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111. 发明授权

US08771929B2 Tone inversion of self-assembled self-aligned structures 有权
公开(公告)号：US08771929B2
公开(公告)日：2014-07-08
申请号：US13587088
申请日：2012-08-16
申请人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
发明人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , H01L21/3086
摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.

112. 发明申请

US20140148012A1 TONE INVERSION OF SELF-ASSEMBLED SELF-ALIGNED STRUCTURES 有权
公开(公告)号：US20140148012A1
公开(公告)日：2014-05-29
申请号：US13587088
申请日：2012-08-16
申请人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
发明人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
IPC分类号： H01L21/033
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , H01L21/3086
摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.

113. 发明授权

US08692229B2 Replacement contacts for all-around contacts 有权
标题翻译：全方位联系人的替换联系人
公开(公告)号：US08692229B2
公开(公告)日：2014-04-08
申请号：US13558532
申请日：2012-07-26
申请人： Guy M. Cohen , Michael A. Guillorn
发明人： Guy M. Cohen , Michael A. Guillorn
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L29/775 , B82Y10/00 , B82Y40/00 , H01L29/0673 , H01L29/413 , H01L29/42364 , H01L29/66439
摘要： In one aspect, a FET device is provided. The FET device includes a substrate; a semiconductor material on the substrate; at least one gate on the substrate surrounding a portion of the semiconductor material that serves as a channel region of the device, wherein portions of the semiconductor material extending out from the gate serve as source and drain regions of the device, and wherein the source and drain regions of the device are displaced from the substrate; a planarizing dielectric on the device covering the gate and the semiconductor material; and contacts which extend through the planarizing dielectric and surround the source and drain regions of the device.
摘要翻译：一方面，提供一种FET器件。 FET器件包括衬底; 衬底上的半导体材料; 所述衬底上的至少一个栅极围绕用作所述器件的沟道区的所述半导体材料的一部分，其中从所述栅极延伸的所述半导体材料的部分用作所述器件的源极和漏极区域，并且其中所述源极和器件的漏极区域从衬底移位; 覆盖栅极和半导体材料的器件上的平坦化电介质; 以及延伸穿过平坦化电介质并且围绕器件的源极和漏极区域的触点。

114. 发明申请

US20130108833A1 HIGH FIDELITY PATTERNING EMPLOYING A FLUOROHYDROCARBON-CONTAINING POLYMER 有权
标题翻译：使用含氟聚合物聚合物的高清晰度图案
公开(公告)号：US20130108833A1
公开(公告)日：2013-05-02
申请号：US13281749
申请日：2011-10-26
申请人： Markus Brink , Sebastian U. Engelmann , Nicholas C. M. Fuller , Michael A. Guillorn , Hiroyuki Miyazoe , Masahiro Nakamura
发明人： Markus Brink , Sebastian U. Engelmann , Nicholas C. M. Fuller , Michael A. Guillorn , Hiroyuki Miyazoe , Masahiro Nakamura
IPC分类号： B32B3/00 , C23F1/02
CPC分类号： G03F7/094 , G03F7/091 , G03F7/40 , H01L21/0332 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , Y10T428/24479
摘要： A stack of a hard mask layer, a soft mask layer, and a photoresist is formed on a substrate. The photoresist is patterned to include at least one opening. The pattern is transferred into the soft mask layer by an anisotropic etch, which forms a carbon-rich polymer that includes more carbon than fluorine. The carbon-rich polymer can be formed by employing a fluorohydrocarbon-containing plasma generated with fluorohydrocarbon molecules including more hydrogen than fluorine. The carbon-rich polymer coats the sidewalls of the soft mask layer, and prevents widening of the pattern transferred into the soft mask. The photoresist is subsequently removed, and the pattern in the soft mask layer is transferred into the hard mask layer. Sidewalls of the hard mask layer are coated with the carbon-rich polymer to prevent widening of the pattern transferred into the hard mask.
摘要翻译：在基板上形成硬掩模层，软掩模层和光致抗蚀剂的堆叠。图案化光致抗蚀剂以包括至少一个开口。该图案通过各向异性蚀刻转移到软掩模层中，其形成包含比氟更多的碳的富碳聚合物。富含碳的聚合物可以通过使用包含比氟更多的氢的氟代烃分子产生的含氟代烃等离子体形成。富含碳的聚合物涂覆软掩模层的侧壁，并且防止转移到软掩模中的图案的加宽。随后去除光致抗蚀剂，并将软掩模层中的图案转移到硬掩模层中。用富含碳的聚合物涂覆硬掩模层的侧壁以防止转移到硬掩模中的图案变宽。

