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111. 发明授权

US07326523B2 Low refractive index polymers as underlayers for silicon-containing photoresists 有权
$Low refractive index polymers as underlayers for silicon-containing photoresists$
标题翻译：低折射率聚合物作为含硅光致抗蚀剂的底层
公开(公告)号：US07326523B2
公开(公告)日：2008-02-05
申请号：US11013971
申请日：2004-12-16
申请人： Wu-Song Huang , Sean D. Burns , Mahmoud Khojasteh
发明人： Wu-Song Huang , Sean D. Burns , Mahmoud Khojasteh
IPC分类号： G03F7/20 , G03F7/30 , G03F7/36 , G03C1/835 , G03C1/825
CPC分类号： G03F7/091 , G03F7/094 , Y10S438/952
摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.
摘要翻译：公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。该组合物适合用作多层光刻工艺中的平坦化底层，包括三层光刻工艺。

112. 发明申请

US20070248908A1 ADVANCED CHEMICALLY AMPLIFIED RESIST FOR SUB 30NM DENSE FEATURE RESOLUTION 有权
标题翻译：先进的化学放大电阻，用于30NM密度特征分辨率
公开(公告)号：US20070248908A1
公开(公告)日：2007-10-25
申请号：US11380098
申请日：2006-04-25
申请人： Wu-Song Huang , David Medeiros , Gregory Wallraff
发明人： Wu-Song Huang , David Medeiros , Gregory Wallraff
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/38
摘要： The present invention discloses a chemically amplified (CA) resist composition for printing features having a dimension of about 30 nm or less and a method of forming a material structure having a pattern containing features having a dimension of about 30 nm or less by using the inventive CA resist. The CA resist composition comprises (a) about 1 to about 50 weight % of a copolymer, (b) about 0.02 to about 25 weight % of a photoacid generator, (c) about 47 to about 99 weight % of a solvent, and (d) about 0.004 to about 25 weight % of a base additive. The copolymer comprises at least one hydrophilic monomer unit containing one or more polar functional groups and at least one hydrophobic monomer unit containing one or more aromatic groups. Some, but not all, of the one or more polar functional groups in the copolymer are protected with acid labile moieties having a low activation energy.
摘要翻译：本发明公开了一种用于印刷尺寸为约30nm或更小的特征的化学放大（CA）抗蚀剂组合物，以及通过使用本发明形成具有尺寸为约30nm或更小的特征的图案的材料结构的方法 CA抗拒。 CA抗蚀剂组合物包含（a）约1至约50重量％的共聚物，（b）约0.02至约25重量％的光酸产生剂，（c）约47至约99重量％的溶剂和（ d）约0.004至约25重量％的基础添加剂。共聚物包含至少一个含有一个或多个极性官能团的亲水性单体单元和至少一个含有一个或多个芳族基团的疏水性单体单元。共聚物中一个或多个极性官能团的一些但不是全部由具有低活化能的酸不稳定部分保护。

113. 发明授权

US07168224B2 Method of making a packaged radiation sensitive resist film-coated workpiece 有权
标题翻译：制造辐射敏感抗蚀剂膜涂层工件的方法
公开(公告)号：US07168224B2
公开(公告)日：2007-01-30
申请号：US10295595
申请日：2002-11-15
申请人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
发明人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
IPC分类号： B65B29/00
CPC分类号： G03F7/0012
摘要： The present invention includes a packaged coated workpiece. The packaged coated workpiece has: (1) a workpiece coated with a resist film sensitive to optical radiation, particulates or chemical contaminants; (2) an inner barrier sealed to enclose the coated workpiece and optionally a first getter agent, to produce a sealed first enclosure; and (3) an outer barrier sealed to enclose the sealed first enclosure and optionally a second getter agent, provided that the packaged coated workpiece has at least one getter agent, to produce a packaged coated workpiece suitable for storage for a period of at least one week without substantial loss of sensitivity, resolution or performance. The present invention also includes a process for preparing a packaged coated workpiece and a method of increasing the storage time of a coated workpiece to at least one week without substantial loss of sensitivity, resolution or performance.
摘要翻译：本发明包括一个包装的涂层工件。包装的涂层工件具有：（1）涂覆有对光辐射，微粒或化学污染物敏感的抗蚀剂膜的工件; （2）密封以封闭涂覆的工件和任选地第一吸气剂的内部阻隔件，以产生密封的第一外壳; 和（3）密封以封闭密封的第一外壳和任选的第二吸气剂的外屏障，只要所包封的涂覆的工件具有至少一个吸气剂，以产生适合于存储至少一个时间段的包装的涂覆的工件周没有明显的灵敏度，分辨率或性能的损失。本发明还包括用于制备包装的涂层工件的方法以及将涂覆的工件的存储时间增加至少一周而不会显着降低灵敏度，分辨率或性能的方法。

