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1. 发明授权

US06543617B2 Packaged radiation sensitive coated workpiece process for making and method of storing same 失效
标题翻译：包装辐射敏感涂层工艺制造及其存储方法
公开(公告)号：US06543617B2
公开(公告)日：2003-04-08
申请号：US09802471
申请日：2001-03-09
申请人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
发明人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
IPC分类号： B65D8500
CPC分类号： G03F7/0012
摘要： The present invention includes a packaged coated workpiece. The packaged coated workpiece has: (1) a workpiece coated with a resist film sensitive to optical radiation, particulates or chemical contaminants; (2) an inner barrier sealed to enclose the coated workpiece and optionally a first getter agent, to produce a sealed first enclosure; and (3) an outer barrier sealed to enclose the sealed first enclosure and optionally a second getter agent, provided that the packaged coated workpiece has at least one getter agent, to produce a packaged coated workpiece suitable for storage for a period of at least one week without substantial loss of sensitvity, resolution or performance. The present invention also includes a process for preparing a packaged coated workpiece and a method of increasing the storage time of a coated workpiece to at least one week without substantial loss of sensitivity, resolution or performance.
摘要翻译：本发明包括一个包装的涂层工件。包装的涂层工件具有：（1）涂覆有对光辐射，微粒或化学污染物敏感的抗蚀剂膜的工件; （2）密封以封闭涂覆的工件和任选地第一吸气剂的内部阻隔件，以产生密封的第一外壳; 和（3）密封以封闭密封的第一外壳和任选的第二吸气剂的外屏障，只要所包封的涂覆的工件具有至少一个吸气剂，以产生适合于存储至少一个时间段的包装的涂覆的工件周没有显着损失敏感性，分辨率或性能。本发明还包括用于制备包装的涂层工件的方法以及将涂覆的工件的存储时间增加至少一周而不会显着降低灵敏度，分辨率或性能的方法。

2. 发明授权

US07168224B2 Method of making a packaged radiation sensitive resist film-coated workpiece 有权
标题翻译：制造辐射敏感抗蚀剂膜涂层工件的方法
公开(公告)号：US07168224B2
公开(公告)日：2007-01-30
申请号：US10295595
申请日：2002-11-15
申请人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
发明人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
IPC分类号： B65B29/00
CPC分类号： G03F7/0012
摘要： The present invention includes a packaged coated workpiece. The packaged coated workpiece has: (1) a workpiece coated with a resist film sensitive to optical radiation, particulates or chemical contaminants; (2) an inner barrier sealed to enclose the coated workpiece and optionally a first getter agent, to produce a sealed first enclosure; and (3) an outer barrier sealed to enclose the sealed first enclosure and optionally a second getter agent, provided that the packaged coated workpiece has at least one getter agent, to produce a packaged coated workpiece suitable for storage for a period of at least one week without substantial loss of sensitivity, resolution or performance. The present invention also includes a process for preparing a packaged coated workpiece and a method of increasing the storage time of a coated workpiece to at least one week without substantial loss of sensitivity, resolution or performance.
摘要翻译：本发明包括一个包装的涂层工件。包装的涂层工件具有：（1）涂覆有对光辐射，微粒或化学污染物敏感的抗蚀剂膜的工件; （2）密封以封闭涂覆的工件和任选地第一吸气剂的内部阻隔件，以产生密封的第一外壳; 和（3）密封以封闭密封的第一外壳和任选的第二吸气剂的外屏障，只要所包封的涂覆的工件具有至少一个吸气剂，以产生适合于存储至少一个时间段的包装的涂覆的工件周没有明显的灵敏度，分辨率或性能的损失。本发明还包括用于制备包装的涂层工件的方法以及将涂覆的工件的存储时间增加至少一周而不会显着降低灵敏度，分辨率或性能的方法。

3. 发明授权

US07638266B2 Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer 失效
标题翻译：超薄聚合物光酸发生剂层和通过使用所述层制造器件和掩模中的至少一个的方法
公开(公告)号：US07638266B2
公开(公告)日：2009-12-29
申请号：US10916755
申请日：2004-08-12
申请人： Marie Angelopoulos , Gregory Breyta , Wu-Song Huang , Robert Neal Lang , Wenjie Li , David R. Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo
发明人： Marie Angelopoulos , Gregory Breyta , Wu-Song Huang , Robert Neal Lang , Wenjie Li , David R. Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo
IPC分类号： G03F1/00
CPC分类号： C08F220/14 , C08F220/38 , G03F7/0045 , G03F7/095
摘要： A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.
摘要翻译：用于制造器件和掩模中的至少一个的阻挡层包括形成在衬底和抗蚀剂层之间的聚合物光酸发生器。阻挡层可以用于例如形成抗蚀剂图像，并且在衬底上形成图案化材料特征。