115. 发明申请

US20090092799A1 MIXED LITHOGRAPHY WITH DUAL RESIST AND A SINGLE PATTERN TRANSFER 有权
标题翻译：具有双重电阻和单模式传输的混合光刻
公开(公告)号：US20090092799A1
公开(公告)日：2009-04-09
申请号：US11867428
申请日：2007-10-04
申请人： Nicholas C. Fuller , Michael A. Guillorn , Balasubramanian S. Pranatharthi Haran , Jyotica V. Patel
发明人： Nicholas C. Fuller , Michael A. Guillorn , Balasubramanian S. Pranatharthi Haran , Jyotica V. Patel
IPC分类号： G03C5/00 , G03G7/00
CPC分类号： G03F7/0035 , Y10S430/143 , Y10T428/24612 , Y10T428/24802
摘要： An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.
摘要翻译：在碳基材料层或下层上形成无机电子束敏感氧化物层。无机电子束敏感氧化层用电子束曝光并显影以形成图案化氧化物区域。将紫外线敏感的光致抗蚀剂层施加在图案化的氧化物区域和碳基材料层的暴露表面上，随后用紫外线照射并显影。图案化紫外光敏光致抗蚀剂和图案化氧化物区域的组合图案被转移到碳基材料层中，随后进入下层以形成沟槽。碳基材料层用作用于执行额外图案转移到下层中的鲁棒掩模，并且之后可以容易地剥离。随后去除图案化的紫外线敏感光刻胶，图案化氧化物区域和图案化的碳基材料层。

116. 发明授权

US09029834B2 Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectric 有权
标题翻译：使用牺牲图案化电介质形成用于纳米线的周围栅极的工艺
公开(公告)号：US09029834B2
公开(公告)日：2015-05-12
申请号：US12830514
申请日：2010-07-06
申请人： Sarunya Bangsaruntip , Guy Cohen , Michael A. Guillorn
发明人： Sarunya Bangsaruntip , Guy Cohen , Michael A. Guillorn
IPC分类号： H01L29/775 , H01L21/84 , B82Y10/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/786 , H01L21/285
CPC分类号： H01L29/0669 , B82Y10/00 , H01L21/28518 , H01L29/0649 , H01L29/0665 , H01L29/165 , H01L29/42392 , H01L29/66439 , H01L29/66545 , H01L29/66628 , H01L29/66772 , H01L29/775 , H01L29/7831 , H01L29/78645 , H01L29/78696
摘要： Techniques for defining a damascene gate in nanowire FET devices are provided. In one aspect, a method of fabricating a FET device is provided including the following steps. A SOI wafer is provided having a SOI layer over a BOX. Nanowires and pads are patterned in the SOI layer in a ladder-like configuration. The BOX is recessed under the nanowires. A patternable dielectric dummy gate(s) is formed over the recessed BOX and surrounding a portion of each of the nanowires. A CMP stop layer is deposited over the dummy gate(s) and the source and drain regions. A dielectric film is deposited over the CMP stop layer. The dielectric film is planarized using CMP to expose the dummy gate(s). The dummy gate(s) is at least partially removed so as to release the nanowires in a channel region. The dummy gate(s) is replaced with a gate conductor material.
摘要翻译：提供了在纳米线FET器件中限定镶嵌栅极的技术。一方面，提供一种制造FET器件的方法，包括以下步骤。提供了具有在BOX上的SOI层的SOI晶片。纳米线和焊盘以阶梯状构造在SOI层中图案化。 BOX凹入纳米线下方。在凹入的BOX上形成可图案的电介质伪栅极，并围绕每个纳米线的一部分。 CMP停止层沉积在虚拟栅极和源极和漏极区域上。在CMP停止层上沉积电介质膜。使用CMP对电介质膜进行平面化以暴露虚拟栅极。至少部分地去除虚拟栅极，以便在沟道区域中释放纳米线。虚拟栅极被栅极导体材料代替。

117. 发明授权

US08921030B2 Tone inversion of self-assembled self-aligned structures 有权
标题翻译：自组装自对准结构的音调反演
公开(公告)号：US08921030B2
公开(公告)日：2014-12-30
申请号：US13603869
申请日：2012-09-05
申请人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
发明人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
IPC分类号： G03F7/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , H01L21/3086
摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.
摘要翻译：在衬底上设置有机平面化层（OPL）和模板层的叠层。将模板层图案化以引起随后沉积的共聚物层的自组装。共聚物层被沉积并退火以形成相分离的共聚物嵌段。通过相对于第一相分离的聚合物除去第二相分离的聚合物形成原始的自组装图案。原始图案通过各向异性蚀刻转移到OPL中，并且去除第一相分离的聚合物和模板层。在包含原始图案的图案化OPL上沉积旋涂电介质（SOD）材料层，以形成填充图案化OPL内的沟槽的SOD部分。图案化的OPL被选择性地移除到包括互补图案的SOD部分。 SOD部分的互补图案通过各向异性蚀刻转移到下面的层中。