114. 发明申请

US20070009830A1 Underlayer compositons containing heterocyclic aromatic structures 有权
标题翻译：含有杂环芳烃结构的底层组合物
公开(公告)号：US20070009830A1
公开(公告)日：2007-01-11
申请号：US11175755
申请日：2005-07-06
申请人： Wu-Song Huang , Karen Temple , Pushkara Varanasi
发明人： Wu-Song Huang , Karen Temple , Pushkara Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/094 , G06F17/5072
摘要： A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.
摘要翻译：公开了一种适合用作多层光刻工艺中的平坦化底层的组合物。本发明的组合物包含含有杂环芳族部分的聚合物。另一方面，组合物还包含酸生成剂。在另一方面，组合物还包含交联剂。本发明的组合物提供具有突出的光学，机械和蚀刻选择性的平坦化底层。本发明还包括含有由本发明组合物制备的底层的光刻结构，以及制备这种光刻结构的方法，以及使用这种平版印刷结构在基底上图形下层材料层的方法。

115. 发明申请

US20060275694A1 High resolution silicon-containing resist 失效
标题翻译：高分辨率含硅抗蚀剂
公开(公告)号：US20060275694A1
公开(公告)日：2006-12-07
申请号：US11146871
申请日：2005-06-07
申请人： James Bucchignano , Wu-Song Huang , David Klaus , Lidija Sekaric , Raman Viswanathan
发明人： James Bucchignano , Wu-Song Huang , David Klaus , Lidija Sekaric , Raman Viswanathan
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.
摘要翻译：含有硅的非化学增强辐射敏感抗蚀剂组合物特别适用于光刻应用，尤其是电子束光刻。更具体地说，可以使用包含具有至少一个含硅部分的聚合物和在辐射暴露时可切割形成水溶性碱可溶部分的至少一个辐射敏感部分的辐射敏感性抗蚀剂组合物来形成低于50nm的特征，没有模糊。

116. 发明申请

US20060127800A1 High sensitivity resist compositions for electron-based lithography 有权
标题翻译：用于电子光刻的高灵敏度抗蚀剂组合物
公开(公告)号：US20060127800A1
公开(公告)日：2006-06-15
申请号：US10537259
申请日：2002-12-05
申请人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David Medeiros , Karen Petrillo , Robert Lang , Marie Angelopoulos
发明人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David Medeiros , Karen Petrillo , Robert Lang , Marie Angelopoulos
IPC分类号： G03C1/76
CPC分类号： G03F7/0045 , G03F7/0392
摘要： The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
摘要翻译：具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。抗蚀剂组合物也可用于其它平版印刷工艺。

117. 发明申请

US20060093959A1 Silicon containing TARC / barrier layer 有权
标题翻译：含硅的TARC /阻挡层
公开(公告)号：US20060093959A1
公开(公告)日：2006-05-04
申请号：US10980365
申请日：2004-11-03
申请人： Wu-Song Huang , Sean Burns , Pushkara Varanasi
发明人： Wu-Song Huang , Sean Burns , Pushkara Varanasi
IPC分类号： G03C1/76
CPC分类号： G03F7/091 , G03F7/0046 , G03F7/0752 , G03F7/2041
摘要： A top anti-reflective coating material (TARC) and barrier layer, and the use thereof in lithography processes, is disclosed. The TARC/barrier layer may be especially useful for immersion lithography using water as the imaging medium. The TARC/barrier layer comprises a polymer which comprises at least one silicon-containing moiety and at least one aqueous base soluble moiety. Suitable polymers include polymers having a silsesquioxane (ladder or network) structure, such as polymers containing monomers having the structure: where R1 comprises an aqueous base soluble moiety, and x is from about 1 to about 1.95, more preferably from about 1 to about 1.75.
摘要翻译：公开了一种顶部抗反射涂层材料（TARC）和阻挡层，以及其在光刻工艺中的用途。 TARC /阻挡层可能特别适用于使用水作为成像介质的浸没式光刻技术。 TARC /阻挡层包含含有至少一个含硅部分和至少一个水溶性碱可溶部分的聚合物。合适的聚合物包括具有倍半硅氧烷（梯形或网络）结构的聚合物，例如含有具有以下结构的单体的聚合物：其中R 1包含碱水溶性部分，x为约1至约1.95，更优选约1至约1.75。

