺气体混合，以在其上设置的衬底上沉积一层。

117. 发明授权

US06374831B1 Accelerated plasma clean 有权
公开(公告)号：US06374831B1
公开(公告)日：2002-04-23
申请号：US09246036
申请日：1999-02-04
申请人： Shankar N. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
发明人： Shankar N. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
IPC分类号： B08B700
CPC分类号： C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second2 (scc/s2). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式