118. 发明申请

US20130026133A1 Method to Transfer Lithographic Patterns Into Inorganic Substrates 有权
标题翻译：将光刻图案转移到无机基板中的方法
公开(公告)号：US20130026133A1
公开(公告)日：2013-01-31
申请号：US13191985
申请日：2011-07-27
申请人： Sebastian Ulrich Engelmann , Martin Glodde , Michael A. Guillorn
发明人： Sebastian Ulrich Engelmann , Martin Glodde , Michael A. Guillorn
IPC分类号： C23F1/02
CPC分类号： H01L21/0337 , G03F7/0043 , G03F7/0757 , G03F7/094 , H01L21/0332
摘要： Techniques for minimizing or eliminating pattern deformation during lithographic pattern transfer to inorganic substrates are provided. In one aspect, a method for pattern transfer into an inorganic substrate is provided. The method includes the following steps. The inorganic substrate is provided. An organic planarizing layer is spin-coated on the inorganic substrate. The organic planarizing layer is baked. A hardmask is deposited onto the organic planarizing layer. A photoresist layer is spin-coated onto the hardmask. The photoresist layer is patterned. The hardmask is etched through the patterned photoresist layer using reactive ion etching (RIE). The organic planarizing layer is etched through the etched hardmask using RIE. A high-temperature anneal is performed in the absence of oxygen. The inorganic substrate is etched through the etched organic planarizing layer using reactive ion etching.
摘要翻译：提供了在将光刻图案转移到无机基底期间最小化或消除图案变形的技术。一方面，提供了图案转印到无机基板中的方法。该方法包括以下步骤。提供无机基材。将有机平面化层旋涂在无机基材上。烘烤有机平坦化层。硬掩模沉积在有机平坦化层上。将光致抗蚀剂层旋涂在硬掩模上。对光刻胶层进行图案化。使用反应离子蚀刻（RIE），通过图案化的光刻胶层蚀刻硬掩模。使用RIE蚀刻通过蚀刻的硬掩模的有机平坦化层。在不存在氧的情况下进行高温退火。使用反应离子蚀刻通过蚀刻的有机平坦化层蚀刻无机衬底。

119. 发明申请

US20120318649A1 Silicide Micromechanical Device and Methods to Fabricate Same 有权
标题翻译：硅化物微机械装置及其制造方法
公开(公告)号：US20120318649A1
公开(公告)日：2012-12-20
申请号：US13164126
申请日：2011-06-20
申请人： Michael A. Guillorn , Eric A. Joseph , Fei Liu , Zhen Zhang
发明人： Michael A. Guillorn , Eric A. Joseph , Fei Liu , Zhen Zhang
IPC分类号： H01H57/00 , H01L21/285
CPC分类号： B81C1/00666 , B81C1/00952 , H01H1/0094 , H01H2001/0078
摘要： A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a silicon layer disposed over an insulating layer that is disposed on a silicon substrate; releasing a portion of the silicon layer from the insulating layer so that it is at least partially suspended over a cavity in the insulating layer; depositing a metal (e.g., Pt) on at least one surface of at least the released portion of the silicon layer and, using a thermal process, fully siliciding at least the released portion of the silicon layer using the deposited metal. The method eliminates silicide-induced stress to the released Si member, as the entire Si member is silicided. Furthermore no conventional wet chemical etch is used after forming the fully silicided material thereby reducing a possibility of causing corrosion of the silicide and an increase in stiction.
摘要翻译：公开了一种制造诸如MEMS或NEMS开关的机电装置的方法。该方法包括提供设置在设置在硅衬底上的绝缘层上的硅层; 从所述绝缘层释放所述硅层的一部分，使得其至少部分地悬挂在所述绝缘层中的空腔上; 在至少所述硅层的释放部分的至少一个表面上沉积金属（例如Pt），并且使用热处理，使用沉积的金属至少完全硅化硅层的释放部分。当整个Si元件被硅化时，该方法消除了对释放的Si元件的硅化物引起的应力。此外，在形成完全硅化材料之后，也不使用常规的湿化学蚀刻，从而减少引起硅化物腐蚀和粘性增加的可能性。

120. 发明申请

US20120268985A1 RESONANCE NANOELECTROMECHANICAL SYSTEMS 有权
标题翻译：谐振纳米电子系统
公开(公告)号：US20120268985A1
公开(公告)日：2012-10-25
申请号：US13092247
申请日：2011-04-22
申请人： Leland Chang , Michael A. Guillorn , Dechao Guo , Fei Liu , Keith Kwong Hon Wong
发明人： Leland Chang , Michael A. Guillorn , Dechao Guo , Fei Liu , Keith Kwong Hon Wong
IPC分类号： G11C11/50 , H03B5/30
CPC分类号： H03H9/2457 , G11C11/404 , G11C23/00 , H03H2009/02314
摘要： Systems and methods for operating a nanometer-scale cantilever beam with a gate electrode. An example system includes a drive circuit coupled to the gate electrode where a drive signal from the circuit may cause the beam to oscillate at or near the beam's resonance frequency. The drive signal includes an AC component, and may include a DC component as well. An alternative example system includes a nanometer-scale cantilever beam, where the beam oscillates to contact a plurality of drain regions.
摘要翻译：用栅电极操作纳米级悬臂梁的系统和方法。示例性系统包括耦合到栅电极的驱动电路，其中来自电路的驱动信号可以使光束在光束的共振频率处或其附近振荡。驱动信号包括AC分量，并且还可以包括DC分量。替代示例系统包括纳米级悬臂梁，其中光束振荡以接触多个漏极区域。

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