118. 发明申请

US20060058489A1 Silicon-containing compositions for spin-on arc/hardmask materials 有权
标题翻译：用于旋转电弧/硬掩模材料的含硅组合物
公开(公告)号：US20060058489A1
公开(公告)日：2006-03-16
申请号：US11263430
申请日：2005-10-31
申请人： Marie Angelopoulos , Wu-Song Huang , Arpan Mahorowila , Wayne Moreau , Dirk Pfeiffer , Ratnam Sooriyekumaren
发明人： Marie Angelopoulos , Wu-Song Huang , Arpan Mahorowila , Wayne Moreau , Dirk Pfeiffer , Ratnam Sooriyekumaren
IPC分类号： C08G77/26
CPC分类号： G03F7/0754 , G03F7/0045 , G03F7/091 , Y10S430/106 , Y10S430/115
摘要： Antireflective compositions characterized by the presence of an Si-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
摘要翻译：特征在于存在具有侧生发色团部分的含Si聚合物的抗反射组合物是光刻工艺中有用的抗反射涂层/硬掩模组合物。这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。所述组合物在用于在基材上，尤其是金属或半导体层上配置下层材料层的光刻工艺中特别有用。

119. 发明申请

US20050112382A1 Molecular photoresists containing nonpolymeric silsesquioxanes 有权
标题翻译：含有非聚合倍半硅氧烷的分子光刻胶
公开(公告)号：US20050112382A1
公开(公告)日：2005-05-26
申请号：US10721302
申请日：2003-11-24
申请人： Robert Allen , Wu-Song Huang , Mahmoud Khojasteh , Qinghuang Lin , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong
发明人： Robert Allen , Wu-Song Huang , Mahmoud Khojasteh , Qinghuang Lin , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong
IPC分类号： B32B25/20 , C07F7/21 , G03F7/004 , G03F7/075
CPC分类号： C07F7/21 , G03F7/0045 , G03F7/0755 , Y10S430/106 , Y10S430/127 , Y10T428/31663
摘要： A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C, and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.
摘要翻译：提供了一种非聚合倍半硅氧烷，其中倍半硅氧烷的至少一个硅原子直接或间接地结合到酸可裂解的取代基R CL上。倍半硅氧烷的玻璃化转变温度T 大于50℃，R CL取代基可以在低于T T的温度下从倍半硅氧烷中裂解通常在T T以下至少5℃。倍半硅氧烷结构中的剩余硅原子可以与另外的酸可裂解基团，酸惰性极性基团R和P和/或酸惰性非极性基团R SUP>。非聚合倍半硅氧烷可以是任选具有一至三个开放顶点的多面体倍半硅氧烷，使得多面体看起来是“部分笼”结构，或两至四个这样的多面体倍半硅氧烷的大分子单体。还提供了含有新型非聚合倍半硅氧烷的光致抗蚀剂组合物，以及在制备图案化基材时使用该组合物的方法。

120. 发明授权

US06689540B2 Polymers and use thereof 有权
标题翻译：聚合物及其用途
公开(公告)号：US06689540B2
公开(公告)日：2004-02-10
申请号：US10040446
申请日：2002-01-09
申请人： Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee W. Kwong , David R. Medeiros
发明人： Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee W. Kwong , David R. Medeiros
IPC分类号： G03F740
CPC分类号： G03F7/0758 , C08F8/42 , C08F257/02 , C08L51/003 , C08L51/08 , G03F7/038 , G03F7/039 , Y10S430/143 , Y10S430/168 , C08L2666/02
摘要： Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译：包含具有硅，锗和/或锡的聚合物的组合物; 并且接枝到聚合物主链上的保护基可用作抗蚀剂并且对成像照射敏感，同时显示出增强的抗反应离子蚀刻的抗性。

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