4. 发明申请

US20120178027A1 MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS 有权
标题翻译：多次曝光光刻法
公开(公告)号：US20120178027A1
公开(公告)日：2012-07-12
申请号：US13418421
申请日：2012-03-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译：一个方法。该方法在衬底上形成光致抗蚀剂组合物的膜，并分别通过具有第一和第二图像图案的第一和第二掩模使膜的第一和第二区域暴露于辐射。光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。第二量的酸超过第一量的酸。第二剂辐射超过第一剂量的辐射。光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。碱的第一量超过第一量的酸。第二量的酸超过第二量的碱。

5. 发明申请

US20120214099A1 PHOTORESIST COMPOSITIONS 有权
标题翻译：光电组合物
公开(公告)号：US20120214099A1
公开(公告)日：2012-08-23
申请号：US13461960
申请日：2012-05-02
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/016 , G03F7/008 , G03F7/027
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.
摘要翻译：一个组成组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。光敏碱产生剂可以包括安息香氨基甲酸酯，O-氨基甲酰羟基胺，O-氨基甲酰肟，芳族磺酰胺，α-内酯，N-（2-羟乙基）酰胺，叠氮化物，酰胺，肟，季铵盐或胺酰胺。

6. 发明申请

US20090176174A1 MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS AND PHOTORESIST COMPOSTIONS 有权
标题翻译：多次曝光光刻方法和光电复合材料
公开(公告)号：US20090176174A1
公开(公告)日：2009-07-09
申请号：US11970761
申请日：2008-01-08
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method and a composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
摘要翻译：方法和组成。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于所述第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。包括用于在基板上暴露于光致抗蚀剂的膜的方法。

7. 发明授权

US08846296B2 Photoresist compositions 有权
标题翻译：光刻胶组合物
公开(公告)号：US08846296B2
公开(公告)日：2014-09-30
申请号：US13461960
申请日：2012-05-02
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/028
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A composition is provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.
摘要翻译：提供了组合物。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。光敏基底产生剂可以包括安息香氨基甲酸酯，O-氨基甲酰羟基胺，O-氨基甲酰肟，芳族磺酰胺，α-内酯，N-（2-亚乙烯基）酰胺，叠氮化物，酰胺，肟，季铵盐或胺酰胺。

8. 发明授权

US08568960B2 Multiple exposure photolithography methods 有权
标题翻译：多曝光光刻法
公开(公告)号：US08568960B2
公开(公告)日：2013-10-29
申请号：US13418421
申请日：2012-03-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/26 , G03F7/40
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译：一种在衬底上形成光致抗蚀剂组合物的膜并将膜的第一和第二区分别暴露于具有第一和第二图像图案的第一和第二掩模的辐射的方法。光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。第二量的酸超过第一量的酸。第二剂辐射超过第一剂量的辐射。光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。碱的第一量超过第一量的酸。第二量的酸超过第二量的碱。

9. 发明授权

US08053172B2 Photoresists and methods for optical proximity correction 有权
标题翻译：用于光学邻近校正的光致抗蚀剂和方法
公开(公告)号：US08053172B2
公开(公告)日：2011-11-08
申请号：US12035009
申请日：2008-02-21
申请人： Scott David Halle , Wu-Song Huang , Ranee Wai-Ling Kwong , Pushkara R. Varanasi
发明人： Scott David Halle , Wu-Song Huang , Ranee Wai-Ling Kwong , Pushkara R. Varanasi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/22 , G03F7/30 , G03F7/38
CPC分类号： G03F7/095 , G03F7/039 , G03F7/0397 , G03F7/091 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.
摘要翻译：光刻组合物和方法。在基板上形成第一光致抗蚀剂的第一层。第二层第二光致抗蚀剂直接形成在第一层上。第二光致抗蚀剂的第二聚合物包括吸收部分。第二层是图案成像和显影，导致去除碱溶性区域。仍然存在来自第二层的浮雕图案。浮雕图案和第一层暴露于第二剂量的辐射。浮雕图案中的聚合物吸收第二剂量的一部分。第二剂量的一部分通过浮雕图案的至少一个区域并暴露第一层的至少一个区域。去除第一层的浮雕图案和碱溶性区域。仍然存在第一层的浮雕图案。还包括第二光刻方法和光致抗蚀剂组合物。

10. 发明授权

US08236476B2 Multiple exposure photolithography methods and photoresist compositions 有权
标题翻译：多重曝光光刻方法和光致抗蚀剂组合物
公开(公告)号：US08236476B2
公开(公告)日：2012-08-07
申请号：US11970761
申请日：2008-01-08
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/028
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method and a composition are provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
摘要翻译：提供了一种方法和组合物。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于所述第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。包括用于在基板上暴露于光致抗蚀剂的膜的方法。

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